• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.210.1-210.1
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• 2013

ZnO는 태양전지의 투명전극 및 윈도우 물질로 그 동안 광범위하게 사용되어 왔다. 하지만 태양광의 효율 증가를 위하여서는 가시광 영역뿐만 아니라 자외선 및 적외선 영역을 이용할 필요가 있다. 또한 금속 산화물 반도체 나노 입자는 크기를 조절하여 흡수하는 태양광의 파장 영역을 조절할 수 있고 이를 이용하여 이종구조를 사지는 고효율의 태양전지를 구현할 수 있다. 본 연구에서는 3.4 eV의 에너지 밴드갭을 가지는 ZnO박막내에 밴드갭을 조절 할 수 있는 금속 산화물 나노입자를 삽입하여 광학적, 전기적 특성을 연구하였다. ZnO 박막을 증착하기 전 유리 및 사파이어 기판에 스퍼터를 사용하여 Pt금속전극을 형성한 이후, ZnO 박막을 $1{\times}10^{-10}$ Torr의 기본 진공도를 유지하는 초고진공 스퍼터를 사용하여 100 nm 두께로 증착 하였다. 금속 산화물 나노 입자를 제작 하기 위하여, ZnO 박막에 열증착 장비(thermal evaporator)를 사용하여 In 나노 입자를 10 nm 이하의 크기로 제작 하였다. 그 상부에 초고진공 스퍼터 와 열증착 장비를 사용하여 ZnO 박막 및 In 나노 입자를 순차적으로 증착하여 수백 nm 두께의 ZnO 박막을 제작한다. ZnO 박막 내부에 형성된 In 양자점은 ZnO 증착공정 중에 산화되어 $In_2O_3$ 의 산화물 나노 입자로 형성되며, 내부의 구조는 투과전자 현미경을 사용하여 확인 하였다. 제작된 금속 산화물 나노입자가 포함된 ZnO 박막의 광학적 특성을 photoluminescence, UV-Vis spectroscopy, ellipsometry를 통하여 확인 하였으며, solar simulator와 전류-전압 특정 장비를 사용하여 전기적 특성을 분석 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.235-235
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• 2010

본 연구에서는 태양전지의 활성영역에 삽입할 InAs 양자점에 AlxGax-1As 장벽층을 삽입하여 그 두께변화에 따른 광학적 특성 변화를 photoreflectance spectroscopy (PR)과 photoluminescence (PL)를 이용하여 연구하였다. 본 연구에 사용된 InAs/AlGaAs 양자점 구조는 GaAs (100) 기판 위에 GaAs buffer layer를 500 nm 성장 ($Ts=580^{\circ}C$) 후 기판온도 $470^{\circ}C$에서 InAs 양자점, GaAs cap 층과 AlxGax-1As 장벽층 순서로 5 층의 InAs/GaAs/AlxGax-1As 양자점 구조를 형성하였다. GaAs cap 층의 두께는 4 nm로 고정하고 AlGaAs 장벽층 두께를 0~6 nm 까지 변화시켰다. 각 양자점 층 사이에 AlxGax-1As 장벽층의 삽입 유무에 따라 PR 신호에서 Franz-Keldysh oscillation (FKO)의 주기 변화가 관측되었다. AlGaAs 두께가 증가 할수록 PL 신호의 세기가 증가함을 보였으며 PL 신호의 온도의존 특성이 변화됨을 관측할 수 있었다. AlGaAs 장벽층 대신 AlAs 장벽층을 삽입한 시료에서도 유사한 경향성을 관측하였으며, 이는 양자점에 구속된 운반자의 터널링 현상과 높은 장벽층에 의한 운반자의 구속 강도의 변화에 의한 것으로 사료된다. 특히 장벽층의 유무에 따른 FKO의 변화는 시료의 표면 전기장의 변화에 기인한 것으로 운반자의 구속효과뿐만 아니라 InAs 양자점 성장중 형성된 표면결함 밀도의 변화에 의한 것으로 추정하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.1
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• pp.86-92
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• 2019

Although perylene bisimide derivatives have advantages such as excellent thermal stability and high luminance efficiency, they have poor solubility characteristics in organic solvents. In this research, in order to improve the solubility characteristics, we prepared perylene bisimide derivatives (1C) and (2C) with swallow-tail substituted imide, which is known to lead to excellent solubility. The structures and properties of swallow-tail perylene bisimide (1C) and (2C) were analyzed by $^1H-NMR$, FT-IR, UV/Vis spectroscopy, and thermogravimetric analysis (TGA). The maximum absorption wavelengths of (1C) and (2C) in the UV/Vis spectrum were 558 nm and 556 nm, respectively, and the maximum emission wavelengths were 602 nm and 600 nm, respectively. In the TGA, (1C) demonstrated good thermal stability with less than 5 wt% weight loss up to $242^{\circ}C$. In the solubility test, (1C) and (2C) exhibited solubilities of more than 5 wt% in chloroform, ethyl acetate, and dimethylformamide, but not in methanol. When the compounds (1C) and (2C) were mixed with PMMA (polymethyl methacrylate), thin films showed peaks at 679 nm and 677 nm, respectively, in the photoluminescence spectra. (1C) was found to be a possible candidate as red organic phosphor for hybrid LEDs.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.359-364
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• 2008

We have investigated optical and structural properties of $Al_{0.3}Ga_{0.7}N$/GaN and $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ heterostructures (HSs) grown by metal-organic chemical vapor deposition, by means of Hall measurement, high-resolution X-ray diffraction, and temperature- and excitation power-dependent photoluminescence (PL) spectroscopy. A strong GaN band edge emission and its longitudinal optical phonon replicas were observed for all the samples. At 10 K, a 2DEG-related PL peak located at ${\sim}\;3.445\;eV$ was observed for $Al_{0.3}Ga_{0.7}N$/GaN HS, while two 2DEG peaks at ${\sim}\;3.42$ and ${\sim}\;3.445\;eV$ were observed for $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ HS due to the additional $Al_{0.15}Ga_{0.85}N$ layers. Moreover, the emission intensity of the 2DEG peak was higher in $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ HS than in $Al_{0.3}Ga_{0.7}N$/GaN HS probably due to an effective confinement of the photo-excited holes by the additional $Al_{0.15}Ga_{0.85}N$ layers. The 2DEG-related emission intensity decreased with increasing temperature and disappeared at temperatures above 150 K. To investigate the origin of the new 2DEG peaks, the energy-band structure for multiple AlGaN/GaN HSs were simulated and compared with the experimental data. As a result, the observed high- and low-energy peaks of 2DEG can be attributed to the spatially-separated 2DEG emissions formed at different AlGaN/GaN heterointerfaces.

• Korean Chemical Engineering Research
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• v.51 no.2
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• pp.195-202
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• 2013

$TiO_2$ powders were prepared from titanium (IV) sulfate ($Ti(SO_4)_2$) solution using ammonia solution at low reaction temperature ($80{\sim}100^{\circ}C$) and atmospheric pressure by hydrothermal precipitation method without calcination. The effect of reaction conditions, such as reaction temperature, initial concentration of titanium (IV) sulfate ($Ti(SO_4)_2$) solution, pH of mixture solution and the physical properties of the prepared $TiO_2$, such as crystallite structure, crystallite size were investigated. The photocatalytic activity of prepared $TiO_2$ was tested by the photolysis of brilliant blue FCF (BB-FCF) under the UV and the analysis of UV-VIS diffuse reflectance spectroscopy (DRS). The physical properties of prepared $TiO_2$ were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence spectrometer (PL), particle size distribution measurements. The crystallite size and crystallinity of prepared $TiO_2$ increased with increasing titanium (IV) sulfate ($Ti(SO_4)_2$) concentration, but photocatalytic activity decreased. The crystallite size decreased with increasing pH of mixture solution, but photocatalytic activity increased. The crystallinity and photocatalytic activity increased with increasing reaction temperature. The results showed that anatase type $TiO_2$ could be prepared by hydrothermal precipitation method using titanium (IV) sulfate ($Ti(SO_4)_2$) solution and ammonia solution at low reaction temperature and atmospheric pressure without calcination.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.1
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• pp.9-13
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• 2018

In this work, we investigated the variation of optical characteristics with the thickness of bulk GaN grown by hydride vapor phase epitaxy(HVPE) to evaluate applicability as GaN substrates in fabrication of high-brightness optical devices and high-power devices. We fabricated 2-inch GaN substrates by using HVPE method of various thickness (0.4, 0.9, 1.5 mm) and characterized the optical property with the variation of defect density and the residual stress using chemical wet etching, Raman spectroscopy and photoluminescence. As a result, we confirmed the correlation of optical properties with GaN crystal thickness and applicability of high performance optical devices via fabrication of homoepitaxial substrate.

• Clean Technology
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• v.17 no.1
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• pp.78-82
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• 2011

For effectively photochemical hydrogen production, P (negative semiconductor) and B (positive semiconductor) ions (0.1, 0.2, 0.5, and 1.0 mol%) incorporated $TiO_2$ (P- and B-$TiO_2$) nanometer sized particles were prepared using a solvothermal method as a photocatalyst. The characteristics of the synthesized P- and B-$TiO_2$ photocatalysts were analyzed by X-ray Diffraction (XRD), Transmission electron microscopy (TEM), W-visible spectroscopy (UV-Vis), and Photoluminescence spectra (PL). The evolution of $H_2$ from methanol/water (1:1) photo-splitting over B-$TiO_2$ photocatalysts was enhanced compared to those over pure $TiO_2$ and P-$TiO_2$ photocatalysts; 0.42 mL of $H_2$ gas was evolved after 10 h when 0.5 g of a 1.0 mol% B-$TiO_2$ catalyst was used.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.4
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• pp.157-161
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• 2006

InGaN layers on GaN templated sapphire (0001) substrates were grown by mixed-source hydride vapor phase epitaxy (HVPE) method. In order to get InGaN layers, Ga-mixed In metal and $NH_3$ gas were used as group III and group V source materials, respectively. The InGaN material was compounded from chemical reaction between $NH_3$ and indium-gallium chloride farmed by HCl flowed over metallic In mixed with Ga. The grown layers were confirmed to be InGaN ternary crystal alloys by X-ray photoelectron spectroscopy (XPS). In concentration of the InGaN layers grown by selective area growth (SAG) method was investigated by the photoluminescence (PL) and cathodoluminescence (CL) measurements. Indium concentration was estimated to be in the range 3 %. Moreover, as a new attempt in obtaining InAlGaN layers, the growth of the thick InAlGaN layers was performed by putting small amount of Ga and Al into the In source. We found the new results that the metallic In mixed with Ga (and Al) as a group III source material could be used in the growth process of the In(Al)GaN layers by the mixed-source HVPE method.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.324-325
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• 2014

Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.443-450
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• 1993

Self-alignment gatc Schottky contact structure on Si- implanted GaAs was formed by plasma enhanced chemical vapor dcposirion. Tungsten nitride thin films (ahclut 1600$\AA$) \vcre dopositcd on GaAs at $350^{\circ}C$ in order to fahricarc GaAs 1Cs and ttwn rapidly annealed at $750^{\circ}C$ to $900^{\circ}C$. Thermal charac tcristics of PECVD)-$W_{67}N_{43}$/GaAs structure were investigated by X-ray diffraction, photolumintesccnce. and optical deep level transient specrroscopy. Results revealed that $W_{67}N_{33}$ gate was more thermally sta ble with GaAs substrate than W gate and Si atoms implanted In $W_{67}N_{33}$/GaAs structure became morr active than those In W/GaAs after annealing. I-V characteristics of $W_{67}N_{33}$/GaAs diod c exhibired a nearly ideal diode behavior. The termal stability of $W_{67}N_{33}$/GaAs diode was better than that of W/GaAs diode with the post annealing at temperatures from 800 to $900^{\circ}C$ for 20s without As overpressure.