• Applied Science and Convergence Technology
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• 제23권3호
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• pp.113-127
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• 2014

For more than five decades, silicon has dominated the semiconductor industry that supports memory devices, ICs, photovoltaic devices, etc. Photoluminescence (PL) is an attractive silicon characterization technique because it is contactless and provides information on bulk impurities, defects, surface states, optical properties, and doping concentration. It can provide high resolution spectra, generally with the sample at low temperature and room-temperature spectra. The photoluminescence properties of silicon at low temperature are reviewed and discussed in this study. In this paper, silicon bulk PL spectra are shown in multiple peak positions at low temperature. They correspond with various impurities such as In, Al, and Be, phonon interactions, for example, acoustical phonons and optical phonons, different exciton binding energies for boron and phosphorus, dislocation related PL emission peak lines, and oxygen related thermal donor PL emissions.

• 통합자연과학논문집
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• 제3권3호
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• pp.148-152
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• 2010

Photoluminescence properties and surface morphologies of porous silicon etched with various applied current densities at fixed etching times. FE-SEM image of porous silicon surface indicated that the porous silicon prepared at currents below 200 mA exhibited very bright red photoluminescence properties. As the applied current densities increased, the photoluminescence efficiencies of porous silicon prepared at applied current densities above 300 mA decreased, and displayed the cracked surface on porous silicon. This cracked surface start to collapsed to give cracked domains.

• 통합자연과학논문집
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• 제3권2호
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• pp.107-111
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• 2010

Silicon-containing ${\pi}$-conjugated compounds, especially silacyclopentadienes (siloles), have emerged as a new class of electroactive materials with good electron transport properties in OLEDs. 9,9'-spiro-9-silabifluorene compound as well as its starting material 2,2'-dibromobiphenyl have been synthesized with higher yields. Spirosilabifluorene is expected to be an efficient host material for the blue-light emitting diodes. 9,9'-spiro-9-silabifluorene, 1,1-dichloro-1-silafluorene, and 1,1-dimethyl-1-silafluorene were characterized by $^1H$-NMR, UV/Vis and photoluminescence spectroscopy.

• Current Optics and Photonics
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• 제3권2호
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• pp.164-171
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• 2019

Photoluminescence (PL) properties of GaN-based light-emitting diodes (LEDs) were analyzed to study the effects of carrier leakage on the luminescence properties at room temperature. The electrical leakage and PL properties were compared for LEDs showing leakages at forward bias and an LED with an intentional leakage path formed by connecting a parallel resistance of various values. The leakages at the forward bias, which could be observed from the current-voltage characteristics, resulted in an increase in the excitation laser power density for the maximum PL efficiency (ratio of PL intensity to excitation power) as well as a reduction in the PL intensity. The effect of carrier leakages on PL properties was similar to the change in PL properties owing to a reduction of the photovoltage by a reverse current since the direction of the carrier movement under photoexcitation is identical to that of the reverse current. Valid relations between PL properties and electrical properties were observed as the PL properties deteriorated with an increase in the carrier leakage. The results imply that the PL properties of LED chips can be an indicator of the electrical properties of LEDs.

• 한국분말재료학회지
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• 제26권6호
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• pp.463-470
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• 2019

Fe₃O₄/SiO₂/YVO₄:Eu³⁺ multifunctional nanoparticles are successfully synthesized by facile stepwise sol-gel processes. The multifunctional nanoparticles show a spherical shape with narrow size distribution (approximately 40 nm) and the phosphor shells are well crystallized. The Eu³⁺ shows strong photoluminescence (red emission at 619 nm, absorbance at 290 nm) due to an effective energy transfer from the vanadate group to Eu. Core-shell structured multifunctional nanoparticles have superparamagnetic properties at 300 K. Furthermore, the core-shell nanoparticles have a quick response time for the external magnetic field. These results suggest that the photoluminescence and magnetic properties could be easily tuned by either varying the number of coating processes or changing the phosphor elements. The nanoparticles may have potential applications for appropriate fields such as laser systems, optical amplifiers, security systems, and drug delivery materials.

• Transactions on Electrical and Electronic Materials
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• 제11권1호
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• pp.1-10
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• 2010

This is an overview paper reporting our most recent work on processing and microstructure of nano-structured oxides and their photoluminescence and photo-catalysis properties. Zinc oxide and related transition metal oxides such as vanadium pentoxide and titanium dioxide were produced by a combination of magnetron sputtering, hydrothermal growth and atmosphere controlled heat treatment. Special morphology and microstructure were created including nanorods arrays, core-brushes, nano-lollipops and multilayers with very large surface area. These structures showed special properties such as much enhanced photoluminescence and chemical reactivity. The photo-catalytic properties have also been promoted significantly. It is believed that two factors contributed to the high reactivity: the large surface area and the interaction between different oxides. The transition metal oxides with different band gaps have much enhanced photoluminescence under laser stimulation. Use of these complex oxide structures as electrodes can also improve the energy conversion efficiency of solar cells. The mixed oxide complex may provide a promising way to high-efficiency photo emitting materials and photo-catalysts.

• 한국전기전자재료학회논문지
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• 제31권7호
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• pp.443-449
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• 2018

We investigated the temperature-dependent photoluminescence spectroscopy of colloidal InZnP/ZnSe/ZnS (core/shell/shell) quantum dots with varying ZnSe and ZnS shell thickness in the 278~363 K temperature range. Temperature-dependent photoluminescence of the InZnP-based quantum dot samples reveal red-shifting of the photoluminescence peaks, thermal quenching of photoluminescence, and broadening of bandwidth with increasing temperature. The degree of band-gap shifting and line broadening as a function of temperature is affected little by shell composition and thickness. However, the thermal quenching of the photoluminescence is strongly dependent on the shell components. The irreversible photoluminescence quenching behavior is dominant for thin-shell-deposited InZnP quantum dots, whereas thick-shelled InZnP quantum dots exhibit superior thermal stability of the photoluminescence intensity.

• 한국전기전자재료학회논문지
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• 제25권3호
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• pp.193-197
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• 2012

$Gd_{1-x}VO_4:{Eu_x}^{3+}$ red phosphors were synthesized with changing the concentration of $Eu^{3+}$ ion by using a solid-state reaction method. The crystal structure, surface morphology, and photoluminescence and photoluminescence excitation properties of the red phosphors were measured by using X-ray diffractometer, field emission-scanning electron microscopy, and florescence spectrometer, respectively. The XRD results showed that the main peak of all the phosphor powders occurs at (200) plane. As for the photoluminescence properties, the maximum excitation spectrum occurred at 306 nm due to the charge transfer band from ${VO_4}^{3-}$ to $Eu^{3+}$ ions and the maximum emission spectrum was the red luminescence peaking at 619 nm when the concentration of $Eu^{3+}$ ion was 0.10 mol.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.659-663
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• 2011

[ $Y_{1-x}BO_3:Tb_x^{3+}$ ]ceramic phosphors were synthesized with changing the concentration of $Tb^{3+}$ at a sintering temperature of $1,100^{\circ}C$ and a reduction temperature of $950^{\circ}C$ by using a solid-state reaction method. The crystal structure, surface morphology, and photoluminescence properties of the phosphors were investigated as a function of $Tb^{3+}$ ion concentration by using XRD (x-ray diffractometer), scanning electron microscopy, and photoluminescence spectrophotometry, respectively. The XRD results showed that the main peak of the phosphor powders occurs at (101) plane. As for the photoluminescence properties, the excitation spectra showed the broad band centered at 306 nm and the emission intensity of the spectra peaked at 543 nm indicated a significant decrease as the concentration of $Tb^{3+}$ ion is increased.

• 한국재료학회지
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• 제22권3호
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• pp.140-144
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• 2012

Compared with bulk material, quantum dots have received increasing attention due to their fascinating physical properties, including optical and electronic properties, which are due to the quantum confinement effect. Especially, Luminescent CdSe quantum dots have been highly investigated due to their tunable size-dependent photoluminescence across the visible spectrum. They are of great interest for technical applications such as light-emitting devices, lasers, and fluorescent labels. In particular, quantum dot-based light-emitting diodes emit high luminance. Quantum dots have very high luminescence properties because of their absorption coefficient and quantum efficiency, which are higher than those of typical dyes. CdSe quantum dots were synthesized as a function of the synthesis time and synthesis temperature. The photoluminescence properties were found strongly to depend on the reaction time and the temperature due to the core size changing. It was also observed that the photoluminescence intensity is decreased with the synthesis time due to the temperature dependence of the band gap. The wavelength of the synthesized quantum dots was about 550-700 nm and the intensity of the photoluminescence increased about 22~70%. After the CdSe quantum dots were synthesized, the particles were found to have grown until reaching a saturated concentration as time increased. Red shift occurred because of the particle growth. The microstructure and phase developments were measured by transmission electron microscopy (TEM) and X-ray diffractometry (XRD), respectively.