Journal of Integrative Natural Science (통합자연과학논문집)

The Basic Science Institute Chosun University (조선대학교 기초과학연구원)
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Photoluminescence of Porous Silicon According to Various Etching Times and Various Applied Current Densities

식각시간 및 식각전류에 따른 다공성 실리콘의 발광 특성에 대한 조사

  • Han, Jungmin (Biorefinery Research Center, Korea Research Institute of Chemical Technology)
  • Received : 2010.09.02
  • Accepted : 2010.09.27
  • Published : 2010.09.30
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Abstract

Photoluminescence properties and surface morphologies of porous silicon etched with various applied current densities at fixed etching times. FE-SEM image of porous silicon surface indicated that the porous silicon prepared at currents below 200 mA exhibited very bright red photoluminescence properties. As the applied current densities increased, the photoluminescence efficiencies of porous silicon prepared at applied current densities above 300 mA decreased, and displayed the cracked surface on porous silicon. This cracked surface start to collapsed to give cracked domains.

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References

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