• Journal of Surface Science and Engineering
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• v.48 no.3
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• pp.82-86
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• 2015

$Dy^{3+}$- and $Eu^{3+}$-codoped $CaMoO_4$ Phosphors were synthesized by using the solid-state reaction method. The crystal structure, morphology, and optical properties of the resulting phosphor particles were investigated by using the X-ray diffraction, field-emission scanning electron microscopy, and photoluminescence spectroscopy. XRD patterns exhibited that all the synthesized phosphors showed a tetragonal system with a main (112) diffraction peak, irrespective of the content of $Eu^{3+}$ ions. As the content of $Eu^{3+}$ ions increased, the grains showed a tendency to agglomerate. The excitation spectra of the synthesized powders were composed of one strong broad band centered at 305 nm in the range of 220 - 350 nm and several weak peaks in the range of 350 - 500 nm resulting from the 4f transitions of activator ions. Upon ultraviolet excitation at 305 nm, the yellow emission line due to the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of $Dy^{3+}$ ions and the main red emission spectrum resulting from the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ ions were observed. With the increase of the content of $Eu^{3+}$, the intensity of the yellow emission band gradually decreased while that of the red emission increased. These results indicated that the emission intensities of yellow and red emissions could be modulated by changing the content of the $Dy^{3+}$ and $Eu^{3+}$ ions incorporated into the host crystal.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.176-181
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• 2011

$Y_{1-x}BO_3:Ce_x^{3+}$ ceramic phosphors were synthesized with changing the concentration of $Ce^{3+}$ ion by using a solid-state reaction method. The crystal structure, surface morphology, and optical properties of the blue phosphors were investigated by using X-ray diffractometer (XRD), scanning electron microscopy, and photoluminescence and photoluminescence excitation spectrophotometry, respectively. The XRD results showed that the main peak of the phosphor powders occurs at (401)와 ($31\bar{2}$) planes. As for the optical properties, the excitation spectrum occurred at 243 nm and the value of blue emission intensity peaking at 469 nm reached the maximum when the concentration of $Ce^{3+}$ ion was 0.10 mol.

• Korean Journal of Materials Research
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• v.20 no.7
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• pp.364-369
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• 2010

A $SrAl_2O_4:Eu^{2+},Dy^{3+}$ phosphor powder with stuffed tridymite structure was synthesized by glycine-nitrate combustion method. The luminescence, formation process and microstructure of the phosphor powder were investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence spectroscopy (PL). The XRD patterns show that the as-synthesized $SrAl_2O_4:Eu^{2+},Dy^{3+}$ phosphor was an amorphous phase. However, a crystalline $SrAl_2O_4 $ phase was formed by calcining at $1200^{\circ}C$ for 4h. From the SEM analysis, also, it was found that the as-synthesized $SrAl_2O_4:Eu^{2+},Dy^{3+}$ phosphor was in irregular porous particles of about 50 ${\mu}m$, while the calcined phosphor was aggregated in spherical particles with radius of about 0.5 ${\mu}m$. The emission spectrum of as-synthesized $SrAl_2O_4:Eu^{2+},Dy^{3+}$ phosphor did not appear, due to the amorphous phase. However, the emission spectrum of the calcined phosphor was observed at 520 nm (2.384eV); it showed green emission peaking, in the range of 450~650 nm. The excitation spectrum of the $SrAl_2O_4:Eu^{2+},Dy^{3+}$ phosphor exhibits a maximum peak intensity at 360 nm (3.44eV) in the range of 250~480 nm. After the removal of the pulse Xe-lamp excitation (360 nm), also, the decay time for the emission spectrum was very slow, which shows the excellent longphosphorescent property of the phosphor, although the decay time decreased exponentially.

• Applied Science and Convergence Technology
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• v.24 no.4
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• pp.111-116
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• 2015

The graphene oxide (GO) and graphene oxide quantum dots (GOQDs), which have gained research interest as new types of light-emitting materials, were synthesized by the modified Hummers method for oxidation of graphite flake and graphite nanoparticle. The optical properties of GO and GOQDs have been compared by mean of photoluminescence (PL), PL excitation (PLE), UV-vis absorbance, and time-resolved PL. The GO have an absorption peak at 229 nm and shoulder part at 310 nm, whereas the GOQDs show broad absorption with a gradual change up without any absorption peaks. The PL emission of GOQDs and GO showed the green color at 520 nm and the red color at 690 nm, respectively. The red emission of GO showed faster PL decay time than the green emission of GOQDs. In particular, the temporal PL profile of the GO showed redshift from 560 nm to 660 nm after the pump event.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.212-215
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• 2016

In this paper, cerium doped lutetium pyrosilicate (LPS) powders with cerium content (0.05 and 0.07 mol%) were prepared by sol-gel process. The formation of lutetium pyrosilicate (LPS) phase was confirmed by XRD analysis for the powders heated at $1,200^{\circ}C$; in these powders, a single phase of $Lu_2Si_2O_7$ (LPS) was observed. Cerium doped lutetium pyrosilicate (LPS) powder was agglomerated and constituted of small spherical particles with diameters of about 300 nm. The photoluminescence spectra of the $Lu_2Si_2O_7:Ce^{3+}$ powders showed the characteristic of excitation and there was an emission spectrum for $Ce^{3+}$ in the host of $Lu_2Si_2O_7$. The emission spectrum shows a broad band in the range of 350-525 nm; the broad wavelength on the right side of the spectra should be ascribed to the same 5d-4f transitions of $Ce^{3+}$, as in the case of cerium doped $Lu_2Si_2O_7$ single crystals.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.200-203
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• 2011

In this research, nitrogen (N)-doped zinc oxide (ZnO) thin films have been grown on a sapphire substrate by dielectric barrier discharge (DBD) in pulsed laser deposition (PLD). DBD has been used as an effective way for massive in-situ generation of N-plasma under conventional PLD process conditions. Low-temperature photoluminescence spectra of N-doped ZnO thin films provided near-band-edge emission after a thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound excitation peak ($A^{\circ}X$) that indicated acceptor doping of ZnO with N. The acceptor binding energy of the N acceptor was estimated to be approximately 145 MeV based on the results of temperature-dependent photoluminescence (PL) measurements.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.46-49
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• 2011

Bi co-doped ZnS:Mn,Bi yellow phosphors for white light emitting diodes were prepared by the conventional solidstate reaction method. The optical and structural properties of ZnS:Mn,Bi phosphors were investigated by x-ray diffraction, scanning electro microscopy and photoluminescence. ZnS:Mn,Bi phosphors showed XRD patterns of hexagonal structure. The photoluminescence of ZnS:Mn,Bi phosphors showed spectra extending from 480 to 700 nm, peaking at 580 nm. The photoluminescence of 580 nm in the ZnS:Mn,Bi phosphors was associated with the 4T1 ${\rightarrow}$ 6A1 transition of the Mn2+ ions. The highest photoluminescent intensity of the phosphors under 405 nm and 450 nm excitation was obtained at Bi concentration of 7mol%. The optimum mixing conditions with epoxy and yellow phosphor for white light emitting diodes were observed in a ratio of epoxy:yellow phosphor of 1:3.5. The CIE chromaticity of the white LED at the 1:3.5 ratio was X = 0.3454 and Y = 0.2449.

• Korean Journal of Materials Research
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• v.27 no.5
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• pp.270-275
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• 2017

Inorganic phosphors based on $ZrO_2:Eu^{3+}$ nanoparticles were synthesized by a salt-assisted ultrasonic spray pyrolysis process that is suitable for industrially-scalable production because of its continuous nature and because it does not require expensive precursors, long reaction time, physical templates or surfactant. This facile process results in the formation of tiny, highly crystalline spherical nanoparticles without hard agglomeration. The powder X-ray diffraction patterns of the $ZrO_2:Eu^{3+}$ (1-20 mol%) confirmed the body centered tetragonal phase. The average particle size, estimated from the Scherrer equation and from TEM images, was found to be approximately 11 nm. Photoluminescence (PL) emission was recorded under 266 nm excitation and shows an intense emission peak at 607 nm, along with other emission peaks at 580, 592 and 632 nm which are indicated in red.

• Analytical Science and Technology
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• v.27 no.6
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• pp.314-320
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• 2014

$La_{2-x}(MoO_4)_3:Er^{3+}/Yb^{3+}$ particles with doping concentrations of $Er^{3+}$ and $Yb^{3+}$ ($x=Er^{3+}+Yb^{3+}$, $Er^{3+}$=0.05, 0.1, 0.2 and $Yb^{3+}$ = 0.2, 0.45) were successfully prepared by the microwave-modified sol-gel method, and the upconversion photoluminescence properties were investigated. Well-crystallized particles, formed after heat-treatment at $900^{\circ}C$ for 16 h, showed a fine and homogeneous morphology with particle sizes of $2-5{\mu}m$. Under excitation at 980 nm, $La_{1.7}(MoO_4)_3:Er_{0.1}Yb_{0.2}$ and $La_{1.5}(MoO_4)_3:Er_{0.05}Yb_{0.45}$ particles exhibited a strong 525 nm emission band, a weak 550 nm emission band in the green region, and a very weak 655 nm emission band in the red region. The Raman spectra of the doped particles indicated the presence of strong peaks at higher frequencies of 752, 846, 922, 1358 and $1435cm^{-1}$ and lower frequency of $314cm^{-1}$ induced by the disorder of the $[MoO_4]^{2-}$ groups with the incorporation of the $Er^{3+}$ and $Yb^{3+}$ elements into the crystal lattice or by a new phase formation.

• Journal of Integrative Natural Science
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• v.3 no.2
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• pp.117-121
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• 2010

Silicon quantum dots base on photoluminescent porous silicon were prepared from an electrochemical etching of n-type silicon wafer (boron-dopped<100> orientation, resistivity of 1~10 ${\Omega}-cm$) and used as a alcohol sensor. Silicon quantum dots displayed an emission band at the wavelength of 675 nm with an excitation wavelength of 480 nm. Photoluminescence of silicon quantum dots was quenched in the presence of alcohol vapors such as methanol, ethanol, and isopropanol. Quenching efficiencies of 21.5, 32.5, and 45.8% were obtained for isopropanol, ethanol, and methanol, respectively. A linear relationship was obtained between quenching efficiencies and vapor pressure of analytes used. Quenching photoluminescence was recovered upon introducing of fresh air after the detection of alcohol. This provides easy fabrication of alcohol sensor based on porous silicon.