• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.535-538
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• 2000

We have investigated the photoinduced anisotropy in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin films, non-doped and photodoped by Ag and Cu. The films were exposed by the linearly polarized He-Ne laser light( $\lambda$=632.8nm). The Ag and Cu photodoping resulted in reducing the time of saturation photoinduced linearly dichroism. Also photoinduced linearly dichroism was increased up to maximum 184% by Ag photodoping and 138% by Cu photodoping, respectively. As the result of this study, the linearly dichroism can be interesting for different applications of photoinduced anisotropy. In addition, it will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.533-537
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• 2000

It was known that chalcogenide glasses have the superior property of the photoinduced anisotropy(PA). In this study we observed the phenomenon of Ag polarized-photodoping in chalcogenide As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ and the double-layer of Ag doped As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ thin film using the irradiation with the polarized He-Ne laser light. The Ag polarized-photodoping results in reducing the time of saturation anisotorpy and increasing the sensitivity of linearly anisotropy intensity up to maximum 220% The Ag polrized-photodoping shows improvement of the photoinduced anisotropy property in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.in film.ilm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1500-1502
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• 2000

In this study, we have investigated the photoinduced anisotropy (PA) phenomena by the assisted. electric field effect on $As_{40}Ge_{10}Se_{15}S_{35}$ thin films. Investigation of photoinduced anisotropy on the assisted electric field effect was carried out using a He-Ne laser beams (inducing and probing beams) illuminating the same area of the thin film. To investigate the effect of electric field, various bias voltages applied. The result is shown the photoinduced anisotropy dependence on electric field. Also. we obtained the property of photoinduced anisotropy in the electric field effects by various voltages.

• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.144-150
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• 2003

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism using the irradiation with Polarized He-Ne laser light in the Ag/As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ multi-layer. Multilayer structures were formed by alternating metal(Ag) and chalcogenide(As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$) thin film. The Ag Polarized photodoping result in reducing the time of saturation anisotropy and increasing the sensitivity of linearly anisotropy intensity As the results, the Ag polarized photodoping will be have a capability of new method that suggests more improvement of photoinduced anisotropy property in the thin films of chalcogenide.ogenide.ide.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.362-365
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• 2001

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer. Mutilayer structures formed by alternating metal(Ag) a chalcogenide$(As_{40}Ge_{10}Se_{15}S_{35})$. Such multilayer structures have a greater sensitivity to illumination am larger dichroism in comparison the conventional double layer structure. Also new phenomena are discovered. These results will be show a capability of new method that suggested more improvement of photoinduced anisotropy property.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.362-365
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• 2001

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ multi-layer. Mutilayer structures farmed by alternating metal(Ag) a chalcogenide(As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/). Such multilayer structures have a greater sensitivity to illumination and larger dichroism in comparison the conventional double layer structure. Also new phenomena are discovered. These results will be show a capability of new method that suggested more improvement of photoinduced anisotropy property.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.139-144
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• 2001

In this study, we have investigated the photoinduced birefringence of Ag plarized-photodoping in double-layer of Ag doped chalcognide thin films and dependence of polarization states in chalcogenide thin films. Also, we have investigated the polarization dependence of photoinduced birefringence and the anisotropy of absorption in an amorphous As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ chalcogenide thin films using two 632.8nm He-Ne lasers, which have a smaller energy than the optical energy gap (E$\sub$OP/) of the film, i.e., an exposure of sub-bandgap light (hν$\sub$op/). The photoinduced phenomena of Ag polarized-photodooping increasing the linear dichroism(d), about 84% and birefringence(Δn), about 23%. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin films.

• 한국광학회:학술대회논문집
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• 한국광학회 1990년도 제5회 파동 및 레이저 학술발표회 5th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.162-166
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• 1990

Photoinduced anisotropy (PIA) in amorphous As2S3 (a-As2S3 ) thin film, deposited by vacuum evaporation, is investigated. PIA is induced by linearly polarized Ar+ laser beam (λ=514.5nm) and probed by weak Ar+ laser (λ=514.5nm) and He-Ne laser (λ=632.8nm) beam through the crossed analyzer. Keeping pump beam intensity constantly, rotation of pump beam polarization direction induces reorientation phenomina of anisotropic axis. Introducing directional factor into simplified 3-level system, which is used to analyze photodarkening phenomina, an analytical expression of PIA is derived. Temporal behavior of PIAand its reorientation phenomina are investigated andcompared with theory. In the experiment pump beam intensity is 100mW/$\textrm{cm}^2$ and thickness of a-As2S3 thin film is 3${\mu}{\textrm}{m}$. In those condition, time constant of photoinduced anisotropy obtained by method of least square curve fitting is 4.0$\times$10-2sec-1. The time constant of PIA we obtained is larger than that of photodarkening, 2.8$\times$10-2sec-1.

• 한국전기전자재료학회논문지
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• 제14권1호
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• pp.58-63
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• 2001

We have investigated the photoinduced birefrinence by the electric field effects in chalcogenide thin films. The electric field effects have investigated the various applied bias voltages(forward and reverse) in chalcogenide thin films. A pumping (inducing) and a probing bean were using a linearly polarized He-Ne laser light (633nm) and semiconductor laser light (780nm), respectively. The result was shown that the birefringence had a higher value in DC +2V than the others, Also, we obtained the birefringence in the electric field effects by various voltages. In addition, we have discussed the anisotropy property of chalcogenide thin films by the electric field effects.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.419-421
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• 2000

In this study, we observed the photoinduced birefringence of Ag polarized-photodoping in chalcogenide thin film and the double-layer of Ag doped chalcogenide thin film using the irradiation with the polarized He-Ne laser light. The photoinduced birefringence of Ag polarized-photodoping results in increasing the sensitivity of linearly anisotropy intensity and birefringence(${\Delta}n$). The Ag polarized-photodoping shows improvement of the photoinduced anisotropy property, in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.