Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2000.11c
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- Pages.419-421
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- 2000
The photoinduced birefringence of chalcogenide thin film by the Ag Polarized-Photodoping
Ag 편광-광도핑에 의한 칼코게나이드 박막의 광유기 복굴절
- Jang, Sun-Joo (Dept. of Electronic Materials Eng. Kwangwoon University) ;
- Park, Hwa-Jong (Dept. of Electronic Materials Eng. Kwangwoon University) ;
- Yeo, Cheol-Ho (Dept. of Electronic Materials Eng. Kwangwoon University) ;
- Lee, Young-Jong (Dept. of Electronic YeoJoo college) ;
- Chung, Hong-Bay (Dept. of Electronic Materials Eng. Kwangwoon University)
- 장선주 (광운대학교 공과대학 전자재료공학과) ;
- 박종화 (광운대학교 공과대학 전자재료공학과) ;
- 여철호 (광운대학교 공과대학 전자재료공학과) ;
- 이영종 (여주대학 전자과) ;
- 정홍배 (광운대학교 공과대학 전자재료공학과)
- Published : 2000.11.25
Abstract
In this study, we observed the photoinduced birefringence of Ag polarized-photodoping in chalcogenide thin film and the double-layer of Ag doped chalcogenide thin film using the irradiation with the polarized He-Ne laser light. The photoinduced birefringence of Ag polarized-photodoping results in increasing the sensitivity of linearly anisotropy intensity and birefringence(
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