• 제목/요약/키워드: Photoelectric device

검색결과 63건 처리시간 0.027초

Characterization of Wavelength Effect on Photovoltaic Property of Poly-Si Solar Cell Using Photoconductive Atomic Force Microscopy (PC-AFM)

  • Heo, Jinhee
    • Transactions on Electrical and Electronic Materials
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    • 제14권3호
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    • pp.160-163
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    • 2013
  • We investigated the effect of light intensity and wavelength of a solar cell device by using photoconductive atomic force microscopy (PC-AFM). The $POCl_3$ diffusion doping process was used to produce a p-n junction solar cell device based on a Poly-Si wafer and the electrical properties of prepared solar cells were measured using a solar cell simulator system. The measured open circuit voltage ($V_{oc}$) is 0.59 V and the short circuit current ($I_{sc}$) is 48.5 mA. Also, the values of the fill factors and efficiencies of the devices are 0.7% and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, was used for direct measurements of photoelectric characteristics in local instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics were observed. Results obtained through PC-AFM were compared with the electric/optical characteristics data obtained through a solar simulator. The voltage ($V_{PC-AFM}$) at which the current was 0 A in the I-V characteristic curves increased sharply up to 1.8 $mW/cm^2$, peaking and slowly falling as light intensity increased. Here, $V_{PC-AFM}$ at 1.8 $mW/cm^2$ was 0.29 V, which corresponds to 59% of the average $V_{oc}$ value, as measured with the solar simulator. Also, while light wavelength was increased from 300 nm to 1,100 nm, the external quantum efficiency (EQE) and results from PC-AFM showed similar trends at the macro scale, but returned different results in several sections, indicating the need for detailed analysis and improvement in the future.

Photoconductive Atomic Force Microscopy를 이용한 빛의 세기 및 파장의 변화에 따른 폴리실리콘 태양전지의 광전특성 분석 (Characterization of Light Effect on Photovoltaic Property of Poly-Si Solar Cell by Using Photoconductive Atomic Force Microscopy)

  • 허진희
    • 한국재료학회지
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    • 제28권11호
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    • pp.680-684
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    • 2018
  • We investigate the effect of light intensity and wavelength of a solar cell device using photoconductive atomic force microscopy(PC-AFM). A $POCl_3$ diffusion doping process is used to produce a p-n junction solar cell device based on a polySi wafer, and the electrical properties of prepared solar cells are measured using a solar cell simulator system. The measured open circuit voltage($V_{oc}$) is 0.59 V and the short circuit current($I_{sc}$) is 48.5 mA. Moreover, the values of the fill factors and efficiencies of the devices are 0.7 and approximately 13.6 %, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, is used for direct measurements of photoelectric characteristics in limited areas instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics are observed. Results obtained through PC-AFM are compared with the electric/optical characteristics data obtained through a solar simulator. The voltage($V_{PC-AFM}$) at which the current is 0 A in the I-V characteristic curves increases sharply up to $18W/m^2$, peaking and slowly falling as light intensity increases. Here, $V_{PC-AFM}$ at $18W/m^2$ is 0.29 V, which corresponds to 59 % of the average $V_{oc}$ value, as measured with the solar simulator. Furthermore, while the light wavelength increases from 300 nm to 1,100 nm, the external quantum efficiency(EQE) and results from PC-AFM show similar trends at the macro scale but reveal different results in several sections, indicating the need for detailed analysis and improvement in the future.

순환전류법을 이용해 ZnO 금속산화물과 Graphene을 동시에 제막한 전자수송층을 갖는 유기태양전지의 특성 (Characteristics of Organic Solar Cell having an Electron Transport Layer co-Deposited with ZnO Metal Oxide and Graphene using the Cyclic Voltammetry Method)

  • 안준섭;한은미
    • 마이크로전자및패키징학회지
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    • 제29권1호
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    • pp.71-75
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    • 2022
  • Graphene oxide를 ZnCl2:NaCl 전해질과 함께 교반한 후 순환 전압전류법에 의해 전기화학적으로 제막하여 유기태양전지용 전자수송층 제막과정을 단순화하고 이를 갖는 유기태양전지를 제작하였다. 소자의 구조는 FTO/ZnO:graphene 전자수송층/P3HT:PCBM 광활성층/PEDOT:PSS 정공수송층/Ag이다. ETL의 형태 및 화학적 특성은 주사전자현미경(scanning electron microscopy, SEM), X선 광전자 분광법(X-ray photoelectron spectroscopy, XPS), 라만 분광법으로 확인하였다. XPS 측정결과 ZnO 금속산화물 및 탄소결합이 동시에 확인되었고, 라만 분광법에서 ZnO와 graphene 피크를 확인하였다. 제작한 태양전지의 전기적 특성을 솔라시뮬레이터로 측정하였고 0.05 V/s의 속도로 2회 제막한 ETL 소자에서 1.94%의 가장 높은 광전변환효율을 나타내었다.

Nanoscale NiO for transparent solid state devices

  • Patel, Malkeshkumar;Kim, Joondong;Park, Hyeong-Ho
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.243.2-243.2
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    • 2015
  • We report a high-performing nanoscale NiO thin film grown by thermal oxidation of sputtered Ni film. The structural, physical, optical and electrical properties of nanoscale NiO were comprehensively investigated. A quality transparent heterojunction (NiO/ZnO) was formed by large-area applicable sputtering deposition method that has an extremely low saturation current of 0.1 nA. Considerable large rectification ratio of more than 1000 was obtained for transparent heterojunction device. Mott-Schottky analyses were applied to develop the interface of NiO and ZnO by establishing energy diagrams. Nanoscale NiO has the accepter carrier concentration of the order of 1018 cm-3. Nanoscale NiO Schottky junction device properties were comprehensively studied using room temperature impedance spectroscopy.

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광전음극 소자용 GaAs/AlGaAs 구조의 LPE 성장 (Growth of GaAs/AlGaAs structure for photoelectric cathode)

  • 배숭근;전인준;김경화
    • 한국결정성장학회지
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    • 제27권6호
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    • pp.282-288
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    • 2017
  • 본 논문에서는 광전 음극 이미지 센서로 사용될 수 있는 광소자용 재료로 III-V 족 화합물 반도체인 GaAs/AlGaAs 다층 구조를 LPE(Liquid Phase Epitaxy) 방법에 의해 성장하였다. n형 GaAs 기판 위에 수십 nm의 GaAs 완충층을 형성 한 후 Zn가 도핑된 p-AlGaAs 에칭 정지 층(etching stop layer)과 Zn가 도핑된 p-GaAs 층 그리고 Zn가 도핑된 p-AlGaAs 층을 성장하였다. 성장된 시료의 특성을 조사하기 위하여 주사전자현미경(SEM)과 이차이온질량분석기(SIMS) 그리고 홀(Hall) 측정 장치 등을 이용하여 GaAs/AlGaAs 다층 구조를 분석하였다. 그 결과 $1.25mm{\times}25mm$의 성장 기판에서 거울면(mirror surface)을 가지는 p-AlGaAs/p-GaAs/p-AlGaAs 다층 구조를 확인할 수 있었으며, Al 조성은 80 %로 측정 되었다. 또한 p-GaAs층의 캐리어 농도는 $8{\times}10^{18}/cm^2$ 범위까지 조절할 수 있음을 확인하였다. 이 결과로부터 LPE 방법에 의해 성장된 p-AlGaAs/p-GaAs/AlGaAs 다층 구조는 광전 음극 이미지 센서의 소자로서 이용될 수 있을 것으로 기대한다.

CMOS 이미지센서 SPICE 회로 해석을 위한 포토다이오드 및 픽셀 모델링 (Photo Diode and Pixel Modeling for CMOS Image Sensor SPICE Circuit Analysis)

  • 김지만;정진우;권보민;박주홍;박용수;이제원;송한정
    • 전자공학회논문지 IE
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    • 제46권4호
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    • pp.8-15
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    • 2009
  • 본 논문은 CMOS 이미지센서 SPICE 회로 해석을 위한 포토다이오드 및 픽셀 모델링을 나타내었다. 소자 시뮬레이터인 메디치(Medici)를 이용하여 입사광의 세기에 따른 광전류 특성을 확보하고 SPICE 시뮬레이션에서 활용하기 위한 SPICE용 포토 다이오드 모델을 개발하였다. 그리고 그 결과를 검증하기 위하여 포토다이오드와 NMOS로 구성된 시험용 회로구조에 대한 메디치(Medici)의 mixed mode 시뮬레이션 결과와 SPICE 시뮬레이션 결과를 비교하였다.

손목형 생체신호수집 장치에 대한 연구 (A Study on Wrist Band Type Vital Sign Acquisition Device)

  • 김희훈;김경호
    • 전기학회논문지
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    • 제65권5호
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    • pp.857-861
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    • 2016
  • In this study, we proposed a new method that can be measure ECG (Electrocardiography) and PPG (Photoplethysmography) in realtime on the site of the wrist for check the state of health in daily life. For convenience measurement of ECG the lead I method was used on the wrist, and omit the reference junction ECG I was measured in the right hand and the left hand of the potential difference. Then the measured electrocardiogram was amplified by the differential amplifier and the signals were passed HPF, LPF, and BPF filters. For removing the PPG's noise from the Motion artifact and temperature, we apply the reflective photoelectric volume pulse wave measurement method using green LED as a light source. The circuits was designed to be able to check the waveform using higher active amplification method at weak signals. For the validation of our device, the measured signals were compared with E2-KIT on same time. The results shows that the error does not exceed the maximum one, most of the data is confirmed to be issued Peak inspection of the same number.

분진색상에 따른 광전식연기감지기 챔버의 응답특성에 관한 연구 (A Study on Response Characteristics of Photoelectric Type Smoke Detector Chamber Due to Dust Color)

  • 이호성;김시국
    • 한국화재소방학회논문지
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    • 제31권5호
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    • pp.44-52
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    • 2017
  • 본 논문은 분진 색상에 따른 광전식연기감지기 챔버의 응답특성에 관한 연구이다. 국내 자동화재탐지설비 및 경보설비의 화재안전기준의 개정으로 연기감지기의 실내 적용이 의무화되었으나, 아직까지 국내에서는 실내 환경에서 발생되는 실내먼지 및 환경조건 등에 의해 발생될 수 있는 부작동 및 비화재보에 대한 연구가 미비한 편이다. 이에 본 연구에서는 실내먼지 중 가장 많이 발생될 것으로 판단되는 다양한 색상의 섬유분진에 따른 연기감지기의 실내적응성을 연구하기 위해 국내에 가장 많이 보급화 되어 있는 격자형의 연기챔버를 가진 광전식 연기감지기를 실험대상으로 하고, 갈색, 백색, 회색, 흑색 4종류의 섬유분진을 실험분진으로 하여 분진시험 및 감도시험을 진행하였다. 또한, 연기챔버의 수광부 전압을 측정하여 챔버 내부의 산란현상을 관찰하였다. 실험결과 4종류의 분진 모두 오염도 A에서는 분진시험 및 감도시험에서 모두 적합한 것으로 나타났다. 반면, 오염도 B와 C에서는 갈색, 백색, 회색분진의 경우 작동시험 및 부작동시험에서 분진오염에 의한 오작동이 나타났고, 흑색분진의 경우 작동시험에서 부작동이 발생되는 것으로 확인되었다. 연기챔버의 수광부 전압측정 결과는 갈색 및 백색분진의 경우 오염도가 증가할수록 전압이 증가하였고, 회색 및 흑색분진의 경우 전압이 감소하는 것을 확인하였다.

분위기 산소압변화에 따른 ZnO박막의 UV발광 특성분석 (UV emission characterization of ZnO thin films depending on the variation of oxygen pressure)

  • 배상혁;이상렬
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1523-1525
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    • 1999
  • ZnO is a wide-bandgap II-VI semiconductor and has a variety of potential application. ZnO exhibits good piezoelectric, photoelectric and optic properties, and is good for a electroluminescence device. ZnO films have been deposited at (0001) shappire by PLD technique. Chamber was evacuated by turbomolecular pump to a base pressure of $1{\times}10^{-6}$ Torr Nd:YAG pulsed laser was operated at ${\lambda}=355nm$. The ZnO films were deposited at oxygen pressures from base to 500 mTorr. The substrate temperatures was increased from $200^{\circ}C$ to $700^{\circ}C$. At aleady works, UV emission and green-yellow PL was observed. In this work, ZnO films showed UV, violet, green and yellow emissions. UV emission was enhanced by increasing partial oxygen pressure. We investigated relationship between partial oxygen pressure and UV emission.

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Local Photoswitching Effects of Cytochrome c/Viologen/GFP Hetero-Thin Film

  • 유창준;최정우;박세정;남윤석;오병근;이원홍
    • 한국생물공학회:학술대회논문집
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    • 한국생물공학회 2001년도 추계학술발표대회
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    • pp.823-826
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    • 2001
  • In the initial process of photosynthesis, a biological electron transfer system, photoelectric conversion occurs and then long-range electron transfer takes place very efficiently in one direction through the biomolecules. The metal/insulator/metal structured device consisting of GFP, viologen, cytochrome c hetero-thin film was presented based on the biomimesis. GFP, viologen, and cytochrome c was used as an electron sensitizer, a mediator, and an electron acceptor. Cytochrome c molecules and viologen molecules were deposited by Langmuir-Blodgett (LB) technique, and GFP molecules were adsorbed by self-assembly method (SAM). Surface morphology of hetero-thin film was analyzed by scanning tunneling microscopy (STM). Local photoswitching effects of a proposed photodiode were verified by current-voltage measurements using hybrid STM/I-V measurement system.

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