• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.160-163
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• 2013

We investigated the effect of light intensity and wavelength of a solar cell device by using photoconductive atomic force microscopy (PC-AFM). The $POCl_3$ diffusion doping process was used to produce a p-n junction solar cell device based on a Poly-Si wafer and the electrical properties of prepared solar cells were measured using a solar cell simulator system. The measured open circuit voltage ($V_{oc}$) is 0.59 V and the short circuit current ($I_{sc}$) is 48.5 mA. Also, the values of the fill factors and efficiencies of the devices are 0.7% and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, was used for direct measurements of photoelectric characteristics in local instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics were observed. Results obtained through PC-AFM were compared with the electric/optical characteristics data obtained through a solar simulator. The voltage ($V_{PC-AFM}$) at which the current was 0 A in the I-V characteristic curves increased sharply up to 1.8 $mW/cm^2$, peaking and slowly falling as light intensity increased. Here, $V_{PC-AFM}$ at 1.8 $mW/cm^2$ was 0.29 V, which corresponds to 59% of the average $V_{oc}$ value, as measured with the solar simulator. Also, while light wavelength was increased from 300 nm to 1,100 nm, the external quantum efficiency (EQE) and results from PC-AFM showed similar trends at the macro scale, but returned different results in several sections, indicating the need for detailed analysis and improvement in the future.

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.680-684
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• 2018

We investigate the effect of light intensity and wavelength of a solar cell device using photoconductive atomic force microscopy(PC-AFM). A $POCl_3$ diffusion doping process is used to produce a p-n junction solar cell device based on a polySi wafer, and the electrical properties of prepared solar cells are measured using a solar cell simulator system. The measured open circuit voltage($V_{oc}$) is 0.59 V and the short circuit current($I_{sc}$) is 48.5 mA. Moreover, the values of the fill factors and efficiencies of the devices are 0.7 and approximately 13.6 %, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, is used for direct measurements of photoelectric characteristics in limited areas instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics are observed. Results obtained through PC-AFM are compared with the electric/optical characteristics data obtained through a solar simulator. The voltage($V_{PC-AFM}$) at which the current is 0 A in the I-V characteristic curves increases sharply up to $18W/m^2$, peaking and slowly falling as light intensity increases. Here, $V_{PC-AFM}$ at $18W/m^2$ is 0.29 V, which corresponds to 59 % of the average $V_{oc}$ value, as measured with the solar simulator. Furthermore, while the light wavelength increases from 300 nm to 1,100 nm, the external quantum efficiency(EQE) and results from PC-AFM show similar trends at the macro scale but reveal different results in several sections, indicating the need for detailed analysis and improvement in the future.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.1
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• pp.71-75
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• 2022

Graphene oxide was stirred with a ZnCl₂:NaCl electrolyte and electrochemically coated by cyclic voltammetry to simplify the electron transpfer layer film forming process for organic solar cells and to fabricate an organic solar cell having it. The device structure is FTO/ZnO:graphene/P3HT:PCBM/PEDOT:PSS/Ag. Morphology and chemical properties of ETL were confirmed by scanning electron microscopy(SEM), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. As a result of XPS measurement, ZnO metal oxide and carbon bonding were simultaneously confirmed, and ZnO and graphene peaks were confirmed by Raman spectroscopy. The electrical characteristics of the manufactured solar cell were specified with a solar simulator, and the ETL device coated twice at a rate of 0.05 V/s showed the highest photoelectric conversion efficiency of 1.94%.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.243.2-243.2
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• 2015

We report a high-performing nanoscale NiO thin film grown by thermal oxidation of sputtered Ni film. The structural, physical, optical and electrical properties of nanoscale NiO were comprehensively investigated. A quality transparent heterojunction (NiO/ZnO) was formed by large-area applicable sputtering deposition method that has an extremely low saturation current of 0.1 nA. Considerable large rectification ratio of more than 1000 was obtained for transparent heterojunction device. Mott-Schottky analyses were applied to develop the interface of NiO and ZnO by establishing energy diagrams. Nanoscale NiO has the accepter carrier concentration of the order of 1018 cm-3. Nanoscale NiO Schottky junction device properties were comprehensively studied using room temperature impedance spectroscopy.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.6
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• pp.282-288
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• 2017

In this paper, GaAs/AlGaAs multi-layer structure was grown by liquid phase epitaxy with graphite sliding boat, which can be used as a device structure of a photocathode image sensor. The multi-layer structure was grown on an n-type GaAs substrate in the sequence as follows: GaAs buffer layer, Zn-doped p-type AlGaAs layer as etching stop layer, Zn-doped p-type GaAs layer, and Zn-doped p-type AlGaAs layer. The Characteristics of GaAs/AlGaAs structures were analyzed by using scanning electron microscope (SEM), secondary ion mass spectrometer (SIMS) and hall measurement. The SEM images shows that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure was grown with a mirror-like surface on a whole ($1.25mm{\times}25mm$) substrate. The Al composition in the AlGaAs layer was approximately 80 %. Also, it was confirmed that the free carrier concentration in the p-GaAs layer can be adjusted to the range of $8{\times}10^{18}/cm^2$ by hall measurement. In the result, it is expected that the p-AlGaAs/p-GaAs/p-AlGaAs multi-layer structure grown by the LPE can be used as a device structure of a photoelectric cathode image sensor.

• 전자공학회논문지 IE
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• v.46 no.4
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• pp.8-15
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• 2009

In this paper, we are indicated CMOS Image sensor circuit SPICE analysis for the Photo Diode and pixel Modeling. We get a characteristic of the photoelectric current using a device simulator Medici and develop the Photodiode model for applying a SPICE simulation. For verifying the result, We compared the result of SPICE simulation with the result of mixed mode simulation about the testing circuit structure consisted photodiode and NMOS.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.5
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• pp.857-861
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• 2016

In this study, we proposed a new method that can be measure ECG (Electrocardiography) and PPG (Photoplethysmography) in realtime on the site of the wrist for check the state of health in daily life. For convenience measurement of ECG the lead I method was used on the wrist, and omit the reference junction ECG I was measured in the right hand and the left hand of the potential difference. Then the measured electrocardiogram was amplified by the differential amplifier and the signals were passed HPF, LPF, and BPF filters. For removing the PPG's noise from the Motion artifact and temperature, we apply the reflective photoelectric volume pulse wave measurement method using green LED as a light source. The circuits was designed to be able to check the waveform using higher active amplification method at weak signals. For the validation of our device, the measured signals were compared with E2-KIT on same time. The results shows that the error does not exceed the maximum one, most of the data is confirmed to be issued Peak inspection of the same number.

• Fire Science and Engineering
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• v.31 no.5
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• pp.44-52
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• 2017

This paper is based on a study of the response characteristics of photoelectric type smoke detector chambers according to dust color. Due to an amendment to the Fire Safety Codes to automatic fire alarm systems and visual alarm device, the installation of indoor smoke detectors has become mandatory, but in Korea there is still insufficient research on the non-operation or false alarms that could arise in indoor environments by indoor dust and other environmental conditions etc. In light of this, for this study, research was conducted on the indoor adaptability of smoke detector under various colors of fiber dust that were judged to occur most frequently in among the common indoor dust, photoelectric smoke detector with the lattice-type smoke detection chamber that the smoke detector which is most popular in the country was used, and four colors of fiber dust (brown, white, gray and black) were used the test dusts for carrying out dust and sensitivity testing. Also, the voltage of the photocell part of the smoke chamber was measured, and the scattering phenomenon in the chamber was observed. The result of the testing showed that all four dust types were suitable for dust and sensitivity testing under conditions of pollution A. Yet, there were occasions, at pollution B or C, where the brown, white and gray dust would cause fail alarm during operation testing. And black dust was confirmed to cause non-operation during operation testing. In the case of brown and white dust, the voltage measurement result of the photocell part of the smoke chamber confirmed that the voltage increases as the pollution level increases, and in the case of gray and black dust, the voltage decreases.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1523-1525
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• 1999

ZnO is a wide-bandgap II-VI semiconductor and has a variety of potential application. ZnO exhibits good piezoelectric, photoelectric and optic properties, and is good for a electroluminescence device. ZnO films have been deposited at (0001) shappire by PLD technique. Chamber was evacuated by turbomolecular pump to a base pressure of $1{\times}10^{-6}$ Torr Nd:YAG pulsed laser was operated at ${\lambda}=355nm$. The ZnO films were deposited at oxygen pressures from base to 500 mTorr. The substrate temperatures was increased from $200^{\circ}C$ to $700^{\circ}C$. At aleady works, UV emission and green-yellow PL was observed. In this work, ZnO films showed UV, violet, green and yellow emissions. UV emission was enhanced by increasing partial oxygen pressure. We investigated relationship between partial oxygen pressure and UV emission.

• 한국생물공학회:학술대회논문집
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• 2001.11a
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• pp.823-826
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• 2001

In the initial process of photosynthesis, a biological electron transfer system, photoelectric conversion occurs and then long-range electron transfer takes place very efficiently in one direction through the biomolecules. The metal/insulator/metal structured device consisting of GFP, viologen, cytochrome c hetero-thin film was presented based on the biomimesis. GFP, viologen, and cytochrome c was used as an electron sensitizer, a mediator, and an electron acceptor. Cytochrome c molecules and viologen molecules were deposited by Langmuir-Blodgett (LB) technique, and GFP molecules were adsorbed by self-assembly method (SAM). Surface morphology of hetero-thin film was analyzed by scanning tunneling microscopy (STM). Local photoswitching effects of a proposed photodiode were verified by current-voltage measurements using hybrid STM/I-V measurement system.