• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.3 s.333
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• pp.17-24
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• 2005

We fabricated PIN-Photodiodes with a single mode fiber for analog communications and analyzed characteristics of the devices. The fabricated PIN-Photodiode shows a bandwidth of 1.5 GHz, a dark current of 20 p4 a capacitance of 0.48 pF, and the responsivity of 0.9 V/W, a second order distortion of -72 dBc. In this paper, we developed a new optical Packaging technology that is aligning in real-time monitoring of both responsivity and IM2 characteristics. As a result responsivity has been improved by 0.03 V/W, and also U has been improved by $3\~5\;dBc$. On the other hand, failure ratio has been reduced by $3.5\%$.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.247-250
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• 2001

We have fabricated and evaluated a new Si pin photodiode for red light detection with the web patterned $p^{+}$ -shallow diffused region in the light absorbing area. From the measurements of electro-optical characteristics under the bias of -5V, the junction capacitance of 4pF and the dark current of 235pA were obtained. When the 1.6㎼ optical power with peak wavelength of 670nm was incident on the device, the optical signal current of 0.48$\mu\textrm{A}$ and the responsivity of 0.30A/W were obtained. The fabricated device showed the improved sensitivity compared to the conventional circular type device and the maximum spectral response in a spectrum of 670~700nm. The web-patterned Si photodiode can be expected to have the good discrimination characteristics between digital signals in the application of red light optics.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.509-512
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• 2004

This paper proposed a new solid State Relay(SSR) structure that can replace the conventional SSR as a power IC. The photodiode arrays, the main part of this structure, were designed and integrated in the same power It chip with the output parts, LDMOSFET and BJT, on a SOI substrate. The fabrication of this input part shared the same output LDMOSFET fabrication processs, except the additional deposition of Silicon nitride($Si_3N_4$) for the photo-detection part. According to LED illumination intensites and photo detecting areas, we could obtain voltage of 0.49V ${\~}$0.52V and current of 5.5uA ${\~}$ 108uA respectively from the fabricated unit photodiode. The maximum value of the voltage and the current we could obtain from the photodiode array were 3.58V and 24.4uA respectively, and the voltage was enough to operate the output LDMOSFET

• Korean Journal of Optics and Photonics
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• v.8 no.2
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• pp.165-168
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• 1997

We have constructed a scanning confocal microscope using a 780 nm semiconductor laser, an actuator of a compact disk player and a quad-detector. This device detects heights and characteristics of a surface. The laser focus was located at the surface of a sample by using the error signal obtained by a quad-dector, and the current supplied to the actuator for lens was displayed as a height. The materials of a surface were classified according to reflected total intensities and was displayed by different color in a monitor. The device has very samll dimensions of 30 mm$\times$20 mm$\times$20 mm and scan field is 1.6 mm$\times$1.6mm. We obtained two images, one using only reflected light and the other using an error signal from a quad-detector and compared these two images.

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.135-138
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• 1991

A planar type PIN photodiode has been fabricated and discussed. We used OMVPE systems to grow the structure of u-InP/u-InP/n-InP. P-n junction was formed by Zn-diffusion method at 50$0^{\circ}C$, for 5 minitues. The device characteristics at 5V were as follows: Dark currents were distributed around 1nA. Capacitance was 1.6pF and responsivity was above 0.85 mA/mW for 1.3${\mu}{\textrm}{m}$ wavelength. Measured cut-off frequency(-3dB) at -5V was 1.1㎓.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.270-273
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• 2000

We have fabricated and analyzed photodiodes for optical link with Si pin structures. As the results of experiment, the web patterned photodiode(type C) with $p^{+}$-guard ring showed low junction capacitance of 6~7 pF at $V_{R}$=-5V and high separation ability for optical signal(dark current : $\leq$ 5 nA, optical signal current : $\geq$ 340 nA) due to the small effective $p^{+}$-n junction area and the expanded electric field region. The fabricated Si pin photodiode can be applicable for detecting an optical signal with the wavelength of about 660~670 nm. It can also be integrated with the twin well CMOS structure to develope an one chip based optical receiver IC. IC.C.

• Journal of Sensor Science and Technology
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• v.20 no.1
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• pp.14-18
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• 2011

An analytical pinning-voltage model of a pinned photodiode has been proposed and derived. The pinning-voltage is calculated using doping profiles based on shallow- and exponential-junction approximations. Therefore, the derived pinning-voltage model is analytically expressed in terms of the process parameters of the implantation. Good agreement between the proposed model and simulated results has been obtained. Consequently, the proposed model can be used to predict the pinning-voltage and related performance of a pinned photodiode in a CMOS active pixel sensor.

• Proceedings of the KIEE Conference
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• 2002.07d
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• pp.2285-2288
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• 2002

Recently, electronic personal dosimeters based upon silicon PIN photodiode or miniature GM tube were developed and have attracted a lot of attention because of the advantages of their nature such as indication of dose rate and the cumulative dose, and facilitation of record keeping. In this paper, we have developed a high-sensitivity electronic personal dosimeter with silicon PIN photodiode. The electronic personal dosimeter is constructed with silicon PIN photodiode, preamplifier, and shaping amplifier. To show the effectiveness of electronic personal dosimeter, we conducted nuclear radiation experiments using $\gamma$-ray Ba-133, Cs-137, and Co-60. The electronic personal dosimeter have a good linearity on $\gamma$-ray energy and activity.

• Journal of information and communication convergence engineering
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• v.1 no.1
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• pp.23-26
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• 2003

A photodiode capable of obtaining a sufficient photo/dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as a schottky barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. Growth of high quality alumina($Al_{2}O_{3}$) film using anodizing technology is proposed and analyzed by experiment. We have obtained the film with a superior characteristics

• Journal of the Optical Society of Korea
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• v.3 no.1
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• pp.27-31
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• 1999

The two-photon absorption of a SiC photodiode was utilized to obtain autocorrelation signals of the pulses from a mode-locked Rh6G dye laser. The autocorrelation signals were in good agreement with those obtained by a conventional autocorrelator using a second harmonic crystal and photomultiplier tube. The sensitivity of the autocorrelator with the SiC photodiode was about $4{\times}10^3 {(mW)}^2$ . From these results it was demonstrated that the SiC photodiode is suitable as a nonlinear device for an autocorrelation measurement in the visible range.