• 한국레이저가공학회지
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• 제5권3호
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• pp.21-30
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• 2002

In automotive industry, the studies about light weight vehicle and improving the productivity have been accomplished. For that, TRIP steel was developed and research for the laser welding process have been performed. In this study, the monitoring system using photodiode was developed for laser welding process of TRIP steel. With measuring light, neural network model for estimating bead width and tensile strength was made and weld quality classification algorithm was formulated with fuzzy inference method.

• 전자통신동향분석
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• 제8권1호
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• pp.92-110
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• 1993

광통신의 전송용량을 증가시키는 방법의 한가지로 전송속도의 증대에 관한 연구개발이 국내외에서 진행되어 왔다. 전송속도가 증가하여 Gb/s 급 이상이 되면 수신단 전치증폭기의 잡음이 급격히 증가하게 되어 수신감도가 떨어지게 되는데 이는 곧 중계기의 간격 감소로 인한 경제성의 저하를 의미한다. 이러한 수신단의 수신감도 저하를 극복하는 방법의 하나로 내부 이득을 갖는 APD(Avalanche Photodiode)를 수광소자로 사용하고자 하는 연구가 진행되어 왔다. 본 고에서는 InGaAs를 흡수층으로 하는 광통신용 APD의 구조, 동작특성 및 최근 연구동향을 소개하고자 한다.

• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.196-200
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• 1989

The physical properties related to the GaInAs/InP crystal grown by LPE are discussed in terms of both the design and operation characteristics of the GaInAs/InP Pin photodiode has cutoff frequency of 358 MHz and responsivity, 0.53 A/W (λ=1.3${\mu}{\textrm}{m}$), with dark current density as low as 4$\times$10-4/$\textrm{cm}^2$ under reverse bias voltage of 5V.

• ETRI Journal
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• 제38권4호
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• pp.665-674
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• 2016

We designed and fabricated a semiconductor optical amplifier-integrated dual-mode laser (SOA-DML) as a compact and widely tunable continuous-wave terahertz (CW THz) beat source, and a pin-photodiode (pin-PD) integrated with a log-periodic planar antenna as a CW THz emitter. The SOA-DML chip consists of two distributed feedback lasers, a phase section for a tunable beat source, an amplifier, and a tapered spot-size converter for high output power and fiber-coupling efficiency. The SOA-DML module exhibits an output power of more than 15 dBm and clear four-wave mixing throughout the entire tuning range. Using integrated micro-heaters, we were able to tune the optical beat frequency from 380 GHz to 1,120 GHz. In addition, the effect of benzocyclobutene polymer in the antenna design of a pin-PD was considered. Furthermore, a dual active photodiode (PD) for high output power was designed, resulting in a 1.7-fold increase in efficiency compared with a single active PD at 220 GHz. Finally, herein we successfully show the feasibility of the CW THz system by demonstrating THz frequency-domain spectroscopy of an ${\alpha}$-lactose pellet using the modularized SOA-DML and a PD emitter.

• 대한전자공학회논문지TE
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• 제42권3호
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• pp.45-50
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• 2005

산업용, 의학용 및 군사용, 환경감시용 등 다양한 분야에서 UV 카메라가 이용되고 있다. 높은 분해능과 고효율을 가진 GaN 계열의 III-V족 질화물 반도체를 이용하여 제작한 UV 센서인 포토다이오드로 부터 최적의 자외선 응답을 읽어낼 수 있는 ROIC(ReadOut IC)를 개발 했다. FPA(Focal Plane Array)용 UV $8{\times}8$ ReadOut IC(ROIC)를 설계를 위하여 포토다이오드 타입 센서 소자를 커패시터로 모델링하였다. ROIC는 검출되는 신호를 받아 이를 증폭하고 잡음제거 필터링을 거쳐 픽셀 단위로 순차적으로 출력하는 기능을 수행하도록 하였다. ROIC는 $0.5{\mu}m$ 2Poly, 3Metal N-well CMOS process를 이용하여 제작되었으며, 이방성 전도성 페이스트 (Anisotropic Conductive Paste:ACP)를 사용하는 gold stud bumping 공정으로 ROIC와 포토다이오드 어레이를 하이브리드 패키지 (package)한 후 PC에서 자외선 영상으로 확인함으로써 ROIC의 동작을 검증하였다.

• Journal of information and communication convergence engineering
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• 제3권4호
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• pp.179-183
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• 2005

A photodiode capable of obtaining a sufficient photo/ dark current ratio at both forward bias state and reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as an insulator barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. A good quality alumina $(Al_2O_3)$ film is formed by oxidation of aluminum film using electrolyte solution of succinic acid. Alumina is used as a potential barrier between amorphous silicon and aluminum. It controls dark-current restriction. In case of photodiodes made by changing the formation condition of alumina, we can obtain a stable dark current $(\~10^{-12}A)$ in alumina thickness below $1000{\AA}$. At the reverse bias state of the negative voltage in ITO (Indium Tin Oxide), the photo current has substantially constant value of $5{\times}10^{-9}$ A at light scan of 100 1x. On the other hand, the photo/dark current ratios become higher at smaller thicknesses of the alumina film. Therefore, the alumina film is used as a thin insulator barrier, which is distinct from the conventional concept of forming the insulator barrier layer near the transparent conduction film. Also, the structure with the insulator thin barrier layer formed near the lower electrode, opposed to the ITO film, solves the interface problem of the ITO film because it provides an improved photo current/dark current ratio.

• International Journal of Precision Engineering and Manufacturing
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• 제8권2호
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• pp.54-58
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• 2007

This paper describes an atomic force microscope (AFM)-based instrument for measuring the nanoscale cutting edge profiles of diamond cutting tools. The instrument consists of a combined AFM unit and an optical sensor to align the AFM tip with the top of the diamond cutting tool edge over a submicron range. In the optical sensor, a aser beam is emitted from a laser diode along the Y-axis and focused to a small beam spot with a diameter of approximately $10{\mu}m$ at the beam waist, which is then received by a photodiode. The top of the tool edge is first brought into the center of the beam waist by adjusting it in the X-Z-plane while monitoring the variation in the photodiode output. The cutting tool is then withdrawn and its top edge position at the beam center is recorded. The AFM tip can also be positioned at the beam center in a similar manner to align it with the top of the cutting edge. To reduce electronic noise interference on the photodiode output and thereby enhance the alignment accuracy, a technique is applied that can modulate the photodiode output to an AC signal by driving the laser diode with a sinusoidal current. Alignment experiments and edge profile measurements of a diamond cutting tool were carried out to verify the performance of the proposed system.

• 한국전자통신학회논문지
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• 제9권5호
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• pp.555-560
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• 2014

본 논문에서 850nm~1000nm 파장대역에서 레이저를 검출하기 위한 고감도 실리콘 포토다이오드를 제조하고 전기적 및 광학적 특성을 분석하였다. 소자의 크기는 $5000{\mu}m{\times}2000{\mu}m$이며 두께는 $280{\mu}m$로 제조하여 TO-5 형태로 패키징 하였다. 전기적 특성으로 암전류는 5V 역 전압 일 때 0.1nA의 값을 나타내었으며 정전용량은 0V일 때 1kHz 주파수 대역에서 32.5pF와 200kHz 주파수 대역에서 32.4pF로 적은 정전용량의 값을 나타내었다. 또한 출력신호의 상승시간은 10V의 전압일 때 20.92ns로 고속 응답특성을 확인하였다. 광학적 특성으로는 890nm에서 최대 0.57A/W의 분광감응도를 나타내었고 1000nm에서는 0.37A/W로 감소한 분광감응도를 나타내고 있지만 870nm~920nm 파장대역에서는 비교적 우수한 분광감응도를 나타내었다.

• Journal of Photoscience
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• 제9권2호
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• pp.475-478
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• 2002

In zoological research, penetration of light has been reported of the frontal bones of fish, birds, and reptiles, suggesting the existence of physiologically direct photic routes to frontal lobes and/or deep parts of the brain. We studied the influences of frontal exposure to photodiode light on frontal alpha wave and peripheral NK cells. Repetitive exposure of the subject's forehead to a red light diode (660nm) significantly increased the effective amplitude of the frontal alpha waves (using a mean frequency with a range of +1.0 Hz), peripheral NK activity, and the level of CD57-CD16+. Frontal alpha wave activity and the level of CD57-CD16+ increased, suggesting the possibility of a non-invasive procedure for the activation of the frontal lobe and the increase of NK cells. This light is considered to penetrate the frontal bones of humans directly, and to act on the frontal lobe and/or other immunological regulatory centers in the brain, resulting in some neuro-immunological changes.

• Journal of the Optical Society of Korea
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• 제16권1호
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• pp.1-5
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• 2012

This paper describes a 150-Mb/s monolithic optical receiver for plastic optical fiber link using a standard CMOS technology. The receiver integrates a photodiode using an N-well/P-substrate junction, a pre amplifier, a post amplifier, and an output driver. The size, PN-junction type, and the number of metal fingers of the photodiode are optimized to meet the link requirements. The N-well/P-substrate photodiode has a 200-${\mu}m$ by 200-${\mu}m$ optical window, 0.1-A/W responsivity, 7.6-pF junction capacitance and 113-MHz bandwidth. The monolithic receiver can successfully convert 150-Mb/s optical signal into digital data through up to 30-m plastic optical fiber link with -10.4 dBm of optical sensitivity. The receiver occupies 0.56-$mm^2$ area including electrostatic discharge protection diodes and bonding pads. To reduce unnecessary power consumption when the light is not over threshold or not modulating, a simple light detector and a signal detector are introduced. In active mode, the receiver core consumes 5.8-mA DC currents at 150-Mb/s data rate from a single 3.3 V supply, while consumes only $120{\mu}W$ in the sleep mode.