• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.56-59
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• 2004

HgTe and HgTe/CdTe core-shell structured nanocrystals(NCs) were synthesized in aqueous solution by colloidal method. HgTe and HgTe/CdTe NCs structure showed very similar XRD patterns because of the same lattice constant and crystal structure of both samples. The absorption and photoluminescence(PL) spectrum of the synthesized HgTe NCs revealed the strong exitonic peak in the IR region. The PL spectrum of HgTe/CdTe NCs have the intense peak in about 700nm shorter than that of HgTe by 400nm. The photocurrent measurement of colloidal NCs are performed using He-Ne laser for light source. The photocurrent of HgTe NCs shows the instant increased current response to light, but HgTe/CdTe NCs revealed a decreased current when lighted to the sample. In the vacuum condition, it shows reverse result that current increased under the illumination of light and it is thought that the molecules like the hydro-oxygen gas in the air give an important effect on the current mechanism.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.165-168
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• 2008

Ta-doped thin films were deposited on quartz and indium-tin oxide glass substrates using a co-sputtering method. The Ta-doped films formed a solid solution that induced structural changes from rutile to anatase phase. The anodic photocurrents of the Ta-doped $TiO_2$ electrodes were observed not only in UV but also in the visible light range. The photocurrent response in visible light on Ta-doped $TiO_2$ films are due to bandgap reduction.

• Nuclear Engineering and Technology
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• v.56 no.6
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• pp.2190-2194
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• 2024

The study investigates the dose-dependent direct X-ray sensing characteristics of Brucinium benzilate (BB) and N-acetylglycine (NAG) organic crystals. BB and NAG were prepared as a slurry and deposited as a thick film on a patterned metal electrode. The X-ray induced photocurrent response was examined for various exposure doses using an intraoral pulsed 70 keV X-ray machine connected to a source meter. Subsequently, the morphological properties and thickness of the thick films were analyzed using scanning electron microscopy (SEM). At a photon energy of 70 keV, the attenuation coefficient values for NAG and BB crystals were determined to be approximately 0.181 and 0.178 cm²/g, respectively. The X-ray stopping power of the crystals was measured using a suniray-2 X-ray imaging system. To evaluate the responsiveness of the sensors, the photocurrent sensitivity and noise equivalent dose rate (NED) were calculated for both thick films. The findings demonstrated a noteworthy capability of sensing low doses (mGy), thereby suggesting the potential application of these organic materials in X-ray sensor development.

• KSBB Journal
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• v.14 no.6
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• pp.643-650
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• 1999

An artificial photoreceptor composed of bacteriorhodopsin(bR)/flavin complex Langmuir-Blodgett(LB) films was developed by mimicking the human visual system. bR and flavin molecules were deposited onto solid substrate by LB technique, and the deposition of two molecules was proved by UV/VIS absorption spectroscopy and atomic force microscopy(AFM). Based on AFM images and photocurrent generation from the LB films, the optimal conditions for device fabrication were determined. With a series of light illuminations, the generated photocurrent could be detected, and the response characteristics of two molecules could be clearly distinguished from each other. According to the obtained signal shapes, three distinctive regions could be found in the obtained action spectrum. Using a correlation between the photocurrent generation and the wavelength of the input light, it was possible to organize the basic rules to interpret the wavelength of the input light. It is concluded that the proposed artificial photoreceptor would e applicable to the bioelectronic device for color recognition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.349-352
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• 2004

The $CdS_{1-x}Se_x$ thin films were grown on the GaAs(100) wafers by a Hot Wall Epitaxy method(HWE). The temperatures the source and the substrate temperature are $580^{\circ}C\;and\;440^{\circ}C$ respectively. The crystalline structure of thin films was investigated by double crystal X-tay diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time.

• Bulletin of the Korean Chemical Society
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• v.8 no.5
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• pp.362-366
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• 1987

Modification of n-Si electrodes coated by photogalvanostatically with polyaniline and polypyrrole in aqueous solutions considerably enhanced the stability and the spectral response of the photoelectrodes. A polypyrrole coated electrode incorporated with redox couple $Fe(CN)_{6}^{3-_6}$ / $Fe(CN)_{6}^{4-_6}$ yielded a photocurrent density of 400${\mu}A/cm^2$ for about 120 hours. Broad spectral responses over 300-850 nm were observed for both polymer coated electrodes of which polypyrrole coated one showed better current conversion efficiency.

• Current Optics and Photonics
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• v.6 no.4
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• pp.367-374
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• 2022

A photodetector based on a reduced graphene oxide (RGO)/n-Si heterojunction with high responsivity, detectivity and fast response speed is presented. Here, we put forward a simple vacuum filtration method to prepare RGO film and transfer it onto an n-Si substrate to form an RGO/n-Si heterojunction. The experimental results show that the heterojunction has good rectification characteristics, and the response and recovery time are less than 0.31 s and 0.25 s, respectively. Under 470 nm light conditions at -2 V applied voltage, the responsivity and detectivity of the device are 65 mA/W and 4.02 × 10¹⁰ cmHz^1/2W^-1, respectively. The simple preparation process and good performance of the RGO/n-Si heterojunction make it a promising material for photoelectric detection, especially in the near-ultraviolet band.

• Solar Energy
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• v.10 no.2
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• pp.59-68
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• 1990

In this paper, photoconductive pure CdSe films and CdSe films doped with various impurities are fabricated by vaccum deposition and subsequent heat treatment in vaccum. The substrate is kept at $200^{\circ}C$ during deposition and temperature generally makes the films more photoconductive. The photocurrent of the films increase linearly with light illumination. Spectral response of photoconductivity is measured at the wave length range of 380nm to 850nm. The maximum response is found at 700nm in pure CdSe films, but it shifts to the longer wavelength in impurity-doped CdSe films. Photo-response of the pure CdSe films are more sensitive at lower temperature, while the impurity-doped films show the opposite trend.

• Korean Journal of Materials Research
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• v.29 no.12
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• pp.790-797
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• 2019

To improve photocatalytic performance, CdS nanoparticle deposited TiO₂ nanotubular photocatalysts are synthesized. The TiO₂ nanotube is fabricated by electrochemical anodization at a constant voltage of 60 V, and annealed at 500 for crystallization. The CdS nanoparticles on TiO₂ nanotubes are synthesized by successive ionic layer adsorption and reaction method. The surface characteristics and photocurrent responses of TNT/CdS photocatalysts are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), UV-Vis spectrometer and LED light source installed potentiostat. The bandgaps of the CdS deposited TiO₂ photocatalysts are gradually narrowed with increasing of amounts of deposited CdS nanoparticles, which enhances visible light absorption ability of composite photocatalysts. Enhanced photoelectrochemical performance is observed in the nanocomposite TiO₂ photocatalyst. However, the maximum photocurrent response and dye degradation efficiency are observed for TNT/CdS30 photocatalyst. The excellent photocatalytic performance of TNT/CdS30 catalyst can be ascribed to the synergistic effects of its better absorption ability of visible light region and efficient charge transport process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.42-47
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• 2000

Long-wavelength infrared (LWIR) detectors made of self-assembled quantum dots embedded in the channel region of high electron mobility transistor (HEMT) is demonstrated. Above 180 K, the detector shows low dark currents due to strong confinement effect of electrons in InAs quantum dots and exhibits the broad spectral response ranging from 7 mm to 11 mm. The peak detectivity ($D^*$) of $1.93{\times}10^{10}cmHz^{1/2}/W$ is obtained at 9.4 mm. The photocurrent characteristics as a function of applied bias are similar to that of normal FETs, while the photocurrent decreases as the applied electric field exceeds $2{\times}10^3V/cm$ because of the increased dark current.