• 대한기계학회논문집B
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• 제20권11호
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• pp.3666-3675
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• 1996

A new hardware temperature compensation method for hot-wire anemometer is investigated and an analog compensating circuit is proposed in this article. A photoconductive cell is introduced here as a variable resistor in the anemometer bridge and the linearized output of a thermistor is used to monitor the input of the photoconductive cell. In contrast with the conventional method, any type of temperature sensor can be used for compensation if once the output of thermometer varies linearly with temperature. So the present technique can diversify the compensating means from a conventional passive compensating resistance to currently available thermometers. Because the resistance of a photoconductive cell can be set precisely by adopting a stabilizing circuit whose operation is based on the integration function of the operational amplifier, the accuracy of compensation can be enhanced. As an example of linearized thermometer, thermistor sensor whose output is linearized by a series resistor was used to monitor the fluid temperature variation. Validation experiment is conducted in the temperature ranged from 30 deg. C to 60 deg. C and the velocity up to 40 m/s. It is found that the present technique can be adopted as a compensating circuit for anemometer and hot-wire type airflow meter.

• 대한기계학회논문집B
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• 제20권1호
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• pp.295-303
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• 1996

A new temperature compensation technique for hot-wire anemometer is proposed in this article. In contrast to the available compensation techniques, a photoconductive cell is introduced here as a variable resistor in the bridge. The major advantage of adopting an active component such as photoconductive cell is that temperature compensation can be achieved by using any kind of temperature sensors, once the output of temperature sensor is given as a voltage. Thereby, the temperature compensation can be made automatically and intelligently by a computer software or a hardware device. Validation experiments using a photoconductive cell with a thermocouple-thermometer are conducted in the temperature range from 3$0^{\circ}C$ to 5$0^{\circ}C$ and the velocity ranges from 8 m/s to 18 m/s.

• 센서학회지
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• 제7권5호
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• pp.350-355
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• 1998

인쇄/소결 방법으로 광감도가 매우 큰 CdS다결정 후막을 만들고 이를 이용하여 광전도 셀을 제작하였다. 낱알 크기는 $4\;{\mu}m$ 정도였다. 광전도 셀은 불순물로 첨가한 $CuCl_2$ 양이 0.06 - 0.12 mg 정도이면 감도와 광전류와 암전류 비율이 각각 0.8과 $10^5$ 이상을 나타내었고 응답파장은 511 nm 였다. 또한 주파수 특성을 나타내는 응답시간은 오름시간과 감쇠시간이 각각 50과 20 ms 정도 이였으며 최대허용 소비전력은 80 mW 이상이었다. 이상과 같이 인쇄/소결 방법으로 제작된 광전도 셀은 CdS 1g당 $CuCl_2$ 양이 0.06-0.12 mg 정도 주입되면 센서로서 좋은 특성을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.81-81
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• 2008

Applications of CdS films in this study are to exhibit a high conductivity when they are exposed at light with visible wavelength and sequentially to show a low conductivity in dark state. For this purpose, CdS films should have a high photosensitivity, still maintaining a high conductivity at a visible light. In this study, CdS films were prepared at room temperature on glass substrates by rf magnetron sputtering. In order to increase the photo-conductivity in visible light, various defect levels should be located within the CdS band gap. In order to nucleate the defect sites within the CdS band gap, CdS films were deposited on glass substrates at room temperature using various $H_2$/(Ar+$H_2$) flow ratios by an rf magnetron sputtering. Through the investigation of the structural and photoconductive properties of CdS films by an addition of hydrogen, the relationship between photo- and dark-resistance in CdS films was investigated in detail. 200-nm-thick CdS films for photoconductive sensor applications were prepared at various $H_2$/(Ar+$H_2$) flow ratios on glass substrates at room temperature by rf magnetron sputtering. Sulfur concentration in CdS films crystallized at room temperature with (002) preferred orientation depends directly on the hydrogen atmosphere and the surface roughness of the films gradually increases with increasing hydrogen atmosphere. Films deposited at 8% of $H_2$/(Ar+$H_2$) exhibit an abrupt decrease of dark- and photo-resistance, showing a low photo-sensitivity ($R_{dark}/R_{photo}$). Onthe other hand, films deposited at a hydrogen atmosphere of 42% exhibit a photo-sensitivity of $5\times10^3$, maintaining a photo-resistance of an approximately $2\times10^4\Omega$/square. The dark- and photo-resistance values of CdS films were related with a composition, surface roughness, and defect sites within the band gap.

• 센서학회지
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• 제7권1호
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• pp.17-22
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• 1998

$4{\mu}m$ 두께의 a-Se 광도전막을 이용한 HARP (high-gain avalanche rushing amorphous photoconductor) 촬상관을 제작하고 그 특성을 조사하였다. 타겟전압이 360 V 이상으로 증가함에 따라 촬상관의 신호전류는 급격하게 증가하였으나 암전류는 490 V의 전압까지 3.2 nA이하로 억제되었다. $1.1{\times}10^{6}V/cm$의 전기장에서 440 nm의 파장에 대한 타겟의 양자효율은 약 4.3으로 나타났다. 또한 촬상관의 진폭응답은 800 TV line에서 7.5 %였으며 잔상은 3.4%였다.

• 마이크로전자및패키징학회지
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• 제27권2호
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• pp.1-10
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• 2020

The technology and market size of image sensors continue to develop thanks to the release of image sensors that exceed 100 million pixels in 2019 and expansion of black box camera markets for vehicles in addition to existing mobile applications. We review the technology flow of image sensors that have been constantly evolving for 40 years since Hitachi launched a 200,000-pixel image sensor in 1979. Although CCD has made inroads into image sensor market for a while based on good picture quality, CMOS image sensor (CIS) with active pixels has made inroads into the market as semiconductor technology continues to develop, since the electrons generated by the incident light are converted to the electric signals in the pixel, and the power consumption is low. CIS image sensors with superior characteristics such as high resolution, high sensitivity, low power consumption, low noise and vivid color continue to be released as the new technologies are incorporated. At present, new types of structures such as Backside Illumination and Isolation Cell have been adopted, with better sensitivity and high S/N ratio. In the future, new photoconductive materials are expected to be adopted as a light absorption part in place of the pn junction.

• 한국광학회지
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• 제19권4호
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• pp.249-254
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• 2008

새 구조의 액정 엑스선 감지기를 만들었다. 이것은 액정판을 만들고 유리판을 얇게 식각한 다음, 그 유리판 위에 반사막과 광전도층을 연속하여 입힌 구조이다. 새 구조의 액정엑스선 감지기는 공정의 안정성, 대면적화, 감도 등에서 이미 상품화된 엑스선 감지기와도 충분히 경쟁할 수 있으며, 따라서 성공적으로 상용화 할 수 있음을 확인했다.

• 센서학회지
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• 제1권1호
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• pp.53-57
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• 1992

본 연구는 $CdS_{1-x}Se_{x}$의 박막을 제작하고 그 전기-광학적인 특성을 조사한 것이다. 전자선 가열증착법을 이용하여 $CdS_{1-x}Se_{x}$을 알루미나 기판위에 $1.5{\times}10^{-7}$ torr의 압력, 4kV의 전압, 2.5 mA의 전류 그리고 기판온도를 $300^{\circ}C$로 유지하여 증착하였다. 증착된 $CdS_{1-x}Se_{x}$ 박막은 X-ray 회절 실험을 통하여 볼 때, 육방정계의 결정구조를 가지며 성장되었다. $CdS_{1-x}Se_{x}$ 도전막은 특정분위기에서 $550^{\circ}C$, 30분간 열처리함으로써 높은 광전도성을 나타내게 되었다. 또한 Hall 효과, 광전류 스펙트럼, 감도, 최대 허용 전력과 응답시간 등을 조사하였다.

• 센서학회지
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• 제7권2호
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• pp.131-139
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• 1998

$CdS_{0.67}Se_{0.33}$ 단결정을 승화법으로 성장시켜 Laue 배면 반사법 (back refection Laue method)으로 결정성과 면의 방향이 (0001)임을 알아보았고, EDS(Energy Dispersive X-ray Spectrometer)를 이용하여 소성비가 $CdS_{0.67}Se_{0.33}$ 임을 확인하였다. Van der Pauw 법으로 Hall 효과를 측정하여 운반자 농도(carrier density)와 이동도(mobility)의 온도의존성을 연구하였으며, 이동도는 30 K에서 150 K까지는 불순물에 의한 산란 (impurity scattering)에 기인하고 있으며, 150 K에서 293 K까지는 격자 산란 (lattice scattering)에 따라 감소하였다. 또한 운반자 농도의 In n 대 (1/T)에서 구한 활성화 에너지는 0.21 eV였다. 광전도 셀(cell)의 특성으로 spectral response, 최대 허용 소비전력(maximum allowable power dissipation: MAPD), 광전류와 암전류(photocurrent/darkcurrent: pc/dc) 및 응답시간을 측정하였다. Cu 증기분위기에서 열처리한 광전도 셀의 경우 ${\gamma}$ = 0.99, pc/dc = $1.84{\times}10^{7}$, MAPD : 323mW, rise time : 9.3ms, decay time : 9.7ms로 가장 좋은 특성을 얻었다.

• 한국세라믹학회지
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• 제55권1호
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• pp.55-60
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• 2018

In this study, quantum dots composed of $Mn^{2+}$ doped ZnS core and ZnS shell were synthesized using MPA precursor at room temperature. The ZnS: Mn/ZnS quantum dots were prepared by varying the content of MPA in the synthesis of ZnS shells. XRD, Photo-Luminescence (PL), XPS and TEM were used to characterize the properties of the ZnS: Mn/ZnS quantum dots. As a result of PL measurement using UV excitation light at 365 nm, the PL intensity was found to greatly increase when MPA was added at 15 ml, compared to the case with no MPA; the PL peaks shifted from 603 nm to 598 nm. A UV sensor was fabricated by using a sputtering process to form a Pt pattern and placing a QD on the Pt pattern. To verify the characteristics of the sensor, we measured the electrical properties via irradiation with UV, Red, Green, and Blue light. As a result, there were no reactions for the R, G, and B light, but an energy of 3.39 eV was produced with UV light irradiation. For the sensor using ZnS: Mn/ZnS quantum dots, the maximum current (A) value decreased from $4.00{\times}10^{-11}$ A to $2.62{\times}10^{-12}$ A with increasing of the MPA content. As the MPA content increases, the PL intensity improves but the electrical current value dropped because of the electron confinement effect of the core-shell.