Fabrication and Characteristics of HARP Image Pickup Tube Using a-Se Photoconductive Film

a-Se 광도전막을 이용한 HARP 촬상관의 제작 및 특성

A HARP (high-gain avalanche rushing amorphous photoconductor) image pickup tube using $4{\mu}m$ thick a-Se photoconductive film was fabricated and its characteristics were investigated. When the target voltage was increased more than 360 V, the signal current increases rapidly but the dark current of the tube was suppressed less than 3.2 nA up to the voltage of 490 V And the quantum efficiency of the target was about 4.3 at the electric field of $1.1{\times}10^{6}V/cm$ and the wavelength of 440 nm. Also the amplitude response of the HARP tube was 7.5% at 800 TV lines, and the decay lag was 3.4%.

$4{\mu}m$ 두께의 a-Se 광도전막을 이용한 HARP (high-gain avalanche rushing amorphous photoconductor) 촬상관을 제작하고 그 특성을 조사하였다. 타겟전압이 360 V 이상으로 증가함에 따라 촬상관의 신호전류는 급격하게 증가하였으나 암전류는 490 V의 전압까지 3.2 nA이하로 억제되었다. $1.1{\times}10^{6}V/cm$의 전기장에서 440 nm의 파장에 대한 타겟의 양자효율은 약 4.3으로 나타났다. 또한 촬상관의 진폭응답은 800 TV line에서 7.5 %였으며 잔상은 3.4%였다.