• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.404-409
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• 2004

We fabricated photo-sensor for fluorescence detection in LOC. LOC is high throughput screening system. Our LOC screens biochemical reaction of protein using the immunoassay, and converts biochemical reaction into electrical signal using LIF(Laser Induced Fluorescence) detection method. Protein is labeled with rhodamine intercalating dye and finger PIN photodiode is used as photo-sensor We measured fluorescence emission of rhodamine dye and analyzed tendency of fluorescence detection, according to photo-sensor size, light intensity, and rhodamine concentration. Detection current was almost linearly proportional to two parameters, intensity and concentration, and was inversely proportional to photo-sensor size. Integrated LOC consists of optical-filter deposited photo-sensor and PDMS microchannel detected 50 (pg/${mu}ell$) rhodamine. For integrated LOC including light source, we used green LED as the light source and measured emitted fluorescence.

• 한국농공학회:학술대회논문집
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• 한국농공학회 2000년도 학술발표회 발표논문집
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• pp.200-205
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• 2000

The purpose of this study is to develop an economical radiation sensor using photo diodes. An electronic circuit was developed. The behavior of the radiation sensor was evaluated by increasing number of photo diodes. The sensor became more reliable by the increase in number of photo diodes. It was showed that the photo diodes sensor would be applicable.

• 한국정밀공학회지
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• 제29권11호
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• pp.1164-1169
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• 2012

This paper presents a study of an integrated infrared (IR) photo sensor for display application. We fabricated hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and hydrogenated amorphous silicon germanium thin film transistor (a-SiGe:H TFT) which were bottom gate structure. We investigated the dependence of a-SiGe:H TFT characteristics on incident wavelengths. We proposed photo sensor which responded to wavelengths of IR region. Proposed pixel circuit of photo sensor was consists of switch TFT and photo TFT, and one capacitor. We developed integrated photo sensor circuit and investigated the performance of the proposed sensor circuit according to the input wavelengths. The developed photo sensor circuit with a-SiGe:H TFT was suitable for IR.

• 디지털융복합연구
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• 제12권11호
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• pp.387-393
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• 2014

본 연구는 가축을 대상으로 이표용 맥파 압력센서, 전도성 섬유센서, 광센서 중 사육 가축에 적용 할 최적의 맥파 센서를 분석하기 위하여 소10마리, 돼지 10마리를 대상으로 맥파 압력센서, 전도성 섬유센서, 광센서를 적용한 결과, 소는 광센서가 압력센서와 전도성 섬유센서에 비하여 평균값에 대한 표준편차가 작은 것으로 나타나 광센서가 가장 안정적인 것으로 나타났고, 돼지는 압력센서, 전도성 섬유센서, 광센서 모두 안정적인 맥파수를 나타냈다. 따라서 소와 같이 신체부의의 굴곡이 많고 털이 길고 조밀한 가축의 경우, 광센서를 이용한 맥파 측정에 가장 효율적인 것으로 나타났다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.517-520
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• 2003

The snow-fatting measurement system including the snow sensor applying the photo-coupler is investigated in this study and using this snow sensor the height of snow fallen is measured. To measure the snow depth, five photo sensors are arranged with 5 mm distance. The snow-falling measurement system, which is measuring the motor revolution controlled with stepping motor, is mounted above the snow surface. From this work, it is feasible to measure quantitatively the snow on real time. Its software implements a proven method to achieve valid measurements also under difficult conditions as future study. In cases where the snow sensor is applieded to the prediction of snow in the meteorological observation system and the snow removing system, it is recommend the GRS-Option in order to improve the quality of snow measurements for better compensation.

• 한국산업정보학회논문지
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• 제15권5호
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• pp.29-35
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• 2010

본 논문에서는 광센서를 이용하여 컬러 디스플레이 장치를 사용하는 다양한 주위 조명광을 판별할 수 있는 시스템을 구현하였다. 디스플레이를 사용하는 외부 조명광을 판별하기 위해서 Ye와 Cy 두 출력을 갖는 광센서를 사용하여 조명광 판별 시스템을 구현하였고, 구현한 실제 시스템에 대한 실험 결과 조도가 변하는 다양한 조명광에 대해서 광센서의 출력 전압비(Ye/Cy)로 조명광의 판별이 가능한 것을 확인하였다.

• 한국농공학회지
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• 제43권3호
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• pp.39-45
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• 2001

The purpose of this study is to develop an economic and practical radiation sensor using photo diodes which is useful for estimating ET in greenhouse environment. An electronic circuit was then designed. Out put signal of photo diode is amplified with a LM318 transistor and is displayed in a LCD with value from zero to 255. The output signal was compared with that of a ready-made pyranometer. The behavior of the photo diode radiation sensor was evaluated by increasing number of photo diodes. The sensor became more reliable with increased number of photo diodes. Developed radiometer was tested with calibrated relation between pyranometer radiation and photo diode output. It was showed that the photo diodes radiometer would be applicable for the greenhouse environment.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1993년도 한국자동제어학술회의논문집(국제학술편); Seoul National University, Seoul; 20-22 Oct. 1993
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• pp.550-553
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• 1993

Methods of Alternating Noise Canceling were previously developed for the optical instrumentation;one using a dual photo sensor and another using a single photo sensor that could cancel normal mode noise on a transmission line, even if the noise was of equal status noise. But the methods could not remove noise on sensor line. This paper discusses a new method of using a photo sensor with a resistance sensordummy, effectively canceling equal status normal mode noise not only on a sensor line but also on a transmission line of an optical instrumentation. The accuracy of this method has been verified by experiments using sinusoidal wave as an equal status noise on a sensor line and/or rectangular wave as an equal status wide band noise on a transmission line respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.956-958
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• 1999

We designed and fabricated p-type MOSFETs with floating gate in n-type well lesion and examined their photo characteristics. The fabricated MOBFETs showed a high photo-respsonse characteristics, indicating a possibility as a photo sensor. The structures of MOSFETs were changed as to the number of gate and channel. As the number of channel increased, the induced current by light source s increased. However, the effect of the number of gate was negligble on the photo-response characteristics of the device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.187-190
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• 2000

We fabricated general photo diode, surface etched photo diode and floating gate MOSFET by CMOS process. In a design stage, we expect that surface etched photo diode will be improved as to photo sensitivity. However, because the surface of silicon was damaged in etching process, the surface etched diode had a high dark current as well as low photo current level. Finally, we examined the current-voltage properties for the floating gate MOSFET on n-well and confirmed that the device can be act as an efficient photo-sensor. The floating gate MOSFET was operated in parasitic bipolar transistor mode.