• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.377-377
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• 2014

We demonstrate the high temperature-dependent electrical behavior at 2D multilayer MoS2 transistor. Our previous reports explain that the extracted field-effect mobility of good device was inversely proportional to the increase of temperature. Because scattering mechanism is dominated by phonon scattering at a well-designed MoS2 transistor, having, low Schottky barrier. However, mobility at an immature our $MoS_2$ transistor (${\mu}m$ < $10cm^2V^{-1}s^{-1}$) is proportional to the increase temperature. The existence of a big Schottky barrier at $MoS_2-Ti$ junction can reduce carrier transport and lead to lower transistor conductance. At high temperature (380K), the field-effect mobility of multilayer $MoS_2$ transistor increases from 8.93 to $16.9cm^2V^{-1}sec^{-1}$, which is 2 times higher than the value at room temperature. These results demonstrate that carrier transport at an immature $MoS_2$ with a high Schottky barrier is mainly affected by thermionic emission over the energy barrier at high temperature.

• 한국초전도ㆍ저온공학회논문지
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• 제9권4호
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• pp.24-27
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• 2007

The purpose of this work is to develop, integrate, and implement an optical characterization method to evaluate physical properties in coated conductors and investigate the local distribution of the causes of degraded performance. The method that we selected at this moment is Raman scattering spectroscopy, which is accompanied with measurements of local supercurrent transport, phase composition, microstructure, and epitaxy quality for coated conductors that range in size up to multi-meter-length tapes and that embrace the entire tape embodiment (substrate through cap layer). The establishment of Raman spectroscopy as an on-line process monitoring tool is our eventual goal of research, but it requires very robust and cost-effective equipments. We analyzed $YBa_2Cu_3O_7(YBCO)$ thin films grown at various substrate temperatures by using Raman spectroscopy. YBCO films were grown by a high-rate electron-beam co-evaporation method. Raman spectra of YBCO films with lower-transport properties exhibit additional phonon modes at ${\sim}300cm^{-1}$, ${\sim}600cm^{-1}$ and ${\sim}630cm^{-1}$, which are related to second-phases such as $Ba_2Cu_3O_{5.9}$ and $BaCuO_2$. We propose a new method to characterize Raman spectra of coated conductors for an in-line quality control.

• Journal of Korean Vacuum Science & Technology
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• 제6권1호
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• pp.12-15
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• 2002

The physical properties, including magneto-optical and transport ones, of Ni$_2$MnG$_2$ alloy in the martensitic and austenitic states were investigated. The dependence of the temperature coefficient of resistivity on temperature shows kinks at the structural and ferro-para magnetic transitions. Electron-magnon and electron-phonon scattering are analyzed to be the dominant scattering mechanisms of the Ni$_2$MnG$_2$ alloy in the martensitic and austenitic states, respectively. The experimental real parts of the off-diagonal components of the dielectric function present two sharp peaks, one at 1.9 eV and the other at 3.2 eV, and a broad shoulder at 3.5 eV, all are identified by the band-structure calculations. These peak positions are coincident with those in the corresponding optical-conductivity spectrum, which is thought to originate from the single-spin state in Ni$_2$MnG$_2$ alloy.

• Current Optics and Photonics
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• 제2권3호
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• pp.261-268
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• 2018

Stimulated polariton scattering (SPS) from the $A_1$ transverse optical (TO) modes of $BaTiO_3$ bulk crystal generating a terahertz (THz) wave with the noncollinear phase-matching (NPM) condition is theoretically investigated. To our best knowledge, this is the first report on THz wave generation from $BaTiO_3$ bulk crystal via SPS. Phase-matching (PM) characteristics in the NPM configuration are analyzed. Effective parametric gain lengths for the Stokes and THz waves in the NPM configuration are calculated. The effective parametric gain coefficient and absorption coefficient of the THz wave in $BaTiO_3$ are theoretically simulated. The THz phonon flux densities generated via SPS in $BaTiO_3$ are theoretically calculated by solving the coupled wave equations under the NPM condition. The PM characteristics and THz-wave parametric gain characteristics in $BaTiO_3$ are compared to those in $MgO:LiNbO_3$. The results of the analysis indicate that $BaTiO_3$ is an attractive optical crystal for efficient THz wave generation via SPS.

• Nuclear Engineering and Technology
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• 제52권9호
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• pp.2138-2150
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• 2020

We report the status of the cold neutron triple-axis spectrometer (Cold TAS) and thermal neutron triple-axis spectrometer (Thermal TAS) installed at HANARO. Cold TAS, whose specifications are standard across the world, is in the final phase of commissioning. Proper instrument operation was confirmed through a feasibility study of phonon measurements and data analyses with resolution convolution. In contrast, Thermal TAS is in the initial phase of commissioning, and improvement of the monochromator drum is now in progress from the viewpoint of radiation shielding. In addition, we report recent activities in the development of neutron basic elements, that is, film-coated Si-wafer collimators, which are promising for use in triple-axis spectroscopy, particularly in Cold TAS.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권6호
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• pp.305-311
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• 2004

Charge transport phenomena of polyaniline-DBSA/High Impact Polystyrene (PAM-DBSA/HIPS) blends have been studied through an examination of electrical conduction. HIPS used host polymer in the blends and PANI-DBSA obey a space charge limited conduction mechanism and a ohmic conduction mechanism respectively. However, PANI-DBSA/HIPS blends do not obey any classical conduction mechanism. Analysis of conduction mechanism revealed that the charging current of PANI-DBSA/HIPS blends increased with the increase of PANI-DBSA content. This result migrlt be explained by the reduction in the distance between PANI-DBSA particles enabling the charge carriers to migrate from a chain to a neighboring chain via hopping or micro tunneling. It was also found that the charging current of PANI-DBSA/HIPS blends decreased as the temperature was elevated, which is of typical phenomena in metals. It is speculated that the charge transport in PANI-DBSA particle was somewhat constrained due to strong phonon scattering.

• 한국자기공명학회논문지
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• 제24권1호
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• pp.16-22
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• 2020

Based on quantum transport theory, we investigated theoretically the magnetic field dependence of the quantum optical transition of quasi 2-dimensional Landau splitting system, in CdS and ZnO Through the analysis of the current work, we found the increasing properties of the cyclotron resonance line-profiles (CRLPs) which show the absorption power and the cyclotron resonance line-widths (CRLWs) with the magnetic field in CdS and ZnO We also found that that CRLWs, γ_total(B) of CdS < γ_total(B) of ZnO in the magnetic field region B < 15 Tesla.

• 대한전자공학회논문지SD
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• 제41권11호
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• pp.7-13
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• 2004

두께가 약 3 nm 인 게이트 산화막을 갖는 P 및 NMOSFET를 제조하여 높은 압력 (5 atm.)의 중수소 및 수소 분위기에서 후속 열처리를 각각 행하여 중수소 효과(동위원소 효과)를 관찰하였다. 소자에 대한 스트레스는 -2.5V ≤ V/sub g/ ≤-4.0V 범위에서 100℃의 온도를 유지하며 진행되었다. 낮은 스트레스 전압에서는 실리콘 계면에 존재하는 정공에 의하여 게이트 산화막의 열화가 진행되었다. 그러나 스트레스 전압을 증가시킴으로써 높은 에너지를 갖는 전자에 의한 계면 결함 생성이 열화의 직접적인 원인이 됨을 알 수 있었다. 본 실험조건에서는 실리콘 계면에서 phonon 산란이 많이 발생하여 impact ionization에 의한 "hot" 정공의 생성은 무시할 수 있었다. 중수소 열처리를 행함으로써 수소 열처리에 비해 소자의 파라미터 변화가 적었으며, 게이트 산화막의 누설전류도 억제됨이 확인되었다. 이러한 결과로부터 impact ionization이 발생되지 않을 정도의 낮은 스트레스 전압동안 발생하는 게이트 산화막내 결함 생성은 수소 결합과 직접적인 관계가 있음을 확인하였다.

• 한국재료학회지
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• 제29권2호
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• pp.116-120
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• 2019

We prepared $Y_3Al_5O_{12};Ce^{3+},Pr3^{+}$ transparent ceramic phosphor using a solid state reaction method. By XRD pattern analysis and SEM measurement, our phosphors reveal an Ia-3d(230) space group of cubic structure, and the transparent ceramic phosphor has a polycrystal state with some internal cracks and pores. In the Raman scattering measurement with an increasing temperature, lattice vibrations of the transparent ceramic phosphor decrease due to its more perfect crystal structure and symmetry. Thus, low phonon generation is possible at high temperature. Optical properties of the transparent ceramic phosphor have broader excitation spectra due to a large internal reflection. There is a wide emission band from the green to yellow region, and the red color emission between 610 nm and 640 nm is also observed. The red-yellow phosphor optical characteristics enable a high Color Rendering Index (CRI) in combination with blue emitting LED or LD. Due to its good thermal properties of low phonon generation at high temperature and a wide emission range for high CRI characteristics, the transparent ceramic phosphor is shown to be a good candidate for high power solid state white lighting.

• 한국진공학회지
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• 제17권1호
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• pp.51-57
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• 2008

나노크기의 Au-Si을 촉매로 급속열화학기상증착(rapid thermal chemical vapor deposition)법을 이용하여 Si(111) 기판에 성장한 Si 나노선의 구조적인 형태 변화와 광학적 특성을 연구하였다. 기상-액상-고상(vapor-liquid-solid) 성장법에 의한 Si 나노선 형성 과정에서 액상 입자인 Au-Si 나노점은 나노선 성장온도에서 촉매로 사용되었다. 이 액상 나노점이 형성된 Si 기판에 1.0Torr 압력과 $500-600^{\circ}C$ 기판 온도 하에서 $SiH_4$와 $H_2$의 혼합가스를 공급하여 Si 나노선을 형성하였다. Si 나노선 성장 후 형태를 전계방출 주사전자현미경(Field Emission Scanning Electron Microscope)으로 관찰한 결과, 대부분의 나노선이 균일한 크기로 기판 표면에 수직하게 <111> 방향으로 정렬된 것을 확인하였다. 형성된 나노선의 크기는 평균 직경이 ${\sim}60nm$이고 평균 길이가 ${\sim}5um$임을 확인하였다. 또한 고 분해능 투과전자현미경(High Resolution-Transmission Electron Microscope) 관찰을 통해 Si 나노선은 약 3nm의 비정질 산화층으로 둘러 싸여 있는 Si 단결정임이 분석되었다. 그리고 마이크로 라만 분광(Micro-Raman Scattering)법을 통한 광학적 특성 분석 결과, Si의 광학 포논(Optical Phonon) 신호 위치가 Si 나노선 구조의 영향으로 낮은 에너지 쪽으로 이동하며, Si 포논 신호의 폭이 비대칭적으로 증가함을 확인하였다.