• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.174-174
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• 2003

Highly (111)-oriented PZT [Pb(Zrl-xTix)O3] thin films in the Zr-rich rhombohedral phase-field were successfully fabricated on Pt(111)/Ti/SiO2/Si substrates by combining PLD method with sol-gel process. These highly (111)-oriented films can be used as model systems for polarized Raman scattering study of PZT in the rhombohedral-Phase field because the (111)-direction is the principal off-center axis of the rhombohedral ferroelectricity. For this purpose, we have fabricated PZT films employing two distinctive compositions : one with Zr/Ti = 90/10 (abbreviated as PZT90/10) and the other with Zr/Ti= 60/40 (PZT60/40). The PZT90/10 film belongs to the octahedrally distorted FR(LT) phase with a cell-doubled structure, whereas the PZT60/40 is in the high-temperature FR(HT) phase-field at room temperature. To clearly separate E(TO) phonon modes from Al(TO) modes of the (111)-oriented rhombohedral film, we have suitably devised Z(X,Y)Z and Z(X,X)Z backscattering geometries for E(TO) and Al (TO), respectively. The polarized scattering experiment demonstrated that both types of (111)-oriented rhombohedral films closely followed the Raman selection rule.

• ETRI Journal
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• 제17권3호
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• pp.17-43
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• 1995

We present a comprehensive derivation of the transport of holes involving an interacting two-valence-band system in terms of a generalized relaxation time approach. We sole a pair of semiclassical Boltzmann equations in a general way first, and then employ the conventional relaxation time concept to simplify the results. For polar optical phonon scattering, we develop a simple method th compensate for the inherent deficiencies in the relaxation time concept and apply it to calculate effective relaxation times separately for each band. Also, formulas for scattering rates and momentum relaxation times for the two-band model are presented for all the major scattering mechanisms for p-type GaAs for simple, practical mobility calculations. Finally, in the newly proposed theoretical frame-work, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain a direct comparison between the theory and recent available experimental results, which would stimulate further analysis toward better understanding of the complex transport properties of the valence band. The calculated Hall mobilities show a general agreement with our experimental data for carbon doped p-GaAs samples in a range of degenerate hole densities. The calculated Hall factors show $r_H$=1.25~1.75 over all hole densities($2{\times}10^{17}{\sim}1{\times}10^{20}cm^{-3}$ considered in the calculations.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.953-957
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• 2002

Single crystal 3C-SiC (cubic silicon carbide) thin-films were deposited on Si(100) wafer up to the thickness of 4.3 ${\mu}{\textrm}{m}$ by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane; ｛CH$_{3}$｝$_{6}$ Si$_{2}$) at 135$0^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC film was 4.3 ${\mu}{\textrm}{m}$/hr. The 3C-SiC epitaxial film grown on Si(100) wafer was characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), RHEED (reflection high energy electron diffraction), XPS (X-ray photoelecron spectroscopy), and Raman scattering, respectively. Two distinct phonon modes of TO (transverse optical) near 796 $cm^{-1}$ / and LO (longitudinal optical) near 974$\pm$1 $cm^{-1}$ / of 3C-SiC were observed by Raman scattering measurement. The heteroepitaxially grown film was identified as the single crystal 3C-SiC phase by XRD spectra (2$\theta$=41.5。).).

• 한국초전도ㆍ저온공학회논문지
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• 제17권4호
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• pp.16-20
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• 2015

We investigated optical properties of an electron-doped copper oxide high temperature superconductor, $Pr_{0.85}LaCe_{0.15}CuO_4$ (PLCCO) single crystal. We obtained the optical conductivity from measured reflectance at various temperatures. We found our data contained c-axis longitudinal optical (LO) phonon modes due to miscut and intrinsic lattice distortion. We applied an extended Drude model to study the correlations between charge carriers in the system. The LO phonons appear as strong sharp peaks in the optical scattering rate. We tried to remove the LO phonon modes by using the energy loss function, which also shows the LO phonons as peaks, and could not remove them completely. We extracted the electron-boson spectral density function using a generalized Allen's formula. We observed that the resulting electron-boson density show similar temperature dependence as hole-doped cuprates.

• 전기학회논문지
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• 제56권12호
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• pp.2202-2207
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• 2007

The present article investigates experimentally and theoretically thermal and optical characteristics of thin film structures through measurement of thermal conductivity of Pyrex 7740 and reflectance in silicon thin film. The $3{\omega}$ method is used to measure thermal conductivity of very thin film with high accuracy and the optical characteristics in thin films are studied to examine the influence of incidence angle of light on reflectance by using the CTM(Characteristics Transmission Method) and the 633 nm He-Ne laser reflectance measurement system. It is found that the estimated reflectance of silicon show good agreement with experimental data. In particular, the present study solves the EPRT(Equation of Phonon Radiative Transport) which is based on Boltzmann transport equation for predicting thermal conductivity of nanoscale film structures. From the results, the measured thermal conductivity is in good agreement with the previous published data. Moreover, thermal conductivities are estimated for different film thickness. It indicates that as film thickness decreases, thermal conductivity decreases substantially due to internal scattering.

• 대한전자공학회논문지SD
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• 제42권4호
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• pp.1-8
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• 2005

소오스와 드레인 근처에 포켓이온이 주입된 halo구조의 MOSFET에서 전송자의 이동도 감소는 포켓이온주입의 조건에 따라 이온화된 불순물의 증가에 따른 쿨롱(Coulomb) 산란율의 증가에 의한 이동도의 감소량보다 큰 이동도의 감소가 관측될 수 있다. 게이트 바이어스에 대한 이동도의 특성변화도 기존의 일차적인 쿨롱산란의 증가효과에 의한 해석과 비교하여 상이한 결과가 나타날 수 있음이 실험적으로 확인되고 있다. 본 연구에서는 포켓이온 주입에 의하여 쿨롱산란원이 되는 유효불순물 농도의 증가에 따른 일차적인 이동도의 감소효과를 벗어난 이동도 특성을 분석하여 이동도의 감소현상을 일반적으로 설명할 수 있는 개선된 해석적 모델을 제시하였다. 해석적인 결과를 도출하기 위하여 일차원 영역구분의 근사방법을 적용한 결과, 포켓이온 주입에 의하여 포논산란율 및 표면산란율(surface roughness scattering rate)의 증가도 이동도감소에 기여함이 보여 졌다. 채널의 전송자분포가 드레인 전류에 영향을 미치게 되므로 포켓이온에 의해 유발된 전송자분포의 효과를 분석하여 유효이동도가 추가적으로 감소함을 확인하였다.

• 대한전자공학회논문지
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• 제5권1호
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• pp.1-5
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• 1968

GaAs의 단결정은 Ga의 용액으로부터 epitaxial 방법으로 성장시키는데 300°K에서는 carrier concentration 10 /㎤에서 electron-mobility 7,500∼9,300㎠/V-sec. 정도의 것이 얻어지며 77°K에서는 electron-mobility 50,000∼95,000㎠/V-sec.의 것이 얻어진다. mobility-온도 관계곡선의 이론적인 것과 실험적인 것을 비교해 보면 77°K에서 430°K의 온도범위내에서 ion화한 불순물과 phonon이 주요한 scattering mechanism이라는 것을 나타낸다. 이것은 epitaxial층이 mobility를 제한하는 다른 결함을 별로 내포하지 않는다는 것을 의미한다. epitaxial층의 photoluminescence spectra는 심부에 존재하는 결함의 준위에 의한 방출을 나타내지 않는다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.362.1-362.1
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• 2016

InAs nanowires were synthesized by a vapor-liquid-solid method with InAs powder. The composition and crystalline structure of nanowires were confirmed by energy-dispersive spectroscopy (EDS) and high resolution transmission electron microscopy (HRTEM), respectively. The thermal conduction of nanowires was investigated by the optical method using Raman spectroscopy: i.e., the local temperature on nanowire was determined by laser heating. As temperature increased, the Raman peaks are shifted to low frequency and broadened. The temperature dependent Raman scattering experiments was realized on InAs nanowires with different percentages of zinc-blende and wurtzite structure. The temperature dependence on the nanowire structure has been successfully obtained: the phonon scattering was more increased in InAs heretostructure nanowires, compared to the InAs nanowires with homostructure. The result strongly suggests that the thermal conduction can be effectively controlled by ordered interface without any decrease in electrical conduction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.197-198
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• 2009

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC films, which were deposited on the thermally oxidized Si(100) substrate by the atmosphere pressure chemical vapor deposition (APCVD) method according to growth temperature. TO and LO phonon modes to 2.0m thick poly 3C-SiC deposited at $1180^{\circ}C$ were measured at 794.4 and $965.7\;cm^{-1}$ respectively. From the intensity ratio of $I_{(LO)}/I_{(TO)}$ 1.0 and the broad full width half maximum (FWHM) of TO modes, itcan be elucidated that the crystallinity of 3C-SiC forms polycrystal instead of disordered crystal and the crystal defect is small. At the interface between 3C-SiC and $SiO_2$, $1122.6\;cm^{-1}$ related to C-O bonding was measured. Here poly 3C-SiC admixes with nanoparticle graphite with the Raman shifts of D and G bands of C-C bonding 1355.8 and $1596.8\;cm^{-1}$. Using TO mode of 2.0 m thick poly 3C-SiC, the biaxial stress was calculated as 428 MPa.

• E2M - 전기 전자와 첨단 소재
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• 제9권6호
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• pp.564-571
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• 1996

We calculated the drift-velocities of electrons and holes of I $n_{0.53}$(A $l_{x}$G $a_{1-x}$ )$_{0.47}$As, which is used for semiconductor materials of high performance HBTs, along with the various doping concentrations and Al mole fractions as well as the electric fields by Monte Carlo experiment. Especially, for the valence bands the accuracy of hole-drift-velocity was improved in the consideration of intervalley scattering due to the inelastic scattering of acoustic phonon. From the results the empirical formulas of the low- and high field mobility of electrons and holes were extracted by using nonlinear least square fitting method. The accuracy of the formulas was proved by comparing the formula of low-field electron mobility as well as drift-velocity of I $n_{0.53}$ G $a_{0.47}$As and of low-field hole mobility of GaAs with the measured values, where the error was below 10%. For the high-field mobilities of electron and hole the results calculated by the formulas were very well matched with the MC experimental results except at the narrow field range where the electrons produced the velocity overshoot and the corresponding error was about 30%.0%. 30%.0%.