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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Analysis of Transport Parameters in an Interacting Two-Band Model with Application to $p^{+}$-GaAs

  • Kim, B.W. (ETRI) ;
  • Majerfeld, A. (Department of Electrical and Computer Engineering of University of Colorado)
  • Published : 1995.10.20
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Abstract

We present a comprehensive derivation of the transport of holes involving an interacting two-valence-band system in terms of a generalized relaxation time approach. We sole a pair of semiclassical Boltzmann equations in a general way first, and then employ the conventional relaxation time concept to simplify the results. For polar optical phonon scattering, we develop a simple method th compensate for the inherent deficiencies in the relaxation time concept and apply it to calculate effective relaxation times separately for each band. Also, formulas for scattering rates and momentum relaxation times for the two-band model are presented for all the major scattering mechanisms for p-type GaAs for simple, practical mobility calculations. Finally, in the newly proposed theoretical frame-work, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain a direct comparison between the theory and recent available experimental results, which would stimulate further analysis toward better understanding of the complex transport properties of the valence band. The calculated Hall mobilities show a general agreement with our experimental data for carbon doped p-GaAs samples in a range of degenerate hole densities. The calculated Hall factors show $r_H$=1.25~1.75 over all hole densities($2{\times}10^{17}{\sim}1{\times}10^{20}cm^{-3}$ considered in the calculations.

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References

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