• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.8
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• pp.957-964
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• 2011

This investigation presents a finite element method to obtain the transmission properties of bulk elastic waves in piezoelectric band gap structures(phonon crystals) for varying frequencies and modes. To this end, periodic boundary conditions are imposed on a three-dimensional model while both in-plane and out-of-plane modes are included. In particular, the mode decoupling characteristics between in-plane and out-of-plane modes are identified for each electric poling direction and the results are incorporated in the finite element modeling. Through numerical simulations, the proposed modeling method was found to be a useful, effective one for analyzing the wave characteristics of various types of piezoelectric phononic band gap structures.

• Korean Journal of Materials Research
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• v.25 no.2
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• pp.68-74
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• 2015

The porous $Mg_3Sb_2$ based compounds with 60~70% of relative density were prepared by powder compaction at room temperature and reactive liquid phase sintering at 1023 K for 4hrs. The stoichiometric $Mg_3Sb_2$ compounds were synthesized from elemental Sb and Mg powder in the mixing range of 61~63 at% Mg. The increased scattering effect due to the micro-pores reduced the mobility of the charge carrier and the phonon, which caused the electrical conductivity and the thermal conductivity to decrease, respectively. But the scattering effect was greater for the electrical conductivity than for the thermal conductivity. Excess Mg alloyed in the $Mg_3Sb_2$ compounds decreased the electrical conductivity, but had no effect on the thermal conductivity. On the other hand, the large increase of the Seebeck coefficient was the result of a decrease in the charge carrier density due to the excess Mg. Dimensionless figure of merit of the porous $Mg_3Sb_2$ compound reached a maximum value of 0.28 at 61 at% Mg. The obtained value was similar to that of $Mg_3Sb_2$ compounds having little pores.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.278-281
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• 2003

The p-CIn2Te4 single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the photoluminescence spectra of the as-grown CdIn2Te4 crystal and the various heat-treated crystals, the (Do, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the CdIn2Te4:Cd, while the (Ao, X) emission completely disappeared in the CdIn2Te4:Cd. However, the (Ao, X) emission in the photoluminescence spectrum of the CdIn2Te4:Te was the dominant intensity like an as-grown CdIn2Te4 crystal. These results indicated that the (Do, X) is associated with VTe acted as donor and that the (Ao, X) emission is related to VCd acted as acceptor, respectively. The p-CdIn2Te4 crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of (Do, Ao) emission and its TO phonon replicas is related to the interaction between donors such as VTe or Cdint, and accepters such as VCd or Teint. Also, the In in the CdIn2Te4 was confirmed not to form the native defects because it existed in the stable form of bonds.

• Composites Research
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• v.28 no.2
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• pp.70-74
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• 2015

In this paper, carbon nanotubes (CNTs) and micro glass bubbles (GBs) have been incorporated into a polyamide6 (PA6) matrix to impart thermoelectric properties. The spaces created in the matrix by GBs allows the formation of "segregated" CNT network. The tightly bound CNT network, if controlled properly, can serve as a conductive path for electron transport, while prohibiting phonon transport, which would provide an ideal configuration for thermoelectric applications. The CNTs and GBs were dispersed in a nylon-formic acid solution using horn sonication followed by coagulation in deionized water, and nanocomposite panels were fabricated using a hot press. The performance of nanocomposite panels was evaluated from thermal and electrical conductivities and Seebeck coefficient, and a thermoelectric figure of merit as high as 0.016 was achieved.

• Progress in Superconductivity
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• v.3 no.1
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• pp.13-16
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• 2001

We have measured the reflectivity of superconducting infinite-layer compounds $Sr_{0.9}$ $Ln_{0.1}$ Cu $O_2$ (Ln=La, Gd, Sm) with $T_{c}$ : 39 K using a Fourier-transform infrared spectrometer. We have identified the optical phonon modes from their infrared reflectivity and conductivity spectra and have proposed possible displacement patterns. The La- and the Gd-doped compounds exhibited only four ($2A_{2u}$ $+2E_{u}$) out of the five ($2A_{2u}$ $3E_{u}$) infrared-active phonons predicted by a group theoretical analysis whereas the Sm-doped compound exhibited all five modes. For the La-doped sample, we investigated the temperature dependence of the optical response functions in a wide temperature range of 7 - 300 K. In FIR region, the reflectivity is apparently enhanced below ~120 $cm^{-1}$ as temperature decreases across $T_{c}$. The value of $2$\Delta$/k_{B}$ $T_{c}$ is about 4.5, which is consistent with maximum gap value of d-wave $high- T_{c}$ cuprates.> c/ cuprates.uprates.s.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.47.1-47.1
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• 2011

We report on a direct measurement of two-dimensional chemical and electrical distribution on the surface of photovoltaic Cu(In,Ga)$Se_2$ thin-films using a nano-scale spectroscopic and electrical characterization, respectively. The Raman measurement reveals non-uniformed surface phonon vibration which comes from different compositional distribution and defects in the nature of polycrystalline thin-films. On the other hand, potential analysis by scanning Kelvin probe force microscopy shows a higher surface potential or a small work function on grain boundaries of the thin-films than on the grain surfaces. This demonstrates the grain boundary is positively charged and local built-in potential exist on grain boundary, which improve electron-hole separation on grain boundary. Local electrical transport measurements with scanning probe microscopy on the thin-films indicates that as external bias is increases, local current is started to flow from grain boundary and saturated over 0.3 V external bias. This accounts for carrier behavior in the vicinity of grain boundary with regard to defect states. We suggest that electron-hole separation at the grain boundary as well as chemical and electrical distribution of polycrystalline Cu(In,Ga)$Se_2$ thin-films.

• Journal of Powder Materials
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• v.23 no.4
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• pp.263-269
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• 2016

Graphene oxide (GO) powder processed by Hummer's method is mixed with p-type $Bi_2Te_3$ based thermoelectric materials by a high-energy ball milling process. The synthesized GO-dispersed p-type $Bi_2Te_3$ composite powder has a composition of $Bi_{0.5}Sb_{1.5}Te_3$ (BSbT), and the powder is consolidated into composites with different contents of GO powder by using the spark plasma sintering (SPS) process. It is found that the addition of GO powder significantly decreases the thermal conductivity of the pure BSbT material through active phonon scattering at the newly formed interfaces. In addition, the electrical properties of the GO/BSbT composites are degraded by the addition of GO powder except in the case of the 0.1 wt% GO/BSbT composite. It is found that defects on the surface of GO powder hinder the electrical transport properties. As a result, the maximum thermoelectric performance (ZT value of 0.91) is achieved from the 0.1% GO/BSbT composite at 398 K. These results indicate that introducing GO powder into thermoelectric materials is a promising method to achieve enhanced thermoelectric performance due to the reduction in thermal conductivity.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.379-385
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• 2006

Single crystal of p-$CdIn_{2}Te_{4}$ was grown in a three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by x-ray diffraction and photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_{2}Te_{4}$ crystal and the various heat-treated crystals, the ($D^{o}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Cd, while the ($A^{o}$, X) emission completely disappeared in the $CdIn_{2}Te_{4}$:Cd. However, the ($A^{o}$, X) emission in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Te was the dominant intensity like in the as-grown $CdIn_{2}Te_{4}$ crystal. These results indicated that the ($D^{o}$, X) is associated with $V_{Te}$ which acted as donor and that the ($A^{o}$, X) emission is related to $V_{Cd}$ which acted as acceptor, respectively. The p-$CdIn_{2}Te_{4}$ crystal was obviously found to be converted into n-type after annealing in Cd atmosphere. The origin of ($D^{o},{\;}A^{o}$) emission and its to phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and acceptors such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_{2}Te_{4}$ was confirmed not to form the native defects because it existed in a stable bonding form.

• Journal of the Korean Magnetics Society
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• v.25 no.6
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• pp.185-188
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• 2015

We have investigated nuclear magnetic resonance of $^{23}Na$ nucleus in $NaMgCl_3$ single crystal in the temperature range 200 K~410 K using FT-NMR spectrometer. The spin-lattice relaxation times $T_1$ of $^{23}Na$ nucleus residing at cubic symmetry in the host crystal was measured as a function of temperature. The $T_1$ of $^{23}Na$ nucleus decreased with increasing temperature. The nuclear spin-lattice relaxation rate $1/T_1$ of $^{23}Na$ in $NaMgCl_3$ single crystal was proportional to the temperature T. This behavior is explained with the characteristic feature of the direct process between the nuclear spins and single phonon, $1/T_1$ being proportional to the absolute temperature. The activation energy calculated was $E_a=4.82J/mol$.

• Journal of the Optical Society of Korea
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• v.12 no.3
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• pp.200-204
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• 2008

Coherent tunable terahertz generation was demonstrated in periodically poled stoichiometric lithium tantalate crystal via difference frequency generation of femtosecond laser pulses. Simultaneous forward and backward terahertz radiations were obtained around 1.35 and 0.63 THz, respectively at low temperature. By cooling the crystal to reduce losses caused by phonon absorptions, the generated THz bandwidth was as narrow as 23GHz at the center frequency of 0.63 THz. The measurement result of temperature-dependent showed gradual intensity increase of the generated terahertz pulse and red shift of the center frequency as the temperature decrease from 291 to 143 K, but insignificant reduction of the spectral bandwidth. Furthermore, the stoichiometric crystal was very suitable for the suppression of THz loss at low temperature compared to the congruent $LiNbO_3$ crystal.