• Journal of the Korean institute of surface engineering
• /
• v.29 no.6
• /
• pp.809-815
• /
• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• Korean Chemical Engineering Research
• /
• v.46 no.6
• /
• pp.1135-1141
• /
• 2008

The $La_{1-x}(Ca\;or\;Sr)xCrO_3$(x=0 and 0.25) interconnect materials for high temperature electrolysis of steam were investigated in views of sinterability and electrical conductivity. $LaCrO_3$, $La_{0.75}Ca_{0.25}CrO_3$ (LCC), and $La_{0.75}Sr_{0.25}CrO_3$ (LSC) powders were synthesized by coprecipitation method. Crystal structure was confirmed by X-ray diffraction (XRD). The sintering characteristics were analyzed by relative density and scanning electron microscopy. The electrical conductivity was measured by a DC four probe method. From the analyses of relative densities, it was found that the doped $LaCrO_3$ showed better sinterability than $LaCrO_3$ and the those sinterability increased with decrease of those particle sizes. The XRD results at different sintering temperatures for LCC and LSC revealed that the sinterability is closely related to the second phase transformation, that is, the second phase melting above $1,300^{\circ}C$ for LCC and $1,400^{\circ}C$ for LSC significantly promotes the sinterability. In case of electrical conductivities of LCC and LSC, which had a similar relative density, LCC showed better electrical conductivity than LSC.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.35 no.3
• /
• pp.221-228
• /
• 2011

The large-area crystallization of amorphous silicon thin films on glass backplanes is one of the key technologies in the manufacture of flat-panel displays. Joule-heating induced crystallization (JIC) is a recently introduced crystallization technology. It is considered a highly promising technique for fabricating OLEDs, because the film of amorphous silicon on glass can be crystallized in tens of microseconds, minimizing thermal and structural damage to the glass. In this study, we theoretically and experimentally investigated the temperature variation during the phase transformation. The critical temperatures for crystallization were determined for both solid-solid and solid-liquidsolid transitions, by carrying out in-situ temperature measurements and numerical analysis of the JIC.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.4
• /
• pp.172-177
• /
• 2002

The CuZnAl alloys have some advantages against other shape memory alloys, such as the widely variable transformation temperature, the low cost and easy fabrication. The alloys have been produced mostly by metallurgical methods. Thereby a tendency to large grain sizes is observed, which causes brittle properties of the materials. In order to avoid these deficiencies a special powder metallurgical process, SPS(spark plasma sintering), is applied in the present investigation. The starting materials were the pure (99.9 %) Cu, Zn and Al element powders with different particle size. The relatively fine grained and homogeneous Cu-24.78Zn-9.11Al (at.%) and Cu-13.22Zn-17.24Al (at.%) shape memory alloys were obtained using the powders with size of 75-150 $\mu$m. The average grain size is about 70 $\mu$m and the phases at room temperature are the austenitic and martensitic phase respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.3
• /
• pp.229-236
• /
• 1998

Ferroelectric $Sr_xBi_yTa_2O_{9+\alpha}$/(0.7$\leqSr\leq1.0,\; 2.0\leqBi\leq2.6)$ solutions were prepared by MOD (Metalorganic Deposition) process. These solutions were made into thin films with thickness ranging from 1500~2000${\AA}$ by spin coating. The phase transformation of the SBT thin films by variation of annealing temperature and annealing time were observed using high temperature XRD and SEM. The crystallization and grain growth of SBT thin film were accomplished at $800^{\circ}C$ for 30 minutes after deposition of Pt top electrode by sputtering to prevent electrical breakdown. Ferroelectric properties of the SBT thin films were measured in the range of $\pm$3V\; and\; \pm5V$. The specimen with composition ratio of Sr/Bi/Ta (0.8/2.4/2.0) has the excellent ferroelectric properties ; $2P_r = 10.5,\; 13.2\muC/cm^2 \;at\; \pm3V\; and\; \pm5V$ respectively. Observing the post annealed Pt/SBT/Pt interface by SEM, it was found that Pt electrode sputtered on to the SBT thin film penetrated into the hollow on the SBT thin film, thus decreasing the effective insulation thickness. The effective insulation thickness recovered by post annealing, and this was confirmed by leakage current density measurement.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2000.06a
• /
• pp.1311-1320
• /
• 2000

In this study, shape memory alloy(SMA) wires and piezoceramic actuators(PZT's) are employed in order to generate higher modes on the beam deformations. Compressive force is generated and applied to the beam by the pre-strained SMA wires attached at both ends of the beam. PZT's apply concentrated moments to several locations on the beam. Combinations of the compressive force and concentrated moments are investigated in order to understand the higher-mode deformation of beams. The first desired mode shape is obtained by controlling the temperature of the SMA wires. The first and third mode shapes are performed experimentally by heating SMA wires up to phase transformation temperature. The adaptive wing is defined as a wing whose shape parameters such as the camber, wing twist and thickness can be varied in order to change the wing shape for various flight conditions. In this research, control of the camber has been studied. The wing model consists of three plates and many ribs. Two of the plates are placed parallel to each other and they are clamped at one edge. Third plate connects the other edges of the parallel plates together. Each rib is made of SMA wire and connected to the parallel plates. It generates concentrated force and applies to the plates in oblique directions. The PZT's are bonded onto the plates and exert concentrated moments upon the plate at several locations. The object of this research is to generate various shape of wing by combining the concentrated forces and moments.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.129-129
• /
• 2018

Hard coating application is effective way of cutting tool for hard-to-machine materials such as Inconel, Ti and composite materials focused on high-tech industries which are widely employed in aerospace, automobile and the medical device industry also Information Technology. In cutting tool for hard-to-machine materials, high hardness is one of necessary condition along with high temperature stability and wear resistance. In recent years, high-entropy alloys (HEAs) which consist of five or more principal elements having an equi-atomic percentage were reported by Yeh. The main features of novel HEAs reveal thermodynamically stable, high strength, corrosion resistance and wear resistance by four characteristic features called high entropy, sluggish diffusion, several-lattice distortion and cocktail effect. It can be possible to significantly extend the field of application such as cutting tool for difficult-to-machine materials in extreme conditions. Base on this understanding, surface coatings using HEAs more recently have been developed with considerable interest due to their useful properties such as high hardness and phase transformation stability of high temperature. In present study, the nanocomposite coating layers with high hardness on WC substrate are investigated using high entropy alloy target made a powder metallurgy. Among the many surface coating methods, reactive magnetron sputtering is considered to be a proper process because of homogeneity of microstructure, improvement of productivity and simplicity of independent control for several critical deposition parameters. The N2 is applied to reactive gas to make nitride system with transition metals which is much harder than only alloy systems. The acceleration voltage from 100W to 300W is controlled by direct current power with various deposition times. The coating layers are systemically investigated by structural identification (XRD), evaluation of microstructure (FE-SEM, TEM) and mechanical properties (Nano-indenter).

• Journal of the Korean Ceramic Society
• /
• v.30 no.12
• /
• pp.1045-1053
• /
• 1993

Alumina hydrates were prepared by the neutralization of AlCl3.6H2O solution with NH3 gas diluted with N2 gas. The values of pH in reaction solution influenced the formation of alumina hydrates minerals. Amorphous alumina hydrates, for example, were formed at ${\gamma}$-Al2O3longrightarrow$\delta$-Al2O3longrightarrow$\theta$-Al2O3longrightarrow$\alpha$-Al2O3. (2) Bayeritelongrightarrowamorphouslongrightarrow${\gamma}$-Al2O3longrightarrow$\delta$-Al2O3longrightarrowη-Al2O3longrightarrow$\theta$-Al2O3longrightarrow$\alpha$-Al2O3. On the other hand, the shape of alumina hydrates whichw ere prepared by the reacton of Al2(SO4)3.16H2O solution and NH3 gas was spherical, the progress of its phase transformation with increasing temperature was amorphouslongrightarrow${\gamma}$-Al2O3longrightarrow$\alpha$Al2O3 in sequence.

• Korean Journal of Optics and Photonics
• /
• v.18 no.2
• /
• pp.171-177
• /
• 2007

We prepared $TiO_2$ thin films by electron-beam evaporation at various oxygen pressures, and investigated their optical and structural properties as a function of the annealing temperature. The physical properties of the $TiO_2$ thin films depend upon the injection oxygen content. With the increased injection of oxygen, the phase transformation temperature and the transmittance of $TiO_2$ thin films in the range of visible wavelength were increased. For low injection of oxygen, the absorption edges of $TiO_2$ thin films were more red-shifted when annealed at temperatures from $700^{\circ}C$ to $1100^{\circ}C$.

• Korean Journal of Materials Research
• /
• v.15 no.7
• /
• pp.439-443
• /
• 2005

The oxidation behavior and the thermal stability of nanocrystalline Al-25Ti-8Mn intermetallic compound were investigated. $Al_3Ti$ intermetallic compound, which has a potential for high temperature structural material, was fabricated by mechanical alloying(MA) with $8at.\%$ Mn to enhance the thermal stability and ductility. And Al-25Ti-8Mn intermetallic compound was sintered by spark plasma sintering(SPS) at $700^{\circ}C$. After sintering process, cubic $Ll_2$ structure was maintained without phase transformation and the grain size was about 50nm. To investigate the oxidation behavior of the specimens, thermal gravimetric analysis(TGA) was performed at 700, 800, 900, and $1000^{\circ}C$ for 24 h in $O_2$. As the temperature increased from $700^{\circ}C\;to\;900^{\circ}C$ the weight gain of specimens increased. However at $1000^{\circ}C$, unlike the oxidation behavior of $700^{\circ}C\;to\;900^{\circ}C$, the weight gain of specimen decreased drastically and the transition from linear rate region to parabolic rate region occurred rapidly due to the dense $\alpha-Al_2O_3$.