• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.136-136
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• 2010

$Ge_2Sb_2Te_5$ (GST)는 광학 스토리지 및 PRAM(Phase-change Random Access Memory)에 적용 가능한 대표적인 상변화 물질이며 상변화 거동에 대한 다양한 연구가 진행되고 있다. 차세대 비휘발성 메모리로 각광을 받고 있는 PRAM의 경우 저전력 그러나 향후 고집적, 고성능 PRAM 소자구현을 위해서는 Reset 전류 감소를 통한 소비 전력 감소, 인접 셀간의 'cross talking'을 방지할 수 있는 열적 안정성 개선 등의 문제점들을 해결해야 한다. GST 물질의 전기적, 열적 특성을 조절하여 이러한 문제를 해결하기 위하여 GST 물질에 이종의 원소를 첨가하는 연구가 활발히 진행되고 있으며, 특히 질소 첨가에 의해 결정 성장 억제를 통한 결정화 온도 증가, 결정질의 저항 증가 등의 보고가 있었다. 본 연구에서는 질소를 첨가한 N-doped $Ge_2Sb_2Te_5$ (NGST) 박막의 상변화 거동을 규명하고 GST 박막과 비교하여 첨가된 질소의 영향을 분석하고자 한다. D.C Magnetron sputtering 방법으로 증착된 GST와 NGST 박막을 등온으로 유지하여 각 온도별로 열처리 시간 증가에 따른 비저항을 실시간으로 측정하여 GST와 NGST 박막의 상분율을 계산하고 Kissinger 모델을 이용하여 effective activation energy ($E_a$)를 구하였다. GST와 NGST 박막의 $E_a$는 각각 $2.08\;{\pm}\;0.11\;eV$와 $2.66\;{\pm}\;0.12\;eV$로 계산되었다. 따라서 첨가된 질소에 의해 NGST 박막의 결정화를 위하여 GST 박막의 경우보다 더 큰 활성화 에너지가 필요하다.

• Proceedings of the Korea Water Resources Association Conference
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• 2022.05a
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• pp.348-348
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• 2022

미래에 대한 기후는 과거와 비교하여 변동성이 더 크고 불확실성 또한 더 크기 때문에 미래의 기후변화를 예측하기 위해서는 기후변화의 절대적인 크기뿐 아니라 불확실한 정도도 함께 고려되어야 한다. 본 연구에서는 CMIP6(Coupled Model Intercomparison Project Phase 6) DB에서 제공된 일 단위 18개의 GCMs(General Circulation Models)의 결과를 분석하였으며 또한 3개의SSP(Shared Socioeconomic Pathway)시나리오와 3개의 미래 구간에 대하여 100개의 앙상블을 각각 생성하였다. 불확실성을 초래하는 원인을 3가지로 구분하고, 각각의 원인에 대한 불확실성의 정도를 앙상블 시나리오에 반영하고자 한다. 현재 기간 및 미래 기간에 대해 100개의 20년 시계열 날씨변수 앙상블을 생성하여 LSTM(Long short-term memory)의 입력자료로 사용하여 댐유입량, 저수위, 방류량을 산정하였다. 댐 유입량 및 방류량의 예측성능을 향상시키기 위해 Input predictor의 종류를 선정하는 방법과 그 변수들의 lag time을 결정하는 방법, 입력자료들을 재구성하는 방법, 하이퍼 매개변수를 효율적으로 최적화하는 방법, 목적함수 설정 방법들을 제시하여 댐 유입량 및 방류량의 예측을 크게 향상시키고자 하였다. 본 연구에서 예측된 미래의 댐유입량 및 방류량 정보는 홍수 또는 가뭄 등 다양한 수자원 관련 문제의 전략을 수립하는 데 있어서 적절한 도움이 될 것이다.

• Korean Journal of Optics and Photonics
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• v.18 no.5
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• pp.351-361
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• 2007

The samples composed of a GST thin film and the protective layers of $ZnS-SiO_2$ or $Al_2O_3$ coated on c-Si substrate were prepared by using the magnetron sputtering method. Samples of three different structures were prepared, that is, i) the GST single film on c-Si substrate, ii) the GST film sandwiched by the protective $ZnS-SiO_2$ layers on c-Si substrate, and iii) the GST film sandwiched by $Al_2O_3$ protective layers on c-Si substrate. The ellipsometric constants in the temperature range from room temperature to $700^{\circ}C$ were obtained by using the in-situ ellipsometer equipped with a conventional heating chamber. The measured ellipsometric constants show strong variations versus temperature. The variation of ellipsometric constants at the temperature region higher than $300^{\circ}C$ shows different behaviors as the ambient medium is changed from in air to in vacuum or the protective layers are changed from $ZnS-SiO_2$ to $Al_2O_3$. Since the long heating time of 1-2 hours is believed to be the origin of the high temperature variation of ellipsometric constants upon the heating environment and the protective layers, a PRAM (Phase-Change Random Access Memory) recorder is introduced to reduce the heating time drastically. By using the PRAM recorder, the GST samples are heated up to $700^{\circ}C$ decomposed preventing its partial evaporation or chemical reactions with adjacent protective layers. The surface image obtained by SEM and the surface micro-roughness verified by AFM also confirmed that samples prepared by the PRAM recorder have smoother surface than the samples prepared by using the conventional heater.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.128-133
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• 2008

Phase-change random access memory (PRAM) chip cell phase of amorphous state is rapidly changed to crystal state above 160 Celsius degree within several seconds during Infrared (IR) reflow. Thus, on-board programming method is considered for PRAM chip programming. We demonstrated the functional 512Mb PRAM with 90nm technology using several novel core circuits, such as metal-2 line based global row decoding scheme, PN-diode cells based BL discharge (BLDIS) scheme, and PMOS switch based column decoding scheme. The reverse-state standby current of each PRAM cell is near 10 pA range. The total leak current of 512Mb PRAM chip in standby mode on discharging state can be more than 5 mA. Thus in the proposed BLDIS control, all bitlines (BLs) are in floating state in standby mode, then in active mode, the activated BLs are discharged to low level in the early timing of the active period by the short pulse BLDIS control timing operation. In the conventional sense amplifier, the simultaneous switching activation timing operation invokes the large coupling noise between the VSAREF node and the inner amplification nodes of the sense amplifiers. The coupling noise at VSAREF degrades the sensing voltage margin of the conventional sense amplifier. The merit of the proposed sense amplifier is almost removing the coupling noise at VSAREF from sharing with other sense amplifiers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.203-206
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• 2004

For the realization of PRAM, $Ge_2Sb_2Te_5$ (GST) has been employed for the phase transition between the crystal and amorphous states by electrical joule heating. Although there has been a vast amount of results concerning the GST in material aspect for the laser-induced optical storage disc applications, the process-related issues of GST for the PRAM applications have not been reported. In this work, the etching behaviors of GST were investigated when the processing conditions were varied in the high-density helicon plasma. The etching parameters of RF main power, RF bias power, and chamber pressure were fixed at 600 W, 150 W, and 5 mTorr, respectively. For the etching processes, gas mixtures of $Ar/Cl_2$, $Ar/CF_4$, and $Ar/CHF_3$ were employed, in which the etching rates and etching selectivities of GST thin film in given gas mixtures were evaluated. From obtained results, it is found that we can arbitrarily design the etching process according to given cell structures and material combinations for PRAM cell fabrications.

• Korean Journal of Pharmacognosy
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• v.17 no.3
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• pp.248-254
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• 1986

Effects of vinblastine(VLB) and vincristine(VCR) on cell-mediated immunity(CMI) were studied with the microcytotoxicity test(MCT) after normal or pre-sensitized Balb/c mice had been treated in vivo with a combination of two different doses of VLB or VCR(single dose of 20% and 60% $LD_{50}$, i.p.) at different times (from day -6 to day +4) plus allo-transplantation antigen(allo-TA, cells from C3H mice at day 0). The results were that $LD_{50}$ of VLB for female Balb/c mouse was 7.3mg/kg body weight (i.p.) and $LD_{50}$ of VCR was 4.3mg/kg body weight and that VLB and VCR acted as immunosuppressive agents on the primary CMI when administered after allo-TA(antigen-drug-phase), but showed no effect when administered prior to allo-TA(drug-antigen-phase). Change of doses of VLB and VCR(20% $LD_{50}$, 60% $LD_{50}$) caused quantitative or qualitative variations in the immunomodulating effects of these two drugs. Neither VLB nor VCR had any immunomodulating effect on the secondary CMI. Lastly, the results support that the four parameters (type of drug, sensitization status, time of drug treatment in relation to antigen injection, and drug dosis) are significant for the effects of the VLB and VCR on the CMI, and that VLB and VCR may inhibit the proliferation of antigen-stimulated T effector lymphocytes but not memory-cytotoxic T lymphocytes.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1438-1439
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• 2006

$Ge_{2}Sb_{2}Te_5$(GST) thin film at present is a promising candidate for a phase change random access memory (PCRAM) based on the difference in resistivity between the crystalline and amorphous phase. PCRAM is an easy to manufacture, low cost storage technology with a high storage density. Therefore today several major chip in manufacturers are investigating this data storage technique. Recently, A. Pirovano et al. showed that PCRAM can be safely scaled down to the 65 nm technology node. G. T Jeonget al. suggested that physical limit of PRAM scaling will be around 10 nm node. Etching process of GST thin ra films below 100 nm range becomes more challenging. However, not much information is available in this area. In this work, we report on a parametric study of ICP etching of GST thin films in $Cl_2$/Ar chemistry. The etching characteristics of $Ge_{2}Sb_{2}Te_5$ thin films were investigated using an inductively coupled plasma (ICP) of $Cl_2$/Ar gas mixture. The etch rate of the GST films increased with increasing $Cl_2$ flow rate, source and bias powers, and pressure. The selectivity of GST over the $SiO_2$ films was higher than 10:1. X-ray photoelectron spectroscopy(XPS) was performed to examine the chemical species present in the etched surface of GST thin films. XPS results showed that the etch rate-determining element among the Ge, Sb, and Te was Te in the $Cl_2$/Ar plasma.

• Journal of Institute of Control, Robotics and Systems
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• v.20 no.12
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• pp.1284-1289
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• 2014

In this Paper, outdoor position estimation system was implemented using GPS (Global Positioning System) and INS (Inertial Navigation System). GPS position information has lots of errors by interference from obstacles and weather, the surrounding environment. To reduce these errors, multiple GPS system is used. Also, the Discrete Wavelet Transforms was applied to INS data for compensation of its error. In this paper, position estimation of the mobile robot in the straight line is conducted by EKF (Extended Kalman Filter). However, curve running position estimation is less accurate than straight line due to phase change in rotation. The curve is recognized through the rate of change in heading angle and the position estimation precision of the initial curve was improved by UPF (Unscented Particle Filter). In the case of UPF, if the number of particle is so many that big memory gets size is needed and processing speed becomes late. So, it only used the position estimation in the initial curve. Thereafter, the position of mobile robot in curve is estimated through switching from UPF to EKF again. Through the experiments, we verify the superiority of the system and make a conclusion.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.192-195
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• 2011

The electro-deposition of compound semiconductors has been attracting more attention because of its ability to rapidly deposit nanostructured materials and thin films with controlled morphology, dimensions, and crystallinity in a costeffective manner (1). In particular, low band-gap $A_2B_3$-type chalcogenides, such as $Sb_2Te_3$ and $Bi_2Te_3$, have been extensively studied because of their potential applications in thermoelectric power generator and cooler and phase change memory. Thermoelectric $Sb_xTe_y$ films were potentiostatically electrodeposited in aqueous nitric acid electrolyte solutions containing different ratios of $TeO_2$ to $Sb_2O_3$. The stoichiometric $Sb_xTe_y$ films were obtained at an applied voltage of -0.15V vs. SCE using a solution consisting of 2.4 mM $TeO_2$, 0.8 mM $Sb_2O_3$, 33 mM tartaric acid, and 1M $HNO_3$. The stoichiometric $Sb_xTe_y$ films had the rhombohedral structure with a preferred orientation along the [015] direction. The films featured hole concentration and mobility of $5.8{\times}10^{18}/cm^3$ and $54.8\;cm^2/V{\cdot}s$, respectively. More negative applied potential yielded more Sb content in the deposited $Sb_xTe_y$ films. In addition, the hole concentration and mobility decreased with more negative deposition potential and finally showed insulating property, possibly due to more defect formation. The Seebeck coefficient of as-deposited $Sb_2Te_3$ thin film deposited at -0.15V vs. SCE at room temperature was approximately 118 ${\mu}V/K$ at room temperature, which is similar to bulk counterparts.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.