• Journal of the Korean Chemical Society
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• v.44 no.1
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• pp.1-3
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• 2000

• Journal of the Korean Chemical Society
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• v.45 no.3
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• pp.213-218
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• 2001

The reaction of peroxo vanadium(V) complexes, $VO(O_2)_2(pic)^{2-}$, $VO(O_2)(nta)^{2-}$, and $VO(O_2)(dipic)^-$ with thiolato-cobalt(III), $(en)_2Co(SCH_2CH_2NH_2)^{2+}$ resulted in an oxygen-atom transfer in aqueous solutions. Rate constants ($M^{-1}S^{-1}$) for these reactions were (35$\pm$1), $(4.8{\pm}0.4){\times}10^{-2}$ , and $(8.6{\pm}0.5){\times}10^{-4}$, respectively. The coordinate peroxide was activated in the oxygen-atom-transfer reaction of $VO(O_2)_2(pic)^{2-}$, but it is not the case for VO(O$_2$) $(nta)^{2-}$ and VO(O$_2$) $(dipic)^-$. In this paper, we proposed that the direct attack of an electrophilic peroxide to a nucleophilic substrate occurs in the oxygen-atom transfer pathway of peroxo vanadium(V) complexes.

• Bulletin of the Korean Chemical Society
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• v.24 no.7
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• pp.1005-1008
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• 2003

• Journal of Powder Materials
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• v.22 no.6
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• pp.396-402
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• 2015

The organic binder-free paste for dye-sensitized solar cell (DSSC) has been investigated using peroxo titanium complex. The crystal structure of $TiO_2$ nanoparticles, morphology of $TiO_2$ film and electrical properties are analyzed by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Electrochemical Impedance Spectra (EIS), and solar simulator. The synthesized $TiO_2$ nanopowders by the peroxo titanium complex at 150, 300, $400^{\circ}C$, and $450^{\circ}C$ have anatase phase and average crystal sizes are calculated to be 4.2, 13.7, 16.9, and 20.9 nm, respectively. The DSSC prepared by the peroxo titanium complex binder have higher $V_{oc}$ and lower $J_{sc}$ values than that of the organic binder. It can be attributed to improvement of sintering properties of $TCO/TiO_2$ and $TiO_2/TiO_2$ interface and to formation of agglomerate by the nanoparticles. As a result, we have investigated the organic binder-free paste and 3.178% conversion efficiency of the DSSC at $450^{\circ}C$.

• Journal of the Korean Chemical Society
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• v.34 no.6
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• pp.569-581
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• 1990

It is generated in DMF by activated catalysts of superoxo cobalt(III) complex, such as [Co(III)(Schiff base)(L)]O$_2$ (Schiff base; SED, SOPD and o-BSDT, L; DMF and Py) which mole ratio of oxygen to metal is 1:1 that oxidation major product of 2,6-di-tert-butylphenol by homogeneous oxidatve catalysts of oxygen adducted tetradentate Schiff base cobalt(III) is 2,6-ditert-butylbenzoquinone (BQ). And oxidation product of 3,3',5,5'-tetra-tert-butyldiphenoquinone (DPQ) is generated by activated catalysts such as $\mu$-peroxo cobalt(III) complex; $[Co(III)(SND)(L)]_2$$O_2$ (L; DMF and Py) which mole ratio of oxygen to metal is 1:2. It is difficult to identify these homogeneous activated catalysts such as superoxo and $\mu$-peroxo cobalt(III) complexes in DMF and DMSO solvents. But we can identify by P.V.T method of the oxygen absorption in pyridine solvent and by the reduction process occurred to four steps including prewave of O$_2$- in 1:1 oxygen adducted superoxo cobalt(III) complexes and three steps not including prewave of O$_2$- in 1:2 oxygen adducted $\mu$-peroxo cobalt(III) complexes by the cyclic voltammetry with glassy carbon electrode in 0.1 M TEAP as supporting electrolyte solutidn.

• Bulletin of the Korean Chemical Society
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• v.21 no.4
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• pp.446-448
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.111-111
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• 2003

The peroxo titanic acid solution was successfully prepared using titanium trichloride as a precursor. The basic properties of the TiO2 film prepared by the solution were investigated in view of phase change, bandgap energy, crystalline size etc. The film displayed amorphous TiO$_2$ at room temperature, anatase above 281$^{\circ}C$ and a mixture of anatase and rutile at 99$0^{\circ}C$, The crystalline size increases with annealing temperatures, while the bandgap energies decrease due to the quantum size effect and the formation of rutile phase which has low bandgap energy. As a result of TG-DTA, it was found that annealing treatment at 99$0^{\circ}C$ for 2h formed a mixtures of anatase and rutile through three steps: (1) the removal of physically adsorbed water (2) the decomposition of peroxo group (3) amorphous-anatase or anatase-rutile phase transformation.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.577-582
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• 2017

Self-cleaning and photocatalytic $TiO_2$ thin films were prepared by a facile sol-gel method followed by spin coating using peroxo titanic acid as a precursor. The as-prepared thin films were heated at low temperature($110^{\circ}C$) and high temperature ($400^{\circ}C$). Thin films were characterized by X-ray diffraction(XRD), Field-emission scanning electron microscopy(FESEM), UV-Visible spectroscopy and water contact angle measurement. XRD analysis confirms the low crystallinity of thin films prepared at low temperature, while crystalline anatase phase was found the for high temperature thin film. The photocatalytic activity of thin films was studied by the photocatalytic degradation of methylene blue dye solution. Self-cleaning and photocatalytic performance of both low and high temperature thin films were compared.

• Korean Journal of Materials Research
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• v.32 no.9
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• pp.384-390
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• 2022

A spin coating process for RRAM, which is a TiN/TiO₂/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (V_O), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti³⁺ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 10⁴. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO₂/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.152-162
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• 2024

In this study, we introduce a novel TiN/Ag embedded TiO₂/FTO resistive random-access memory (RRAM) device. This distinctive device was fabricated using an environmentally sustainable, solution-based thin film manufacturing process. Utilizing the peroxo titanium complex (PTC) method, we successfully incorporated Ag precursors into the device architecture, markedly enhancing its performance. This innovative approach effectively mitigates the random filament formation typically observed in RRAM devices, and leverages the seed effect to guide filament growth. As a result, the device demonstrates switching behavior at substantially reduced voltage and current levels, heralding a new era of low-power RRAM operation. The changes occurring within the insulator depending on Ag contents were confirmed by X-ray photoelectron spectroscopy (XPS) analysis. Additionally, we confirmed the correlation between Ag and oxygen vacancies (V_o). The current-voltage (I-V) curves obtained suggest that as the Ag content increases there is a change in the operating mechanism, from the space charge limited conduction (SCLC) model to ionic conduction mechanism. We propose a new filament model based on changes in filament configuration and the change in conduction mechanisms. Further, we propose a novel filament model that encapsulates this shift in conduction behavior. This model illustrates how introducing Ag alters the filament configuration within the device, leading to a more efficient and controlled resistive switching process.