• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.2222-2227
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• 2007

Newly structured metal-supported solid oxide fuel cell was fabricated and characterized by impedance analysis and galvanodynamic experiment. Using a cermet adhesive, thin ceramic layer composed of anode(Ni/YSZ) and electrolyte(YSZ) was joined with STS430 metal support of which flow channel was fabricated. $La_{0.8}Sr_{0.2}Co_{0.4}Mn_{0.6}O_3$ perovskite oxide was used as cathode material. Single cell performance was increased and saturated at operating time to 300hours at 800$^{\circ}C$ because of cathode sintering effect. The sintering effect was reinvestigated by half cell test and exchange current density was measured as 0.005A/$cm^2$. Maximum power density of the cell was 0.09W/$cm^2$ at 800$^{\circ}C$. Numerical analysis was carried out to classify main factors influencing the single cell performances. Compared to experimental IV curve, simulated curve based on experimental parameters such as exchange current density was in good agreement.

• 한국세라믹학회지
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• 제52권5호
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• pp.308-314
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• 2015

The electrochemical performance and Cr poisoning behavior of $La_{1-x}Ba_xCo_{0.9}Fe_{0.1}O_{3-{\delta}}$ (LBCF, x = 0.3, 0.4, 0.5) and $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-{\delta}}$ (LSCF) cathodes were investigated for solid oxide fuel cells (SOFCs). The polarization resistance of the LBCF/GDC/LBCF symmetrical cell was found to decrease with increasing Ba content (x value). This phenomenon might be associated with the high oxygen vacancy concentration in the LBCF sample, with x = 0.5. In addition, there was no chromium poisoning in the LBCF cathode. On the other hand, the polarization resistance of the LSCF cathode was found to significantly increase after exposure to gaseous chromium species; it appears that this result stemmed from the formation of $SrCrO_4$ phase. Therefore, it can be expected that LBCF can be a durable potential cathode material for intermediate-temperature solid oxide fuel cells (IT-SOFC).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.122-122
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• 2000

Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.

• 한국세라믹학회지
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• 제17권4호
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• pp.179-187
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• 1980

Perovskite-type oxide catalysts in the $\textrm{LaMnO}_3$ family were prepared by both freeze drying and precipitation technique, and their catalytic activities with respect to the oxidation of CO with $O_2$ were measured in the composite gases. Freeze drying is a new technique for the prevention of migration of the solutes during drying. Therefore, the corrugated cordierite monolith fabricated with the Ø 1mm stainless steel bar was directly impregnated with nitrate solutions containing the appropriate cations, freeze dried and calcined. Precipitation was done by using $\textrm{(NH_4)}_2\textrm{CO}_3$ but the precipitated catalysts gave lower catalytic than the freeze dried samples due to, in part, relatively high calcining temperature. In this study, freeze dried composition had high catalytic activity, and their apparent activation energy for oxidation of CO was calculated by the rate plots using the data where the percent conversion of CO was less than 20%.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.121-121
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• 2003

NiO thin films are very attractive for use as an antiferromagnetic layer, p-type transparent conducting films, in electrochromic devices and functional sensor layer for chemical sensors, due to their excellent chemical stability, as well as optical, electrical and magnetic properties. In addition, (100)- and (111)-oriented NiO films can be used as buffer layers on which to deposit other oriented oxide films, such as c-axis-oriented perovskite-type ferromagnetic films and superconducting films, because of the similarity in symmetry of oxygen ion lattice and lattice constants between the NiO films and the oriented oxide films. Thus, controlling the crystallographic orientation and surface roughness of the NiO films for a buffer layer are very important.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.621-624
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• 2002

Lanthanum nickel oxide$(LaNiO_3)$ powders have been prepared via a mechanochemical processing without any additional heat treatment. When a mixed lanthanum and nickel oxide was mechanically activated for 6 hours with 450 rpm, a stable and single phase perovskite powder was successfully synthesized and its crystallite size of about 90 nm is calculated by using the Scherrer equation.

• 한국세라믹학회지
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• 제28권11호
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• pp.859-864
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• 1991

High quality lead titanate thin films were fabricated by spin coating on a silicon substrate. The resulting dried gel layers were uniform in thickness through 2$\times$2 $\textrm{cm}^2$ area, and polycrystalline perovskite structures developed almost crack free with a heat treatment above 50$0^{\circ}C$ in films with thickness above 360 nm. Metastable pyrochlore structures were observed in films with thickness of 160 nm when heat treated at 500 and $600^{\circ}C$, but these structure did not appear in films with thickness of 360 nm. The thickness dependence in crystal structure of films was studied. by varying the substrate condition and analyzing the interface between the film and substrate. In native oxide films on silicon stbstrates, amorphous dried gel layers were heterogeneously nucleated. Metastable cubic pyrochlore structure could be crystallized in amorphous native oxide.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.114-117
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• 2001

$(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$(x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their structural and dielectric properties were investigated with variation of composition ratio and sintering temperature. As a result of the differential thermal analysis(DTA), exothermic peak was observed at around $1020^{\circ}C$ due to the formation of the polycrystalline perovskite phase. BSCT(50/40/10) specimen sintered at $1500^{\circ}C$ showed the highest average grain size(18.25$[{\mu}m]$). Curie temperature and dielectric constant at room temperature decreased with increasing amount of Ca. BSCT(50/40/10) specimen sintered at $1450^{\circ}C$ showed a good dielectric constant, K, (=4324) and dielectric loss, $tan{\delta}$, (=0.972%) properties at 1[KHz].

• 한국전기전자재료학회논문지
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• 제35권3호
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• pp.215-222
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• 2022

Artificial neuromorphic devices are considered the key component in realizing energy-efficient and brain-inspired computing systems. For the artificial neuromorphic devices, various material candidates and device architectures have been reported, including two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskite materials. In addition to conventional electrical neuromorphic devices, optoelectronic neuromorphic devices, which operate under a light stimulus, have received significant interest due to their potential advantages such as low power consumption, parallel processing, and high bandwidth. This article reviews the recent progress in optoelectronic neuromorphic devices using various active materials such as two-dimensional materials, metal-oxide semiconductors, organic semiconductors, and halide perovskites

• 공업화학
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• 제7권5호
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• pp.992-998
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• 1996

Citrate process로 제조한 $La_{1-x}Ca_xCoO_3$에서 Ca이 20mole% doping된 perovskite oxide가 산소환원반응에 대해 가장 높은 전류밀도와 specific activity를 보여주었으며 cyclic voltammogram에서 carbon만으로 제조된 전극에서보다 carbon과 Perovskite oxide를 혼합한 전극에서 높은 산소흡착/탈착전류를 보였다. 입자크기분포와 소결효과에 의해 $900^{\circ}C$, 5시간 공기중에서 소결한 $La_{0.8}Ca_{0.2}CoO_3$가 산소환원반응에 대한 전기화학적 촉매특성이 우수하였다.