• Journal of Korean Society of Environmental Engineers
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• v.29 no.3
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• pp.317-324
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• 2007

Fluorescence measurements of dissolved organic matter(DOM) have the superior advantages over other analysis tools for applying to water quality management. A preliminary study was conducted to test the feasibility of applying synchronous fluorescence measurements for tracing and monitoring pollution sources in a small stream located in an upstream area of the Sooyoung watershed in Busan. The water quality of the small stream is affected by leachate from sawdust pile and discharge of untreated sewage. The sampling sites included an upstream site, two pipes discharging untreated sewage, leachate from sawdust, and a downstream site. Of the five field samples, the leachate was distinguished from the other samples by a high peak at a lower wavelength range and a blunt peak at 350nm, suggesting that synchronous fluorescence can be used as a discrimination tool for monitoring the pollution. The efficacy of various indices derived from the spectral features to discriminate the pollution source was tested for well-defined mixture of the sawdust leachate and the upstream stream by comparing (1)the difference between measured values and those predicted based on mass balance and the characteristics of the two samples and (2)the linear correlations between index values and mass ratios of the sample mixtures. Of various discrimination indices selected, fluorescence intensities at 276 nm$({\Delta}\lambda=30nm)$and 347 nm$({\Delta}\lambda=60nm)$ were suggested as promising potential discrimination indices for the sawdust pollution source. Despite the limited number of samples and the study area, this study illustrates the evaluation process that should be followed to develop rapid, low-cost discrimination indices to monitor pollution sources based on end member mixing analyses.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.298-298
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• 2014

Quantum dot infrared photodetectors (QDIPs) based on Stranski-Krastanov (SK) quantum dots (QDs) have been widely explored for improved device performance using various designs of heterostructures. However, one of the biggest limitations of this approach is the "pancake" shape of the dot, with a base of 20-30 nm and a height of 4-6 nm. This limits the 3D confinement in the quantum dot and reduces the ratio of normal incidence absorption to the off-axis absorption. One of the alternative growth modes to the formation of SK QDs is a sub-monolayer (SML) deposition technique, which can achieve a much higher density, smaller size, better uniformity, and has no wetting layer as compared to the SK growth mode. Due to the advantages of SML-QDs, the SML-QDIP design has attractive features such as increased normal incidence absorption, strong in-plane quantum confinement, and narrow spectral wavelength detection as compared with SK-DWELL. In this study, we report on the improved device performance of InAs/InGaAs SML-QDIP with different composition of $Al_xGa1-_xAs$ barrier. Two SML-QDIPs (x=0.07 for sample A and x=0.20 for sample B) are grown with the 4 stacks 0.3 ML InAs. It is investigated that sample A with a confinement-enhanced (CE) $Al_{0.22}Ga_{0.78}As$ barrier had a single peak at $7.8{\mu}m$ at 77 K. However, sample B with an $Al_{0.20}Ga_{0.80}As$ barrier had three peaks at (${\sim}3.5{\mu}m$, ${\sim}5{\mu}m$, ${\sim}7{\mu}m$) due to various quantum confined transitions. The measured peak responsivities (see Fig) are ~0.45 A/W (sample A, at $7.8{\mu}m$, $V_b=-0.4V$ bias) and ~1.3 A/W (sample B, at $7{\mu}m$, $V_b=-1.5V$ bias). At 77 K, sample A and B had a detectivity of $1.2{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-0.4V$ bias) and $5.4{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-1.5V$ bias), respectively. It is obvious that the higher $D^*$ of sample B (than sample A) is mainly due to the low dark current and high responsivity.

• Journal of Bio-Environment Control
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• v.27 no.1
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• pp.54-63
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• 2018

Red and blue lights are effective wavelengths for photosynthesis in plants. In this study, we determined the effects of various combined ratios of red to blue LEDs on the quality of cherry tomato seedlings prior to transplantation, and their subsequent effects on the yield and quality of tomato fruits after transplanting. Two-week-old cherry tomato seedlings (Solanum lycopersicum cv. 'Cuty') were cultivated under various combined ratios of red (R; peak wavelength 655 nm) to blue (B; 456 nm) LEDs [red:blue = 41:59 (59B), 53:47 (47B), 65:35 (35B), 74:26 (26B), 87:13 (13B), or 100:0 (0B)] and fluorescent lamps and raised for 27 days. The cherry tomato seedlings were subsequently transplanted into a venlo-type greenhouse and cultivated for 75 days. At the seedling stage, the shoot fresh weight of seedlings in all RB combined treatments, except 0B and 59B, was higher than that of the control after 27 days of LED treatment. Shoot dry weight and leaf area also showed trends similar to that of shoot fresh weight. The stem length was significantly higher in 13B, 26B, and 35B treatments compared with the control and other treatments. In particular, the stem length of 26B plants was approximately 3.2 times longer than that of 59B plants. At 37 days after transplanting, the number of nodes was significantly higher in 26B and 47B plants, and the plant height of 26B plants was significantly higher than that of control and 59B plants. Total fruit yield in 26B plants, which was the highest, was approximately 1.6 and 1.8 times higher than that in control and 59B plants, respectively. Thus, the results of this study indicate that various combined ratios of red to blue LEDs directly affected to the growth of cherry tomato seedlings and may also affect parameters of reproductive growth such as fruit yield after transplantation.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.211-216
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• 2010

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.5}Al_{0.5}As$ buffer layers have been studied by using photoluminescence (PL) and time-resolved PL measurements. A$1-{\mu}m$ thick $In_{0.5}Al_{0.5}As$ buffer layers were deposited on a 500 nm thick GaAs layer, followed by the deposition of the InGaAs/InAlAs MQWs. In order to investigate the effects of InAlAs buffer layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of InAlAs buffer layer. The growth temperature for InAlAs buffer layer was varied from 320^{\circ}C to $580^{\circ}C$. The MQWs consist of three $In_{0.5}Ga_{0.5}$As wells with different well thicknesses (2.5 nm, 4.0 nm, and 6.0 nm thick) and 10 nm thick $In_{0.5}Al_{0.5}$As barriers. The PL spectra from the MQWs with InAlAs layer grown at lower temperature range ($320-580^{\circ}C$) showed strong peaks from 4 nm QW and 6 nm QW. However, for the MQWs with InAlAs buffer grown at higher temperature range ($320-480^{\circ}C$), the PL spectra only showed a strong peak from 6 nm QW. The strongest PL intensity was obtained from the MQWs with InAlAs layer grown at the fixed temperature of $480^{\circ}C$, while the MQWs with buffer layer grown at higher temperature from $530^{\circ}C$ to $580^{\circ}C$ showed the weakest PL intensity. From the emission wavelength dependence of PL decay times, the fast and slow decay times may be related to the recombination of carriers in the 4 nm QW and 6 nm QW, respectively. These results indicated that the growth temperatures of InAlAs layer affect the structural and optical properties of the MQWs.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.449-455
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• 2011

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.4}Al_{0.6}As$ buffer layer have been investigated by using photoluminescence (PL) and time-resolved PL measurements. A 1-${\mu}m$-thick $In_{0.4}Al_{0.6}As$ buffer layers were deposited at various temperatures from $320^{\circ}C$ to $580^{\circ}C$ on a 500-nm-thick GaAs layer, and then 1-${\mu}m$-thick $In_{0.5}Al_{0.5}As$ layers were deposited at $480^{\circ}C$, followed by the deposition of the InGaAs/InAlAs MQWs. In order to study the effects of $In_{0.4}Al_{0.6}As$ layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of $In_{0.4}Al_{0.6}As$ buffer layer. The MQWs consist of three $In_{0.5}Al_{0.5}As$ wells with different well thicknesses (2.5-nm, 4.0-nm, and 6.0-nm-thick) and 10-nm-thick $In_{0.5}Al_{0.5}As$ barriers. The PL peaks from 4-nm QW and 6-nm QW were observed. However, for the MQWs on the $In_{0.4}Al_{0.6}As$ layer grown by using the largest growth temperature variation (320-$580^{\circ}C$), the PL spectrum only showed a PL peak from 6-nm QW. The carrier decay times in the 4-nm QW and 6-nm QW were measured from the emission wavelength dependence of PL decay. These results indicated that the growth temperatures of $In_{0.4}Al_{0.6}As$ layer affect the optical properties of the MQWs.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.288-295
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• 2009

We report the etch characteristics of GaAs and AlGaAs in the diffusion pump-based capacitively coupled $BCl_3$ plasma. Process variables were chamber pressure ($50{\sim}180$ mTorr), CCP power ($50{\sim}200\;W$) and $BCl_3$ gas flow rate ($2.5{\sim}10$ sccm). Surface profilometry was used for etch rate and surface roughness measurement after etching. Scanning electron microscopy was used to analyze the etched sidewall and surface morphology. Optical emission spectroscopy was used in order to characterize the emission peaks of the $BCl_3$ plasma during etching. We have achieved $0.25{\mu}m$/min of GaAs etch rate with only 5 sccm $BCl_3$ flow rate when the chamber pressure was in the range of 50{\sim}130 mTorr. The etch rates of AlGaAs were a little lower than those of GaAs at the conditions. However, the etch rates of GaAs and AlGaAs decreased significantly when the chamber pressure increased to 180 mTorr. GaAs and AlGaAs were not etched with 50 W CCP power. With $100{\sim}200\;W$ CCP power, etch rates of the materials increased over $0.3{\mu}m$/min. It was found that the etch rates of GaAs and AlGaAs were not always proportional to the increase of CCP power. We also found the interesting result that AlGaAs did not etched at 2.5 sccm $BCl_3$ flow rate at 75 mTorr and 100 W CCP power even though it was etched fast like GaAs with more $BCl_3$ gas flow rates. By contrast, GaAs was etched at ${{\sim}}0.3{\mu}m$/min at the 2.5 sccm $BCl_3$ flow rate condition. A broad molecular peak was noticed in the range of $500{\sim}700\;mm$ wavelength during the $BCl_3$ plasma etching. SEM photos showed that 10 sccm $BCl_3$ plama produced more undercutting on GaAs sidewall than 5 sccm $BCl_3$ plasma.

• Economic and Environmental Geology
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• v.52 no.2
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• pp.129-139
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• 2019

This study investigates the spectral response of red lettuce (Lactuca sativa var crispa L.) to Zn concentration. The control group and the experimental groups treated with 1 mM(ZnT1), 5 mM(ZnT2), 10 mM(ZnT3), 50 mM(ZnT4), and 100 mM(ZnT5) were prepared for a pot experiment. Then, Zn concentration and spectral reflectance were measured for the different levels of Zn concentration in red lettuce. The Zn concentration of the control group had the range of 134-181 mg/kg, which was within the normal range of Zn concentration in uncontaminated crops. However, Zn concentration in the experimental group gradually increased with an increase in concentration of Zn injection. The spectral reflectance of red lettuce showed high peak in the red band due to anthocyanin, high reflectance in the infrared band due to the scattering effect of the cell structure, and absorption features associated with water. As Zn concentration in red lettuce leaves increased, the reflectance increased in the green and red bands and the reflectance decreased in the infrared band. The correlation analysis between Zn concentration and spectral reflectance showed that the reflectance of 700-1300 nm had a significant negative correlation with Zn concentration. The spectral band is a wavelength region closely related to the cell structure in the leaf, indicating possible cell destruction of leaf structure due to increased Zn concentration. In particular, 700-800 nm reflectance of the infrared band showed the strongest correlation with the Zn concentration. This study could be used to investigate the heavy metal contamination in soil around mining and agriculture area by spectroscopically recognizing heavy metal pollution of plant.