• Title/Summary/Keyword: Peak power density

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Effect on TENG Performance by Phase Control of TiOx Nanoparticles

  • Huynh, Nghia Dinh;Park, Hyun-Woo;Chung, Kwun-Bum;Choi, Dukhyun
    • Composites Research
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    • v.31 no.6
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    • pp.365-370
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    • 2018
  • One of the critical parameters to improve the output power for triboelectric nanogenerators (TENGs) is the surface charge density. In this work, we modify the tribo-material of TENG by introducing the $TiO_x$ embedded Polydimethylsiloxane (PDMS) in anatase and rutile phase. The effect of dielectric constant and electronic structure of the $TiO_x$ on the capacitance of TENG and the output power as well are discussed. The surface charge density is increased as the control of the dielectric constant in difference weight percent of $TiO_x$ and PDMS. As the results of that, the 5% $TiO_x$ rutile phase and 7% $TiO_x$ anatase phase embedded PDMS exhibit the highest TENG output. The peak value of voltage/current obtained from $TiO_x$ rutile and anatase phase are ${\sim}180V/8.2{\mu}A$ and $211.6V/8.7{\mu}A$, respectively, at the external force of 5 N and working frequency of 5 Hz, which gives over 12-fold and 15-fold power enhancement compared with the TENG based on the pristine PDMS film. This study provides a better understanding for TENG performance enhancement from the materials view.

Earthquake Responses of Nuclear Facilities Subjected to Non-vertically Incidental and Incoherent Seismic Waves (비수직 입사 비상관 지진파에 의한 원전 시설물의 지진 응답)

  • Lee, Jin Ho
    • Journal of the Earthquake Engineering Society of Korea
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    • v.26 no.6
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    • pp.237-246
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    • 2022
  • Based on the random-vibration-theory methodology, dynamic responses of nuclear facilities subjected to obliquely incidental and incoherent earthquake ground motions are calculated. The spectral power density functions of the 6-degree-of-freedom motions of a rigid foundation due to the incoherent ground motions are obtained with the local wave scattering and wave passage effects taken into consideration. The spectral power density function for the pseudo-acceleration of equipment installed on a structural floor is derived. The spectral acceleration of the equipment or the in-structure response spectrum is then estimated using the peak factors of random vibration. The approach is applied to nuclear power plant structures installed on half-spaces, and the reduction of high-frequency earthquake responses due to obliquely incident incoherent earthquake ground motions is examined. The influences of local wave scattering and wave passage effects are investigated for three half-spaces with different shear-wave velocities. When the shear-wave velocity is sufficiently large like hard rock, the local wave scattering significantly affects the reduction of the earthquake responses. In the cases of rock or soft rock, the earthquake responses of structures are further affected by the incident angles of seismic waves or the wave passage effects.

Properties of the RF Sputter Deposited n-ZnO Thin-Film and the n-ZnO/p-GaN heterojunction LED (RF스퍼터링법으로 성장시킨 n-ZnO 박막과 n-ZnO/p-GaN 이종접합 LED의 특성)

  • Shin, Dongwhee;Byun, Changsub;Kim, Seontai
    • Korean Journal of Materials Research
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    • v.23 no.3
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    • pp.161-167
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    • 2013
  • The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at $200^{\circ}C$ and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

Effect of RF Powers on the Electro·optical Properties of ZnO Thin-Films (RF 출력이 ZnO 박막의 전기·광학적 특성에 미치는 영향)

  • Shin, Dongwhee;Byun, Changsob;Kim, Seontai
    • Korean Journal of Materials Research
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    • v.22 no.10
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    • pp.508-512
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    • 2012
  • ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at $200^{\circ}C$ at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.

Comparative Study of the Symbol Rate Detection of Unknown Digital Communication Signals (미상 디지털 통신 신호의 심볼율 검출 방식 비교)

  • Joo, Se-Joon;Hong, Een-Kee
    • Journal of Advanced Navigation Technology
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    • v.7 no.2
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    • pp.141-148
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    • 2003
  • This paper presents and compares several techniques that detect the symbol rate of unknown received signal. Symbol rate is detected from the power spectral density of the circuits such as the delay and multiplier circuit, the square law circuit, and analytic signal, etc. As a result of discrete Fourier transform of the output signals of these circuits, a lot of spectral lines and some peaks appear in frequency domain and the position of first peak is corresponding to the symbol rate. If a spectral line on the frequency that is not located in symbol rate is larger than the first peak, the symbol rate is erroneously detected. Thus, the ratio between the value of first peak and the highest side spectral line is used for the measure of the performance of symbol rate detector. For the MPSK modulation, the analytic signal method shows better performance than the delay and multiplier and square law circuits when the received signal power is lager than -20dB. It is also noted that the delay and multiplier circuit is not able to detect the symbol rate for the QAM modulation.

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Immediate effect of Nd:YAG laser monotherapy on subgingival periodontal pathogens: a pilot clinical study

  • McCawley, Thomas K.;McCawley, Mark N.;Rams, Thomas E.
    • Journal of Periodontal and Implant Science
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    • v.52 no.1
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    • pp.77-87
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    • 2022
  • Purpose: This pilot study assessed the immediate in vivo effect of high peak pulse power neodymium-doped yttrium aluminum garnet (Nd:YAG) laser monotherapy on selected red/orange complex periodontal pathogens in deep human periodontal pockets. Methods: Twelve adults with severe periodontitis were treated with the Laser-Assisted New Attachment Procedure (LANAP®) surgical protocol, wherein a free-running, digitally pulsed, Nd:YAG dental laser was used as the initial therapeutic step before mechanical root debridement. Using a flexible optical fiber in a handpiece, Nd:YAG laser energy, at a density of 196 J/cm2 and a high peak pulse power of 1,333 W/pulse, was directed parallel to untreated tooth root surfaces in sequential coronal-apical passes to clinical periodontal probing depths, for a total applied energy dose of approximately 8-12 joules per millimeter of periodontal probing depth at each periodontal site. Subgingival biofilm specimens were collected from each patient before and immediately after Nd:YAG laser monotherapy from periodontal pockets exhibiting ≥6 mm probing depths and bleeding on probing. Selected red/orange complex periodontal pathogens (Porphyromonas gingivalis, Tannerella forsythia, Prevotella intermedia/nigrescens, Fusobacterium nucleatum, Parvimonas micra, and Campylobacter species) were quantified in the subgingival samples using established anaerobic culture techniques. Results: All immediate post-treatment subgingival biofilm specimens continued to yield microbial growth after Nd:YAG laser monotherapy. The mean levels of total cultivable red/orange complex periodontal pathogens per patient significantly decreased from 12.0% pretreatment to 4.9% (a 59.2% decrease) immediately after Nd:YAG laser monotherapy, with 3 (25%) patients rendered culture-negative for all evaluated red/orange complex periodontal pathogens. Conclusions: High peak pulse power Nd:YAG laser monotherapy, used as the initial step in the LANAP® surgical protocol on mature subgingival biofilms, immediately induced significant reductions of nearly 60% in the mean total cultivable red/orange complex periodontal pathogen proportions per patient prior to mechanical root instrumentation and the rest of the LANAP® surgical protocol.

Photoluminescence in Carbon-doped GaAs Epilayers Grown on GaAs (311)A (GaAs (311)A 기판 위에 성장된 탄소 도핑된 GaAs 에피층의 광여기 발광)

  • 조신호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.3
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    • pp.208-213
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    • 2002
  • We present the temperature and excitation power density dependence of the photoluminescence from carbon-doped GaAs epilayers grown on GaAs (311)A substrate by atmospheric pressure metalorganic chemical vapor deposition. The measured temperature dependence of the PL peak energy is well expressed by an empirical formula proposed by Varshni. The thermal quenching mechanism of the intensity of 16 K luminescence peak at 1.480 eV is described with the dominant activation energy of 27$\pm$2 meV. The activation energy shows an evidence that the emission band involves the carbon acceptor in the recombination process.

Thermal-Aware Floorplanning with Min-cut Die Partition for 3D ICs

  • Jang, Cheoljon;Chong, Jong-Wha
    • ETRI Journal
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    • v.36 no.4
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    • pp.635-642
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    • 2014
  • Three-dimensional integrated circuits (3D ICs) implement heterogeneous systems in the same platform by stacking several planar chips vertically with through-silicon via (TSV) technology. 3D ICs have some advantages, including shorter interconnect lengths, higher integration density, and improved performance. Thermal-aware design would enhance the reliability and performance of the interconnects and devices. In this paper, we propose thermal-aware floorplanning with min-cut die partitioning for 3D ICs. The proposed min-cut die partition methodology minimizes the number of connections between partitions based on the min-cut theorem and minimizes the number of TSVs by considering a complementary set from the set of connections between two partitions when assigning the partitions to dies. Also, thermal-aware floorplanning methodology ensures a more even power distribution in the dies and reduces the peak temperature of the chip. The simulation results show that the proposed methodologies reduced the number of TSVs and the peak temperature effectively while also reducing the run-time.

Factors Affecting Acoustic Responses of Egg Shell (난각의 음향반응에 영향을 주는 인자)

  • 조한근;최완규
    • Journal of Biosystems Engineering
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    • v.22 no.1
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    • pp.41-48
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    • 1997
  • A nondestructive quality inspection technique using acoustic impulse response method was studied to investigate the feasibility of egg shell inspection. An experimental system was built to generate impact force, to measure the response signal and to analyze the frequency spectrum. This system includes an impulse generating unit, an egg holding seat, a microphone with preamplifier, and a digital oscilloscope connected to Personal Computer by RS-232C interface. The factors such as impulse generating method, egg holding method, and sensor location were evaluated by analyzing the power spectrum density of the measured signal. The results obtained are summarized as follows : 1. From the sampled eggs, the proper conditions for detecting damaged eggs were found as followings; ceramic for the impact ball material, rubber for egg seat material, 20 degrees for an impact angle of pendulum, 10mm for the distance between egg and sensor, the sharp side for impacting part, and 180 degrees for the location of sensor. 2. Examination of the Fourier transformed analysis in beth normal and damaged eggs revealed that those factors such as the resonant frequency, a number of peak frequencies and the magnitude of power spectrum were important to detect damaged eggs.

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Grid Connected PV System with a Function to Suppress Disturbances caused by Solar-cell Array Instantaneous Output Power Fluctuation (태양전지어레이 순시 출력변동에 의한 외란의 억제기능을 갖는 계통연계형 태양광발전 시스템)

  • Kim, Hong-Sung;Choe, Gyu-Ha;Yu, Gwon-Jong
    • Solar Energy
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    • v.19 no.4
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    • pp.63-69
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    • 1999
  • The conventional grid connected PV(Photovoltaic) system has a unstable output pattern due to its dependence on the weather condition, although solar-cell array averagely has a regular output characteristics to have a peak output nearly at noon. Therefore assuming the high density grid connection in the future, this unstable output pattern can be one of the main reasons to generate power disturbance such as voltage variation, frequency variation and harmonic voltage generation in low voltage distribution line. However general grid connected solar-cell system do not have functions to cope with these disturbances. Therefore this study proposed a advanced type grid connected PV system with functions to suppress output power fluctuation due to solar-cell array output variation and showed the levelling effect of fluctuation due to instantaneous array output variation.

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