• Korean Journal of Materials Research
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• v.21 no.3
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• pp.138-143
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• 2011

Nanosized Pt, Pt-Ru and Pt-$CeO_2$ electrocatalysts supported on acid-treated carbon nanotube (CNT) were synthesized by microwave-assisted heating of polyol process using $H_2Cl_6Pt{\cdot}6H_2O$, $RuCl_3$, $CeCl_3$ precursors, respectively, and were characterized by XRD and TEM. And then the electrochemical activity of methanol oxidation for catalyst/CNT nanocomposite electrodes was investigated. The microwave assisted polyol process produced the nano-sized crystalline catalysts particles on CNT. The size of Pt supported on CNT was 7~12 nm but it decreased to 3~5 nm in which 10wt% sodium acetate was added as a stabilizer during the polyol process. This fine Pt catalyst particles resulted in a higher current density for Pt/CNT electrode. It was also found that 10 nm size of PtRu alloys were formed by polyol process and the onset potential decreased with Ru addition. Cyclic voltammetry analysis revealed that the $Pt_{75}Ru_{25}/CNT$ electrode had the highest electrochemical activity owing to a higher ratio of the forward to reverse anodic peak current. And the chronoamperemetry test showed that $Pt_{75}Ru_{25}$ catalyst had a good catalyst stability. The activity of Pt was also found to be improved with the addition of $CeO_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.259.1-259.1
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• 2014

Recently non-thermal plasma has been frequently applied to various research fields. The liquid plasma have received much attention lately because of interests in surgical and nanomaterial synthesis applications. Especially, intensive researches have been carried out for non-thermal plasma in liquid by using various electrode configurations and power supplies. We have developed a bioplasma source which could be used in a liquid, in which outer insulator has been covered onto the outer electrode. Also we have also put an insulator between the inner and outer electrode. Based on the surface discharge mode, the nonthermal bioplasma has been generated inside a liquid by using an alternating current voltage generator with peak voltage of 12 kV under driving frequency of 22 KHz. Here the discharge voltage and current have been measured for electrical characteristics. Especially, We have measured discharge and optical characteristics under various liquids of deionized (DI) water, tap water, and saline by using monochromator. We have also observed nitric oxide (NO), hydrogen peroxide (H2O2), and hydroxyl (OH) radical species by optical emission spectroscopy during the operation of bioplasma discharge inside various kinds of DI water, tap water, and saline. Here the temperature has been kept to be $40^{\circ}C$ or less when discharge in liquid has been operated in this experiment. Also we have measured plasma temperature by high speed camera image and density by using either H-alpha or H-beta Stark broadening method.

• Journal of the Korean Applied Science and Technology
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• v.20 no.2
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• pp.94-100
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• 2003

We studied electrochemical characteristics of Langmuir-Blodgett(LB) films by using cyclic voltammetry with a three-electrode system. An Ag/AgCl as a reference electrode, a platinum wire as a counter electrode and LB film-coated indium tin oxide(ITO) as a working electrode were used to study electrochemical characteristics at a various concentration of $NaClO_4$ solution. LB films were reduced from initial potential to -1350 mV, continuously oxidized to l650mV and returned to the initial point. The scan rate was l00mV/s. The monolayer surface morphology of the LB film have been measured by Atomic Force Microscope(AFM). As a result, We comfirmed that the microscopic properties of LB film by AFM showed the good orientation of momolayer molecules and the thickness of monolayer was 3.5-4.lnm. The cyclic voltammograms(CV) of the ITO-coated glass showed the peak potentials for the reduction-oxidation reation. LB films of 4-octyl-4'-(5-carboxypentamethyleneoxy) azobenzene(8A5H) / L-${\alpha}$-phosphayidyl choline, dilauroyl(DLPC) seemed to be irreversible process caused by only the oxidation current from the cyclic voltammogram. The current of oxidatation increased at cyclic voltammogram by increasing 8A5H density in LB films. The diffusivity(D) of LB films increased with increasing of a 8A5H amount and was inversely proportional to the concentration of $NaClO_4$ solution.

• Korean Journal of Materials Research
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• v.29 no.7
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• pp.456-462
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• 2019

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

• Current Photovoltaic Research
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• v.9 no.4
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• pp.128-132
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• 2021

Advances in screen printing technology have been led to development of high efficiency silicon solar cells. As a post PERx structure, an n-type wafer-based rear side TOPCon structure has been actively researched for further open-circuit voltage (Voc) improvement. In the case of the metal contact of the TOPCon structure, the poly-Si thickness is very important because the passivation of the substrate will be degraded when the metal paste penetrates until substrate. However, the thin poly-Si layer has advantages in terms of current density due to reduction of parasitic absorption. Therefore, poly-Si thickness and firing temperature must be considered to optimize the metal contact of the TOPCon structure. In this paper, we varied poly-Si thickness and firing peak temperature to evaluate metal induced recombination (Jom) and contact resistivity. Jom was evaluated by using PL imaging technique which does not require both side metal contact. As a results, we realized that the SiN_x deposition conditions can affect the metal contact of the TOPCon structure.

• Korean Journal of Materials Research
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• v.33 no.12
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• pp.517-524
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• 2023

BaTiO₃-Poly vinylidene fluoride (PVDF) solution was prepared by adding 0~25 wt% BaTiO₃ nanopowder and 10 wt% PVDF powder in solvent. BaTiO₃-PVDF film was fabricated by spreading the solution on a glass with a doctor blade. The output performance increased with increasing BaTiO₃ concentration. When the BaTiO₃ concentration was 20 wt%, the output voltage and current were 4.98 V and 1.03 ㎂ at an applied force of 100 N. However, they decreased when the over 20 wt% BaTiO₃ powder was added, due to the aggregation of particles. To enhance the output performance, the generator was poled with an electric field of 150~250 kV/cm at 100 ℃ for 12 h. The output performance increased with increasing electric field. The output voltage and current were 7.87 V and 2.5 ㎂ when poled with a 200 kV/cm electric field. This result seems likely to be caused by the c-axis alignment of the BaTiO₃ after poling treatment. XRD patterns of the poled BaTiO₃-PVDF films showed that the intensity of the (002) peak increased under high electric field. However, when the generator was poled with 250 kV/cm, the output performance of the generator degraded due to breakdown of the BaTiO₃-PVDF film. When the generator was matched with 800 Ω resistance, the power density of the generator reached 1.74 mW/m². The generator was able to charge a 10 ㎌ capacitor up to 1.11 V and turn on 10 red LEDs.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.1-6
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• 2008

New devices with the structure of ITO/2-TNATA/NPB/TCTA/CBP:$7%Ir(ppy)_3$/BCP/SFC-137/LiF/Al were designed and fabricated to develop high efficiency green phosphorescent organic light emitting diodes and their electroluminescence properties were evaluated. Among the devices with different thicknesses of CBP in a range of $150{\AA}{\sim}350{\AA}$, the best luminance was obtained in the device with $300{\AA}$-thick CBP host. Nearly saturated current efficiencies indicates that the maximum efficiency value can be obtained with CBP thicknesses of $300{\AA}{\sim}350{\AA}$. The current density, luminance, and current efficiency of the PhOLED(phosphorescent organic light emitting diode) with $CBP(300{\AA}):7%Ir(ppy)_3-emissive$ layer at an applied voltage of 10V were $40mA/cm^2,\;10000cd/m^2$, and 25 cd/A, respectively. The maximum current efficiency was 40.5cd/A under the luminance of $160cd/m^2$. The peak wavelength and FWHM(full width at half maximum) in the electroluminescence spectral were 512nm and 60nm, respectively. The color coordinate was (0.28, 0.63) on the CIE (Commission Internationale de I'Eclairage) chart.

• Journal of the Korean Chemical Society
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• v.54 no.3
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• pp.291-294
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• 2010

In this study, we demonstrated high-efficiency blue organic light-emitting diodes (OLEDs) employing BCzVBi as a blue fluorescent dye doped into blue host material, DPVBi with various concentration. The optimized blue OLED device having high-efficiency was constructed with structure of NPB (500 ${\AA}$) / DPVBi:BCzVBi-6% (150 ${\AA}$)/$Alq_3$(300 ${\AA}$) / Liq (20 ${\AA}$) / Al (1000 ${\AA}$). The maximum luminescence of blue OLED was 13200 cd/$m^2$ at 13.8 V and current density and maximum efficiency were 26.4 mA/$cm^2$ at 1000 cd/$m^2$ and 4.24 cd/A at 3.9 V, respectively. Luminous efficiency shows two times higher than comparing with non-doped BCzVBi blue OLED whereas $CIE_{x,y}$ coordinate was similar with bare DPVBi blue OLED such as (0.16, 0.19). Electroluminescence of BCzVBi-6% doped blue OLED has two major peaks at 445 nm and 470 nm whereas pure DPVBi's blue peak appears at 456 nm and it is happened through endothermic Forster energy transfer by molecule's vibration between LUMO of DPVBi as host material and LUMO of BCzVBi as dopant in device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.33-35
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• 2008

We have fabricated and evaluated new high efficiency green light emitting phosphorescent devices with an emission layer of $[TCTA_{1/3}TAZ_{2/3}/TAZ]:Ir(ppy)_3$. The whole experimental devices have the basic structure of $2-TNATA(500 {\AA})/NPB(300{\AA})/EML(300{\AA})/BCP(50{\AA})/SFC137(500{\AA})$ between anode and cathode. We have also fabricated conventional phosphorescent devices with emission layers of $(TCTA_{1/3}TAZ_{2/3}):Ir(ppy)_3$ and $(TCTA/TAZ):Ir(ppy)_3$ and compared their electroluminescence characteristics with those of the device with an emission layer of $(TCTA/TCTA_{1/3}TAZ_{2/3}/TAZ):Ir(ppy)_3$. The current density(J), luminance(L), and current efficiency($\eta$) of the device with an emission layer of $(80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ):10%-Ir(ppy)_3$ were 95 $mA/cm^2$, 25000 $cd/m^2$, and 27 cd/A at an applied voltage of 10V, respectively. The maximum current efficiency was 52 cd/A under the luminance of 400 $cd/m^2$. The peak wavelength and FWHM(full width at half maximum) in the electroluminescence spectral were 513nm and 65nm, respectively. The color coordinate was (0.30, 0.62) on the CIE (Commission Internationale de l'Eclairage) chart. Under the luminance of 15000 $cd/m^2$, the current efficiency of the device with an emission layer of $(80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ):10%-Ir(ppy)_3$ was 34 cd/A, which has been improved 1.7 times and 1.4 limes compared to those of the devices with emission layers of $(300{\AA}-TCTA_{1/3}TAZ_{2/3}): 10%-Ir(ppy)_3$ and $(100{\AA}-TCTA/200{\AA}-TAZ):10%-Ir(ppy)_3$, respectively.

• Korean Journal of Materials Research
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• v.18 no.7
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• pp.347-351
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• 2008

We have fabricated and evaluated newNew high high-efficiency green green-light light-emitting phosphorescent devices with an emission layer of [$TCTA/TCTA_{1/3}TAZ_{2/3}/TAZ$] : $Ir(ppy)_3$ were fabricated and evaluated, and compared the electroluminescence characteristics of these devices were compared with the conventional phosphorescent devices with emission layers of ($TCTA_{1/3}TAZ_{2/3}$) : $Ir(ppy)_3$ and (TCTA/TAZ) : $Ir(ppy)_3$. The current density, luminance, and current efficiency of the a device with an emission layer of ($80{\AA}-TCTA/90^{\circ}{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ$) : 10%-$Ir(ppy)_3$ were $95\;mA/cm^2$, $25000\;cd/m^2$, and 27 cd/A at an applied voltage of 10 V, respectively. The maximum current efficiency was 52 cd/A under the a luminance value of $400\;cd/m^2$. The peak wavelength and FWHM (FWHM (full width at half maximum) in the electroluminescence spectral were 513 nm and 65 nm, respectively. The color coordinate was (0.30, 0.62) on the CIE (Commission Internationale de I'Eclairage) chart. Under the a luminance of $15000\;cd/m^2$, the current efficiency of the a device with an emission layer of ($80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ$) : 10%-$Ir(ppy)_3$ was 34 cd/A, which has beenshowed an improvement of improved 1.7 and 1.4 times compared to those of the devices with emission layers of ($300{\AA}-TCTA_{1/3}TAZ_{2/3}$) : 10%-$Ir(ppy)_3$ and ($100{\AA}-TCTA/200{\AA}$-TAZ) : 10%-$Ir(ppy)_3$, respectively.