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Performance of the Electrode for All-vanadium Redox Flow Battery (바나듐 레독스 흐름 전지용 전극의 성능 평가)

  • IN, DAE-MIN;SONG, YOUNG-JOON;LEE, DAE-YEOP;RYU, CHEOL-HWI;HWANG, GAB-JIN
    • Transactions of the Korean hydrogen and new energy society
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    • v.28 no.2
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    • pp.200-205
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    • 2017
  • The three electrodes (carbon felt) were tested in all-vanadium redox flow battery (VRFB) to confirm the its usefulness. The electrode property was measured by the CV (cyclic voltammetry) method. The current ratio of maximum peak(IPA/IPC) in GF040BH5 and GF051BH3 had almost the same value compared to that in XF30A. The performances of VRFB using the each electrode were measured during 5 cycles of charge-discharge at the current density of $60mA/cm^2$. An average energy efficiency of the VRFB was 77.8%, 77.3%, and 79.2% for XF30A, GF040BH5 and GF051BH3, respectively. It was confirmed from the data that GF040BH5 and GF051BH3 is well suited for use in a VRFB as a electrode, like XF30A.

nBn Based InAs/GaSb Type II Superlattice Detectors with an N-type Barrier Doping for the Infrared Detection

  • Kim, Ha-Sul;Lee, Hun;Hwang, Je-Hwan;Lee, Sang-Jun;Klein, B.;Myers, S.;Krishna, S.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.128.2-128.2
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    • 2014
  • Long-wave infrared detectors using the type-II InAs/GaSb strained superlattice (T2SL) material system with the nBn structure were designed and fabricated. The band gap energy of the T2SL material was calculated as a function of the thickness of the InAs and GaSb layers by the Kronig-Penney model. Growth of the barrier material (Al0.2Ga0.8Sb) incorporated Te doping to reduce the dark current. The full width at half maximum (FWHM) of the 1st satellite superlattice peak from the X-ray diffraction was around 45 arc sec. The cutoff wavelength of the fabricated device was ${\sim}10.2{\mu}m$ (0.12eV) at 80 K while under an applied bias of -1.4V. The measured activation energy of the device was ~0.128 eV. The dark current density was shown to be $1.2{\times}10^{-5}A/cm^2$ at 80 K and with a bias -1.4 V. The responsivity was 1.9 A/W at $7.5{\mu}m$ at 80K and with a bias of -1.9V.

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Electro-Catalytic Oxidation of Amoxicillin by Carbon Ceramic Electrode Modified with Copper Iodide

  • Karim-Nezhad, Ghasem;Pashazadeh, Ali;Pashazadeh, Sara
    • Journal of the Korean Chemical Society
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    • v.57 no.3
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    • pp.322-328
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    • 2013
  • Copper iodide was employed as a modifier for preparation of a new carbon ceramic electrode. For the first time, the catalytic oxidation of amoxicillin (AMX) was demonstrated by cyclic voltammetry, chronoamperometry and amperometry methods at the surface of this modified carbon ceramic electrode. The copper iodide modified sol-gel derived carbon ceramic (CIM-SGD-CC) electrode has very high catalytic ability for electrooxidation of amoxicillin. The catalytic oxidation peak current was linearly dependent on the amoxicillin concentration and the linearity range obtained was 100 to 1000 ${\mu}mol\;L^{-1}$ with a detection limit of 0.53 ${\mu}mol\;L^{-1}$. The diffusion coefficient ($D=(1.67{\pm}0.102){\times}10^{-3}\;cm^2\;s^{-1}$), and the kinetic parameter such as the electron transfer coefficient (${\alpha}$) and exchange current density ($j_0$) for the modified electrode were calculated. The advantages of the modified CCE are its good stability and reproducibility of surface renewal by simple polishing, excellent catalytic activity and simplicity of preparation.

Effect of Electrode Structures on Electron Emission of the $Pb(Zr_{0.56}Ti_{0.44})O_3$ Ferroelectric Cathode ($Pb(Zr_{0.56}Ti_{0.44})O_3$ 강유전체 음극의 전극 모형에 따른 전자 방출 특성)

  • Seo, Min-Su;Hong, Ki-Min
    • Journal of the Korea Institute of Military Science and Technology
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    • v.13 no.4
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    • pp.699-707
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    • 2010
  • Electric-field-induced electron emission from the three kinds of $Pb(Zr_{0.56}Ti_{0.44})O_3$ ferroelectric cathodes with different electrode structure has been investigated. Regardless of the electrode structures, a threshold field of the each cathode was 2.5-2.6kV/mm, which is 3 times higher than the coercive field of $Pb(Zr_{0.56}Ti_{0.44})O_3$ material. Although the waveform of the electron currents was affected by the structure of the electrode, no significant difference for the emission properties such as the peak current and the pulse width was observed from the three kinds of the cathodes. However, the current density of the cathode was dependent on the electrode structure. From the simulation of electric field distribution, the surface flashover, and the injury region of the cathode surface, it was proved that the prime electrons were initiated at the electrode-ceramic-vacuum triple point by field emission and the emission currents were strongly enhanced by the surface plasma.

Satellite data analysis of the China Coastal Waters in the Seas surrounding Jeju Island, Korea

  • Cho, Han-Keun;Kang, Heung-Soon;Kim, Jung-Chang;Yoon, Hong-Joo
    • Korean Journal of Remote Sensing
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    • v.22 no.5
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    • pp.397-402
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    • 2006
  • China Coastal Water (CCW) usually appears in the seas surrounding Jeju Island annually (June-October) and is very pronounced in August. The power spectrum density (PSD), sea level anomalies (SLAs), and sea surface temperatures (SSTs) were found to peak annually and semiannually. The peaks at intervals of 80-, 60-, and 43-days are considered to be influenced by CCW and the Kuroshio Current. Generally, low-salinity water appears to the west of Jeju Island from June through October and gradually propagates to the east, where CCW meets the Tsushima Current. Empirical orthogonal function (EOF) analysis of SLAs and SSTs indicated that the variance in SLAs and SSTs was 55.70 and 98.09% in the first mode, respectively. The PSD for the first mode of EOF analysis of SLAs was stronger in the western than in the eastern waters because of the influence of CCW. The PSD for the EOF analysis of SSTs was similar in all areas (the Yangtze Estuary and the waters to the west and east of Jeju Island), with a period of approximately 260 days.

Asymmetric Metal-Semiconductor-Metal Al0.24Ga0.76N UV Sensors with Surface Passivation Effect Under Local Joule Heating

  • Byeong-Jun Park;Sung-Ho Hahm
    • Journal of Sensor Science and Technology
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    • v.32 no.6
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    • pp.425-431
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    • 2023
  • An asymmetric metal-semiconductor-metal Al0.24Ga0.76N ultraviolet (UV) sensor was fabricated, and the effects of local Joule heating were investigated. After dielectric breakdown, the current density under a reverse bias of 2.0 V was 1.1×10-9 A/cm2, significantly lower than 1.2×10-8 A/cm2 before dielectric breakdown; moreover, the Schottky behavior of the Ti/Al/Ni/Au electrode changed to ohmic behavior under forward bias. The UV-to-visible rejection ratio (UVRR) under a reverse bias of 7.0 V before dielectric breakdown was 87; however, this UVRR significantly increased to 578, in addition to providing highly reliable responsivity. Transmission electron microscopy revealed interdiffusion between adjacent layers, with nitrogen vacancies possibly formed owing to local Joule heating at the AlGaN/Ti/Al/Ni/Au interfaces. X-ray photoelectron microscopy results revealed decreases in the peak intensities of the O 1s binding energies associated with the Ga-O bond and OH-, which act as electron-trapping states on the AlGaN surface. The reduction in dark current owing to the proposed local heating method is expected to increase the sensing performance of UV optoelectronic integrated devices, such as active-pixel UV image sensors.

Oxygen Reduction Reaction of La1-xCaxCoO3 of Gas Diffusion Electrode in Alkaline Fuel Cell (알칼리형 연료전지용 La1-xCaxCoO3 기체확산전극의 산소환원반응)

  • Shim, Joong-Pyo;Park, Yong-Suk;Lee, Hong-Ki;Park, Soo-Gil;Lee, Ju-Seong
    • Applied Chemistry for Engineering
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    • v.7 no.5
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    • pp.992-998
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    • 1996
  • The $La_{0.8}Ca_{0.2}CoO_3$ prepared by a citrate process was shown to have higher oxygen reduction current density and specific activity than $LaCoO_3$, $La_{0.6}Ca_{0.4}CoO_3$. In the cyclic voltammogram, an oxygen desorption peak of a $La_{0.8}Ca_{0.2}CoO_3$+carbon electrode was larger than that of a only carbon electrode. $La_{0.8}Ca_{0.2}CoO_3$ sintered at $900^{\circ}C$ for 5 hours was shown high oxygen reduction current density because of the particle size distribution and sintering effect.

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Fabrication of GaN Transistor on SiC for Power Amplifier (전력증폭기용 SiC 기반 GaN TR 소자 제작)

  • Kim, Sang-Il;Lim, Byeong-Ok;Choi, Gil-Wong;Lee, Bok-Hyung;Kim, Hyoung-Joo;Kim, Ryun-Hwi;Im, Ki-Sik;Lee, Jung-Hee;Lee, Jung-Soo;Lee, Jong-Min
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.2
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    • pp.128-135
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    • 2013
  • This letter presents the MISHFET with si-doped AlGaN/GaN heterostructure for power amplifier. The device grown on 6H-SiC(0001) substrate with a gate length of 180 nm has been fabricated. The fabricated device exhibited maximum drain current density of 837 mA/mm and peak transconductance of 177 mS/mm. A unity current gain cutoff frequency was 45.6 GHz and maximum frequency of oscillation was 46.5 GHz. The reported output power density was 1.54 W/mm and A PAE(Power Added Efficiency) was 40.24 % at 9.3 GHz.

Refinement of Crystalline Boron and the Superconducting Properties of $MgB_2$ by Attrition Ball Milling (어트리션 볼 밀링에 의한 보론 분말의 미세화 및 $MgB_2$의 초전도특성)

  • Lee, J.H.;Shin, S.Y.;Jun, B.H.;Kim, C.J.;Park, H.W.
    • Progress in Superconductivity
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    • v.10 no.1
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    • pp.23-28
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    • 2008
  • We report refinement of crystalline boron by an attrition ball milling system and the superconducting properties of the $MgB_2$ pellets prepared from the refined boron. In this work, we have conducted the ball milling with only crystalline boron powder, in order to improve homogeneity and control the grain size of the $MgB_2$ that is formed from it. We observed that the crystalline responses in the ball-milled boron became broader and weaker when the ball-milling time was further increased. On the other hand, the $B_{2}O_{3}$ peak became stronger in the powders, resulting in an increase in the amount of MgO within the $MgB_2$ volume. The main reason for this is a greater oxygen uptake. From the perspective of the superconducting properties, however, the sample prepared from boron that was ball milled for 5 hours showed an improvement of critical current density ($J_c$), even with increased MgO phase, under an external magnetic field at 5 and 20 K.

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RF Dispersion and Linearity Characteristics of AlGaN/InGaN/GaN HEMTs (AlGaN/InGaN/GaN HEMTs의 RF Dispersion과 선형성에 관한 연구)

  • Lee, Jong-Uk
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.11
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    • pp.29-34
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    • 2004
  • This paper reports the RF dispersion and linearity characteristics of unpassivated AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE). The devices with a 0.5 ${\mu}{\textrm}{m}$ gate-length exhibited relatively good DC characteristics with a maximum drain current of 730 mA/mm and a peak g$_{m}$ of 156 mS/mm. Highly linear characteristic was observed by relatively flat DC transconductance (g$_{m}$) and good inter-modulation distortion characteristics, which indicates tight channel carrier confinement of the InGaN channel. Little current collapse in pulse I-V and load-pull measurements was observed at elevated temperatures and a relatively high power density of 1.8 W/mm was obtained at 2 GHz. These results indicate that current collapse related with surface states will not be a power limiting factor for the AlGaN/InGaN HEMTs.