• Journal of Power Electronics
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• v.11 no.4
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• pp.499-506
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• 2011

This paper presents an interleaved active-clamping zero-voltage-switching (ZVS) forward-flyback converter without an output choke. The presented topology has two active-clamping circuits with two separated transformers. Because of the interleaved operation of the converter, the output current ripple will be reduced. The proposed converter can approximately share the total load current between the two secondaries. Therefore, the transformer copper loss and the rectifier diodes conduction loss can be decreased. The output capacitor is made of two series capacitors which reduces the peak reverse voltage of the rectifier diodes. The circuit has no output inductor and few semiconductor elements, such that the adopted circuit has a simpler structure, a lower cost and is suitable for high power density applications. A detailed analysis and the design of this new converter are described. A prototype converter has been implemented and experimental results have been recorded with an ac input voltage of 85-135Vrms, an output voltage of 12V and an output current of 16A.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.475-476
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• 2006

Recently, the demand for high density MOSFET arrays are increasing. In implementing 3-D devices to this end, it is inevitable to ion-implant vertically in order to avoid screening effects caused by high silicon fins. In this study, the dependency of drain current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak (PCP) and the doping gradient are varied to look into the effects on primary current characteristics. Through these analyses, criteria of ion-implantation for 3-D devices are established.

• Progress in Superconductivity and Cryogenics
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• v.24 no.4
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• pp.50-54
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• 2022

High temperature superconducting (HTS) magnets for large-capacity energy storage system need to be composed of toroid magnets with high energy density, low leakage magnetic fields, and easy installation. To realize such a large capacity of a toroid HTS magnet, an HTS cable with large current capacity would be preferred because of the limited DC link voltage and instantaneous high power required for compensation of the disturbance in the power grid. In this paper, the optimal operating strategies of the SMES for peak load reduction of the microgrid system were calculated according to the load variation characteristics, and the effect of compensation of the frequency change in microgrid with a SMES were also simulated. Based on the result of the simulation, key design parameters of SMES coil were presented for two cases to define the specification of the HTS cable with large current capacities for winding of HTS toroid coils, which will be need for development of the HTS cable as a future work.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.881-884
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• 2008

In this study, polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE) in the composition from 51/49, was deposited on platinum for a metal-ferroelectric-metal structure. From XRD patterns, the 70 nm- and 140 nm-thick PVDF-TrFE films showed the intensity peak of near $20^{\circ}$ connected to a ferroelectric phase. Moreover, the thicker film indicated the higher intensity than thinner one. The difference of the remanent polarization (2Pr) at 0 V is decreased gradually from 10.19 to $5.7{\mu}C/cm^2$ as the thickness decrease from 140 to 70 nm. However, when the thickness decreased to 50 nm, the 2Pr rapidly drop to $1.6{\mu}C/cm^2$ so the minimum critical thickness might be at least 70 nm for device. Both different thickness films, 70 and 140 nm, indicated that the characteristic of current density-voltage was measured for $10^{-6}{\sim}10^{-7}A/cm^2$ below 15 V and the thicker film maintained relatively lower current density than thinner one. From these results, we can expect that the electrical properties for the devices particularly ferroelectric thin film transistor using PVDF-TrFE copolymer were able to be on the trade-off relationship between the remanent polarization with the bias voltage and the leakage current.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.60-73
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• 1997

By introducing a compressive-strained quanternary InGaAsP quantum-wells instead of a conventional ternary InGaAs quantum-wells in 1.55.mu.m DFB-LD, the lasing performances canb e improved and the problems caused by the thickness non-uniformity and the compositional abruptness among the hetero-interpaces canb e relaxed. In this paper, we investigated an iptimum InGaAsP/InGaAsP multiple-quantum-well(MQW) structure as an active layer in a direct-modulated 1.55.mu. DFB-LD from the view point of threshold current, chirping charcteristics, and resonance frequency. The optimum compressive-strained MQW structure was revealed as InGaAsP/InGaAsP structure with strain amount of about 1.2%, number of wells $N_{w}$ of 7, well width $L_{w}$ of 58.agns.. The threshold current density J of 500A/c $m^{2}$, the linewidth enhancement factor a of 1.8, and differential resonance frequency of d $f_{r}$/d(I-I)$^{1}$2/=2GHz/(mA)$^{1}$2/(atI=2 $I_{th}$) were expected in 1.55.mu.m .gamma./4-shifted DFB-LD with the cavity length of 400.mu.m long and kL value of 1.25. These values are considerably improved ones compared to those of 1.55um DFB-LD with InGaAs/InGaAsP MQW which have enhancement factor and the resonance frequence frequency by the detuning of lasing wavelength and gain-peak wavelength. It was found that the linewidth enhancement factor of 20% and differential resonance frequency of 35% without the degradation of the threshold current density could be enhanced in the range of -15nm~-20nm detuning which can be realized by controlling the thickness and Incomposition of InGaAsP well. well.and Incomposition of InGaAsP well. well.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.1049-1054
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• 1998

The LiCo$O_2$ powder was synthesized by a solution phase reaction. This shows a high (003) peak intensity and low (104) or (101) peak intensities in X-ray diffraction spectra. The LiCo$O_2$/Li cell shows an initial discharge capacity of 102.9mAh/g and an average discharge potential or 3.877V at a current density of 50mA/g between 3.0~4.2V. The peaks of dQ/dV plot are associated with Li ion intercalation/deintercalation reaction. To evaluate the cycleability of an actual battery system, cylindrical lithium ion cell was manufactured using graphitized MPCF anode and LiCoO$_2$ cathode. After 100th cycle, this cel maintains 80% capacity of 10th cycle value. The LiCoO$_2$/MPCF cell has a high discharge voltage of 3.6~3.7V and a good cycle life performance on cycling between 4.2~2.7V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.58-61
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• 2001

Metal-insulator-semiconductor (MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/cm$^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8V, 50% duty cycle) in the 500kHz.

• Journal of the Korean Chemical Society
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• v.15 no.6
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• pp.347-352
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• 1971

The variations of the positive and negative electrode potentials, and of internal pressure were measured during the charge of the sealed type Ni-Cd cell. Both polarization characteristics of a paste type Cd-electrode as a gas diffusion electrode in 30% KOH solution and the effects of active carbon electrode as an oxygen consuming auxiliary electrode of the Ni-Cd cell on the charging characteristics of the cell were studied. Peak voltage at the end of charge of the cell is ascribed to the peak at the negative electrode potential, which is due to the concentration polarization by the lack of $Cd^{++}$ ion and oxygen concentration. And the recovery of the negative electrode potential is resulted from depolarization by the increasing diffusion limiting current density with the increasing oxygen pressure. The active carbon electrode was effective as an oxygen consuming auxiliary electrode. The internal pressure of the cell could be maintained below 200mmHg even at one hour rate charge and overcharge by the use of active carbon electrode as an auxiliary electrode.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1568-1569
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• 2006

An electric probe is a conductor inserted into the plasma, by which plasma density and electron temperature can be deduced from the collected current (I) versus applied voltage (V) to the probe. In RF plasma the I-V characteristics of electric probe is distorted due to the RF fluctuation of plasma potential, so that it is hard to measure the real plasma parameters, especially the electron temperature. To eliminate the RF fluctuation, several compensation methods are developed such as RF compensation probe, peak-to-peak method, asymmetric double probe. By comparing proposed methods, a suitable method is to be introduced in determining electron temperatures in RF plasma.

• Current Optics and Photonics
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• v.5 no.2
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• pp.141-146
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• 2021

We have evaluated the suppression effect of atmospheric-turbulence-induced optical scintillation in terrestrial free-space optical (FSO) communication systems using a gain-saturated erbium-doped fiber amplifier (EDFA). The variation of EDFA output signal power has been measured with different amounts of gain saturation and modulation indices of the optical input signal. From the measured results, we have found that the peak-to-peak power variation was decreased drastically below 2 kHz of modulation frequency, in both 3-dB and 6-dB gain compression cases. Then, the power spectral density (PSD) of optical scintillation has been calculated with Butterworth-type transfer function. In the calculation, different levels of atmospheric-turbulence-induced optical scintillation have been taken into account with different values of the Butterworth cut-off frequency. Finally, the suppression effect of optical scintillation has been estimated with the measured frequency response of the EDFA and the calculated PSD of the optical scintillation. From our estimated results, the atmospheric-turbulence-induced optical scintillation could be suppressed efficiently, as long as the EDFA were operated in a deeply gain-saturated region.