• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.1-4
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• 2008

Fuel cells have the potential of providing several times higher energy storage densities than those possible using current state-of-the-art lithium-ion batteries, but current energy density of fuel cell system is not better than that of lithium-ion batteries. To achieve the high energy density, volume and weight of fuel cell system need to be reduced by miniaturizing system components such as stack, fuel tank, and balance-of-plant. In this paper, the thin flexible PCB (Printed circuit board) is used as a current collector to reduce the stack volume. Two end plates are made from light weight aluminum alloy plate. The plate surface is wholly oxidized through the anodizing treatment for electrical insulation. The opening rate of cathode plate hole is optimized through unit cell performance measurement of various opening rates. The performances are measured at room temperature and ambient pressure condition without any repulsive air supply. The active area of MEA is 10.08 $cm^2$ and active area per a unit cell is 1.68 $cm^2$. The peak power density is about 210 mW/$cm^2$ and the air-breathing planar stack of 2 Wis achieved as a small volume of 18 cc.

• Journal of environmental and Sanitary engineering
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• v.21 no.4 s.62
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• pp.49-60
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• 2006

The ion exchange resins have been synthesized from chlormethyl styrene - 1,4 - divinylbenzene(DVB) with 1%, 2%, 4% and 8%-crosslinking and 1-aza-18-crown-6 macrocyclic ligand by copolymerization method. Content of chlorine in styrene-DVB copolymer was decreased as crosslink increased and it is because as crosslink increased 1%, 2%, 4% and 8% DVB content increased and crosslink density increased and cavity was reduced. Functional group of resin almost disappeared as C-C1 peak around $700cm^{-1}$ was substituted with 1-aza-18-C-6 macrocyclic ligand and new peak of C-N around $1020cm^{-1}$ appeared, so it was confirmed that styrene-DVB copolymer and ligand were compounded. As crosslink increased in the analysis of element contents, it resulted in the reduction of nitrogen content and it is because as crosslink increased, it led to the reduction of chlorine content in the process of substitution reaction and it affected macrocyclic ligand substituted. Thermo analysis curve of functional synthetic resin decomposed three part of 1-aza-18-C-6, styrene, and DVB. Form of functional synthetic resin showed distortion of its particles as macrocyclic ligand was introduced to styrene-DVB copolymer and hydrogen of ligand caused substitution with chlorine element of styrene molecule.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.83-83
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• 1999

본 연구에서는 Auger Elecrtron Spectroscopy (AES) 장비를 이용하여 Silicone Wafer 표면에 BF 이온을 주입시킨 후 Dopping 농도 및 Implantation 에너지에 따른 Si KLL Peak의 변화를 관찰하였다. 또한 PVD Ti 계열 화학물의 시료에 대하여 Peak의 Shape 변화를 관찰하였다. 1)Dopping 농도 및 Implantation 에너지에 따른 Si KLL Peak의 변화 관찰 일반적으로 Silicone 기판에 Arsenic(3가)을 Dopping 하였을 경우, Si KLL Peak의 Kinetic Energy 값은 순수 Si Peak보다 더 작은 값으로 Shift 하며, Boron (5가)을 Dopping하였을 경우에는 더 큰 값으로 Shift 한다. 이론적으로 N-type Si의 에너지 차이는 약 1.0eV로 보고되어 있으며, AES를 이용하여 실험적으로 측정된 값은 약 0.6eV정도로 알려져 있다. 이러한 차이는 Dopping 농도에 따라 Valance Band의 에너지 값이 변화하기 때문이라고 알려져 있다. 본 연구에서는 BF2를 Si에 이온 주입하여 입사 에너지 및 dose 량에 따른 Si KLL Peak의 변화를 관찰하였다. 그림1과 같이 Si KLL Peak는 Implantation Energy가 작을수록 Kinetic Energy가 높은 곳으로 Shift 한다. 이는 LOw Energy로 이온 주입하면, Projected Range (Rp)가 High Energy로 이온 주입할 때보다 작기 때문이며, 이 결과를 Secondary Ion Mass Spectroscopy (SIMS) 및 TRIM simulation을 이용하여 확인하였다. 또한 표면에서의 전자 Density의 변화와 Implantation energy와의 관계를 시료의 표면에서 반사되어 나오는 전자의 에너지 손실(Reflected Electron Energy Loss Spectroscopy:REELS)을 통하여 고찰하였다. 2) PVD Ti 계열화합물의 시료에 대한 peak의 shape 가 변화하며, TiL3M23V (Ti2) 및 TiL3M23M23 (Til) Peak의 Intensity Ratio가 변화한다. 따라서 본 연구에서는 그림 2와 같이 Ti 결합 화합물에서의 Ti Auger Peak의 특성 에너지 값과 Peak Shape를 관찰하여, AES를 이용하여 Ti 계열의 화합물에 대한 Chemical state 분석의 가능성을 평가하였다.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.32-35
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• 2013

In this paper, a manufacturing process was developed for fabricating high-quality AlGaN/GaN high electron mobility transistors (HEMTs) on silicon carbide (SiC) substrates. Various conditions and processing methods regarding the ohmic contact and pre-metal-deposition $BCl_3$ etching processes were evaluated in terms of the device performance. In order to obtain a good ohmic contact performance, we tested a Ti/Al/Ta/Au ohmic contact metallization scheme under different rapid thermal annealing (RTA) temperature and time. A $BCl_3$-based reactive-ion etching (RIE) method was performed before the ohmic metallization, since this approach was shown to produce a better ohmic contact compared to the as-fabricated HEMTs. A HEMT with a 0.5 ${\mu}m$ gate length was fabricated using this novel manufacturing process, which exhibits a maximum drain current density of 720 mA/mm and a peak transconductance of 235 mS/mm. The X-band output power density was 6.4 W/mm with a 53% power added efficiency (PAE).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.298-303
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• 2003

Bi$_4$-$_{x}$EU$_{x}$Ti$_3$O$_{12}$ (BET) thin films were etched by inductively coupled CF$_4$/Ar plasma. We obtained the maximum etch rate of 78 nm/min at the gas mixing ratio of CF$_4$(10%)/Ar(90%). The variation of volume density for F and Ar atoms are measured by the optical emission spectroscopy. As CF$_4$increased in CF$_4$/Ar plasma, the emission intensities of F increase, but Ar atoms decrease, which confirms our suggestion that emission intensity is proportional to the volume density of atoms. From X-ray photoelectron spectroscopy, the intensities of the Bi-O, the Eu-O and the Ti-O peaks are changed. By pure Ar plasma, intensity peak of the oxygen-metal (O-M : TiO$_2$, Bi$_2$O$_3$, Eu$_2$O$_3$) bond was seemed to disappear while the intensity of pure oxygen peak showed an opposite tendency. After the BET thin films was etched by CF$_4$/Ar plasma, the peak intensity of O-M bond increase slowly, but more quickly than that of peak belonged to pure oxygen atoms due to the decrease of Ar ion bombardment. Scanning electron microscopy was used to investigate etching Profile. The Profile of etched BET thin film was over 85$^{\circ}$./TEX>.

• Nuclear Engineering and Technology
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• v.52 no.11
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• pp.2585-2593
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• 2020

Swift heavy ion (SHI) beam irradiation can generate desirable defects in materials by transferring sufficient energy to the lattice that favours huge possibilities in tailoring of materials. The effect of Ag¹⁵⁺ ion irradiation with energy 200 MeV on spray deposited V₂O₅ thin films of thickness 253 nm is studied at various ion doses from 5 × 10¹¹ to 1 × 10¹³ ions/㎠. The XRD results of pristine film confirmed orthorhombic structure of V₂O₅ and its average crystallite size was found to be 20 nm. The peak at 394 cm^-1 in Raman spectra confirmed O-V-O bonding of V₂O₅, whereas 917 cm^-1 arise because of distortion in stoichiometry by a loss of oxygen atoms. Raman peaks vanished completely above the ion fluence of 5 × 10¹² ions/㎠. Optical studies by UV-Vis spectroscopy shows decrement in transmittance with an increase in ion fluence up to 5 × 10¹² ions/㎠. The red shift is observed both in the direct and indirect band gaps until 5 × 10¹² ions/㎠. The surface topography of the pristine film revealed sheath like structure with randomly distributed spherical nano-particles. The roughness of film decreased and the density of spherical nanoparticles increased upon irradiation. Irradiation improved the conductivity significantly for fluence 5 × 10¹¹ ions/㎠ due to band gap reduction and grain growth.

• Journal of the Korean Electrochemical Society
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• v.2 no.2
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• pp.93-97
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• 1999

From the anodic peak currents of cyclic voltammograms for Ag(I)/Ag(II) couple obtained with the variation of nitric acid concentration, Ag(I) concentration and solution temperature at a Pt electrode in concentrated nitric acid solutions, the diffusion coefficients of Ag(I) ion were evaluated to estimate the limiting current density of Ag(II)-mediated electrochemical oxidation (MEO) process, which has been effectively used for the complete destruction of hazardous organic materials. The results showed that, due to the water decomposition reaction which occurred simultaneously with the Ag(I) ion oxidation, background subtractions for the cyclic voltammograms were required to estimate the correct peak currents. The empirical relationship for the diffusion coefficient of Ag(I) was suggested as a function of solution viscosity and temperature.

• Progress in Superconductivity
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• v.11 no.1
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• pp.8-12
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• 2009

We investigated the effects of the irradiation of light-ions on the superconducting $MgB_2$ thin films fabricated by using HPCVD. Deuterium and helium ions were irradiated on $MgB_2$ thin films by various doses, from $1{\times}10^{10}cm^{-2}\;to\;8{\times}10^{15}cm^{-2}$. During these experiments some reasonable results and unpredictable results have been obtained. The reasonable results are that the peak of the reduced maximum pinning force shifts by increasing the pinning sites in $MgB_2$ films and the slightly change of critical current density of films. We obtained some unusual results, which are the increasing of the transition temperature and the change of residual resistance ratio. Among the data of deuterium and helium ion irradiation experiments, the results of helium ion irradiation have most notable points so we will discuss mainly about helium irradiation experiments.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.475-476
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• 2006

Recently, the demand for high density MOSFET arrays are increasing. In implementing 3-D devices to this end, it is inevitable to ion-implant vertically in order to avoid screening effects caused by high silicon fins. In this study, the dependency of drain current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak (PCP) and the doping gradient are varied to look into the effects on primary current characteristics. Through these analyses, criteria of ion-implantation for 3-D devices are established.