• Korean Journal of Materials Research
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• v.18 no.10
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• pp.535-541
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• 2008

Growth behavior of InGaN/GaN self-assembled quantum dots (QDs) was investigated with respect to different growth parameters in low pressure metalorganic chemical vapor deposition. Locally formed examples of three dimensional InGaN islands were confirmed from the surface observation image with increasing indium source ratio and growth time. The InGaN/GaN QDs were formed in Stranski-Krastanow (SK) growth mode by the continuous supply of metalorganic (MO) sources, whereas they were formed in the Volmer-Weber (V-W) growth mode by the periodic interruption of the MO sources. High density InGaN QDs with $1{\sim}2nm$ height and $40{\sim}50nm$ diameter were formed by the S-K growth mode. Dome shape InGaN dots with $200{\sim}400nm$ diameter were formed by the V-W growth mode. InN content in InGaN QDs was estimated to be reduced with the increase of growth temperature. A strong peak between 420-460 nm (2.96-2.70 eV) was observed for the InGaN QDs grown by S-K growth mode in photoluminescence spectrum together with the GaN buffer layer peak at 362.2 nm (3.41 eV).

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.10
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• pp.66-72
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• 2007

This paper describes the characteristics of power loss and leakage currents flowing through new and used 18[kV] zinc oxide(ZnO) surge arrester under the mixed DC and AC voltages. The mixed DC and AC voltage generator of 50[kV] peak was designed and fabricated. The I-V curves of ZnO surge arrester were measured as a function of the voltage ratio K. The I-V curves under the mixed DC and AC voltages lay between the pure DC and AC characteristics, and the cross-over phenomenon in both I-V curves and R-V curves was observed at the low current region. As a result, the increase of DC component in the mixed voltages causes the increase of resistive component of total leakage current of ZnO surge arrester. Also, in the case of same applied voltage, the leakage current flowing through the used ZnO surge arrester was higher than that of the new ZnO surge arrester.

• Journal of the Korean institute of surface engineering
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• v.41 no.4
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• pp.129-133
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• 2008

Nitrogen and aluminum codoped ZnO(NAZO) thin films were grown on glass substrates with changing the nitrogen flow ratio by radio-frequency magnetron sputtering. The structural, optical, and electrical properties of the NAZO films were investigated. The surface morphologies and the structural properties of the thin films were analyzed by using the X-ray diffraction and scanning electron microscopy. The NAZO thin film, deposited at nitrogen flow ratio of 0%, showed a strongly c-axis preferred orientation and the lowest resistivity of $3.2{\times}10^{-3}{\Omega}cm$. The intensity of ZnO(002) diffraction peak was decreased gradually with increasing the nitrogen flow ratio. The optical properties of the films were measured by UV-VIS spectrophotometer and the optical transmittances for all the samples were found to be an average 90% in the visible range. Based on the transmittance value, the optical bandgap energy for the NAZO thin film deposited at nitrogen flow ratio of 0% was determined to be 3.46 eV. As for the electrical properties, the carrier concentration and the hall mobility were decreased, but the electrical resistivity was increased as the nitrogen flow ratio was increased.

• Transactions on Electrical and Electronic Materials
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• v.4 no.1
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• pp.7-10
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• 2003

Single phase CuInS$_2$ thin film with the strongest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second strongest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$was well made with chalcopyrite structure at substrate temperature of 70$^{\circ}C$. annealing temperature of 250$^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 Um when the Cu/In composition ratio of 1.03, where the lattice constant of a and c were 5.60${\AA}$ and 11.12${\AA}$, respectively. The Cu/In stoichiometry of the single-phase CuInS$_2$thin films was from 0.84 to 1.3. The film was p-type when tile Cu/In ratio was above 0.99 and was n-type when the Cu/In was below 0.95. The fundamental absorption wavelength, absorption coefficient and optical band gap of p-type CuInS$_2$ thin film with Cu/In=1.3 were 837nm, 3.OH 104 cm-1 and 1.48 eV, respectively. The fundamental absorption wavelength absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film with Cu/In=0.84 were 821 nm, 6.0${\times}$10$^4$cm$\^$-1/ and 1.51 eV, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.4
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• pp.154-158
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• 2021

The optical transmittance of Mn-doped SnO₂ monolayer film increased gradually from 80.9 to 85.4 % at 550 nm wavelengths upon increasing the O₂/Ar+O₂ concentration rate from 0 to 7.9 % and the band gap energy changed from 3.0 to 3.6 eV. The resistivity tended to decrease from 3.21 Ω·cm to 0.03 Ω·cm, reaching a minimum at 2.7 %, and then gradually increased from 0.03 to 52.0 Ω·cm at higher O₂/Ar+O₂ gas concentration ratio. Based on XPS spectra analysis, the Sn 3d_5/2 peak of Mn-doped SnO₂ single layer shifted slightly from 486.40 to 486.58 and O_1s peak also shifted from 530.20 to 530.33 eV with increase the O₂/Ar+O₂ concentration ratio. Therefore, the XPS spectra results indicate that a multiphase with SnO and SnO₂ coexisted in the sputtered Mn-doped SnO₂ monolayer film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.883-888
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• 2007

Investigation of improving the properties of UV detector which uses the wide bandgap of ZnO are under active progress. The present study focused on the design and fabrication of i-ZnO/p-inversion $layer/n^--Si$ Epi. which is characterized with very thin p-type inversion layer for UV detectors. The i-ZnO thin film for achieving p-inversion layer which was grown by RF sputtering at $450^{\circ}C$ and then annealed at $400^{\circ}C$ in $O_2$ gas for 20 min shows good intrinsic properties. High (0002) peak intensity of the i-ZnO film is shown on XRD spectrum and it is confirmed by XPS analysis that the ratio of Zn : O of the i-ZnO film is nearly 1 : 1. Measurement shows high transmission of 79.5 % in UV range (< 400 nm) for the i-ZnO film. Measurement of $V_r-I_{ph}$ shows high UV photo-current of 1.2 mA under the reverse bias of 30 V.

• Korean journal of applied entomology
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• v.45 no.3 s.144
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• pp.317-325
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• 2006

According to the preceding survey on insect pests of the green perilla, Perilla frutescens var. japonica HARA, The major pests were Aphis egomae Shinji, Pyrausta panopealis (Walker), Tetranychus urticae Koch, Polyphagotarsonemus lotus Banks, Tetranychus kanzawai Kishida at Guemsan, Chungnam, 2004. Aphis egomae causes nearly 100% injury of the green perilla in uncontrolled green houses. A field study was conducted to estimate economic injury levels (EILs) and control thresholds (CTs) for A. egomae injuring green perilla in green houses. Different densities of A. egomae ranged from 1 to 80 aphids per 100 plants in early inoculation. The mean injurying rate of plant was 2.4% to 40.5% at the end of June at differently inoculated levels. The economic loss time calculated by the ratio of cost managing aphid to market price (C/V) (C: cost managing aphid, V: Market price) in early season (from May to 13. June) was 5.8% and in peak season (from 13. June to 30. June) was 9.3%. Economic injury level in early and peak season was 5.3 aphids per plant and economic injury levels in peak season were 0.6 aphids per plant and 7.6% injured rate of plant. The control thresholds calculated by 80% level of economic injury level in peak season were 0.5aphids per plant and 6.1% injury rate of plant, respectively.

• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.6
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• pp.486-494
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• 2012

In this paper, we proposes the three-phase embedded Z-source inverter consisting of the three embedded Z-source converters and it's the output voltage control method. Each embedded Z-source converter can produce the bipolar output capacitor voltages according to duty ratio D such as single-phase PWM inverter. The output AC voltage of the proposed system is obtained as the difference in the output capacitor voltages of each converter, and the L-C output filter is not required. Because the output AC voltage can be stepped up and down, the boost DC converter in the conventional two-stage inverter is unnecessary. To confirm the validity of the proposed system, PSIM simulation and a DSP based experiment were performed under the condition of the input DC voltage 38V, load $100{\Omega}$, and switching frequency 30kHz. Each converter is connected by Y-connection for three-phase loads. In case that the output phase voltage is the same $38V_{peak}$ as the input DC voltage and is the 1.5 times($57V_{peak}$), the simulation and experimental results ; capacitor voltages, output phase voltages, output line voltages, inductor currents, and switch voltages were verified and discussed.

• Journal of the Korean Ceramic Society
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• v.48 no.4
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• pp.303-306
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• 2011

[ $V_2O_5$ ]doped Karrooite pigments were synthesized by the solid state method to get stabilized brown pigment in oxidation and reduction atmosphere. Optimum substitution condition and limited dopant with $V_2O_5$ for Karrooite pigment was investigated. With calcination at $1250^{\circ}C{\sim}1400^{\circ}C$, compositions were designed varying $V_2O_5$ molar ratio by increasing 0.02mole to the formula $Mg_1-xTi_2-xM_{2x}O_5$(x = 0.01~0.09 mole). Synthesized pigments were analyzed by XRD, Raman spectroscopy and UV-vis. When $V_2O_5$ was doped from 0.01 to 0.05 mole, single phase of Karrooite was observed at temperature $1300^{\circ}C$ and soaking time 4h by Raman spectroscopy. However, it was found that excess $VO_2$ peak appeared with 0.07 and 0.09 mole of $V_2O_5$ doped to $MgTi_2O_5$. This result indicated that the maximum limit of solid solution is 0.05 mole $V_2O_5$. Karrooite pigments were applied as a ceramic pigment to achieve brown colors in lime magnesia glaze and lime barium graze at both of oxidation and reduction atmosphere. CIE color coordinates are $L^*$ = 40.34, $a^*$ = 9.94, $b^*$ = 21.40 in lime magnesia glaze.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.799-808
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• 1995

Transparent conductive films of aluminium doped zinc oxide (AZO) have been prepared by using the DC magnetron sputtering with the ZnO : Al (Al2O3 2 wt%) oxide target oriented to c-axis. Electrical and optical properties depended upon the O2/Ar gas ratio. The optical transmittance and sheet resistance of the AZO coated glass was 60~65% and 75Ω/$\square$, respectively at the O2/Ar gas ratio of 0. With the increase of the oxygen partial pressure to 2.0$\times$10-2, they were increased to the values of 81% and 1kΩ/$\square$, respectively. The films with the resistivities of 1.2~1.4$\times$10-3 Ω.cm, mobilities of 11~13 $\textrm{cm}^2$/V.sec and carrier concentrations of 3.5$\times$1020~4.0$\times$1020/㎤ were produced at the optimum O2/Ar gas ratio, which was 0.5$\times$10-2~1.0$\times$10-2. According to XRD analysis, the films have only one peak corresponding to the (002) plane, which indicates that there is a strong preferred orientation of the films. The grain size of ZnO films were calculated to 200~320 $\AA$, which was increased with the O2/Ar gas ratio and Ar gas flowrate.