• 제목/요약/키워드: Peak A/V Ratio

검색결과 193건 처리시간 0.016초

공명 투과 구조의 MOCVD 성장 및 특성에 관한 연구 (A Study on the MOCVD Growth and Characterization of Resonant Tunneling Structures)

  • 류정호;서광석
    • 한국통신학회논문지
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    • 제18권7호
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    • pp.1036-1043
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    • 1993
  • 대기압 MOCVD방법으로 이중 장벽 구조의 공명 투과 소자를 제작하여 상온과 77K에서의 부저항 특성을 특정하였다. GaAs 양자 우물과 spacer, AIGaAs 장벽을 사용하여 성장온도를 변화시켜 공명 투과 소자를 제작한 결과 상온에서 2.35, 77K에서 15.3의 높은 peak-to-valley 전류비를 얻었다 컴퓨터 모의 실험에서는 coherent 투과만을 고려하여 peak 전류를 계산해서 실험치와 잘 일치하는 것을 알 수 있었다. AlGaAs 장벽에 InGaAs 양자 우물과 spacer를 사용하여 전자의 공급량을 증가시킨 구조에서는 상온에서 8.6KA/cm의 높은 peak 전류와 4.0의 큰 peak-to-valley 전류비를 얻었다.

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ACCRETION FLOW AND DISPARATE PROFILES OF RAMAN SCATTERED O VI λλ 1032, 1038 IN THE SYMBIOTIC STAR V1016 CYGNI

  • Heo, Jeong-Eun;Lee, Hee-Won
    • 천문학회지
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    • 제48권2호
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    • pp.105-112
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    • 2015
  • The symbiotic star V1016 Cygni, a detached binary system consisting of a hot white dwarf and a mass-losing Mira variable, shows very broad emission features at around 6825 Å and 7082 Å, which are Raman scattered O vi λλ 1032, 1038 by atomic hydrogen. In the high resolution spectrum of V1016 Cyg obtained with the Bohyunsan Optical Echelle Spectrograph these broad features exhibit double peak profiles with the red peak stronger than the blue counterpart. However, their profiles differ in such a way that the blue peak of the 7082 feature is relatively weaker than the 6825 counterpart when the two Raman features are normalized to exhibit an equal red peak strength in the Doppler factor space. Assuming that an accretion flow around the white dwarf is responsible for the double peak profiles, we attribute this disparity in the profiles to the local variation of the flux ratio of O vi λλ 1032, 1038 in the accretion flow. A Monte Carlo technique is adopted to provide emissivity maps showing the local emissivity of O vi λ1032 and O vi λ1038 in the vicinity of the white dwarf. We also present a map indicating the differing flux ratios of O vi λλ 1032 and 1038. Our result shows that the flux ratio reaches its maximum of 2 in the emission region responsible for the central trough of the Raman feature and that the flux ratio in the inner red emission region is almost 1. The blue emission region and the outer red emission region exhibit an intermediate ratio around 1.5. We conclude that the disparity in the profiles of the two Raman O vi features strongly implies accretion flow around the white dwarf, which is azimuthally asymmetric.

저준위 토양시료를 이용한 콤프턴 연속체 억제의 측정 및 몬테카롤로 시뮬레이션 평가 (Measurement and Monte Carlo Simulation evaluation of a Compton Continuum Suppression with low level soil Sample)

  • 장은성;이효영
    • 한국방사선학회논문지
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    • 제12권2호
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    • pp.123-131
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    • 2018
  • 본 연구는 점 선원인 $^{60}Co$, $^{137}Cs$ 및 혼합부피선원을 이용하여 피크 대 컴프턴 비율, 연속체 배경 스펙트럼을 감소시키기 위해 저 에너지 peak부터 고 에너지 peak에서 측정된 측정치와 PENELOPE와 비교하였다. 또한, 저에너지 부근에서의 변화를 통해 후방산란, 컴프턴 단(compton edge)의 효율 변화를 PENELOPE와 비교하였다. 혼합부피 선원에서 나온 결과를 토양시료에 적용하여 억제와 비 억제(unsuppressed)모드에서 토양시료의 최소검출한계치가 얼마큼 감소하였는지 확인하고자 한다. $^{60}CO$(1,173 keV)의 저에너지 영역의 컴프턴 억제가 상당히 되었으며, $^{137}Cs$(661 keV) 피크에 대한 Compton edge의 RF는 2.8이다. 특히, $^{60}Co$ 선원은 1,173.2keV와 1,332.5 keV의 coincidence 감마선을 방출하므로 컴프턴 억제는 대략 21% 감소하였다. 60Co 선원에서 방출되는 1,173keV와 1,332keV의 compton edge의 RF는 3.2, 3.4였으며 피크대 컴프턴 edge비율은 8:1로 향상되었다. 그리고, PENELOPE와 비교했을 때 불확도는 2% 이내로 잘 일치하였다. Compton unsuppressed 모드에서 661 keV, 1,173 keV 및 1,332 keV의 MDA 값은 각각 0.535, 0.173 및 0.136Bq/kg이었으나, Compton suppressed 모드에서는 0.121, 0.00826 및 0.00728B/kg로 감소하였다. 따라서, Compton suppres sed는 배후방사능과 검출기 자체에 함유된 방사능을 줄일 수 있었다.

직류와 60 Hz 교류가 중첩된 전압에 대한 산화아연 피뢰기 소자의 누설전류 특성 (Characteristics of ZnO Arrester Blocks Leakage Currents under Mixed Direct and 60 Hz Alternating Voltages)

  • 이복희;강성만;박건영
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제54권1호
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    • pp.23-29
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    • 2005
  • This paper presents the characteristics of leakage currents flowing through ZinC Oxide(ZnO) surge arrester blocks under mixed direct and 60 Hz alternating voltages. A mixed voltage, in which an alternating voltage is superimposed upon a direct voltage, appears on the HVDC system network. The mixed direct and alternating voltage generator with a peak open-circuit of 10 kV was designed and fabricated. The leakage currents and V-I curves for the fine and used ZnO surge arrester blocks were measured as a function of the voltage ratio k, where the voltage ratio k is defined as the ratio of the peak of alternating voltage to the peak of the mixed voltages. The resistive component in the leakage current in the low conduction region is significantly increased with increasing the voltage ratio k. The V-I characteristic curves for the mixed voltages lies between the direct and alternating characteristics, and the cross-over phenomenon in the high conduction region was appeared.

Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics

  • Shin, Sunhae;Kang, In Man;Kim, Kyung Rok
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권6호
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    • pp.546-550
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    • 2013
  • We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

1.5V 2mW 96dB Peak SNDR, 오디오용 $\sum\Delta$ Modulator 설계 (Design of a 1.5V 2mW 96dB Peak SNDR $\sum\Delta$ Modulator for Audio Applications)

  • 이강명;이상훈;박종태;유종근
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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    • pp.156-159
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    • 2000
  • This paper presents a low-voltage, low-power $\Sigma$Δ modulator for audio applications. It use a simple second-order fully-differential switched-capacitor structure with a sampling frequency of 12.5 MHz and oversampling ratio of 256. It operates from a single 1.5V Bower supply and dissipates 2 ㎽. Extensive simulations using 0.25 ${\mu}{\textrm}{m}$ CMOS Process parameters show that it achieves 96㏈ peak SNDR in a 22 KHz bandwidth.

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The effects of vertical earthquake motion on an R/C structure

  • Bas, Selcuk;Kalkan, Ilker
    • Structural Engineering and Mechanics
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    • 제59권4호
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    • pp.719-737
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    • 2016
  • The present study investigated the earthquake behavior of R/C structures considering the vertical earthquake motion with the help of a comparative study. For this aim, the linear time-history analyses of a high-rise R/C structure designed according to TSC-2007 requirements were conducted including and excluding the vertical earthquake motion. Earthquake records used in the analyses were selected based on the ratio of vertical peak acceleration to horizontal peak acceleration (V/H). The frequency-domain analyses of the earthquake records were also performed to compare the dominant frequency of the records with that of the structure. Based on the results obtained from the time-history analyses under the earthquake loading with (H+V) and without the vertical earthquake motion (H), the value of the overturning moment and the top-story vertical displacement were found to relatively increase when considering the vertical earthquake motion. The base shear force was also affected by this motion; however, its increase was lower compared to the overturning moment and the top-story vertical displacement. The other two parameters, the top-story lateral displacement and the top-story rotation angle, barely changed under H and H+V loading cases. Modal damping ratios and their variations in horizontal and vertical directions were also estimated using response acceleration records. No significant change in the horizontal damping ratio was observed whereas the vertical modal damping ratio noticeably increased under H+V loading. The results obtained from this study indicate that the desired structural earthquake performance cannot be provided under H+V loading due to the excessive increase in the overturning moment, and that the vertical damping ratio should be estimated considering the vertical earthquake motion.

Simulating the impact of iodine as a contrast substance to enhance radiation to the tumor in a brain x-rayphototherapy

  • M. Orabi
    • Nuclear Engineering and Technology
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    • 제55권5호
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    • pp.1671-1676
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    • 2023
  • The influence of adding iodine as a contrast substance to elevate radiation in a tumor is studied using simulation techniques of Monte-Carlo. The study is carried on a brain cancer by adopting an unsophisticated head phantom. The ionizing radiation source is an external beam of x-rays with energy range of a few tens of keV. The expected radiation dose increment due to adding the iodine is investigated by comparing the radiation in the tumor after and before adding the iodine and calculating the ratio between the two doses. Several concentrations of the contrast substance are used to quantify its impact. The change of the dose increment with the source energy is also examined. It is found that the radiation elevation in the tumor tends to saturate with increasing the iodine concentration, and for the studied domain of energies (30 keV-100 keV), the radiation dose enhancement factors (RDEF) for the different iodine concentrations (1%-9%) show peaked curves, with the peak occurring between 60 keV and 70 keV. For the highest concentration studied, 9%, the peak value is almost 7.

델타-시그마 변조기의 1V 설계 (A Design of 1V Delta-Sigma Modulator)

  • 김정민;임신일;최종찬
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(5)
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    • pp.87-90
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    • 2002
  • This paper describes design technique of switched-capacitor 1V delta-sigma modulator. To solve the incomplete switching operation at low voltage, bootstrapping technique is used. For PMOS input pair of 1V operational amplifier, simple common mode level down technique is used. Designed 2nd order single loop modulator has an oversampling ratio of 64 and obtains a peak SNR of 71dB, a dynamic range of 73 dB with the power consumption of 350uW at 1V power supply.

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직류 마그네트론 스퍼터링법으로 제조된 $TiO_2$ 박막의 구조적, 광학적 특성 및 광촉매 효과 (The structural, optical and photocatalytic properties of $TiO_2$ thin films fabricated by do magnetron sputtering)

  • 임정명;양현훈;김영준;박중윤;정운조;박계춘
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.420-423
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    • 2003
  • [ $TiO_2$ ] thin films were fabricated by DC magnetron sputtering system at by controlling deposition times, ratios of $Ar:O_2$ partial presser ratio and substrate conditions. And the surface, cross-section morphology, microstructure, and composition ratio of the films were analyzed by FE-SEM, TEM and XPS. Besides, the optical absorption and transmittance of the $TiO_2$ films were measured by a UV-VIS-NIR Spectrophotometer, and photocatalytic properties were studied by G C Analyzer & Data Analysis system. As the result, when $TiO_2$ thin film was made at deposition time of 120[min] and $Ar:O_2$ ratio of 60:40, the best structural and optical properties among many thin films could be accepted. The best results of properties were as follows: thickness; $360{\sim}370[nm]$, grain size; 40[m], gap between two peak binding energy, $5.8{\pm}0.05[eV]$ ($2p_{3/2}$ peak and $2p_{1/2}$ peak of Ti was show at $458.3{\pm}0.05[eV]$ and $464.1{\pm}0.05[eV]$ respectively), binding energy; $530{\pm}0.05\;[eV]$, opticalenergy band gap; 3.4[eV].

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