• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.7
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• pp.1036-1043
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• 1993

GaAs/AIGaAs resonant tunneling structures have been grown by atmospheric pressure MOCVD. Resonant tunneling diodes fabricated with the structure grown at 650t showed a high peak-to-valley (P/V) current ratio of 2.35 at room temperature. P/V current ratio increased to 15.3 at 77K. Numerically calculated peak current agrees well with the experimental result. Resonant tunneling diodes with AIGaAs as a barrier and InGaAs as a quantum well and a spacer layer yielded a high P/V current ratio of 4.0 and a peak current density of 8.6KA/c# at room temperature because of increased carrier supply.

• Journal of The Korean Astronomical Society
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• v.48 no.2
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• pp.105-112
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• 2015

The symbiotic star V1016 Cygni, a detached binary system consisting of a hot white dwarf and a mass-losing Mira variable, shows very broad emission features at around 6825 Å and 7082 Å, which are Raman scattered O vi λλ 1032, 1038 by atomic hydrogen. In the high resolution spectrum of V1016 Cyg obtained with the Bohyunsan Optical Echelle Spectrograph these broad features exhibit double peak profiles with the red peak stronger than the blue counterpart. However, their profiles differ in such a way that the blue peak of the 7082 feature is relatively weaker than the 6825 counterpart when the two Raman features are normalized to exhibit an equal red peak strength in the Doppler factor space. Assuming that an accretion flow around the white dwarf is responsible for the double peak profiles, we attribute this disparity in the profiles to the local variation of the flux ratio of O vi λλ 1032, 1038 in the accretion flow. A Monte Carlo technique is adopted to provide emissivity maps showing the local emissivity of O vi λ1032 and O vi λ1038 in the vicinity of the white dwarf. We also present a map indicating the differing flux ratios of O vi λλ 1032 and 1038. Our result shows that the flux ratio reaches its maximum of 2 in the emission region responsible for the central trough of the Raman feature and that the flux ratio in the inner red emission region is almost 1. The blue emission region and the outer red emission region exhibit an intermediate ratio around 1.5. We conclude that the disparity in the profiles of the two Raman O vi features strongly implies accretion flow around the white dwarf, which is azimuthally asymmetric.

• Journal of the Korean Society of Radiology
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• v.12 no.2
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• pp.123-131
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• 2018

This study compared PENELOPE with measured values from low energy peak to high energy peak to reduce peak to compton ratio and continuum background spectrum using $^{60}Co$, $^{137}Cs$ and mixed volume source. In addition, the change in backscattering and compton edge efficiency was compared with that of PENELOPE through changes in the vicinity of low energy. The results from the mixed volume source are applied to the soil samples to determine how much the minimum detection limits of the soil samples are reduced in the suppression and unsuppressed mode. The compton suppression of the low energy region of $^{60}CO$ (1,173 keV) was considerable, and the Compton edge RF for the $^{137}Cs$ (661 keV) peak was 2.8. In particular, the $^{60}Co$ source emits coincidence gamma rays of 1,173.2 keV and 1,332.5 keV, so compton inhibition was reduced by approximately 21%. RF of compton edges of 1,173 keV and 1,332 keV emitted from a $^{60}Co$ source was 3.2 and 3.4, and the peak to compton edge ratio was improved to 8: 1. And Compared with Penelope, the uncertainty was well within 2%. In compton unsuppressed mode, MDA values of 661 keV, 1,173 keV and 1,332 keV were 0.535, 0.173 and 0.136 Bq/kg, respectively, but decreased in compton suppressed mode to 0.121, 0.00826 and 0.00728 Bq/kg. Thus, Compton suppressed could reduce the background radioactivity and the radioactivity contained in the detector itself.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.23-29
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• 2005

This paper presents the characteristics of leakage currents flowing through ZinC Oxide(ZnO) surge arrester blocks under mixed direct and 60 Hz alternating voltages. A mixed voltage, in which an alternating voltage is superimposed upon a direct voltage, appears on the HVDC system network. The mixed direct and alternating voltage generator with a peak open-circuit of 10 kV was designed and fabricated. The leakage currents and V-I curves for the fine and used ZnO surge arrester blocks were measured as a function of the voltage ratio k, where the voltage ratio k is defined as the ratio of the peak of alternating voltage to the peak of the mixed voltages. The resistive component in the leakage current in the low conduction region is significantly increased with increasing the voltage ratio k. The V-I characteristic curves for the mixed voltages lies between the direct and alternating characteristics, and the cross-over phenomenon in the high conduction region was appeared.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.546-550
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• 2013

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.156-159
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• 2000

This paper presents a low-voltage, low-power $\Sigma$Δ modulator for audio applications. It use a simple second-order fully-differential switched-capacitor structure with a sampling frequency of 12.5 MHz and oversampling ratio of 256. It operates from a single 1.5V Bower supply and dissipates 2 ㎽. Extensive simulations using 0.25 ${\mu}{\textrm}{m}$ CMOS Process parameters show that it achieves 96㏈ peak SNDR in a 22 KHz bandwidth.

• Structural Engineering and Mechanics
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• v.59 no.4
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• pp.719-737
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• 2016

The present study investigated the earthquake behavior of R/C structures considering the vertical earthquake motion with the help of a comparative study. For this aim, the linear time-history analyses of a high-rise R/C structure designed according to TSC-2007 requirements were conducted including and excluding the vertical earthquake motion. Earthquake records used in the analyses were selected based on the ratio of vertical peak acceleration to horizontal peak acceleration (V/H). The frequency-domain analyses of the earthquake records were also performed to compare the dominant frequency of the records with that of the structure. Based on the results obtained from the time-history analyses under the earthquake loading with (H+V) and without the vertical earthquake motion (H), the value of the overturning moment and the top-story vertical displacement were found to relatively increase when considering the vertical earthquake motion. The base shear force was also affected by this motion; however, its increase was lower compared to the overturning moment and the top-story vertical displacement. The other two parameters, the top-story lateral displacement and the top-story rotation angle, barely changed under H and H+V loading cases. Modal damping ratios and their variations in horizontal and vertical directions were also estimated using response acceleration records. No significant change in the horizontal damping ratio was observed whereas the vertical modal damping ratio noticeably increased under H+V loading. The results obtained from this study indicate that the desired structural earthquake performance cannot be provided under H+V loading due to the excessive increase in the overturning moment, and that the vertical damping ratio should be estimated considering the vertical earthquake motion.

• Nuclear Engineering and Technology
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• v.55 no.5
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• pp.1671-1676
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• 2023

The influence of adding iodine as a contrast substance to elevate radiation in a tumor is studied using simulation techniques of Monte-Carlo. The study is carried on a brain cancer by adopting an unsophisticated head phantom. The ionizing radiation source is an external beam of x-rays with energy range of a few tens of keV. The expected radiation dose increment due to adding the iodine is investigated by comparing the radiation in the tumor after and before adding the iodine and calculating the ratio between the two doses. Several concentrations of the contrast substance are used to quantify its impact. The change of the dose increment with the source energy is also examined. It is found that the radiation elevation in the tumor tends to saturate with increasing the iodine concentration, and for the studied domain of energies (30 keV-100 keV), the radiation dose enhancement factors (RDEF) for the different iodine concentrations (1%-9%) show peaked curves, with the peak occurring between 60 keV and 70 keV. For the highest concentration studied, 9%, the peak value is almost 7.

• Proceedings of the IEEK Conference
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• 2002.06e
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• pp.87-90
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• 2002

This paper describes design technique of switched-capacitor 1V delta-sigma modulator. To solve the incomplete switching operation at low voltage, bootstrapping technique is used. For PMOS input pair of 1V operational amplifier, simple common mode level down technique is used. Designed 2nd order single loop modulator has an oversampling ratio of 64 and obtains a peak SNR of 71dB, a dynamic range of 73 dB with the power consumption of 350uW at 1V power supply.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.420-423
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• 2003

[ $TiO_2$ ] thin films were fabricated by DC magnetron sputtering system at by controlling deposition times, ratios of $Ar:O_2$ partial presser ratio and substrate conditions. And the surface, cross-section morphology, microstructure, and composition ratio of the films were analyzed by FE-SEM, TEM and XPS. Besides, the optical absorption and transmittance of the $TiO_2$ films were measured by a UV-VIS-NIR Spectrophotometer, and photocatalytic properties were studied by G C Analyzer & Data Analysis system. As the result, when $TiO_2$ thin film was made at deposition time of 120[min] and $Ar:O_2$ ratio of 60:40, the best structural and optical properties among many thin films could be accepted. The best results of properties were as follows: thickness; $360{\sim}370[nm]$, grain size; 40[m], gap between two peak binding energy, $5.8{\pm}0.05[eV]$ ($2p_{3/2}$ peak and $2p_{1/2}$ peak of Ti was show at $458.3{\pm}0.05[eV]$ and $464.1{\pm}0.05[eV]$ respectively), binding energy; $530{\pm}0.05\;[eV]$, opticalenergy band gap; 3.4[eV].