• 마이크로전자및패키징학회지
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• 제6권2호
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• pp.45-49
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• 1999

이온빔 보조 증착법을 이용하여 제작한 $SnO_2$박막을 기저 물질로한 가연성 센서에 catalyst로 ultra-thin Pd layer를 이온빔 스퍼터링으로 흡착시켰다. 가연성 기체의 센싱 메카니즘에서 Pd 촉매의 역할을 정확하게 조사하기 위해서 진공 및 공기 상에서 annealing 함으로서 Pd 촉매의 초기 산화 상태를 조절하였다. 촉매가 순수한 금속 Pd 클러스터 상태로 존재하는 $SnO_2$센서의 경우에는 PdO 클러스터가 있는 것에 비해 높은 감응성을 보였다. 이것은 PdO 클러스터가 표면 acceptor로 작용을 하는 것으로 생각되며 $SnO_2$로 부터 Pd sub-channel을 통해 전자를 받아 센서의 감도를 낮추고 응답시간을 늦추는 것으로 생각된다.

• 한국전기전자재료학회논문지
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• 제35권5호
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• pp.488-493
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• 2022

Generally, diamond-like carbon films (a-C:H, DLC) have been shown to have a low coefficient of friction, a high hardness and a low wear rate. Pd-doped C thin film was fabricated using a dual magnetron sputtering with two targets of graphite and palladium. Graphite target RF power was fixed and palladium target RF power was varied. The structural, physical, and surface properties of the deposited thin film were investigated, and the correlation among these properties was examined. The doping ratio of Pd increased as the RF power increased, and the surface roughness of the thin film decreased somewhat as the RF power increased. In addition, the hardness value of the thin film increased, and the adhesive strength was improved. It was confirmed that the value of the contact angle indicating the surface energy increases as the RF power increases. It was concluded that the increase in RF power contributed to the improvement of the physical properties of Pd-doped C thin film.

• 한국세라믹학회지
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• 제35권8호
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• pp.795-800
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• 1998

• 한국자기학회지
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• 제26권1호
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• pp.1-6
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• 2016

Pd은 단일 원소 금속 중에서 자기 감수율이 가장 크고 외부 환경에 따라 강자성 특성을 보이기도 한다. 본 논문은 자성 연구에 가장 적합한 FLAPW 방법을 사용하여 5-ML과 9-ML Pd(111) 박막의 자성을 계산하였다. 전자간 교환-상관 상호작용을 고려하기 위해 LDA와 GGA를 도입하여 두 계산 결과를 비교하였다. LDA 계산은 덩치 Pd이 상자성 상태가 바닥 상태임을 예측하여 실험과 일치하는 반면, GGA 계산은 덩치 Pd이 강자성을 갖는 것으로 잘못 예측하여 Pd 자성에 대해서는 LDA 계산이 더 신뢰할 수 있음을 알았다. 5-ML Pd(111) 박막에 대한 LDA 계산 결과에 의하면 상자성 상태가 바닥인 덩치 Pd과는 다르게 강자성 상태가 더 안정적이었다. 박막의 중앙에 위치한 Pd이 가장 큰 자기모멘트($0.273{\mu}_B$)를 가지며 중앙 Pd 층의 |m| = 1 상태가 덩치의 그것과 큰 차이가 있어 5-ML Pd(111) 박막의 강자성을 유발하는 데 주요 역할을 함을 알 수 있었다. 9-ML Pd(111) 박막은 상자성 상태가 강자성 상태에 비해 안정하였으나 두 상태 사이의 총에너지 차이가 거의 없고 유한한 자기모멘트를 안정적으로 가지는 것으로 계산되어 강자성 상태가 준 안정적임을 보였다.

• 한국세라믹학회지
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• 제30권9호
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• pp.701-708
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• 1993

Pd-doped SnO2 thin films for hydrogen gas sensing were fabricated by reactive fo magnetron sputtering and were studied on effects of film thickness and Pd doping content. Pd doping caused the optimum sensor operation temperature to reduce down to ~25$0^{\circ}C$ and also enhanced gas sensitivity, compared with undoped SnO2 film. Gas sensitivity depended on the film thickness. The sensitivity increased with decreasing the film thickness, showing maximum sensitivities at the thickness of 730$\AA$ and 300~400$\AA$ for the undoped SnO2 and the Pd-doped SnO2 film, respectively. Further decrease of the film thickness beyond these thickness ranges, however, resulted in the reduction of sensitivity again.

• 한국수소및신에너지학회논문집
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• 제12권4호
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• pp.287-292
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• 2001

The optical transmittance change of Pd thin film due to hydrogen absorption and desorption was examined at room temperature. Hydrogen absorption and desorption cycling effects on optical transmittance were measured 6 times in the pressure range between 0 and 640 torr. Optical transmittance of Pd film was increasing with increasing hydrogen pressure. Ratio of optical transmittance to the change of pressure at $\beta$ phase is bigger than that of low hydrogen pressure range.

• 한국수소및신에너지학회논문집
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• 제12권3호
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• pp.201-209
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• 2001

The change of optical transmittance of $PdH_x$ thin film due to hydrogen concentration change was measured at room temperature. Pd film($312{\AA}$ thick) was made by thermal evaporation on glass substrate. Hydrogen absorption and desorption cycling effect on optical transmittance was measured 4 times in the pressure range between 0 and 640 torr. Ratio of optical transmittance to the change of ln pressure(torr) increases with increasing number of hydrogen A-D cyclings in the ${\beta}$ phase.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1779-1781
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• 2000

Pd doped $SnO_2$ thin film sensors were prepared on alumina substrate by rf magnetron sputtering method. The sensitivity of thin film was investigated by varying the heat-treatment temperature, film thickness and gas species. The thin film heat-treated at 600$^{\circ}C$ and film thickness of 5000${\AA}$ showed the highest sensitivity at an operating temperature of 400$^{\circ}C$.

• 센서학회지
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• 제15권2호
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• pp.120-126
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• 2006

Physicochemical and electrical properties for hydrogen gas sensors based on Pd-deposited $WO_3$ thin films were investigated as a function of Pd thickness, annealing temperature, and operating temperature. $WO_3$ thin films were deposited on an insulating material by thermal evaporator. XRD, FE-SEM, AFM, and XPS were used to evaluate the crystal structure, microstructure, surface roughness, and chemical property, respectively. The deposited films were grown $WO_3$ polycrystalline with rhombohedral structure after annealing at $500^{\circ}C$. The addition effect of Pd is not the crystallinity but the suppression of grain growth of $WO_3$. Pd was scattered an isolated small spherical grain on $WO_3$ thin film after annealing at $500^{\circ}C$ and it was agglomerated as an irregular large grain or diffused into $WO_3$ after annealing at $600^{\circ}C$. 2 nm Pd-deposited $WO_3$ thin films operated at $250^{\circ}C$ showed good response and recovery property.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.175-176
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• 2007

This paper describes on the characteristics of Pd thin films deposited on poly-crystalline 3C-SiC buffer layers for microsensors, in which the poly 3C-SiC was grown on Si, $SiO_2$, and AlN substrates, respectively, by APCVD using HMDS, $H_2$, and Ar gas at $1100^{\circ}C$ for 30 min. In this work, a Pd thin film was deposited on the poly 3C-SiC film by RF magnetron sputter. The thickness, uniformity, and quality of these samples were evaluated by SEM. Crystallinity and orientation of the Pd film were analyzed by XRD. Finally, Pd/poly 3C-SiC schottky diodes were fabricated and characterized by current-voltage measurements. From these results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensors and other microsensors.