Characteristics of Pd doped $SnO_2$ gas sensitive thin films

Pd이 도핑된 $SnO_2$ 박막 가스감지막의 특성

  • Kim, Jin-Hae (Dept. of Electronic Materials Eng. & Research institute of Industrial Technology Gyeongsang Univ.) ;
  • Kim, Dae-Hyun (Space Technologies Co. Ltd.) ;
  • Lee, Yong-Sung (Space Technologies Co. Ltd.) ;
  • Kim, Jeong-Gyoo (Dept. of Electronic Materials Eng. & Research institute of Industrial Technology Gyeongsang Univ.) ;
  • Jeon, Choon-Bae (Dept. of Electronic Eng. Yonam College of Eng.) ;
  • Park, Hyo-Derk (Korea Electronics Technology Institute) ;
  • Park, Ki-Cheol (Dept. of Electronic Materials Eng. & Research institute of Industrial Technology Gyeongsang Univ.)
  • 김진해 (경상대학교 전자재료공학과 및 생산기술연구소) ;
  • 김대현 (스페이스테크놀로지(주)) ;
  • 이용성 (스페이스테크놀로지(주)) ;
  • 김정규 (경상대학교 전자재료공학과 및 생산기술연구소) ;
  • 전춘배 (연암공업대학 전자과) ;
  • 박효덕 (한국전자부품연구원) ;
  • 박기철 (경상대학교 전자재료공학과 및 생산기술연구소)
  • Published : 2000.07.17

Abstract

Pd doped $SnO_2$ thin film sensors were prepared on alumina substrate by rf magnetron sputtering method. The sensitivity of thin film was investigated by varying the heat-treatment temperature, film thickness and gas species. The thin film heat-treated at 600$^{\circ}C$ and film thickness of 5000${\AA}$ showed the highest sensitivity at an operating temperature of 400$^{\circ}C$.

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