• Journal of Life Science
• /
• v.21 no.12
• /
• pp.1666-1677
• /
• 2011

The regulation of gene expression plays an important role in cell cycle controls. In this study, a novel gene, the $mas1^+$($\underline{mi}$tosis $\underline{as}$sociated protein) gene, a homolog of human CIP29/Hcc1, was isolated and characterized from fission yeast Schizosaccharomyces pombe (S. pombe) using a gene-specific polymerase chain reaction. The isolated gene contained a complete open reading frame capable of encoding 245 amino acid residues with a typical promoter, as judged by nucleotide sequence analysis. It was also found that a PCB ($\underline{p}$ombe cell $\underline{c}$ycle $\underline{b}$ox) is located in the promoter region, which controls M-$G_1$ specific transcription in S. pombe. The quantitative analysis of the $mas1^+$ transcript against $adh1^+$ showed that the pattern of expression is similar to that of the septation index. Cytokinesis of mas1 mutant was greatly delayed at $25^{\circ}C$ and $36^{\circ}C$, and a large number of multi-septate cells were produced. The mas1 mutant had 2C, 4C and 6C DNA contents, as determined by FACS analysis. In addition, the number of multi-septate cells significantly increased. When cells were cultured in nitrogen starvation medium to increase proliferation, the abnormal phenotypes of mas1 mutant dramatically increased. These phenotypes could be rescued by an overexpression of the $mas1^+$ gene. The mas1 protein localized in the nuclei of S. pombe and human HeLa cells, as evidenced by Mas1-EGFP signals. The abnormal growth pattern and the morphology of mas1 mutant were complemented by a plasmid carrying human CIP29/Hcc-1cDNA. In addition, CIP29 /Hcc-1 transcript level increased in active cell proliferation stages in the developing mouse embryos. These results indicate that the $mas1^+$ ishomologous to the human CIP29/Hcc1 gene and is involved in cytokinesis and cell shape control.

• Korean Journal of Food Science and Technology
• /
• v.54 no.1
• /
• pp.17-27
• /
• 2022

In this study, we evaluated the antioxidant and antidiabetic effects of buckwheat. The diabetic animal models were divided into four groups: normal mice group (NOR), streptozotocin-induced diabetic mice group (STZ), group treated with seeds of common or tartary buckwheat (SCB or STB), and the group treated with whole plants of common or tartary buckwheat (PCB or PTB). Rutin content was 44-48 times higher in STB or PTB than in SCB. Oral glucose tolerance and insulin resistance were significantly reduced by treatment with STB, PCB, and PTB. Treatment with PTB also decreased the serum glucose level significantly and the serum insulin levels slightly compared with the STZ group. These results suggest that rutin content and antioxidant activity are closely related to the antidiabetic effect of the treatment. Our results demonstrate that the seeds of tartary buckwheat and whole plants of either common or tartary buckwheat have antidiabetic effects-attenuating blood glucose in an animal model of type II diabetes.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.25 no.5
• /
• pp.559-575
• /
• 2014

In this paper, we propose a horizontal/vertical calibration kit for calibrating a vector network analyzer(VNA) to measure the vertical connector pin. If the conventional calibration kit is used, we should change the arm for a probe or need an assistant device and it takes a long time. In addition there is a risk of precision degradation caused by the position change of the probe tip sensitive to the surroundings. We suggest a 4-port vertical calibration kit to make up for the aforementioned shortcomings. The calibration kit was manufactured for the SOLT calibration method. 'Short', 'Open', and 'Load' are available in the horizontal plane, 'Thru' is available not only in the horizontal plane on the two planes of a PCB, but in the vertical plane between the two planes according to the positions of the probes. We complemented the conventional calibration kit to make a vertical calibration kit to be used for the vertical measurement method. We compared and analysed their reflection/transfer characteristics of the SOLT calibration standards of the proposed calibration kit and conventional one, we get a ${\pm}0.1$ dB differences of transfer characteristics in the range from 300 kHz to 8.5 GHz. In order to demonstrate usefulness, and we performed a case study for horizontal and vertical cases, and compared the results of the proposed calibration kit and conventional one.

• Korean Journal of Optics and Photonics
• /
• v.23 no.1
• /
• pp.12-16
• /
• 2012

In the paper, we fabricated a Ni master with $45^{\circ}$-mirror structures for flexible waveguide fabrication. The flexible waveguide films with embedded $45^{\circ}$-angled mirrors at the waveguide ends were successfully fabricated using a UV-imprint process. Next, in order to enhance the reflectivity of the mirrors, Ni(3 nm)-Au(200 nm) bilayers were evaporated on the $45^{\circ}$-angled facets through a locally opened thin mask using an electron beam evaporator. We measured propagation loss, bending loss, mirror loss and bending reliability of the fabricated waveguide.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.24 no.11
• /
• pp.1034-1046
• /
• 2013

In this paper, a design of a GaN HEMT power amplifier using output matching circuit with arbitrary harmonic impedances is presented. The adopted GaN HEMT device, TGF2023-02 of TriQuint Semiconductor, was packaged in commercial package. The optimal impedances of the GaN HEMT package are extracted from load-pull simulation at package input and output reference planes. The targets of load-pull simulation are the highest output power at fundamental frequency and the highest efficiency at $2^{nd}$ and $3^{rd}$ harmonic frequencies. Because of fixture in the package, the extracted impedances shows arbitrary harmonic impedances. In order to match the optimal impedances, output matchin circuit which has 4 transmission lines is presented. Characteristic impedances and electrical lengths of the transmission lines are mathmatically calculated. The power amplfiier with $54.6{\times}40mm^2$ shows the output power of 8 W at the fundamental frequency of 2.5 GHz, the efficiency above 55 %, and harmonic suppression of above 35 dBc at the $2^{nd}$ and the $3^{rd}$ harmonics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.9
• /
• pp.535-540
• /
• 2017

The changes in the electrical characteristics of CMOS ICs due to coupling with a narrow-band electromagnetic wave were analyzed in this study. A magnetron (3 kW, 2.45 GHz) was used as the narrow-band electromagnetic source. The DUT was a CMOS logic IC and the gate output was in the ON state. The malfunction of the ICs was confirmed by monitoring the variation of the gate output voltage. It was observed that malfunction (self-reset) and destruction of the ICs occurred as the electric field increased. To confirm the variation of electrical characteristics of the ICs due to the narrow-band electromagnetic wave, the pin-to-pin resistances (Vcc-GND, Vcc-Input1, Input1-GND) and input capacitance of the ICs were measured. The pin-to-pin resistances and input capacitance of the ICs before exposure to the narrow-band electromagnetic waves were $8.57M{\Omega}$ (Vcc-GND), $14.14M{\Omega}$ (Vcc-Input1), $18.24M{\Omega}$ (Input1-GND), and 5 pF (input capacitance). The ICs exposed to narrow-band electromagnetic waves showed mostly similar values, but some error values were observed, such as $2.5{\Omega}$, $50M{\Omega}$, or 71 pF. This is attributed to the breakdown of the pn junction when latch-up in CMOS occurred. In order to confirm surface damage of the ICs, the epoxy molding compound was removed and then studied with an optical microscope. In general, there was severe deterioration in the PCB trace. It is considered that the current density of the trace increased due to the electromagnetic wave, resulting in the deterioration of the trace. The results of this study can be applied as basic data for the analysis of the effect of narrow-band high-power electromagnetic waves on ICs.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.17 no.6
• /
• pp.239-245
• /
• 2016

In this study, a 12 V PWM boost converter was designed with the optimal values of the external components of the power stage was well as the compensation stage for smart electronic applications powered by a battery device. The 12 V boost PWM converter consisted of several passive elements, such as a resistor, inductor and capacitor with a diode, power MOS switch and control IC chip for the control PWM signal. The devices of the power stage and compensation stage were designed to maintain stable operation under a range of load conditions as well as achieving the highest power efficiency. The results of this study were first verified by a simulation in SPICE from calculations of the values of major external elements comprising the converter. The design was also implemented on the prototype PCBboard using commercial IC LM3481 from Texas Instruments, which has a nominal output voltage of 12 V. The output voltage, ripple voltage, and load regulation with the line regulation were measured using a digital oscilloscope, DMM tester, and DC power supply. By configuring the converter under the same conditions as in the circuit simulation, the experimental results matched the simulation results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.20 no.10
• /
• pp.1031-1041
• /
• 2009

A small microstrip monopole antenna for macro-micro frequency tuning over multiple bands is presented. The meander-shape antenna is fabricated on a conventional printed circuit board(FR-4, $\varepsilon_r=4.4$ and tan $\delta=0.02$). The antenna operates over WiBro(2.3~2.4 GHz) and WLAN a/b(2.4~2.5 GHz/5.15~5.35 GHz) service bands with an essentially constant antenna gain within each service band. Two diodes, a PIN diode and a varactor, are embedded into the antenna for frequency reconfiguration. The PIN diode is used for frequency switching(macro-tuning) between 2 GHz and 5 GHz bands while the varactor is used for frequency tuning(micro-tuning) within the service bands, 2.3~2.5 GHz and 5.15~5.35 GHz. Unwanted resonances between the two frequency bands(2 GHz and 5 GHz) are suppressed by filling up the gaps between the meander lines. The antenna gain is essentially constant and higher than 2 dBi within each service band. The measured performance of the proposed antenna system suggests the macro-micro frequency tuning techniques be useful in reconfigurable wireless communication systems.

• Journal of Korean Society for Atmospheric Environment
• /
• v.26 no.5
• /
• pp.517-532
• /
• 2010

After establishment of Banwol industrial complex in 1987, Ansan city becomes the largest industrial sector development in Gyeonggi-do, Korea. As the population and industrial activity grow over this region, toxic air pollutants, particularly POPs (Persistent Organic Pollutants) from various emission sources have been major public concerns. Air samples for POPs monitoring were collected at the industrial sites ($A_2$), residential sites ($B_1$, $B_2$), commercial site (C), and rural/remote site (D) of the area of Ansan during 2008 with a prolonged industrial sampling site $A_1$ from 2001 to 2008. All samples were analysed for 2,3,7,8 substituted-polychlorinated dibenzo-p-dioxin and dibenzofurans (PCDD/Fs) and dioxin like polychlorinatd diphenyls (dl-PCBs). In site $A_1$, a steady decline of their concentrations from 2003 to 2008 was observed due to the reinforced emission guideline from waste incinerators. The average concentration of the PCDD/Fs and dl-PCBs ranged between 0.118 pg-TEQ/$m^3$ (rural/remote site D) and 0.532 pg-TEQ/$m^3$ (industrial area $A_2$). These level were generally consistent with previous studies in Gyeonggi-do, while higher than other places. Most of PCDD/Fs congener were partitioned into particle phase, whereas dl-PCBs were partitioned into gas phase. The logarithm of gas-particle partition coefficient $K_P$ of dl-PCBs and PCDD/Fs were well correlated with sub-cooled liquid vapor pressure $P_L$. The slope $m_T$ of log $K_P$ versus log $P_L$ for PCDD/Fs (-1.22) and dl-PCBs (-1.02) in industrial area ($A_2$) were high compared to other residential/commercial area. It suggests that this area was likely influenced by the direct emission source of PCDD/Fs and dl-PCBs. To simulate the partition of PCDD/Fs and dl-PCBs between gas and particle phase, Junge-Pankow model ($P_L$-base) and $K_{oa}$ model were applied. It was found that J-P model was more suitable than the $K_{oa}$ model in this study.

• Resources Recycling
• /
• v.10 no.5
• /
• pp.29-35
• /
• 2001

This study was carried out to recover gold, silver and valuable metals from the printed circuit boards (PCBs) of waste computers. PCBs samples were crushed under 1 mm by a shredder and separated into 30% conducting and loft nonconducting materials by an electrostatic separator. The conducting materials contained valuable metals which were then used as feed materials for magnetic separation. 42% of magnetic materials from the conducting materials was removed by magnetic separation as nonvaluable materials and the others, 58% of non magnetic materials, was used as leaching samples containing 0.227 mg/g Au and 0.697 mg/g Ag. Using the materials of leaching from magnetic separation, more than 95% of copper, iron, zinc, nickel and aluminium was dissolved in 2.0M sulfuric acid solution, added with 0.2M hydrogen peroxide at $85^{\circ}C$. Au and Ag were not extracted in this solution. On the other hand, more than 95% of gold and 100% of silver were leached by the selective leaching with a mixed solvent (0.2M($NH_4$)$_2$$S_2$$O_3$,0.02M $CuSO_4$,0.4M $NH_4$OH). Finally, the residues were reacted with a NaCl solution to leach Pb whereas sulfuric acid was used to leach Sn. Recoveries reached 95% and 98% in solution, respectively.