• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.959-962
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• 2001

In this study, the piezoelectric and dielectric properties and Temperature stability of resonant frequency with MnO$_2$doped 0.36Pb(Sc$_{1}$2/Nb$_{1}$2/)O$_3$- 0.25Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_3$-0.39PbTiO$_3$(hereafter PSNNT) were investigated. The tetagonality of crystal structure was developed with increasing MnO$_2$additive content. With increasing MnO$_2$additive content, the electromechanical coupling factor and quality factor were increased. Electromechanical coupling k$_{p}$ and quality factor Q$_{m}$ at MnO$_2$doped with 2.0mol% were showed highest value of 55.6% and 252. In the case of specimen for MnO$_2$doped with 2mol%, temperature dependance of resonant frequency had a good properties.ies.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.905-912
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• 1995

Influences of the starting salts on the phase and morphology of the Pb(Zr, T)O$_3$powders prepared by ultrasonic spray pyrolysis were studied. The Phases of the Powders Prepared from the combination of metal nitrate(or oxynitrate), acetate(or oxyacetate), and alkoxide were the Pb(Zr, Ti)O$_3$with or without minor PbTiO$_3$. The pores on the surface of the spherical particles increased with the nitrate content in the starting solution and their formation was thought to result from the decomposition characteristics of metal nitrate. Pb acetate, Zr oxyacetate, Ti oxynitrate, and Ti (isopropoxide+acetylacetonate) was suitable as the starting salts for the preparation of Pb(Zr, Ti)O$_3$powders by ultrasonic spray pyrolysis in the viewpoint of the phase and morphology of the powders.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.848-850
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• 1999

In this study, PZT etching was performed using planar inductively coupled Ar(20)/$Cl_2/BCl_3$ plasma, The etch rate of PZT film was 2450 $\AA/min$ at Ar(20)/$BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis for film composition was utilized. The chemical bond of PbO is broken by ion bombardment, and the peak of metal Pb in a Pb 4f peak begins to appear upon etching, decreasing Pb content faster than Zr and Ti. As increase content of additive $BCl_3$, the relative content of oxygen decreases rapidly. We thought that abundant Band BCl radicals made volatile oxy-compound such as $B_{x}O_{y}$ and/or $BClO_x$ bond. To understand etching mechanism, Langmuir probe and optical emission spectroscopy (OES) analysis were utilized for plasma diagnostic.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.794-797
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• 2004

The object of investigation is represented by PbxSrl-xTiO3(PST) thin films, which were fabricated by the alkoxide-based sol-gel method on Pt/Ti/SiO2/Si substrate. We have investigated both structural and dielectric properties of PST thin films aimed to tunable microwave device applications as a function of Pb/Sr ratio. PST thin films showedtypical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films were found as strongly dependent on Pb/Sr composition ratio. Increasing of Pb content leads to simultaneous increasing of both dielectric constant and dielectric loss characteristics of PST films. The figure of merit (FOM) Parameter (FOM : (%) tunability / tan (%)) reached a maximal value of 27.5 corresponding to Pb/Sr ratio of 40/60. The tunability increased with increasing Pb content. The dielectric constants, dielectric loss and tunability of the PST thin films at Pb/sr ratio of 40/60 measured at 100 kHz were 335, 0.0174 and 47.89 %, respectively.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.47.2-47
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• 2003

• Journal of the Korean Ceramic Society
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• v.30 no.2
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• pp.101-106
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• 1993

Effects of CaO on microwave dielectric properties of (Ba, Pb)O-Nd2O3-TiO2 ceramic ystem were investigated. As the content of CaO increases, the sintered bulk density decreases due to the decrease of sinterability. However, with increasing the sintering tmperature, the relative dielectric constants increases. This has been attributed on the formation of the 2nd phase inclusion, TiO2(rutile). The Q values increase due to the compensation effect of Ca ions up to 1 wt%, and then decrease due to the interfacial relaxation effects. The temperature coefficient of resonance frequency increases to a positive direction with increasing the amounts of CaO.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.5
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• pp.644-648
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• 1995

Transparent xBa(La$_{1}$2/Nb$_{1}$2/)O$_{3}$-(1-x)Pb(Zr, Ti)O$_{3}$ (x=8.5, 9.0[mol.%], Zr/Ti=70/30~40/60) ceramics were fabricated by the two-stage sintering method, the electrooptic properties were investigated with Ba(La$_{1}$2/Nb$_{1}$2/)O$_{3}$ content and Zr/Ti composition ratio. Decreasing the Zr/Ti ratio, the electrooptic property was changed from a quadratic electrooptic effect to a linear electrooptic effcet. In the BLN-PZT 9.0/50/50 specimen having the tetragonal structure, the linear electrooptic coefficient had the highest value of 6.01*10$^{-10}$ [m/V] and in the BLN-PZT 9.0/55/45 specimen which located near the MPB region, the quadratic electrooptic coefficient had the highest value of 10.53*10$^{-16}$ [m$^{2}$/V$^{2}$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.48-51
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• 1997

(Pb. La)TiO$_3$ thin films were fabricated by sol-gel Processing and spin-coated on the Pt substrate. The spin-coated PLT films were sintered at 75$0^{\circ}C$ for 5min by rapid thermal ann La content dependence of the electrical properties of the PLT thin films are discussed. Wit La mole% from 20 to 36mo1e%. the dielectric constant of the PLT thin films decreased f 570. P-E hysteresis loops changed from ferroelectric to paraelectric. and the charge storage charging time decreased. The Curie Point decreased with increasing La content. The leak density also decreased and La 36mo1% species shows mood characteristics less than 10- electric field 500 (KV/cm) Because of the broad range of composition-controlled ferroelectric PLT thin films are suitable for memory application.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.8
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• pp.894-900
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• 2006

The electrical characteristics associated with crystal structure changes as a function of La content for $(Pb_{1-x}La_x)(Zr_{0.5}Ti_{0.5})O_3$ thin films were investigated for applications in memory capacitors. Tetragonality of PLZT films decreased with increasing La content. Thin films with La $\geq$ 20 mol% were found to be cubic. Films with La $\geq$ 12 mol% exhibited broader dielectric peaks compared to those of bulk ceramics and behaved as relaxer ferroelectrics. Tetragonal PLZT film with 12 mol% La had a dielectric constant maximum of 1330 at room temperature and a charge storage density of ${\sim}18{\mu}C/cm^2$ at 5 V. Decrease in coercive field and remnant polarization with increase in La content were resulting from less dipolar response caused by the decreased crystal anisotropy. The leakage current densities $<10^{-8}A/cm^2$ up to 5 V bias voltage were observed for the films with La $\geq$ 14 mol%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.294-296
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• 1999

Solid solution ceramics having various ratios between xPb( $Y_{1}$2/T $a_{1}$2/) $O_3$ and Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_3$were synthesized by a conventional solid state reaction for well sintered specimens, dielectric and piezoelectric prperties were studied as a function of composition. The dielectric constant of PYT-PZT ceramics of 4 mol% PYT was 1,424 at room temperature. The maximum value of electromechanical couping facotr $k_{p}$ of 51% $k_{t}$ of 30% were obtained at the composition of 4 mol% PYT, howerver mechanical quality factor( $Q_{m}$) had a minimum value of 69 at 4 mol% PYT. Also the maximum value of piezoelectric constant of $D_{33}$(310[pC/N]) and $d_{31}$(-131[pC/N]) were obtained at the composition of 4 mol% PYT content.ntent.t.t.t.