• Title/Summary/Keyword: Patterned substrate

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The Laminating process for Single Substrate Flexible LCD

  • Bae, Kwang-Soo;Choi, Yoon-Seuk;Kim, Hak-Rin;Kim, Jae-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1125-1128
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    • 2007
  • The laminating technique for developing flexible liquid crystal display was demonstrated by using a thin UV curable polymer film and a plastic substrate with patterned polymer wall structure. We adopted the rigid wall structure to provide a solid mechanical support for the stable molecular alignment of liquid crystals (LCs) in the device. The cover film was prepared to have an ability of aligning LC molecules by patterning a micro-groove structure using the soft-lithographic process. These two substrates can be assembled tightly by the laminating and one-step UV irradiation process because of the adhesive nature of the used UV curable polymers. Proposed method can be used to fabricate the flexible LC display with simplicity and also be applicable for a cost-effective roll-to-roll process.

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Inkjet-print patterned transparent conductive CNT films

  • Kim, Mun-Ja;Shin, Jun-Ho;Lee, Jong-Hak;Lee, Hyun-Chul;Yoo, Ji-Beom
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1119-1121
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    • 2006
  • Using a chemical radical we modified the surface property of PET substrates. The chemically treated substrate surface improved dispersion of CNTs on substrate and provides suitable adhesion of CNTs to substrate. In addition, an ink-jet printed patterning technique effectively improved the transparency of transparent conductive CNT composite films.

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Fabrication of Organic Thin-Film Transistors with Polymer Gate Insulators on Plastic Substrate

  • Ahn, Seong-Deok;Kang, Seung-Youl;Oh, Ji-Young;You, In-Kyu;Kim, Gi-Heon;Baek, Kyu-Ha;Kim, Chul-Am;Suh, Kyung-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1170-1173
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    • 2006
  • Active layer patterned OTFT was obtained on a plastic substrate using the optimal growth condition of pentancene thin films as active layer and parylene thin films as passivation layer. Tranditional photolithography was performed to use a dry etch to pattern the material stack. The pentacene thin film and parylene thin film were deposited onto a plastic substrate using PC-OVD and CVD, respectively.

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Fabrication of Bi-2212 Superconducting thick Films by MPMG process (부분용융법을 이용한 Bi-2212 초전도 후막 제작)

  • 강형곤;임성훈;임성우;한병성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.77-79
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    • 1999
  • Bi$_2$Sr$_2$CaCu$_2$O(Bi-2212) thick films were fabricated on Y211 substrate by screen printing method. The aim of the study was to fabricate superconducting thick films on Y211 substrate by MPMG process. For this study, patterned samples by screen printing method were heated with MPMG process. The thickness of Bi2212 on substrate was about 20 ${\mu}{\textrm}{m}$ and these samples showed many Bi- 2212 phases.

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GaN Film Growth Characteristics Comparison in according to the Type of Buffer Layers on PSS (PSS 상 버퍼층 종류에 따른 GaN 박막 성장 특성 비교)

  • Lee, Chang-Min;Kang, Byung Hoon;Kim, Dae-Sik;Byun, Dongjin
    • Korean Journal of Materials Research
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    • v.24 no.12
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    • pp.645-651
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    • 2014
  • GaN is most commonly used to make LED elements. But, due to differences of the thermal expansion coefficient and lattice mismatch with sapphire, dislocations have occurred at about $109{\sim}1010/cm^2$. Generally, a low temperature GaN buffer layer is used between the GaN layer and the sapphire substrate in order to reduce the dislocation density and improve the characteristics of the thin film, and thus to increase the efficiency of the LED. Further, patterned sapphire substrate (PSS) are applied to improve the light extraction efficiency. In this experiment, using an AlN buffer layer on PSS in place of the GaN buffer layer that is used mainly to improve the properties of the GaN film, light extraction efficiency and overall properties of the thin film are improved at the same time. The AlN buffer layer was deposited by using a sputter and the AlN buffer layer thickness was determined to be 25 nm through XRD analysis after growing the GaN film at $1070^{\circ}C$ on the AlN buffer CPSS (C-plane Patterned Sapphire Substrate, AlN buffer 25 nm, 100 nm, 200 nm, 300 nm). The GaN film layer formed by applying a 2 step epitaxial lateral overgrowth (ELOG) process, and by changing temperatures ($1020{\sim}1070^{\circ}C$) and pressures (85~300 Torr). To confirm the surface morphology, we used SEM, AFM, and optical microscopy. To analyze the properties (dislocation density and crystallinity) of a thin film, we used HR-XRD and Cathodoluminescence.

Flexible and Transparent CuO/Cu/CuO Electrodes Grown on Flexible PET Substrate by Continuous Roll-to-roll Sputtering for Touch Screen Panels Cells

  • Kim, Dong-Ju;Kim, Han-Ki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.217.2-217.2
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    • 2014
  • We prepared a flexible and transparent CuO/Cu/CuO multilayer electrodes on a polyethylene terephthalate (PET) substrate using a specially designed roll-to-roll sputtering system at room temperature for GFF-type touch screen panels (TSPs). By the continuous roll-to-roll sputtering of the CuO and Cu layer, we fabricated a flexible CuO(150nm)/Cu(150nm)/CuO(150nm) multilayer electrodes with a sheet resistance of $0.289{\Omega}/square$, resistivity of $5.991{\times}10^{-23}{\Omega}-cm$, at the optimized condition without breaking the vacuum. To investigate the feasibility of the CuO/Cu/CuO multilayer as a transparent electrode for GFF-type TSPs, we fabricated simple GFF-type TSPs using the diamond patterned CuO/Cu/CuO electrode on PET substrate as function of mesh line width. Using diamond patterned CuO/Cu/CuO electrode of mesh line $5{\mu}m$ with sheet resistance of 38 Ohm/square, optical transmittance of 90% at 550 nm and an average transmittance of 89% at wavelength range from 380 to 780 nm, we successfully demonstrated GFF-type touch panel screens (TPSs). The successful operation of GFF-type TPSs with CuO/Cu/CuO multilayer electrodes indicates that the CuO/Cu/CuO multilayer is a promising transparent electrode for large-area capacitive-type TPSs due to its low sheet resistance and high transparency.

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Fabrication of a Bottom Electrode for a Nano-scale Beam Resonator Using Backside Exposure with a Self-aligned Metal Mask

  • Lee, Yong-Seok;Jang, Yun-Ho;Bang, Yong-Seung;Kim, Jung-Mu;Kim, Jong-Man;Kim, Yong-Kweon
    • Journal of Electrical Engineering and Technology
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    • v.4 no.4
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    • pp.546-551
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    • 2009
  • In this paper, we describe a self-aligned fabrication method for a nano-patterned bottom electrode using flood exposure from the backside. Misalignments between layers could cause the final devices to fail after the fabrication of the nano-scale bottom electrodes. A self-alignment was exploited to embed the bottom electrode inside the glass substrate. Aluminum patterns act as a dry etching mask to fabricate glass trenches as well as a self-aligned photomask during the flood exposure from the backside. The patterned photoresist (PR) has a negative sidewall slope using the flood exposure. The sidewall slopes of the glass trench and the patterned PR were $54.00^{\circ}$ and $63.47^{\circ}$, respectively. The negative sidewall enables an embedment of a gold layer inside $0.7{\mu}m$ wide glass trenches. Gold residues on the trench edges were removed by the additional flood exposure with wet etching. The sidewall slopes of the patterned PR are related to the slopes of the glass trenches. Nano-scale bottom electrodes inside the glass trenches will be used in beam resonators operating at high resonant frequencies.

Preparation of in situ Patterned ZnO Thin Films by Microcontact Printing (Microcontact Printing을 이용한 미세패턴 ZnO 박막 제조)

  • 임예진;윤기현;오영제
    • Journal of the Korean Ceramic Society
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    • v.39 no.7
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    • pp.649-656
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    • 2002
  • In situ patterned zinc oxide thin films were prepared by precipitation of Zn(NO$_3$)$_2$ aqueous solution containing urea and by microcontact printing using Self-Assembled Monolayers(SAMs) on A1/SiO$_2$/Si substrates. The visible precipitation of Zn(OH)$_2$ that was formed in the Zn(NO$_3$)$_2$ aqueous solution containing urea was enhanced with an increase of the reaction temperature and the amount of urea. As the reaction time of Zn(NO$_3$)$_2$ with urea was prolonged, the thickness and grain size of Zn(OH)$_2$ thin layers were increased, respectively. The optimum precipitation condition was at 80$\^{C}$ for 1 h for the solution with the ratio of Zn(NO$_3$)$_2$ to urea of 1 : 8. Homogeneous ZnO thin films were fabricated by the heat treatment of 600$\^{C}$ for 1 h of Zn(OH)$_2$ precipitation on Al/SiO$_2$/Si substrate. This was available to the in-situ patterned ZnO thin films with uniform grain size. Hydrophobic SAM, Octadecylphosphonic Acid(OPA) and hydrophilic SAM, 2-Carboxyethylphosphonic Acid(CPA) were applied on the Al/SiO$_2$/Si substrate by microcontact printing method. In situ patterned ZnO thin film was successfully prepared by the heat treatment of Zn(OH)$_2$ precipitated on the surface of hydrophilic SAM, CPA.

Development of 3D Micro-Nano Hybrid Patterns Using Anodized Aluminum and Micro-Indentation (양극산화된 알루미늄과 마이크로 인덴데이션을 이용한 3차원 마이크로-나노 하이브리드 패턴 제작)

  • Kwon, Jong-Tae;Shin, Hong-Gue;Kim, Byeong-Hee;Seo, Young-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.31 no.12
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    • pp.1139-1143
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    • 2007
  • A simple method for the fabrication of 3D micro-nano hybrid patterns was presented. In conventional fabrication methods of the micro-nano hybrid patterns, micro-patterns were firstly fabricated and then nano-patterns were formatted on the micro-patterns. Moreover, these micro-nano hybrid patterns could be fabricated on the flat substrate. In this paper, we suggested the fabrication method of 3D micro-nano hybrid patterns using micro-indentation on the anodized aluminum substrate. Since diameter of the hemispherical nano-pattern can be controlled by electrolyte and applied voltage in the anodizing process, we can easily fabricated nano-patterns of diameter of loom to 300nm. Nano-patterns were firstly formatted on the aluminum substrate, and then micro-patterns were fabricated by deforming the nano-patterned aluminum substrate. Hemispherical nano-patterns of diameter of 150nm were fabricated by anodizing process, and then micro-pyramid patterns of the side-length of $50{\mu}m$ were formatted on the nano-patterns using micro-indentation. Finally we successfully replicated 3D micro-nano hybrid patterns by hot-embossing process. 3D micro-nano hybrid patterns can be applied to nano-photonic device and nano-biochip application.

Rapid Topological Patterning of Poly(dimethylsiloxane) Microstructure (Poly(dimethylsiloxane) 미세 구조물의 신속한 기하학적 패터닝)

  • Kim, Bo-Yeol;Song, Hwan-Moon;Son, Young-A;Lee, Chang-Soo
    • Textile Coloration and Finishing
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    • v.20 no.1
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    • pp.8-15
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    • 2008
  • We presented the modified decal-transfer lithography (DTL) and light stamping lithography (LSL) as new powerful methods to generate patterns of poly(dimethylsiloxane) (PDMS) on the substrate. The microstructures of PDMS fabricated by covalent binding between PDMS and substrate had played as barrier to locally control wettability. The transfer mechanism of PDMS is cohesive mechanical failure (CMF) in DTL method. In the LSL method, the features of patterned PDMS are physically torn and transferred onto a substrate via UV-induced surface reaction that results in bonding between PDMS and substrate. Additionally we have exploited to generate the patterning of rhodamine B and quantum dots (QDs), which was accomplished by hydrophobic interaction between dyes and PDMS micropatterns. The topological analysis of micropatterning of PDMS were performed by atomic force microscopy (AFM), and the patterning of rhodamine B and quantum dots was clearly shown by optical and fluorescence microscope. Furthermore, it could be applied to surface guided flow patterns in microfluidic device because of control of surface wettability. The advantages of these methods are simple process, rapid transfer of PDMS, modulation of surface wettability, and control of various pattern size and shape. It may be applied to the fabrication of chemical sensor, display units, and microfluidic devices.