• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.67-71
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• 2014

An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.

• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.55-61
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• 2012

We fabricated a-Si:H thin-film solar cell using the two-dimensional (2D) periodic patterned glass substrate. The use of a 3D periodic texture rather than a randomly texture at surface of TCO can result in higher short circuit current densities ($J_{sc}$). In order to analyze the optical effect of patterning glasses, ray-tracing simulations were performed. Also, p-i-n cells were deposited on patterned glasses as substrate by PECVD. UV-Vis spectroscopy, light I-V measurement were carried out for the optoelectronic characterization. The anti-reflective and light-trapping performance of patterning glass substrate was investigated by a comparison of experimental results with numerical simulations.

• Journal of Radiation Industry
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• v.7 no.2_3
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• pp.149-154
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• 2013

In this study, the simple preparation of poly(sodium 4-styrenesulfonate) (PSS)-patterned substrate via a selective ion irradiation was investigated to manipulate cell adhesion. PSS thin films spin-coated onto the hydrophobic polystyrene (PS) was patterned through masked 150 keV proton irradiation followed by developing with deionized water. The characteristics of the resulting PSS-patterned surfaces were investigated by using microscope, surface profiler, FT-IR, XPS, and contact angle analyzer. These analytical results revealed that the resolved $100{\mu}m$ PSS patterns were formed on the hydrophobic PS surface above the fluence of $1{\times}10^{15}ions\;cm^{-2}$ and the chemical structure, composition, and wettability of the PSS patterns were dependant on a fluence. Moreover, the results of the in-vitro cell culture and proliferation assay exhibited that H1299 cells preferentially adhered and proliferated onto the more hydrophilic PSS part of the PSS-patterned PS and the well-aligned cell patterns was formed on the PSS-patterned PS particularly at the fluence of $1{\times}10^{15}ions\;cm^{-2}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.822-825
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• 2006

We propose a transflective In-Plane Switching mode in which patterned retarder is placed only on the reflective area of the upper substrate side. By selecting optic axes of Half Wavelength Plate and Liquid Crystal as 24 and 90 degree with respect to polarizer, condition of low reflectance for visible wavelength range at black state is found.

• Korean Journal of Materials Research
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• v.16 no.7
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• pp.408-411
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• 2006

An effective wet-chemical approach is demonstrated for growing large-area, selectively-patterned, and low-temperature-synthesized ZnO nanorods (ZNRs). The growth of ZNRs was enhanced on a Co layer. The selectivity and density were readily controlled by the control of the temperature when the substrate transfers into aqueous solution. The cross-sectional transmission electron microscopy image shows that single crystalline ZNRs grown along [0001] have good adhesion at interface between ZNRs/substrate. The turn-on field was 4 $V/{\mu}m$ at the emission current density of 1 ${\mu}A/cm^2$. The stable emission was obtained at 0.11 $mA/cm^2$ under 7.2 $V/{\mu}m$ over 10 hr. These results suggest that selectively-patterned ZNRs have the potential for use as field emitters in large-area field emission displays.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.34-36
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• 1997

We have fabricated a patterned diamond field emitter on a silicon substrate. Fine diamond particles were planted on a silicon wafer using conventional scratch method. A silicon oxide film was deposited on the substrate seeded with diamond powder. An array of holes was patterned on the silicon oxide film using VLSI processing technology. Diamond grains were grown using a microwave plasma-assisted chemical vapor deposition. Because diamond could not grow on the silicon oxide barrier, diamond grains filled only the patterned holes in the silicon oxide film, resulting in an array of diamond tips.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.623-626
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• 2010

We synthesized ZnO nanowires patterned on Si substrate and investigated the field emission properties of the nanowires. Firstly, Au catalyst layers were fabricated on Si substrate by photo-lithography and lift-off process. The diameter of Au pattern was $50\;{\mu}m$ and the pattern was arrayed as $4{\times}4$. ZnO nanowires were grown on the Au catalyst pattern by the aid of Au liquid phase. The orientation of the ZnO nanowires was vertical on the whole. Sufficient brightness was obtained when the electric field was $5.4\;V/{\mu}m$ and the emission current was $5\;mA/cm^2$. The threshold electric field was $5.4\;V/{\mu}m$ in the $4{\times}4$ array of ZnO nanowires, which is quite lower than that of the nanowires grown on the flat Si substrate. The lower threshold electric field of the patterned ZnO nanowires could be attributed to their vertical orientation of the ZnO nanowires.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.199-205
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• 2006

Patterned sapphire substrates (PSS) were fabricated by a simple wet etching process with $SiO_2$ stripe masks and a mixed solution of $H_2SO_4$ and $H_3PO_4$. GaN layers were epitaxially grown on the PSS under the optimized 2-step growth condition of metalorganic vapor deposition. During the 1st growth step, GaN layers with triangular cross sections were grown on the selected area of the surface of the PSS, and in the 2nd growth step, the GaN layers were laterally grown and coalesced with neighboring GaN layers. The density of threading dislocations on the surface of the coalesced GaN layer was $2{\sim}4\;{\times}\;10^7\;cm^{-2}$ over the entire region. The epitaxial structure of near-UV light emitting diode (LED) was grown over the GaN layers on the PSS. The internal quantum efficiency and the extraction efficiency of the LED structure grown on the PSS were remarkably increased when compared to the conventional LED structure grown on the flat sapphire substrate. The reduction in TD density and the decrease in the number of times of total internal reflections of the light flux are mainly attributed due to high level of scattering on the PSS.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.10a
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• pp.294-297
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• 2004

RTP(Rapid Thermal Pressing) is to fabricate desired pattern on polymer substrate by pressing patterned mold against the substrate heated around glass transition temperature. For a successful RTP process, the whole process including heating, molding, cooling and demolding should be conducted 'rapidly' as possible. As the RTP process is effective in replicating patterns on flat large surface without causing shape distortion after cooling, it is being widely used for fabricating various micro/bio application components, especially with channel-type microstructures on surface. This investigation finally aims to develop a RTP process machine for mass-producing micro/bio application components. As a first step for that purpose, we intended to examine the technological difficulties for realizing mass production by RTP process. Therefore, in the current paper, 4 kinds of RTP machines were examined and then the RTP process was conducted experimentally for PMMA film by using one of the machines, HEX 03. The micro-patterned molds used for RTP experiment was fabricated from silicon wafer by semi-conduct process. The replicated micro patterns on PMMA films were examined using SEM and the causes of defect observed in the replicated patterns were discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.10
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• pp.676-681
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• 2015

Recently many studies being carried out to increase the light efficiency of LED. The external quantum efficiency of LED, generally the light efficiency, is determined by the internal quantum efficiency and the light extraction efficiency. The internal quantum efficiency of LED was already reached to more than 90%, but the light extraction efficiency is still insufficient compared with the internal quantum efficiency because the total internal reflection is generated in the interface between the LED chip and air. Thus, we studied about flip chip LED with PSS and performed the optical simulation which find more optimized PSS for flip chip LED to increase the light extraction efficiency. Decreasing of the total internal reflection and effect of diffused reflection according to PSS improved the light extraction efficiency. To get more higher the efficiency, we simulated flip chip with PSS that the parameters are arrangement, edge spacing, radius, height and shape of PSS.