• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.926-929
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• 2007

A significant progress has been made in the characterization of zinc oxide (ZnO) semiconductor as a new semiconductor layer instead of amorphous Si semiconductor used in thin film transistor due to its high electron mobility at low deposition temperature which is quite suitable for flexible display and OLED devices. The wet pattering of ZnO is another important issue with regard to mass production of ZnO thin film transistor device. However, the wet behavior of ZnO thin film in aqueous wet etching solutions conventionally used un TFT industry has not been reported yet, in this work, wet corrosion behavior of RF magnetron sputtered ZnO thin film in various wet solutions such as phosphoric and nitric acid solutions was studied using by electrochemical analysis. The effects of deposition parameters such as RF power and oxygen partial pressure on corrosion rate are also examined.

• 한국전기전자재료학회논문지
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• 제23권2호
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• pp.118-123
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• 2010

The eco-friendly technologies have been extended as matter of international concern due to various diseases and syndromes according to an environmental pollution. In this study, we have manufactured a ceramic cluster with thick film type for anion generation equipment which is maximized anion but minimized ozone contents generated. To develop the formulation of ceramic cluster, we conducted the $Mg_2SiO_4$ powders doped with 10 vol% glass frits as Na-Zn-B-O system and sintered at $1050^{\circ}C$ for 2 hours in air for starting materials and investigated the matching properties between the Ag-Pd electrode and the starting materials. The sintered sample for the composition of cluster has 6.7 of dielectric constant and 32 kV/mm of withstand voltage. The yield of anions was measured according to an electrode pattering, discharge gap between electrode, and thickness of electrode protective layer in the cluster of thick film type. We have manufactured the ceramic clusters with optimized thick film structure that have an anion over a hundred particles and the ozone of 0.6 ppb generated.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 춘계학술대회 논문집 에너지변화시스템부문
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• pp.259-262
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• 2009

Several universities in Korea are beginning studies related to soft stamping processes but since the studies are done with manual works thus systematic tests can't be performed due to difficulties in producing reproducible and repeatable fine patterns. Therefore, the phenomenon of destruction of the pattern forms of elastic polymers occurred during working because of inconsistent printing pressures and pinting time and there have been difficulties in maintaining flatness or producing uniform and fault-free fine structures in pinting large areas and also, there have been difficulties in multi-layered processes as patterns were changed by contacts in registering and errors in alignments. The purpose of development of this technology is to improve the process of soft lithography so that contacts between PDMS stamps and metal coated substrates in order to develop a stamp printing device that can not only shorten but also optimize processes, secure reproducibility and repeatability and is advantageous in printing large areas. Also, using this technology, this author is to develop equipment technologies and applied technologies for nano grade pattern printing processes with new concepts based on fine contact printing processes in order to apply them to diverse nano pattering processes.

• 정보저장시스템학회논문집
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• 제6권2호
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• pp.79-82
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• 2010

In optical imaging systems, such as microscopes, high resolution exposure systems, and optical storage devices, higher optical resolution is a requirement. One of the promising technologies that is able to satisfy this requirement with relatively simple construction and reliable performance are, solid immersion lens (SIL)-based near-field (NF) optical systems. High NA optical systems using annular apertures have been investigated as one solution to achieve higher resolutions and an extended focal depth. By applying an optimized annular aperture to convention SIL optical head resolution can be increased by approximately 20%. This novel SIL-based near-field optics will be verified through experiments such as measuring focused beam spot profiles and observing the topology of a measurement sample. The studied SIL-based near-field optics can be applicable to not only next generation optical storage device but also high resolution microscopy and pattering technologies.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.244.2-244.2
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• 2013

Contact Pattern을 Plasma Etching을 통해 Pattering 공정을 진행함에 있어서 Plasma 내에 존재하는 High Energy Ion 들의 Bombardment 에 의해, Contact Bottom 의 Silicon Lattice Atom 들은 Physical 한 Damage를 받아 Electron 의 흐름을 방해하게 되어, Resistance를 증가시키게 된다. 또한 Etchant 로 사용되는 Fluorine 과 Chlorine Atom 들은, Contact Bottom 에 Contamination 으로 작용하게 되어, 후속 Contact 공정을 진행하면서 증착되는 Ti 나 Co Layer 와 Si 이 반응하는 것을 방해하여 Ohmic Contact을 형성하기 위한 Silicide Layer를 형성하지 못하도록 만든다. High Aspect Ratio Contact (HARC) Etching 을 진행하면서 Contact Profile을 Vertical 하게 형성하기 위하여 Bias Power를 증가하여 사용하게 되는데, 이로부터 Contact Bottom에서 발생하는 Etchant 로 인한 Damage 는 더욱 더 증가하게 된다. 이 Damage Layer를 추가적인 Secondary Damage 없이 제거하기 위하여 본 연구에서는 원자층 식각방법(Atomic Layer Etching Technique)을 사용하였다. 실험에 사용된 원자층 식각방법을 이용하여, Damage 가 발생한 Si Layer를 Secondary Damage 없이 효과적으로 Control 하여 제거할 수 있음을 확인하였으며, 30 nm Deep Contact Bottom 에서 Damage 가 제거될 수 있음을 확인하였다. XPS 와 Depth SIMS Data를 이용하여 상기 실험 결과를 확인하였으며, SEM Profile 분석을 통하여, Damage 제거 결과 및 Profile 변화 여부를 확인하였으며, 4 Point Prove 결과를 통하여 결과적으로 Resistance 가 개선되는 결과를 얻을 수 있었다.

• Journal of Welding and Joining
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• 제34권4호
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• pp.23-27
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• 2016

A 3D printed metal part and thermal plastic polymer part were joined by direct laser irradiation. The 3D metal part was fabricated by using DED(Direct Energy Deposition) with STS316 material. The experiment was carried out through no patterned metal surface, 3D metal printed surface and micro laser patterned surface. The most secure joining quality was obtained at the laser micro patterned surface specimen and the counterparts of polymers were PLA and PE based thermo plastics. The applied laser power was 350Watt and the distance of patterns was maintained at $150{\mu}m$. The laser line width was optimized at $450{\mu}m$ and the laser micro pattern depth was $180{\mu}m$ for the best joining quality. Based on the result analysis, the possibility of laser material joining for metal to polymer was proposed and multi-material joining will be possible in 3D laser direct material fabrication.

• 한국입자에어로졸학회지
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• 제13권3호
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• pp.111-118
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• 2017

전기수력학 (Electrohydrodynamic, EHD) 프린팅 기술은 전기장을 이용하여 일반 프린팅 기술보다 더 작은 크기의 액적을 분사하고 패터닝할 수 있는 장점을 갖고 있다. EHD 프린팅은 일반적으로 인쇄 노즐이나 기판을 X-Y 방향으로 움직여 패턴을 제작하는 방식으로 사용되어 왔으나 본 연구에서는 다중전극 어레이 (Multielectrode array, MEA)를 이용하여 원하는 기판위에 2차원의 패터닝이 가능함을 연구하였다. 특히, 약물전달장치 등의 바이오메디칼 디바이스로의 응용이 가능한 생분해성 고분자와 염료를 혼합한 잉크의 EHD 프린팅을 시도하였으며 노즐이나 기판의 움직임 없이 안정적으로 분사할 수 있는 2차원 범위에 대한 연구를 통해 최소 약 $6{\mu}m$ 크기를 갖는 패턴을 노즐 위치로부터 수평방향으로 약 1 mm 범위까지 안정적 패터닝이 가능함을 확인하였다. 또한, MEA 전극 간의 거리에 의한 패턴 조밀도의 한계를 극복하기 위해 MEA와 인쇄가 이루어지는 기판과의 상대적 이동을 통해 더 조밀한 패터닝이 가능함을 보여주었다.

• Journal of Microbiology and Biotechnology
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• 제25권3호
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• pp.381-385
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• 2015

In the present study, drop-on-demand two-dimensional patterning of unstained and stained bacterial cells on untreated clean wafers was newly conducted using an electrospray pulsed jet. We produced various spotted patterns of the cells on a silicon wafer by varying the experimental conditions, such as the frequency, flow rate, and translational speed of the electrospray system in a two-dimensional manner. Specifically, the electrospray's pulsed jet of cell solutions produced alphabetical patterns consisting of spots with a diameter of approximately $10{\mu}m$, each of which contained a single or a small number of viable bacteria. We tested the viability of the patterned cells using two visualization methods. This pattering technique is newly tested here and it has the potential to be applied in a variety of cell biology experiments.

• Progress in Superconductivity
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• 제8권2호
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• pp.181-185
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• 2007

For more than two decades Nb trilayer ($Nb/Al_2O_3/Nb$) process has been serving as the most stable fabrication process of the Josephson junction integrated circuits. Fast development of semiconductor fabrication technology has been possible with the recent advancement of the fabrication equipments. In this work, we took an advantage of advanced fabrication equipments in developing a superconducting Arithmetic Logic Unit (ALU) by using Nb trilayers. The ALU is a core element of a computer processor that performs arithmetic and logic operations on the operands in computer instruction words. We used DC magnetron sputtering technique for metal depositions and RF sputtering technique for $SiO_2$ depositions. Various dry etching techniques were used to define the Josephson junction areas and film pattering processes. Our Nb films were stress free and showed the $T{_c}'s$ of about 9 K. To enhance the step coverage of Nb films we used reverse bias powered DC magnetron sputtering technique. The fabricated 1-bit, 2-bit, and 4-bit ALU circuits were tested at a few kilo-hertz clock frequency as well as a few tens giga-hertz clock frequency, respectively. Our 1-bit ALU operated correctly at up to 40 GHz clock frequency, and the 4-bit ALU operated at up to 5 GHz clock frequency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.436-437
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• 2012

Double patterning technology (DPT) has been suggested as a promising candidates of the next generation lithography technology in FLASH and DRAM manufacturing in sub-40nm technology node. DPT enables to overcome the physical limitation of optical lithography, and it is expected to be continued as long as e-beam lithography takes place in manufacturing. Several different processes for DPT are currently available in practice, and they are litho-litho-etch (LLE), litho-etch-litho-etch (LELE), litho-freeze-litho-etch (LFLE), and self-aligned double patterning (SADP) [1]. The self-aligned approach is regarded as more suitable for mass production, but it requires precise control of sidewall space etch profile for the exact definition of hard mask layer. In this paper, we propose etch end point detection (EPD) in spacer etching to precisely control sidewall profile in SADP. Conventional etch EPD notify the end point after or on-set of a layer being etched is removed, but the EPD in spacer etch should land-off exactly after surface removal while the spacer is still remained. Precise control of real-time in-situ EPD may help to control the size of spacer to realize desired pattern geometry. To demonstrate the capability of spacer-etch EPD, we fabricated metal line structure on silicon dioxide layer and spacer deposition layer with silicon nitride. While blanket etch of the spacer layer takes place in inductively coupled plasma-reactive ion etching (ICP-RIE), in-situ monitoring of plasma chemistry is performed using optical emission spectroscopy (OES), and the acquired data is stored in a local computer. Through offline analysis of the acquired OES data with respect to etch gas and by-product chemistry, a representative EPD time traces signal is derived. We found that the SE-EPD is useful for precise control of spacer etching in DPT, and we are continuously developing real-time SE-EPD methodology employing cumulative sum (CUSUM) control chart [2].