• 한국표면공학회지
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• 제19권4호
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• pp.133-139
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• 1986

The effects of alternating voltage, $Cl^-$ ion and pH on the corrosion of Zn and Zn-Fe alloys have been investigated by using electrochemical techniques in $Ca(OH)_2$ solutions. The passive film $Zn(OH)_2$ was initially formed on the Zn surface and gradually transformed to $Ca(Zn(OH)_3)_2{\cdot}2H_2O$, which was identified with the X-ray diffraction method, SEM micrograph and EPMA. The passivity current increased with increasing alternating voltage and decrease AC frequency. ${\xi}$ phase in Zn-Fe alloys reduced the effects of AC. The effect of $Cl^-$ ion on the passivity current of Zn was similar to the AC effect, resulting in pits on Zn. It was also found that the passive region of Zn decreased rapidly below pH 10.3 of the solution.

• Journal of Information Display
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• 제6권4호
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• pp.11-15
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• 2005

We propose a current mode logic circuit design method for LTPS TFT for enhancing circuit operating speed. Current mode inverter/buffers with passive resistive load had been designed and fabricated. Measurement results indicated that the smaller logic swing of the current mode allowed significantly faster operation than the static CMOS. In order to reduce the chip size, both all pTFT and all nTFT active load current mode inverter/buffer had been designed and analyzed by HSPICE simulation. Even though the active load current mode circuits were inferior to the passive load circuits, it was superior to static CMOS gates.

• 한국광학회지
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• 제12권2호
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• pp.98-102
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• 2001

포화흡수체$Cr^{4+}:YAG$와 유기염료 박막을 사용한 $1.06{\mu}m$ Nd:YAG 공진기에서 수동 큐스위칭 동작시 나타나는 포화흡수체의 포화특성을 분석하였다. 정상모드와 수동 큐스위칭 레이저의 문턱에너지 차이로 광손실을 측정하여 큐스위칭 동작에서 나타나는 포화흡수체의 포화투과도와 불포화 기저상태 밀도수를 분석하였다.

• 한국표면공학회지
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• 제46권3호
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• pp.116-119
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• 2013

To improve the corrosion resistance of an electrogalvanized steel sheet, we deposited magnesium film on it using a vacuum evaporation method and annealed the films at $250-330^{\circ}C$. The zinc-magnesium alloy is consequently formed by diffusion of magnesium into the zinc coating. From the anodic polarization test in 3% NaCl solution, the films annealed at $270-310^{\circ}C$ showed better corrosion resistance than others. In X-ray diffraction analysis, $ZnMg_2$ was detected through out the temperature range, whereas $Mg_2Zn_{11}$ and $FeZn_{13}$ were detected only in the film annealed at $310^{\circ}C$. The depth composition profile showed that the compositions of Mg at $270-290^{\circ}C$ are evenly and deeply distributed in the film surface layer. These results demonstrate that $270-290^{\circ}C$ is a proper temperature range to produce a layer of $MgZn_2$ intermetallic compound to act as a homogeneous passive layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.178-178
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• 2009

전자제품의 고속화, 고집적화, 고성능이 요구되어짐에 따라 IC's 성능 향상을 통해 패키징 기술의 소형화를 필요로 하고 있어 소재나 칩 부품을 이용해 커패시터나 저항을 구현하여 내장시키는 임베디드 패시브 기술에 대한 연구가 많이 진행되어 지고 있다. 본 연구에서는 3D 패키징이 가능한 flexible 소재에 능, 수동 소자를 내장하기 위한 다층 flexible 기판 공정 기술에 대한 연구를 수행하였다. 기판제작을 위해 flexible 소재에 미세 형성이 가능한 폴리머 필름을 접착하였고 flexible 위에 후막 저항체 패턴을 퍼|이스트를 이용하여 형성하였다. 또한, 능동소자 내장을 위해 test chip을 제작하여 플립칩 본더를 이용해 flexible 기판에 접합한 후에 bonding film을 이용한 build up 공정을 통해 via를 형성하고 무전해 도금 공정을 거쳐 전기적인 연결을 하였다. 위의 공정을 통해 앓고 가벼울 뿐만 아니라 자유롭게 구부러지는 특성을 갖고 있는 능, 수동 소자 내장형 flexible 기판의 변형에 따른 전기적 특성을 평가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.282-283
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• 2009

In the research, we have proposed a novel encapsulation with simple process and steady film for external environment in comparison with conventional encapsulation method. This was designed to cover the emitting organic material from air. Silicon 야oxide was used for thin film of encapsulation and the deposition thickness of the organic film was 220 nm. Operating voltage of green OLED with encapsulation was 5.5 V and luminance was 7.370 cd/$m^2$ at the applied voltage of 14.5 V. Luminance was measured in 10 hour intervals at the air-exposed condition. After 110 hours and 300 hours, luminances of green OLED were 7,368 and 7,367 cd/$m^2$, respectively. Luminance of green JLED doesn't decrease until 300 hours. As a results, proposed encapsulation can increase the life time of green OLED.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.263-266
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• 2001

In this paper, we investigated dielectric properies for BST thin films that was deposited on MgO/Si substrates using RF magnetron sputtering. In here, MgO film was used to perform that a diffusion b arrier between the BST film and Si substrate and a buffer layer to assist the BST film growth. A d eposition condition for MgO films was RF Power of 50W, substrate temperature of room temperature and the working gas ratio of Ar:O$_2$ were varied from 90:10 to 60:47. Finally we manufactured the cap acitor of Al/BST/MgO/Si/Al structure to know electrical properties of this capacitor through I-V, C-V measurement. In the results, C-V aha racteristic curves was shown a ferroelectric property so we measured P-E. A remanent poliazation and coerceive electric field was present 2$\mu$C/cm$^2$ and -27kV/cm respectively at Ar:O$_2$=90:10. And a va clue of dielectric constant was 86 at Ar:02=90:10.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1476-1478
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor, inductor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by TaN(tantalum nitride) on alumina substrate. The TCR properties of the TaN films were discussed in terms of crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's annealing temperature and ambient annealing condition. Respectively, at $300{\sim}400^{\circ}C$ on vacuum and nitrogen annealed thin film resistor having a goof thermal stability and lower TCR properties then as deposited thin films expected for the application to the dielectric material of passive component.

• 한국전기전자재료학회논문지
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• 제15권2호
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• pp.110-118
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• 2002

Organic thin film transitors(OTFT) are of interest for use in broad area electronic applications. And recently organic electroluminescent devices(OELD) have been intensively investigated for using in full-color flat-panel display. We have fabricated inverted-staggered structure OTFTs at lower temperature using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active eletronic material and photoacryl as the organic gate insulator. The field effect mobility is 0.039∼0.17 ㎠/Vs, on-off current ratio is 10$\^$6/, and threshold voltage is -7V. And here we report the study of driving emitting, Ir(ppy)$_3$, phosphorescent OELD with all organic thin film transistor and investigated its electrical characteristics. The OELD with a structure of ITO/TPD/8% Ir(ooy)$_3$ doped in BCP/BCP/Alq$_3$/Li:Al/Al and OTFT with a structure of inverted-stagged Al(gate electrode)/photoacry(gate insulator)/pentacene(p-type organic semiconductor)/ Au(source-drain electrode) were fabricated on the ITP patterned glass substrate. The electrical characteristics are turn-on voltage of -10V, and maximum luminance of about 90 cd/㎡. Device characteristics were quite different with that of only OELD.

• 대한금속재료학회지
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• 제47권10호
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• pp.644-651
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• 2009

The passivation (or deactivation) of a metal surface during oxide film formation has been quantitatively explored for a ferritic stainless steel by using dynamic electrochemical impedance spectroscopy (DEIS). For this purpose, the electrochemical impedance spectra were carefully examined as a function of applied potential in the active nose region of the potentiodynamic polarization curve, to separate the charge transfer resistance and oxide film resistance. From the discrepancy in the potential dependence between the experimental charge transfer resistance and the semi-empirically expected one, the degree of passivation could be quantitatively estimated. The sensitivity of passivation of the steel surface to anodic potential, which might be the measure of the quality of the oxide film formed under unit driving force or over-potential, decreased by 31% when 3.5 wt% NaCl was added to a 5 wt% $H_2SO_4$ solution.