• 대한화학회지
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• 제57권5호
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• pp.533-539
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• 2013

변전위법과 전기화학 임피던스 측정법을 이용하여 borate 완충용액에서 니켈 회전원판전극의 전기화학적 부식과 부동화를 연구하였다. Tafel 기울기, 임피던스, 회전원판전극의 회전속도, 그리고 부식전위와 부식전류의 pH 의존성으로부터 니켈의 부식과 부동화 반응 메커니즘과 환원반응에서의 수소 발생 반응구조를 제안하였다. EIS data로부터 등가회로를 제안하였으며 산화반응의 영역별로 전기화학적 변수들을 측정하였다. 부동화 반응에 의하여 생성된 $Ni(OH)_2$ 산화피막은 전기장의 영향을 받는 탈수반응에 의해 NiO로 전환되는 것으로 보인다.

• 한국전기전자재료학회논문지
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• 제19권6호
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• pp.538-546
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• 2006

We report on characteristics of specially designed inductively-coupled-plasma chemical vapor deposition (ICP-CVD) system for top-emitting organic light emitting diodes (TOLEDs). Using high-density plasma on the order of $10^{11}$ electrons/$cm^3$ generated by linear-type antennas connected in parallel and specially designed substrate cooling system, a 100 nm-thick transparent $SiN_{x}$ passivation layer was deposited on thin Mg-Ag cathode layer at substrate temperature below $50\;^{\circ}C$ without a noticeable plasma damage. In addition, substrate-mask chucking system equipped with a mechanical mask aligner enabled us to pattern the $SiN_x$ passivation layer without conventional lithography processes. Even at low substrate temperature, a $SiN_x$ passivation layer prepared by ICP-CVD shows a good moisture resistance and transparency of $5{\times}10^{-3}g/m^2/day$ and 92 %, respectively. This indicates that the ICP-CVD system is a promising methode to substitute conventional plasma enhanced CVD (PECVD) in thin film passivation process.

• 한국표면공학회지
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• 제41권3호
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• pp.102-108
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• 2008

In this paper, the LiF and polymer thin film as passivation layer have been evaporated on green OLED devices. HDPE, polyacenaphthylene, polytetrafluoroethylene, poly(2,6-dimethyl-1,4-pheneylene oxide), poly sulfone and poly(dimer-acid-co-alkyl poly-amine) have been used as polymer materials. The optical transmittance of evaporated polymer thin film was very good as an above 90% in visible range. The morphology of polymer thin film was measured by AFM. As a result of the measurement average roughness($R_a$) value of the polysulfone was very low as 2.2 nm. The green OLED devices with a structure of ITO/HIL/HTL/EML/Buffer/Al in series of various passivation films were fabricated and analyzed. It was observed that an OLED device with LiF as first passivation film has shown the good electrical and optical property, and all kind of polymer films did not influence on the I-V-L characteristics and the life time of OLED devices. Therefore, we found that polymer layer played a key role as a buffer layer between the inorganic passivation layers to relieve the stress of the inorganic layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.71-72
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• 2006

We report on plasma damage free chemical vapor deposition technique for the thin film passivation of organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays using catalyzer enhanced chemical vapor deposition (CECVD). Specially designed CECVD system has a ladder-shaped tungsten catalyzer and movable electrostatic chuck for low temperature deposition process. The top emitting OLED with thin film $SiN_x$ passivation layer shows electrical and optical characteristics comparable to those of the OLED with glass encapsulation. This indicates that the CECVD technique is a promising candidate to grow high-quality thin film passivation layer on OLED, OTFT, and flexible displays.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.114-115
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• 2007

In this paper, it was demonstrated that organic thin-film transistors (OTFTs) were fabricated with the organic passivation layer by vapor deposition polymerization (VDP) processing, In order to form polymeric film as an passivation layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing, Field effect mobility, threshold voltage, and on-off current ratio with 450-nm-thick organic passivation layer were about $0.21\;cm^2/Vs$, IV, and $1\;{\times}\;10^5$, respectively.

• 한국재료학회지
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• 제30권5호
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• pp.262-266
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• 2020

In this paper, we investigated the effect of the passivation stack with Al₂O₃, hydrogenated silicon nitride (SiN_x:H) stack and Al₂O₃, silicon oxynitride (SiON_x) stack in the n type bifacial solar cell on monocrystalline silicon. SiNx:H and SiON_x films were deposited by plasma enhanced chemical vapor deposition on the Al₂O₃ thin film deposited by thermal atomic layer deposition. We focus on passivation properties of the two stack structure after laser ablation process in order to improve bifaciality of the cell. Our results showed SiN_x:H with Al₂O₃ stack is 10 mV higher in implied open circuit voltage and 60 ㎲ higher in minority carrier lifetime than SiON_x with Al₂O₃ stack at Ni silicide formation temperature for 1.8% open area ratio. This can be explained by hydrogen passivation at the Al₂O₃/Si interface and Al₂O₃ layer of laser damaged area during annealing.

• 한국진공학회지
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• 제17권3호
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• pp.195-198
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• 2008

이 논문에서 무기 게이트 인슐레이터 위에 Polyimide 유기 점착층을 성형하여, 고성능의 유기 박막 트렌지스터(OTFT)소자를 제작한 후 450 nm 두께로 폴리이미드를 Vapor deposition polymerization (VDP)방법을 사용하여 패시베이션하였다. 이때 폴리이미드성막을 위해, 스핀코팅 방법 대신 VDP 방법 도입하였다. 이 폴리이미드 고분자막은 2,2 bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA)와 4,4‘-oxydianiline(ODA)을 고진공에서 동시에 열증착 시킨 후, $170^{\circ}C$에서 2시간 열처리하여 고분자화 된 막을 형성하였다. 다른 종류의 유기 패시베이션 막이 소자에 주는 영향을 비교 분석하기 위해, 450 nm 두께로 스핀코팅법을 이용하여 폴리비닐알콜 패시베이션 막을 형성하였다. 이 두 가지 패시베이션 막 형성법이 소자의 문턱전압과, 전하이동도에 주는 영향을 전기적 특성을 통해 변화를 확실히 볼 수 있었다. 최초 유기 박막 트렌지스터의 전기적 특성은 문턱전압, 점멸비, 그리고 정공의 이동도는 각각, -3 V, 약 $10^6$ 그리고, $0.24cm^2$/Vs 이 측정되었고. 폴리이미드를 사용하여 패시베이션 후 특성이 각각 0 V, 약 $10^6$ 그리고, $0.26cm^2/Vs$, 폴리비닐알콜 패시베이션 경우는 특성이 각각, 문턱전압의 경우 0 V에서 +2 V로, 점멸비는 $10^6$에서 $10^5$으로 전계효과이동도는 $0.13cm^2/Vs$ 에서 $0.13cm^2/Vs$로 변화하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1539-1542
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• 2007

We have synthesized novel organic passivation materials to protect organic thin film transistors (OTFTs) from $H_2O$ and $O_2$ using polyvinyl alcohol (PVA)/layered silicate (SWN) nano composite system. Up to 3 wt% of layered silicate to PVA, very homogeneous nanocomposite solution was prepared.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.196-196
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• 2014

플라즈마 건식 식각 기술은 반도체 식각공정에서 효과적으로 이용되고 있으며, 반도체 소자의 크기가 줄어듬에 따라 미세하고 정확하게 식각 깊이를 제어할 수 있는 원자층 식각 기술이 개발되었다. 3-5족 반도체 소자의 Interface Passivation Layer 로 이용되는 $Al_2O_3$ 와 BeO 의 원자층 식각을 하였으며, 각각의 원자층 식각 조건과 식각 후의 표면 거칠기 변화에 대한 영향을 확인 할 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1453-1456
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• 2009

Transparent sol-gel hybrid dielectric material (hybrimer) coating films were fabricated by spin coating and photo or thermal curing of sol-gel derived oligosiloxane resins. Hybrimer coating films are suitable as the passivation layer of TFT in AMLCD due to low dielectric constant, small loss tangent, low leakage current density, high transmittance and thermal stability.