• 한국지반공학회지:지반
• /
• 제13권1호
• /
• pp.147-158
• /
• 1997

본연구는 유한요소법을 이용하여 중간토지 반에 있어서의 부분배수의 정도가 지지력 및 변형 특성에 미치는 영향을 해석적으로 고찰한 것이다. 동시에 계산 결과를 모형실험 결과와 비교하여 계산법의 타당성 및 부분배수의 현상이 발생하는 지반의 지지력 문제에의 적용성을 검토하였다. 해석에는 수정 Cam-clay를 이용한 프로그램 CRISP90을 이용하였고,모델실험에서는 원심 모형시험장치를 이용하였다. 해석 결과, 부분배수의 영향을 받는 중간토지반의 하중칙하 관계를 충분한 정도로 표현할 수 있으며, 동법에 의해 상대재하속도를 배수, 비배수 및 부분배수영역의 3영역으로 분류 가능하고, 부분배수 영역의 범위는 10절도임을 밝혔다.

• 한국지반공학회:학술대회논문집
• /
• 한국지반공학회 2000년도 봄 학술발표회 논문집
• /
• pp.685-692
• /
• 2000

Vertical drain used improvement soft clay is made of not only decreasing construction time but also increasing the ground strength during some decades. As, it is applied to improvement soft clay with vertical drain, it is designed by the result that is caused by oedemeter test ignored anisotropic of the ground related to consolidation conditions. When we are expected consolidation conditions, the most important factors is soil of compaction and water permeability. Above all, anisotropic of the ground permeability show the results which differ between vertical and radial drainage. Recently, We study for radial consolidation coefficient and permeability coefficient that utilized Rowe Cell Consolidation and permeability tester but, it dont use well because of not only a supply lack also difficulty of test. The paper experimented with searching anisotropic of the ground so there are Rowe Cell test, standard consolidation tester and modified standard consolidation test that have pohang's soft clay ground. Therefore, we find anisotropic of the ground and a tester of easy use more than before. We made a comparison test result between the devised tester and Rowe Cell tester, Also, we learned average degree of consolidation for partial penetrating vertical drains. We were found relations as effective stress-void and effective stress-permeability coefficient through those tests.

• 반도체디스플레이기술학회지
• /
• 제20권2호
• /
• pp.82-86
• /
• 2021

In this study, we investigated the oxygen partial pressure effect of ITO films for electrodes of oxide-based Thin-Film Transistor (TFT). Firstly, we deposited single ITO films on the glass substrate at room temperature. ITO films were prepared at the various partial pressures of oxygen gas 0-7.4% (O₂/(Ar+O₂)). As increasing oxygen on the process of film deposition, electrical properties were improved and optical transmittance increased in the visible light range (300-800 nm). For the electrode of TFT, we fabricated a TFT device (W/L=1000/200 ㎛) with ITO films as the source and drain electrode on the silicon wafer. Except for the TFT device combined with ITO film prepared at the oxygen partial pressure ratio of 7.4%, We confirmed that TFT devices with ITO films via FTS system operated as a driving device at threshold voltage (V_th) of 4V.

• 한국지반공학회지:지반
• /
• 제14권6호
• /
• pp.93-112
• /
• 1998

본 연구에서는, 연약한 준설매립점토지반 내부에 플라스틱 배수재를 수평으로 설치하여 압밀침하의 가속화를 유도하는 수평배수공법의 해석절차 체계화에 초점을 두고 이론적 및 실험적 접근을 진행하였다. 이를 위해, 유한변형률 개념을 근거로 한 Gibson등의 1차원 자중압밀이론을 토대로, 자중압밀효과 및 수평배수재 설치에 따른 추가 압밀효과를 복합적으로 고려하는 지배방정식을 제시하였으며, 본 지배방정식 및 수평배수재 설치효과를 고려한 초기조건 및 경계조건 등을 토대로, Dufort-Erankel의 유한차분화 알고리즘을 이용해 시간경과에 따른 침하량 및 압밀도 등의 변화를 예측하기 위한 해석절차를 제시하였다. 또한 제시된 해석절차의 적용 타당성 확인을 위해, 안산 시화지구 준설매립점토 및 플라스틱 수평배수재를 이용한 실내모형실험을 실시하였다. 실내실험을 통해, 안산 시화지구 준설매립점토의 간극비-유효응력 관계 및 투수계수-간극비 관계 등을 정량적으로 정의하기 위한 기초자료를 획득 하였으며. 또한 시간경과에 따른 깊이별 침하량등을 측정하여 본 연구에서 제시된 해석절차에 의한 예측치와 비교.분석하였다. 이외에도 플라스틱 배수재 수평배수공법에 관련된 설계변수가 압밀침하등에 미치는 영향을 제시된 해석절차를 이용해 분석하였으며, 이 결과를 토대로 한 설계도표의 제시도 이루어 졌다.

• 대한치과기공학회지
• /
• 제35권1호
• /
• pp.57-64
• /
• 2013

Purpose: Waste parts of zirconia blocks and powders were remained after CAD/CAM process. In order to make these residual zirconia fit for practical use, zirconia single cores were produced by drain casting process. Methods: Remained zirconia blocks were reduced to powders with zirconia mortar, and screened with 180 mesh sieve. Zirconia slip was prepared from waste parts of zirconia by ball milling. Plaster molds for forming cores by slip casting were also prepared. Formed cores were removed from mold after partial drying. Dried cores were biscuit fired at $1,100^{\circ}C$ for 1hour. Biscuit fired cores were treated with tools to control the fitness and thickness. Finished cores were $2^{nd}$ fired at $1,500^{\circ}C$ for 1hour. Microstructure of cross section of core was observed by SEM. Results: When mill pot was filled with 100g of zirconia and alumina mixed powder, 300g of zirconia ball, and 180g of distilled water, the optimum slip for drain casting was obtained. Gypsum plaster for ceramic forming was more suitable then yellow stone plaster for casting process. SEM photograph showed the microstructure of fully dense with uniform grain size of zirconia and well dispersed alumina grains into the zirconia matrix. Conclusion: Zirconia single cores were produced by drain casting process. Drain casting is useful process to make these residual zirconia fit for practical use. Further study will be focused on the preparation of the bridge type cores by casting.

• Journal of Chest Surgery
• /
• 제17권3호
• /
• pp.381-388
• /
• 1984

Cor triatriatum is rare congenital cardiac anomaly first described by Church in 1868. The anomaly consists of an abnormal partitioning of the left atrium by a fibromuscular membrane that divides the atrium into an upper chamber, which receives the pulmonary veins, and a lower chamber, which contains the atrial appendage and the mitral valve. The upper and lower chambers communicate through a stenotic fenestration in the membrane, which has the hemodynamic consequence of pulmonary venous obstruction. Recently we experienced cot triatriatum associated with partial anomalous pulmonary drainage to right atrium. The upper chamber was connected to right atrium through a sinus venous type of ASD and received left superior and both inferior pulmonary vein, whereas the lower chamber so called true left atrium communicated with right atrium through foramen ovale type of ASD, left atrial appendage and mitral orifice. And the anomalous membrane has no fenestrations which permit blood flow. The operation was made right atrial approach under the CPB. We excised completely the anomalous septum and reconstructed atrial septal defect with pericardial patch to drain the right upper pulmonary vein to the left atrium. The postoperative course has been good during follow up.

• 한국지반공학회지:지반
• /
• 제12권4호
• /
• pp.101-114
• /
• 1996

본 연구는 중간토의 지지력 및 변형특성을 조사하기 위해 원심재하장치(centrifuge)를 이용한 지지력 실험을 시행한 결과이다. 점성토에 비해 투수계수가 비교적 큰 중간토지 반을 대상으로 재하 과정에서 발생하는 배수현상이 지반의 지지력에 미치는 영향을 조사하였다. 그 결과, 재하 속도와 지반의 투수계수와의 관계, 즉 본 연구에서 정의한 상대재하속도와 하중강도의 관계로부터 기존 설계상의 문제점을 지적하였고, 또한 재하속도의 차이에 의해 동일 침하량비에서의 하중강도의 대소관계가 역전하는 현상은 비 배수상태의 재하속도 의존성 뿐만 아니라 재하초기부터 발생하는 부분배수현상에 의한 것임을 재하중에 관측한 과잉간극수압의 거동과 변형거동을 중심으로 증명하였다. 나아가 중간토지반에 있어서 기초폭과 초기 지반응력 상태가 지지력에 미치는 영향을 조사하기 위하여 기초폭과 과압밀비를 변화시켜 중간토지반의 지지력 특성을 조사 하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.265.2-265.2
• /
• 2016

Oxide thin film transistors (TFTs) have attracted considerable interest for gate diver and pixel switching devices of the active matrix (AM) liquid crystal display (LCD) and organic light emitting diode (OLED) display because of their high field effect mobility, transparency in visible light region, and low temperature processing below $300^{\circ}C$. Recently, oxide TFTs with polycrystalline In-Ga-O(IGO) channel layer reported by Ebata. et. al. showed a amazing field effect mobility of $39.1cm^2/Vs$. The reason having high field effect mobility of IGO TFTs is because $In_2O_3$ has a bixbyite structure in which linear chains of edge sharing InO6 octahedral are isotropic. In this work, we investigated the characteristics and the effects of oxygen partial pressure significantly changed the IGO thin-films and IGO TFTs transfer characteristics. IGO thin-film were fabricated by rf-magnetron sputtering with different oxygen partial pressure ($O_2/(Ar+O_2)$, $Po_2$)ratios. IGO thin film Varies depending on the oxygen partial pressure of 0.1%, 1%, 3%, 5%, 10% have been some significant changes in the electrical characteristics. Also the IGO TFTs VTH value conspicuously shifted in the positive direction, from -8 to 11V as the $Po_2$ increased from 1% to 10%. At $Po_2$ was 5%, IGO TFTs showed a high drain current on/off ratio of ${\sim}10^8$, a field-effect mobility of $84cm^2/Vs$, a threshold voltage of 1.5V, and a subthreshold slpe(SS) of 0.2V/decade from log(IDS) vs VGS.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제55권1호
• /
• pp.26-29
• /
• 2006

Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible phometer. The resulting ZnO-TFT devices showed an on-off ration of $10^6$ and field effect mobility of 2.4-6.1 $cm^2/V{\cdot}s$.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.543-543
• /
• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.