• Geotechnical Engineering
• /
• v.13 no.1
• /
• pp.147-158
• /
• 1997

In this study, it is examined that partial drain has an effect of bearing capacities and deformations on intermediate soils. To compare the numerical and experimental results, this study uses CRISP90 which is composed of Modify Cam-Clay Model for calculation and Geotechnical Centrifuge in model test. As the results of analysis, we can classify relative loading rate into three ranges which are drain, undrain and partial drain. Besides it is proved that partial drain range is about 103.

• Proceedings of the Korean Geotechical Society Conference
• /
• 2000.03b
• /
• pp.685-692
• /
• 2000

Vertical drain used improvement soft clay is made of not only decreasing construction time but also increasing the ground strength during some decades. As, it is applied to improvement soft clay with vertical drain, it is designed by the result that is caused by oedemeter test ignored anisotropic of the ground related to consolidation conditions. When we are expected consolidation conditions, the most important factors is soil of compaction and water permeability. Above all, anisotropic of the ground permeability show the results which differ between vertical and radial drainage. Recently, We study for radial consolidation coefficient and permeability coefficient that utilized Rowe Cell Consolidation and permeability tester but, it dont use well because of not only a supply lack also difficulty of test. The paper experimented with searching anisotropic of the ground so there are Rowe Cell test, standard consolidation tester and modified standard consolidation test that have pohang's soft clay ground. Therefore, we find anisotropic of the ground and a tester of easy use more than before. We made a comparison test result between the devised tester and Rowe Cell tester, Also, we learned average degree of consolidation for partial penetrating vertical drains. We were found relations as effective stress-void and effective stress-permeability coefficient through those tests.

• Journal of the Semiconductor & Display Technology
• /
• v.20 no.2
• /
• pp.82-86
• /
• 2021

In this study, we investigated the oxygen partial pressure effect of ITO films for electrodes of oxide-based Thin-Film Transistor (TFT). Firstly, we deposited single ITO films on the glass substrate at room temperature. ITO films were prepared at the various partial pressures of oxygen gas 0-7.4% (O₂/(Ar+O₂)). As increasing oxygen on the process of film deposition, electrical properties were improved and optical transmittance increased in the visible light range (300-800 nm). For the electrode of TFT, we fabricated a TFT device (W/L=1000/200 ㎛) with ITO films as the source and drain electrode on the silicon wafer. Except for the TFT device combined with ITO film prepared at the oxygen partial pressure ratio of 7.4%, We confirmed that TFT devices with ITO films via FTS system operated as a driving device at threshold voltage (V_th) of 4V.

• Geotechnical Engineering
• /
• v.14 no.6
• /
• pp.93-112
• /
• 1998

In the present study, 2-D consolidation theory of the dredged clay by means of the horizontal drain method is proposed. The horizontal drain method to install the drains such as plastic drain board within the dredged clay is a soil improvement method to accelerate the consolidation by expelling pore water in the vertical direction along the horizontal drains. Based on the finite strain consolidation theory by Gibson et al., the partial differential equation of 2-D consolidation due to the horizontal drain is derived. The consolidation due to the horizontal drain can be illustrated from combined self-weight consolidation effect and consolidation effect by horizontal drains. For the prediction of consolidation settlement and degree of consolidation numerical analysis is suggested on the basis of Dufort-Frankel finite differential algorithm. Also, the analytical procedures proposed in this study are verified by the model tests, and the predictions of the consolidation settlement and degree of consolidation are compared with the results obtained from the tests for the dredged clay gathering at Siwha site in Ansan, Korea. For the predictions, the relationship void ratio vs effective stress and the relationship permeability vs void ratio of the dredged clay are obtained from the odometer tests. Additionally, the parametric study for consolidation settlement by variations of design parameters related with horizontal drain method is carried out. Based on the results of the parametric study, design .charts for the preliminary design are also proposed.

• Journal of Technologic Dentistry
• /
• v.35 no.1
• /
• pp.57-64
• /
• 2013

Purpose: Waste parts of zirconia blocks and powders were remained after CAD/CAM process. In order to make these residual zirconia fit for practical use, zirconia single cores were produced by drain casting process. Methods: Remained zirconia blocks were reduced to powders with zirconia mortar, and screened with 180 mesh sieve. Zirconia slip was prepared from waste parts of zirconia by ball milling. Plaster molds for forming cores by slip casting were also prepared. Formed cores were removed from mold after partial drying. Dried cores were biscuit fired at $1,100^{\circ}C$ for 1hour. Biscuit fired cores were treated with tools to control the fitness and thickness. Finished cores were $2^{nd}$ fired at $1,500^{\circ}C$ for 1hour. Microstructure of cross section of core was observed by SEM. Results: When mill pot was filled with 100g of zirconia and alumina mixed powder, 300g of zirconia ball, and 180g of distilled water, the optimum slip for drain casting was obtained. Gypsum plaster for ceramic forming was more suitable then yellow stone plaster for casting process. SEM photograph showed the microstructure of fully dense with uniform grain size of zirconia and well dispersed alumina grains into the zirconia matrix. Conclusion: Zirconia single cores were produced by drain casting process. Drain casting is useful process to make these residual zirconia fit for practical use. Further study will be focused on the preparation of the bridge type cores by casting.

• Journal of Chest Surgery
• /
• v.17 no.3
• /
• pp.381-388
• /
• 1984

Cor triatriatum is rare congenital cardiac anomaly first described by Church in 1868. The anomaly consists of an abnormal partitioning of the left atrium by a fibromuscular membrane that divides the atrium into an upper chamber, which receives the pulmonary veins, and a lower chamber, which contains the atrial appendage and the mitral valve. The upper and lower chambers communicate through a stenotic fenestration in the membrane, which has the hemodynamic consequence of pulmonary venous obstruction. Recently we experienced cot triatriatum associated with partial anomalous pulmonary drainage to right atrium. The upper chamber was connected to right atrium through a sinus venous type of ASD and received left superior and both inferior pulmonary vein, whereas the lower chamber so called true left atrium communicated with right atrium through foramen ovale type of ASD, left atrial appendage and mitral orifice. And the anomalous membrane has no fenestrations which permit blood flow. The operation was made right atrial approach under the CPB. We excised completely the anomalous septum and reconstructed atrial septal defect with pericardial patch to drain the right upper pulmonary vein to the left atrium. The postoperative course has been good during follow up.

• Geotechnical Engineering
• /
• v.12 no.4
• /
• pp.101-114
• /
• 1996

In this study, the characteristics of bearing capacity and deformation of intermediate soils are investigated through centrifuge tests. The experimental parameters are footing width, initial stress condition of soils and relative loading rate defined relationship of loading rate and permeability of soils. It is examined that loading rate influences on the bearing capacities and deformations. Based on the test results, some problem of existing specification are introduced in the view of related loading rates and load intensities. Especially it is showed that load intensities magnitude rlre reversed in the same settlement ratio(s/B(%)), due to partial drained effect as well as loading rates in undrained con dition based on the excess pore pressure and deformations measured under loading.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.265.2-265.2
• /
• 2016

Oxide thin film transistors (TFTs) have attracted considerable interest for gate diver and pixel switching devices of the active matrix (AM) liquid crystal display (LCD) and organic light emitting diode (OLED) display because of their high field effect mobility, transparency in visible light region, and low temperature processing below $300^{\circ}C$. Recently, oxide TFTs with polycrystalline In-Ga-O(IGO) channel layer reported by Ebata. et. al. showed a amazing field effect mobility of $39.1cm^2/Vs$. The reason having high field effect mobility of IGO TFTs is because $In_2O_3$ has a bixbyite structure in which linear chains of edge sharing InO6 octahedral are isotropic. In this work, we investigated the characteristics and the effects of oxygen partial pressure significantly changed the IGO thin-films and IGO TFTs transfer characteristics. IGO thin-film were fabricated by rf-magnetron sputtering with different oxygen partial pressure ($O_2/(Ar+O_2)$, $Po_2$)ratios. IGO thin film Varies depending on the oxygen partial pressure of 0.1%, 1%, 3%, 5%, 10% have been some significant changes in the electrical characteristics. Also the IGO TFTs VTH value conspicuously shifted in the positive direction, from -8 to 11V as the $Po_2$ increased from 1% to 10%. At $Po_2$ was 5%, IGO TFTs showed a high drain current on/off ratio of ${\sim}10^8$, a field-effect mobility of $84cm^2/Vs$, a threshold voltage of 1.5V, and a subthreshold slpe(SS) of 0.2V/decade from log(IDS) vs VGS.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.1
• /
• pp.26-29
• /
• 2006

Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible phometer. The resulting ZnO-TFT devices showed an on-off ration of $10^6$ and field effect mobility of 2.4-6.1 $cm^2/V{\cdot}s$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.543-543
• /
• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.