• Title/Summary/Keyword: Parasitic phase

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The Impact of Parasitic Elements on Spurious Turn-On in Phase-Shifted Full-Bridge Converters

  • Wang, Qing
    • Journal of Power Electronics
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    • 제16권3호
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    • pp.883-893
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    • 2016
  • This paper presents a comprehensive analysis of the spurious turn-on phenomena in phase-shifted full-bridge (PSFB) converters. The conventional analysis of the spurious turn-on phenomenon does not establish in the PSFB converter as realizing zero voltage switching (ZVS). Firstly, a circuit model is proposed taking into account the parasitic capacitors and inductors of the transistors, as well as the parasitic elements of the power circuit loop. Second, an exhaustive investigation into the impact of all these parasitic elements on the spurious turn-on is conducted. It has been found that the spurious turn-on phenomenon is mainly attributed to the parasitic inductors of the power circuit loop, while the parasitic inductors of the transistors have a weak impact on this phenomenon. In addition, the operation principle of the PSFB converter makes the leading and lagging legs have distinguished differences with respect to the spurious turn-on problems. Design guidelines are given based on the theoretical analysis. Finally, detailed simulation and experimental results obtained with a 1.5 kW PSFB converter are given to validate proposed analysis.

Analytical and Experimental Validation of Parasitic Components Influence in SiC MOSFET Three-Phase Grid-connected Inverter

  • Liu, Yitao;Song, Zhendong;Yin, Shan;Peng, Jianchun;Jiang, Hui
    • Journal of Power Electronics
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    • 제19권2호
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    • pp.591-601
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    • 2019
  • With the development of renewable energy, grid-connected inverter technology has become an important research area. When compared with traditional silicon IGBT power devices, the silicon carbide (SiC) MOSFET shows obvious advantages in terms of its high-power density, low power loss and high-efficiency power supply system. It is suggested that this technology is highly suitable for three-phase AC motors, renewable energy vehicles, aerospace and military power supplies, etc. This paper focuses on the SiC MOSFET behaviors that concern the parasitic component influence throughout the whole working process, which is based on a three-phase grid-connected inverter. A high-speed model of power switch devices is built and theoretically analyzed. Then the power loss is determined through experimental validation.

DC-DC 벅 컨버터의 차동모드 노이즈 분석을 위한 고주파 등가회로 모델 (High-Frequency Equivalent Circuit Model for Differential Mode Noise Analysis of DC-DC Buck Converter)

  • 신주현;김우중;차한주
    • KEPCO Journal on Electric Power and Energy
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    • 제6권4호
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    • pp.473-480
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    • 2020
  • In this paper, we proposed a high frequency equivalent circuit considering parasitic impedance components for differential noise analysis on the input stage during DC-DC buck converter switching operation. Based on the proposed equivalent circuit model, we presented a method to measure parasitic impedance parameters included in DC bus plate, IGBT, and PCB track using the gain phase method of a network analyzer. In order to verify the validity of this model, a DC-DC prototype consisting of a buck converter, a signal analyzer, and a LISN device, and then resonance frequency was measured in the frequency range between 150 kHz and 30 MHz. The validity of the parasitic impedance measurement method and the proposed equivalent model is verified by deriving that the measured resonance frequency and the resonance frequency of the proposed high frequency equivalent model are the same.

Passive parasitic UWB antenna capable of switched beam-forming in the WLAN frequency band using an optimal reactance load algorithm

  • Lee, Jung-Nam;Lee, Yong-Ho;Lee, Kwang-Chun;Kim, Tae Joong
    • ETRI Journal
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    • 제41권6호
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    • pp.715-730
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    • 2019
  • We propose a switched beam-forming antenna that satisfies not only ultra-wideband characteristics but also beam-forming in the WLAN frequency band using an ultra-wideband antenna and passive parasitic elements applying a broadband optimal reactance load algorithm. We design a power and phase estimation function and an error correction function by re-analyzing and normalizing all the components of the parasitic array using control system engineering. The proposed antenna is compared with an antenna with a pin diode and reactance load value, respectively. The pin diode is located between the passive parasitic elements and ground plane. An antenna beam can be formed in eight directions according to the pin diode ON (reflector)/OFF (director) state. The antenna with a reactance load value achieves a better VSWR and gain than the antenna with a pin diode. We confirm that a beam is formed in eight directions owing to the RF switch operation, and the measured peak gain is 7 dBi at 2.45 GHz and 10 dBi at 5.8 GHz.

정전 용량형 MEMS 공진기의 비이상적 주파수 응답 모델링 (Modeling of non-ideal frequency response in capacitive MEMS resonator)

  • 고형호
    • 센서학회지
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    • 제19권3호
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    • pp.191-196
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    • 2010
  • In this paper, modeling of the non-ideal frequency response, especially "notch-and-spike" magnitude phenomenon and phase lag distortion, are discussed. To characterize the non-ideal frequency response, a new electro-mechanical simulation model based on SPICE is proposed using the driving loop of the capacitive vibratory gyroscope. The parasitic components of the driving loop are found to be the major factors of non-ideal frequency response, and it is verified with the measurement results.

Cascode GaN HEMT를 적용한 위상 천이 dc-dc 컨버터의 구현 및 문제점 분석 (Implementation and Problem Analysis of Phase Shifted dc-dc Full Bridge Converter with GaN HEMT)

  • 주동명;김동식;이병국;김종수
    • 전력전자학회논문지
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    • 제20권6호
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    • pp.558-565
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    • 2015
  • Gallium nitride high-electron mobility transistor (GaN HEMT) is the strongest candidate for replacing Si MOSFET. Comparing the figure of merit (FOM) of GaN with the state-of-the-art super junction Si MOSFET, the FOM is much better because of the wide band gap characteristics and the heterojunction structure. Although GaN HEMT has many benefits for the power conversion system, the performance of the power conversion system with the GaN HEMT is sensitive because of its low threshold voltage ($V_{th}$) and even lower parasitic capacitance. This study examines the characteristics of a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT. The problem of unoptimized dead time is analyzed on the basis of the output capacitance of GaN HEMT. In addition, the printed circuit board (PCB) layout consideration is analyzed to reduce the negative effects of parasitic inductance. A comparison of the experimental results is provided to validate the dead time and PCB layout analysis for a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT.

차동 노이즈 분석을 위한 단상 인버터 고주파 회로 모델링 및 검증 (Single Phase Inverter High Frequency Circuit Modeling and Verification for Differential Mode Noise Analysis)

  • 신주현;생차야;김우중;차한주
    • 전력전자학회논문지
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    • 제26권3호
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    • pp.176-182
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    • 2021
  • This research proposes a high-frequency circuit that can accurately predict the differential mode noise of single-phase inverters at the circuit design stage. Proposed single-phase inverter high frequency circuit in the work is a form in which harmonic impedance components are added to the basic single-phase inverter circuit configuration. For accurate noise prediction, parasitic components present in each part of the differential noise path were extracted. Impedance was extracted using a network analyzer and Q3D in the measurement range of 150 kHz to 30 MHz. A high-frequency circuit model was completed by applying the measured values. Simulations and experiments were conducted to confirm the validity of the high-frequency circuit. As a result, we were able to predict the resonance point of the differential mode voltage extracted as an experimental value with a high-frequency circuit model within an approximately 10% error. Through this outcome, we could verify that differential mode noise can be accurately predicted using the proposed model of the high-frequency circuit without a separate test bench for noise measurement.

인덕터 내부저항을 고려한 LCL 필터의 능동댐핑 특성 (Active Damping Characteristics on Virtual Series Resistances of LCL Filter for Three-phase Grid-connected Inverter)

  • 김용중;김효성
    • 전력전자학회논문지
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    • 제21권1호
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    • pp.88-93
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    • 2016
  • LCL filters are widely used in high-order harmonics attenuation of output currents in grid-connected inverters. However, output currents of grid-connected inverters with LCL filters can become unstable because of the resonance of the filters. Given that the characteristics of output currents in inverters mostly depend on filter performance, the exact analysis of filters by considering parasitic components is necessary for both harmonics attenuation and current control. LCL filters have three or four parasitic components: the series and/or parallel resistance of the filter capacitor and the series resistance of the two filter inductors. Most studies on LCL filters have focused on the parasitic components of the filter capacitor. Although several studies have addressed the parasitic components of the filter inductor at the inverter side, no study has yet investigated the concurrent effects of series resistance in both filter inductors in detail. This paper analyzes LCL filters by considering series resistance in both filter inductors; it proposes an active damping method based on the virtual series resistance of LCL filters. The performance of the proposed active damping is then verified through both simulation and experiment using Hardware-in-the-Loop Simulator(HILS).

ESPAR 안테나를 사용하는 카오스 QPSK 변조 빔 공간 MIMO 시스템 (Chaos QPSK Modulated Beamspace MIMO System Using ESPAR Antenna)

  • 이준현;복준영;유흥균
    • 한국통신학회논문지
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    • 제39A권2호
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    • pp.77-85
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    • 2014
  • 최근 대용량, 초고속 통신 서비스의 비중이 높아짐에 따라 배열 안테나를 사용하는 MIMO(Multi-Input Multi-Output) 시스템의 활용이 중요하게 평가되고 있다. 하지만 기존의 MIMO 시스템은 다수의 안테나를 사용하기 때문에 안테나의 개수만큼 RF(Radio Frequency) 체인이 요구되며, 이로 인해 복잡도와 전력 소모가 크다는 단점을 가진다. 이러한 기존 MIMO 시스템의 단점을 해결하기 위해서 단일 능동 소자와 다수의 기생 소자를 이용하는 방식의 ESPAR(Electronically Steerable Parasitic Array Radiator) 안테나를 사용하는 빔 공간 MIMO 시스템에 대한 연구가 활발히 진행되고 있다. ESPAR 안테나를 사용하는 빔 공간 MIMO 시스템은 단일 RF 체인으로 구성되어 있기 때문에 기존 MIMO 시스템의 단점을 해결할 수 있다. 본 논문에서는 시스템의 보안성을 향상시키기 위해 QPSK(Quadrature Phase Shift Keying) 변조 방식의 ESPAR 안테나를 사용하는 빔 공간 MIMO 시스템에 비예측성, 비주기성, 구현의 용이성, 민감한 초기조건 등의 특징을 가지고 있는 카오스 통신 알고리즘을 적용하여 QPSK 변조 방식의 ESPAR 안테나를 사용하는 카오스 빔 공간 MIMO 시스템을 구성하고 성능을 평가한다.

Transformer Parasitic Inductor and Lossless Capacitor-Assisted Soft-Switching DC-DC Converter with Synchronous Phase-Shifted PWM Rectifier with Capacitor Input Filter

  • Saitoh, Kouhei;Abdullah Al, Mamun;Gamage, Laknath;Nakaoka, Mutsuo;Lee, Hyun-Woo
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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    • pp.217-221
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    • 2001
  • This paper presents a new prototype of soft-switching DC-DC power converter with a high frequency transformer link which has two active power controlled switches in full bridge rectifier with capacitor input type smoothing filter. In this DC-DC converter, ZVS of the inverter in transformer primary side and ZCS of active rectifier area in secondary side can be completely achieved by taking advantage of parasitic inductor component of high-frequency transformer and loss less snubbing capacitors. Its operation principle and salient features are described. The steady-state operating characteristics of the proposed DC-DC power converter are illustrated and discussed on the basis of the simulation results in addition to the experimental ones obtained by 2kw-40kHz power converter breadboard set up.

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