• Parasites, Hosts and Diseases
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• 제38권4호
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• pp.209-236
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• 2000

The last two decades witnessed significant advances in the efforts of immune-parasitologists to elucidate the nature and role of the host mucosal defence mechanisms against intestinal nematode parasites. Aided by recent advances in basic immunology and biotechnology with the concomitant development of well defined laboratory models of infection, immunoparasitologists have more precisely analyzed and defined the different immune effector mechanisms during the infection; resulting in great improvement in our current knowledge and understanding of protective immunity against gastrointestinal (GI) nematode parasites. Much of this current understanding comes from experimental studies in laboratory rodents, which have been used as models of livestock and human GI nematode infections. These rodent studies, which have concentrated on Heligmosomoides polygyrus, Nippostrongylus brasiliensis, Strongyloides ratti/5. venezuelensis. Trichinella spiralis and trichuris muris infections in mice and rats, have helped in defining the types of T cell responses that regulate effector mechanisms and the effector mechanisms responsible for worm expulsion. In addition, these studies bear indications that traditionally accepted mechanisms of resistance such as eosinophilia and IgE responses may not play as important roles in protection as were previously conceived. In this review, we shall, from these rodent studies, attempt an overview of the mucosal and other effector responses against intestinal nematode parasites beginning with the indices of immune protection as a model of the protective immune responses that may occur in animals and man.

• ETRI Journal
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• 제34권6호
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• pp.950-953
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• 2012

Schottky barrier single electron transistors (SB-SETs) and Schottky barrier single hole transistors (SB-SHTs) are fabricated on a 20-nm thin silicon-on-insulator substrate incorporating e-beam lithography and a conventional CMOS process technique. Erbium- and platinum-silicide are used as the source and drain material for the SB-SET and SB-SHT, respectively. The manufactured SB-SET and SB-SHT show typical transistor behavior at room temperature with a high drive current of $550{\mu}A/{\mu}m$ and $-376{\mu}A/{\mu}m$, respectively. At 7 K, these devices show SET and SHT characteristics. For the SB-SHT case, the oscillation period is 0.22 V, and the estimated quantum dot size is 16.8 nm. The transconductance is $0.05{\mu}S$ and $1.2{\mu}S$ for the SB-SET and SB-SHT, respectively. In the SB-SET and SB-SHT, a high transconductance can be easily achieved as the silicided electrode eliminates a parasitic resistance. Moreover, the SB-SET and SB-SHT can be operated as a conventional field-effect transistor (FET) and SET/SHT depending on the bias conditions, which is very promising for SET/FET hybrid applications. This work is the first report on the successful operations of SET/SHT in Schottky barrier devices.

• 한국균학회소식:학술대회논문집
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• 한국균학회 2015년도 춘계학술대회 및 임시총회
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• pp.54-54
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• 2015

Crops lack genetic resistance to most necrotrophic soil-borne pathogens and parasitic nematodes that are ubiquitous in agroecosystems worldwide. To overcome this disadvantage, plants recruit and nurture specific group of antagonistic microorganisms from the soil microbiome to defend their roots against pathogens and other pests. The best example of this microbe-based defense of roots is observed in disease-suppressive soils in which the suppressiveness is induced by continuously growing crops that are susceptible to a pathogen. Suppressive soils occur globally yet the microbial basis of most is still poorly described. Fusarium wilt, caused by Fusarium oxysporum f. sp. fragariae is a major disease of strawberry and is naturally suppressed in Korean fields that have undergone continuous strawberry monoculture. Here we show that members of the genus Streptomyces are the specific bacterial components of the microbiome responsible for the suppressiveness that controls Fusarium wilt of strawberry. Furthermore, genome sequencing revealed that Streptomyces griseus, which produces a novel thiopetide antibiotic, is the principal species involved in the suppressiveness. Finally, chemical-genetic studies demonstrated that S. griseus antagonizes F. oxysporum by interfering with fungal cell wall synthesis. An attack by F. oxysporum initiates a defensive "cry for help" by strawberry root and the mustering of microbial defenses led by Streptomyces. These results provide a model for future studies to elucidate the basis of microbially-based defense systems and soil suppressiveness from the field to the molecular level.

• 한국안광학회지
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• 제7권2호
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• pp.223-228
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• 2002

기생충의 감염에 의하여 기생충증(parasitosis)이 유발하게되며 특히 안질환을 유발할 수 있는 기생충에는 원충류(Protozoa), 선충류(Nematodes), 조충류(Cestodes) 등이 있으며 이들 기생충들은 기생충과 매개체(Vector), 기생충과 숙주(Host), 숙주(Host)와 숙주(Host)의 연결고리가 있으며 이들의 관계가 오염이 되었거나 환경이 불량하여 숙주(Host)인 사람에게 기생하게되면 기생충의 독성, 숙주(Host)의 저항성 등에 따라 조직의 파괴나 염증, 알레르기 반응 등을 일으켜 질환을 일으키며 심하면 실명까지 유발케 한다. 이를 예방하려면 깨끗한 환경과 청결을 생활하여야 한다.

• 한국버섯학회지
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• 제9권4호
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• pp.198-201
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• 2011

Cobweb disease symptoms were observed in a mushroom farm in Buye, Korea during a disease survey in 2008-2011. Five isolates of Cladobotryum sp. were obtained from the infected caps and stipes. These isolates of Cladobotryum sp. were identified as C. mycophilum based on their morphological, cultural characteristics and analysis of the ITS sequences. Early symptoms were noticed as round, fleshy, yellowish brown lesions on mushroom caps. Late symptoms progressed when the parasitic fungus formed white cobweb circular colonies on dead or damaged pinheads, spread on the surface of the casing, and covered entirely fruiting bodies. Optimal temperature and pH for mycelial growth on MEA is $23^{\circ}C$ and 6.0. Microscopically the spores of the fungus are large and most 2~3 celled produced on vertically branched conidiophores. Mushroom caps turned dark brown and shrunk due to soft rot. Testing of sensitivity to selected fungicides showed that isolate was highly resistance to Mancozeb and Thiophanate-methyl, moderately sensitivity to Iprodione, and highly sensitivity to Benomyl, Prochloraz-Mn and Carbendazim.

• 전자공학회논문지D
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• 제35D권11호
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• pp.62-69
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• 1998

Hot carrier 스트레스후의 RF-nMOSFET의 DC 및 RF 특성열화를 분석하기 위해 기존의 열화 모델을 적용하였다. 드레인전류 열화보다 차단주파수 열화가 심하였으며 RF-nMOSFET의 열화변화율 n과 열화변수 m은 기존의 bulk MOSFET의 것과 같았다. Multi-finger 게이트 소자에서 finger수가 많을수록 열화가 적게 된 것은 큰 소스/드레인의 저항과 포화전압에 의한 것임을 알 수 있었다. 스트레스의 후의 RF성능 저하는 g/sub m/과 C/sub gd/의 감소와 g/sub ds/의 증가에 의한 것임을 알 수 있었다. 기판전류를 측정하므로 RF소자의 DC 및 RF특성 열화를 예견할 수 있었다.

• 조명전기설비학회논문지
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• 제29권7호
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• pp.22-27
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• 2015

In this paper, the problem of voltage unbalancing in series-connected multiple electric double-layer capacitors(EDLCs) is studied. Good understanding of this problem is required in order to increase reliability and stability of an energy storage system comprising EDLCs. Existing methods to settle voltage unbalancing cannot mitigate the problem enough for each cell, since most method have been applied to each module. For equalizing between cells, Zener diode which is one of passive method have been well examined in literature. However, Zener have well not used in balancing due to heating problem. In addition, It is difficult to choose Zener diode fitted rating voltage of EDLC, because of its internal resistance. Thus, we proposed passive balancing using Zener diode by analyzing parasitic element of Zener and EDLC. To experimentally confirm the balancing effect, we compared in two occasions which are with and without passive. As a result, proposed passive balancing circuit mitigated unbalanced voltage gap between EDLCs.

• Journal of Power Electronics
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• 제18권2호
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• pp.375-382
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• 2018

A novel active controlled primary current cutting-off zero-voltage and zero-current switching (ZVZCS) PWM three-level dc-dc converter (TLC) is proposed in this paper. The proposed converter has some attractive advantages. The OFF voltage on the primary switches is only Vin/2 due to the series connected structure. The leading-leg switches can obtain zero-voltage switching (ZVS), and the lagging-leg switches can achieve zero-current switching (ZCS) in a wide load range. Two MOSFETs, referred to as cutting-off MOSFETs, with an ultra-low on-state resistance are used as active controlled primary current cutting-off components, and the added conduction loss can be neglected. The added MOSFETs are switched ON and OFF with ZCS that is irrelevant to the load current. Thus, the auxiliary switching loss can be significantly minimized. In addition, these MOSFETs are not series connected in the circuit loop of the dc input bus bar and the primary switches, which results in a low parasitic inductance. The operation principle and some relevant analyses are provided, and a 6-kW laboratory prototype is built to verify the proposed converter.

• 전력전자학회논문지
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• 제20권1호
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• pp.65-71
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• 2015

This paper presents the efficiency analysis of a critical current mode interleaved PFC rectifier, in which each of three different semiconductor switches is employed as the active switch. The Si FET, SiC FET, and GaN FET are consecutively used with the prototype PFC rectifier, and the efficiency of the PFC rectifier with each different semiconductor switch is analyzed. An equivalent circuit model of the PFC rectifier, which incorporates all the internal losses of the PFC rectifier, is developed. The rms values of the current waveforms main circuit components are calculated. By adapting the rms current waveforms to the equivalent model, all the losses are broken down and individually analyzed to assess the conduction loss, switching loss, and magnetic loss in the PFC rectifier. This study revealed that the GaN FET offers the highest overall efficiency with the least loss among the three switching devices. The GaN FET yields 96% efficiency at 90 V input and 97.6% efficiency at 240 V, under full load condition. This paper also confirmed that the efficiency of the three switching devices largely depends on the turn-on resistance and parasitic capacitance of the respective switching devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.733-738
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• 2006

As the film transistor-liquid crystal display (TFTLCD) panels become larger and provide higher resolution, the propagation delay of row and column lines, the voltage modulation of Vcom, and the response time of liquid crystal affect the display images now more than in the past. It is more important to understand the electrical characteristic of TFT-LCD panels these days. This paper describes the electrical model of a 15-inch XGA ($1024{\times}768$) TFT-LCD panel. The parasitic resistance and capacitance of its panel are obtained by 3D simulation of a sub pixel. The accuracy of these data is verified by the measured values in an actual panel [1]. The developed panel simulation platform, the equivalent circuit of a 15-inch XGA panel, is simulated by HSPICE. The results of simulation are compared with those of experiment, according to changing the width of signal. Especially, the proposed simulation platform for modeling TFTLCD panels can be applied to large size LCD TVs. It can help panel and circuit designers to verify their ideas without making actual panels and circuits.