• 전력전자학회논문지
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• 제25권3호
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• pp.195-203
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• 2020

This paper presents a parasitic inductance reduction design method for the stable driving of GaN HEMT. To reduce the parasitic inductance, we propose a vertical lattice loop structure with multiple loops that is not affected by the GaN HEMT package. The proposed vertical lattice loop structure selects the reference loop and designs the same loop as the reference loop by layering. The design reverses the current direction of adjacent current paths, increasing magnetic flux cancellation to reduce parasitic inductance. In this study, we validate the effectiveness of the parasitic inductance reduction method of the proposed vertical lattice loop structure.

• Journal of Power Electronics
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• 제16권3호
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• pp.883-893
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• 2016

This paper presents a comprehensive analysis of the spurious turn-on phenomena in phase-shifted full-bridge (PSFB) converters. The conventional analysis of the spurious turn-on phenomenon does not establish in the PSFB converter as realizing zero voltage switching (ZVS). Firstly, a circuit model is proposed taking into account the parasitic capacitors and inductors of the transistors, as well as the parasitic elements of the power circuit loop. Second, an exhaustive investigation into the impact of all these parasitic elements on the spurious turn-on is conducted. It has been found that the spurious turn-on phenomenon is mainly attributed to the parasitic inductors of the power circuit loop, while the parasitic inductors of the transistors have a weak impact on this phenomenon. In addition, the operation principle of the PSFB converter makes the leading and lagging legs have distinguished differences with respect to the spurious turn-on problems. Design guidelines are given based on the theoretical analysis. Finally, detailed simulation and experimental results obtained with a 1.5 kW PSFB converter are given to validate proposed analysis.

• Journal of Power Electronics
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• 제18권3호
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• pp.892-901
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• 2018

SiC MOSFETs have been used to improve system efficiency in high frequency converters due to their extremely high switching speed. However, this can result in undesirable parasitic oscillations in practical systems. In this paper, models of the key components are introduced first. Then, theoretical formulas are derived to calculate the switching oscillation frequencies after full turn-on and turn-off in clamped inductive circuits. Analysis indicates that the turn-on oscillation frequency depends on the power loop parasitic inductance and parasitic capacitances of the freewheeling diode and load inductor. On the other hand, the turn-off oscillation frequency is found to be determined by the output parasitic capacitance of the SiC MOSFET and power loop parasitic inductance. Moreover, the shifting regularity of the turn-off maximum peak voltage with a varying switching speed is investigated on the basis of time domain simulation. The distortion of the turn-on current is theoretically analyzed. Finally, experimental results verifying the above calculations and analyses are presented.

• 센서학회지
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• 제19권3호
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• pp.191-196
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• 2010

In this paper, modeling of the non-ideal frequency response, especially "notch-and-spike" magnitude phenomenon and phase lag distortion, are discussed. To characterize the non-ideal frequency response, a new electro-mechanical simulation model based on SPICE is proposed using the driving loop of the capacitive vibratory gyroscope. The parasitic components of the driving loop are found to be the major factors of non-ideal frequency response, and it is verified with the measurement results.

• 한국전자파학회논문지
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• 제21권6호
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• pp.706-713
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• 2010

본 논문에서는 기생 루프 구조를 이용한 휴대 단말기용 5중 대역 초소형 루프 안테나를 제안한다. 제안된 안테나는 급전 모노폴, 기생 루프 구조를 가진 방사 루프 안테나, 추가 방사 소자로 구성되며, 매우 얇은 연성기판으로 제작된 안테나는 40 mm$\times$11 mm$\times$3 mm 크기의 유전체 캐리어에 장착된다. 제안된 안테나의 대역폭은 저대역에서 402 MHz(773~1,175 MHz)이고, 고대역에서 583 MHz(1,622~2,205 MHz)이다. 그 결과, 제안된 안테나는 VSWR 3:1 기준으로 GSM850, GSM900, DCS1800, PCS1,900, WCDMA 대역을 모두 만족함을 확인할 수 있었고, 방사 패턴, 이득, 효율 측면에서 휴대용 단말기에 적용되기에 적합한 성능을 얻었다. 따라서 제안된 안테나는 초소형 다중 대역 휴대 단말기의 응용 분야에 적합할 것으로 판단된다.

• Journal of Power Electronics
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• 제18권4호
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• pp.1255-1267
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• 2018

Parasitic parameters have a larger influence on Silicon Carbide (SiC) devices with an increase of the switching frequency. This limits full utilization of the performance advantages of the low switching losses in high frequency applications. By combining a theoretical analysis with a experimental parametric study, a mathematic model considering the parasitic inductance and parasitic capacitance is developed for the basic switching circuit of a SiC MOSFET. The main factors affecting the switching characteristics are explored. Moreover, a fast-switching double pulse test platform is built to measure the individual influences of each parasitic parameters on the switching characteristics. In addition, guidelines are revealed through experimental results. Due to the limits of the practical layout in the high-speed switching circuits of SiC devices, the matching relations are developed and an optimized layout design method for the parasitic inductance is proposed under a constant length of the switching loop. The design criteria are concluded based on the impact of the parasitic parameters. This provides guidelines for layout design considerations of SiC-based high-speed switching circuits.

• 한국통신학회논문지
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• 제13권5호
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• pp.444-452
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• 1988

高利得과 廣帶域 特性을 동시에 실현하기 위하여 원형 루프 안테나를 傳送線路에 의하여 交叉給電시킨 素子와 無給電 素子로 구성한 LP형태의 안테나를 제시했다. 제시한 안테나를 모멘트法에 의하여 數値解析하여 電流分布, 入力임피던스, 電力利得 및 指向性 패턴 등을 對數週期 다이폴 안테나(LPDA)와 比較 檢討하였다. 그 결과 本 論文에서 제시된 안테나는 廣帶域 特性 밑 高利得을 갖고 周波數에 따른 E, H面패턴의 변화가 거의 없었으며 LPDA보다 우수한 性能을 갖는 것으로 확인 되었다.

• Journal of Power Electronics
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• 제15권4호
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• pp.1035-1046
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• 2015

This study presents a practical implementation of a multi-mode two-phase interleaved boost converter for fuel cell electric vehicle application. The main operating modes, which include two continuous conducting modes and four discontinuous conducting modes, are discussed. The boundaries and transitions among these modes are analyzed with consideration of the inductor parasitic resistance. The safe operational area is analyzed through a comparison of the different operating modes. The output voltage and power characteristics with open-loop or closed-loop operation are also discussed. Key performance parameters, including the DC voltage gain, input ripple current, output ripple voltage, and switch stresses, are presented and supported by simulation and experimental results.

• 한국전자파학회논문지
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• 제18권1호
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• pp.24-30
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• 2007

본 논문에서는 편파 다이버시티를 구현하기 위한 바람개비 형태의 루프 안테나를 제안하였다. 제안된 루프 안테나의 원주는 일반적인 소형 루프 안테나의 길이(${\lambda}$)보다 10배가 크나, 소형 루프 안테나와 같이 수평면에서 무지향성 패턴을 얻을 수 있다. 기생 루프 안테나의 사용을 통해 안테나의 임피던스 정합 문제를 해결하고, 등가 회로를 제시하여 제안된 안테나의 설계 의도가 수식적으로 설명될 수 있음을 보였다. 제안된 안테나는 2.6 GHz에서 설계, 제작되었으며 정재파비 2:1 이하를 기준으로 6 %의 대역폭, 편파 분리도 15 dB, 이득 1.5 dBi의 시뮬레이션 결과를 나타내었고, 시뮬레이션 결과와 측정 결과가 잘 일치하였다.

• 전력전자학회논문지
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• 제21권1호
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• pp.88-93
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• 2016

LCL filters are widely used in high-order harmonics attenuation of output currents in grid-connected inverters. However, output currents of grid-connected inverters with LCL filters can become unstable because of the resonance of the filters. Given that the characteristics of output currents in inverters mostly depend on filter performance, the exact analysis of filters by considering parasitic components is necessary for both harmonics attenuation and current control. LCL filters have three or four parasitic components: the series and/or parallel resistance of the filter capacitor and the series resistance of the two filter inductors. Most studies on LCL filters have focused on the parasitic components of the filter capacitor. Although several studies have addressed the parasitic components of the filter inductor at the inverter side, no study has yet investigated the concurrent effects of series resistance in both filter inductors in detail. This paper analyzes LCL filters by considering series resistance in both filter inductors; it proposes an active damping method based on the virtual series resistance of LCL filters. The performance of the proposed active damping is then verified through both simulation and experiment using Hardware-in-the-Loop Simulator(HILS).