• 제목/요약/키워드: Paper-based analytical devices

검색결과 62건 처리시간 0.03초

종이기반 미세유체 분석소자를 활용한 현장검사 기술과 그 응용 (Recent Advances in a Microfluidic Paper-based Analytical Devices and its Point of Care Testing Applications)

  • 유용경;김천중;이준우;이정훈
    • 세라미스트
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    • 제21권3호
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    • pp.293-301
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    • 2018
  • Paper-based analytical devices (${\mu}PAD$) are highly advantageous for portable diagnostic systems owing to their low costs and ease of use. ${\mu}PADs$ are considered as the best candidates for realizing the World Health Organization (WHO) ASSURED criteria: affordable, sensitive, specific, user-friendly, rapid and robust, equipment-free, and deliverable to end users. However, they have several limitations such as low sensitivity and accuracy. This article reports a mini review for a micro-fluidic paper-based analytical devices (${\mu}PAD$), especially for addressing low sensitivity and accuracy issues.

Direct Detection of Water-dissolved Ammonia Using Paper-based Analytical Devices

  • Yeong Beom Cho;Duc Cuong Nguyen;Si Hiep Hua;Yong Shin Kim
    • 센서학회지
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    • 제32권2호
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    • pp.67-74
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    • 2023
  • A microfluidic paper-based analytical device (µPAD) is proposed for the selective detection of ammonia in water by using the modified Berthelot reagent and a fluidic channel consisting of hollow paper. The modified Berthelot reagents were uniformly dispersed in cyclohexane and then immobilized in a detection zone of the µPAD. The loading position of the reagents and the type of a sample flow channel were optimized to achieve a sensitive ammonia detection within a short analytical time. The NH3 µPAD exhibits a linear colorimetric response to the concentration of ammonia dissolved in water in the range of 1-100 mg L-1, and its limit-of-detection is 1.75 mg L-1. In addition, the colorimetric response was not influenced by the addition of 100 mg L-1 nitrogen containing compounds (sodium nitrate, sodium nitrite, uric acid, hydroxylamine, butylamine, diethylamine) or inorganic salts (NaCl, Na2HPO4), presenting the enough selectivity in the detection of water-dissolved ammonia against possible interferents.

회전각도를 이용한 알부민 농도 측정용 3차원 종이 칩 (Angular-based Measurement for Quantitative assay of Albumin in three-dimensional Paper-based analytical Device)

  • 김동호;정성근;이창수
    • Korean Chemical Engineering Research
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    • 제58권2호
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    • pp.286-292
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    • 2020
  • 본 연구에서는 별도의 이미지 분석 장비를 사용하지 않고 정량적으로 알부민의 농도를 측정할 수 있는 회전각도를 이용한 3차원 종이 칩(3D-PADs)를 제시한다. 변색된 구간의 회전각도를 측정하는 간단한 방법으로 검출을 시연하였다. 3D-PADs는 왁스 프린터를 이용한 인쇄와 라미네이팅 과정을 거쳐 빠르게 제작할 수 있다. 3D-PADs는 샘플의 알부민을 검출하기 위하여 citrate buffer와 tetrabromophenol blue를 흡수시켰다. 3D-PAD의 흡수패드에 샘플 용액을 흡수시키면, 샘플 용액은 형성된 유로를 통하여 수직 및 수평 흐름을 통해 분석 구간으로 흐른다. 변색된 구간의 회전각도는 특정한 알부민의 농도를 나타내며, 알부민 측정의 신뢰할 수 있는 값임을 확인할 수 있었다.

Paper-Based Bipolar Electrochemistry

  • Renault, Christophe;Scida, Karen;Knust, Kyle N.;Fosdick, Stephen E.;Crooks, Richard M.
    • Journal of Electrochemical Science and Technology
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    • 제4권4호
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    • pp.146-152
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    • 2013
  • We demonstrate that carbon electrodes screen-printed directly on cellulose paper can be employed to perform bipolar electrochemistry. In addition, an array of 18 screen-printed bipolar electrodes (BPEs) can be simultaneously controlled using a single pair of driving electrodes. The electrochemical state of the BPEs is read-out using electrogenerated chemiluminescence. These results are important because they demonstrate the feasibility of coupling bipolar electrochemistry to microfluidic paperbased analytical devices (${\mu}PADs$) to perform highly multiplexed, low-cost measurements.

A Time-Constrained Information Processing Model in Ubiquitous Environments

  • Hur, Sun;Lee, Hyun;Shin, Dong-Min;Lee, Won-Suk
    • ETRI Journal
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    • 제29권4호
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    • pp.489-496
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    • 2007
  • As pervasive computing is widely adopted and reliable networks are becoming more easily accessible, there is a rapidly growing need to develop a mechanism to analyze and evaluate the performance of ubiquitous environments. This paper presents an information processing model which characterizes a ubiquitous environment where a variety of pieces of information need to be exchanged among devices within a system. The proposed model not only provides analytical tools to evaluate the performance of devices, but also makes it possible to identify key factors in designing a ubiquitous environment. For illustrative purposes, a test bed is constructed and the performance of the system is assessed based on the proposed model.

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고출력 GaN-based LED의 열적 설계 및 패키징

  • 신무환
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.24-24
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    • 2003
  • Research activity in the III-V nitrides materials system has increased markedly in the past several years ever since high-brightness blue light-emitting diodes (LEDs) became commercially available. Despite of excellent optical properties of the GaN, however, inherently poor thermal property of the sapphire used as a substrate material n these devices may lead to thermal degradation of devices, especially during their high power operation. Therefore, dependable thermal analysis and packaging schemes of GaN-based LEDs are necessary for solid lighting applications under high power operation. In this paper, emphasis will be placed upon thermal design of GaN-based LEDs. Thermal measurements of LEDs on chip and packaging scale were performed using the liquid crystal thermographic technology and micro thermocouples for different bias conditions. By a series of optical arrangement, hot spots with specific transition temperatures were obtained with increasing input power. Thermal design of LEDS was made using the finite element method and analytical unit temperature profile approach with optimal boundary conditions. The experimental results were compared to the simulated data and the results agree well enough for the establishment of dependable prediction of thermal behavior in these devices. The paper will present a more detailed understanding of the thermal analysis of the GaN-based blue and white LEDs for high power applications.

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Vibration control of mechanical systems using semi-active MR-damper

  • Maiti, Dipak K.;Shyju, P.P.;Vijayaraju, K.
    • Smart Structures and Systems
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    • 제2권1호
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    • pp.61-80
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    • 2006
  • The concept of structural vibration control is to absorb vibration energy of the structure by introducing auxiliary devices. Various types of structural vibration control theories and devices have been recently developed and introduced into mechanical systems. One of such devices is damper employing controllable fluids such as ElectroRheological (ER) or MagnetoRheological (MR) fluids. MagnetoRheological (MR) materials are suspensions of fine magnetizable ferromagnetic particles in a non-magnetic medium exhibiting controllable rheological behaviour in the presence of an applied magnetic field. This paper presents the modelling of an MRfluid damper. The damper model is developed based on Newtonian shear flow and Bingham plastic shear flow models. The geometric parameters are varied to get the optimised damper characteristics. The numerical analysis is carried out to estimate the damping coefficient and damping force. The analytical results are compared with the experimental results. The results confirm that MR damper is one of the most promising new semi-active devices for structural vibration control.

High-Frequency GaN HEMTs Based Point-of-Load Synchronous Buck Converter with Zero-Voltage Switching

  • Lee, Woongkul;Han, Di;Morris, Casey T.;Sarlioglu, Bulent
    • Journal of Power Electronics
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    • 제17권3호
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    • pp.601-609
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    • 2017
  • Gallium nitride (GaN) power switching devices are promising candidates for high switching frequency and high efficiency power conversion due to their fast switching, low on-state resistance, and high-temperature operation capability. In order to facilitate the use of these new devices better, it is required to investigate the device characteristics and performance in detail preferably by comparing with various conventional silicon (Si) devices. This paper presents a comprehensive study of GaN high electron mobility transistor (HEMT) based non-isolated point-of-load (POL) synchronous buck converter operating at 2.7 MHz with a high step-down ratio (24 V to 3.3 V). The characteristics and performance of GaN HEMT and three different Si devices are analytically investigated and the optimal operating point for GaN HEMT is discussed. Zero-voltage switching (ZVS) is implemented to minimize switching loss in high switching frequency operation. The prototype circuit and experimental data support the validity of analytical and simulation results.

베이지안 네트워크의 학습에 기반한 모바일 환경에서의 사용자 적응형 음식점 추천 서비스 (User Adaptive Restaurant Recommendation Service in Mobile Environment based on Bayesian Network Learning)

  • 김희택;조성배
    • 한국HCI학회:학술대회논문집
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    • 한국HCI학회 2009년도 학술대회
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    • pp.6-10
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    • 2009
  • 네트워크의 발달로 인한 정보량의 증가와 모바일 디바이스의 폭넓은 보급으로, 모바일 플랫폼 상에서의 추천 서비스가 최근 각광받고 있다. 기존에 진행되었던 연구인 사용자의 선호도를 반영한 음식점 추천 시스템은 사용자의 선호도를 효과적으로 모델링 하기 위해 베이지안 네트워크를 사용하며, 음식첨 추천을 위해 계층형 분석방법(AHP)을 이용한다. 기존 시스템에서 사용했던 고정된 형태의 사용자 선호도 추론 모델은 변화하는 사용자의 선호도에 대응하지 못하며, 추론 모델을 구축하기 위해 방대한 분량의 설문조사가 선행되어야만 한다는 한계를 가졌다. 본 논문에서는 사용자의 선호도를 학습하기 위해 사용자 요청 정보를 이용한 베이지안 네트워크 학습 방법을 제안한다. 제안하는 방법은 모바일 디바이스와 데스크탑을 이용해 구현되었으며, 실험을 통해 제안하는 방법의 가능성을 보였다.

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Analysis of Doping Profile Dependent Threshold Voltage for DGMOSFET Using Gaussian Function

  • Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • 제9권3호
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    • pp.310-314
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    • 2011
  • This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson's equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage roll-off is very important short channel effects(SCEs) for nano structures since it determines turn on/off of MOSFETs. Threshold voltage has to be constant with decrease of channel length, but it shows roll-off due to SCEs. This analytical transport model is used to obtain the dependence of threshold voltage on channel doping profile for DGMOSFET profiles. Also we have analyzed threshold voltage for structure of channel such as channel length and gate oxide thickness.