• Proceedings of the KWS Conference
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• 2006.10a
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• pp.175-177
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• 2006

Electrically Conductive Adhesives(ECAs) with solderable particles have been developed as an alternative to Pb-free solders. Our previous study proved that good wettability of solder particle is a prerequisite for the establishment of conduction paths. In this paper, two types of ECAs were formulated and the wetting characteristic low-melting-point Sn-In solder on Cu and Ni/Au pads was investigated. It was found that Sn-In solder in the developed resin material with reduction capability shows good wettability, especially on Cu pad.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1880-1884
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• 2008

Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-steop CMP consists of Cu CMP and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the buffing is performed various conditions as a cleaning process. The buffing process combined mechanical cleaning by friction between a wafer and a buffing pad and chemical cleaning by buffing solution consists of tetramethyl ammonium hydroxide (TMAH)/benzotriazole(BTA).

• Tribology and Lubricants
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• v.27 no.2
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• pp.95-100
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• 2011

The brake disc materials for railway vehicle have been mainly used cast-iron. The brake disc and pad should be light, resist to a thermal crack and absorb enough friction energy. In order to satisfy this requirement, aluminum alloy brake disc for railway vehicle has been newly developed. The aluminum itself has not been considered the friction material for railway vehicle. However, in the case of aluminum composite with dispersed ceramic particles, friction characteristics, resistance to wear and heat are much improved. In the present study, aluminum composite brake disc of 20% ceramic particle and three kinds of organic pads have been tested in dynamometer. The results show that Al MMC brake disc and pad have good friction coefficient and wear rate, and thermal cracks in brake disc have not been initiated. Also, the Al MMC brake disc can be applied to railway vehicle of 150 km/h.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.56-56
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• 2009

반도체 device가 점점 고집적화, 다층화 되면서 막질의 평탄화를 위한 CMP (chemical mechanical planarization) 공정은 반도체 제작 공정에서 필수 요건이 되었다. 특히 pad conditioning은 CMP 공정 중, 막질의 제거율과 균일도를 유지시키기 위한 중요한 공정이다. 하지만, conditioner를 장시간 사용할 경우 slurry residue와 같은 잔류 오염물질들이 conditioner의 표면의 오염을 유발할 수 있고 이로 인해 conditioner의 수명이 단축되거나 웨이퍼 표면에 결함을 유발할 수도 있다. 본 연구에서는 이를 방지하기 위해 vapor SAM을 이용하여 Ni conditioner 표면에 소수성 박막을 증착하여 오염여부를 평가해 보았다. 먼저, Ni wafer를 이용하여 증착 온도와 압력에 따라 소수성 박막을 증착하여 표면특성을 평가해 보았다. 증착전과 후에 Ni wafer 표면의 접촉각은 contact angle analyzer (Phoenix 400, SEO, Korea)를 이용하여 측정하였다. 박막 표면 형상과 거칠기는 AFM (XE-100, PSIA, Korea)를 이용하여 평가되었고 묘면 성분 분석을 위해 FT-IR (Nicolet 6700, Thermo Scientific, USA)이 사용되었다. SEM (S-4800, Hitach, Japan)은 박막 증착 전과 후의 conditioner를 이용하여 실제 conditioning후 conditioner 표면의 particle 오염정도를 관찰하기 위해 사용되었다. 또한, conditioner 표면에 실제 오염되어있는 particle 개수를 평가하기 위해 particle size analyzer (Accusizer 780A, Particle Sizing Systems Co., USA)을 사용하였다. 본 실험을 통해 최적 증착 조건을 확립하였으며 실제 conditioner 표면에 소수성 박막을 증착 후 $100^{\circ}$ 이상의 높은 contact angle을 확인할 수 있었다. 또한, 소수성 박막이 증착된 conditioner의 경우 실제 conditioning후 표면 particle 오염이 현저히 감소되었음을 확인할 수 있었다.

• Particle and aerosol research
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• v.12 no.4
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• pp.145-150
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• 2016

During the chemical mechanical planarization (CMP) process, slurry that comprises abrasive particles can directly affect the CMP performance and quality. Mainly, the large particles in the slurry can generate the defects on the wafer. Thus, many kinds of filters have been used in the CMP process to remove unwanted over-sized particles. Among these filters, the point-of-use (POU) filter is used just before the slurry is supplied onto the CMP pad. In the CMP research field, analysis of the POU filter has been relatively exceptional, and previous studies have not focused on the standardized filtration efficiency (FE) or filter performance. Furthermore, conventional evaluation methods of filter performance are not appropriate for POU filters, as the POU filter is not a membrane type, but is instead a depth type roll filter. In order to accurately evaluate the POU filter, slurry FE according to particle size was measured in this study. Additionally, a CMP experiment was conducted with filtered slurry to demonstrate the effects of filtered slurry on CMP performance. Depending on the flow rate and the filter retention size, the FE according to particle size was different. When the small and large particles have different FEs, the total filtration efficiency (TFE) can still have a similar value. For this reason, there is a need to measure the FE with respect to the particle size to verify the effects of the POU filter on the CMP process.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1891-1894
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• 1999

We can classify the scratches after CMP process into micro-scratch and macro-scratches according to the scratch size, scratch intensity and defect map, etc. The micro-scratches on wafer after CMP process are discussed in this paper. From many causes, major factor that influences the formation of micro-scratch is known as particle size distribution of slurry.(1) It is indefinite what size or type of particle can cause micro-scratch on wafer surface, but there is possibility caused by large particle over 1um. The best way for controlling these large particle to inflow is to use the slurry filter on POU(Point of user). But the slurry filter(especially, depth-type filter) has sometimes the problem which makes more sever micro-scratches on wafer surface after CMP. We studied that depth-type slurry filter has what kind of week-points and the number of scratch could be reduced by lowering slurry flow rate and by using high spray bar which sprays DIW on polishing pad with high pressure.

• Tribology and Lubricants
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• v.35 no.5
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• pp.274-285
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• 2019

Chemical mechanical polishing (CMP), which is a material removal process involving chemical surface reactions and mechanical abrasive action, is an essential manufacturing process for obtaining high-quality semiconductor surfaces with ultrahigh precision features. Recent rapid growth in the industries of digital devices and semiconductors has accelerated the demands for processing of various substrate and film materials. In addition, to solve many issues and challenges related to high integration such as micro-defects, non-uniformity, and post-process cleaning, it has become increasingly necessary to approach and understand the processing mechanisms for various substrate materials and abrasive particle behaviors from a tribological point of view. Based on these backgrounds, we review recent CMP R&D trends in this study. We examine experimental and analytical studies with a focus on substrate materials and abrasive particles. For the reduction of micro-scratch generation, understanding the correlation between friction and the generation mechanism by abrasive particle behaviors is critical. Furthermore, the contact stiffness at the wafer-particle (slurry)-pad interface should be carefully considered. Regarding substrate materials, recent research trends and technologies have been introduced that focus on sapphire (${\alpha}$-alumina, $Al_2O_3$), silicon carbide (SiC), and gallium nitride (GaN), which are used for organic light emitting devices. High-speed processing technology that does not generate surface defects should be developed for low-cost production of various substrates. For this purpose, effective methods for reducing and removing surface residues and deformed layers should be explored through tribological approaches. Finally, we present future challenges and issues related to the CMP process from a tribological perspective.

• IEIE Transactions on Smart Processing and Computing
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• v.4 no.5
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• pp.297-304
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• 2015

A multilayer gaseous detector has been developed for fast dose-verification measurements of raster-scan-mode therapeutic beams in particle therapy. The detector, which was constructed with eight thin parallel-plate ionization chambers (PPICs) and polymethyl methacrylate (PMMA) absorber plates, is closely tissue-equivalent in a beam's eye view. The gas-electron signals, collected on the strips and pad arrays of each PPIC, were amplified and processed with a continuous charge.integration mode. The detector was tested with 190-MeV raster-scan-mode beams that were provided by the Proton Therapy Facility at Samsung Medical Center, Seoul, South Korea. The detector responses of the PPICs for a 190-MeV raster-scan-mode proton beam agreed well with the dose data, measured using a 2D ionization chamber array (Octavius model, PTW). Furthermore, in this study it was confirmed that the detector simultaneously tracked the doses induced at the PPICs by the fast-oscillating beam, with a scanning speed of 2 m s-1. Thus, it is anticipated that the present detector, composed of thin PPICs and operating in charge.integration mode, will allow medical scientists to perform reliable fast dose-verification measurements for typical dynamic mode therapeutic beams.

• International Journal of Advanced Culture Technology
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• v.3 no.1
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• pp.13-20
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• 2015

The self-cleaning properties of nano-zinc oxide on cotton fabrics have been investigated. The cotton fabric has been prepared by pad-dry method. The nano-zinc oxide was encapsulated in the polystyrene particle by mini-emulsion process prior used. The loading amount of zinc oxide particles into the mini-emulsion were various from 1% wt to 40%wt. The particles sizes of ZnO-encapsulated polystyrene mini-emulsion were determined using dynamic light scattering. It was showed that the particle size of the mini-emulsion was in the range of 124-205 nm. The topography and morphology of ZnO-encapsulated polystyrene which coated on cotton fabrics was observed using scanning electron microscopy. The crystal structure of ZnO-coated on cotton fabrics was explored by X-ray diffraction spectroscopy. The photocatalytic activities of zinc oxide were present through the self-cleaning properties. The presents of the zinc oxide on cotton fabrics significantly showed the improving of the self-cleaning properties under UV radiation.

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.98-102
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• 2007

The stability of slurry and removal rate during recycling of colloidal silica slurry was evaluated in silicon wafer polishing. The particle size distribution, pH, and zeta potential were measured to investigate the stability of colloidal silica. Large particles appeared as recycling time increased while average size of slurry did not change. Large particles were identified by EDS(energy dispersive spectrometer) as foreign substances from pad or abraded silicon flakes during polishing. As the recycling time increased, pH of slurry decreased and removal rate of silicon reduced but zeta potential decreased inversely. Hence, it could be mentioned that decrease of removal rate is related to consumption of $OH^-$ ions during recycling. Attention should be given to the control of pH of slurry during polishing.