• Journal of the Microelectronics and Packaging Society
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• v.14 no.2 s.43
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• pp.59-63
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• 2007

This paper presented a low-cost thick film gas sensor module, which was based on simple PCB (Printed Circuit Board) process. The proposed sensor module included a $NO_2/H_2$ gas sensor, a relative humidity sensor, and a heating element. The $NO_2/H_2$ gas and relative humidity sensors were realized by screen-printing $SnO_2,\;BaTiO_3$ nano-powders on IDTS (Interdigital Transducer) of a PCB substrate, respectively. At first 1% $H_2$ gas flowed into the sensor chamber. After 4 min, air filled the chamber while $H_2$ gas flow stopped. This experiment was performed repeatedly. The Identical procedure was used for the $NO_2$ detection. The result for sensing $H_2$ gas showed the increase of voltage from 0.8V to 3.5V due to the conductance increase and its reaction response time by hydrogen flow was 65 sec. $NO_2$ sensing results showed 2.7 V voltage drop due to the conductance decrease and its response time was 3 sec through a voltage monitoring.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.1-5
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• 2006

We prepared 80 nm-thick TiSix on each 70 nm-thick amorphous silicon and polysilicon substrate using an RF sputtering with $TiSi_2$ target. TiSix composite silicide layers were stabilized by rapid thermal annealing(RTA) of $800^{\circ}C$ for 20 seconds. Line width of $0.5{\mu}m$ patterns were embodied by photolithography and dry etching process, then each additional annealing process at $750^{\circ}C\;and\;850^{\circ}C$ for 3 hours was executed. We investigated the change of sheet resistance with a four-point probe, and cross sectional microstructure with a field emission scanning electron microscope(FE-SEM) and transmission electron microscope(TEM), respectively. We observe an abrupt change of resistivity and voids at the silicide surface due to interdiffusion of silicide and composite titanium silicide in the amorphous substrates with additional $850^{\circ}C$ annealing. Our result implies that the electrical resistance of composite titanium silicide may be tunned by employing appropriate substrates and annealing condition.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.51-55
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• 2006

The green emitting high performance OLEDs using the $Alq_3$-C545T fluorescent system have been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4'-tris(2-naphthylphenyl-phenylamino)-triphenylamine] as a hole injection material and NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as a hole transport material were deposited on the ITO(indium thin oxide)/glass substrate by vacuum evaporation. And then, green color emission layer was deposited using $Alq_3$ as a host material and C-545T[10-(2-benzothiazolyl)-1,1,7,7- tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-[1]/benzopyrano[6,7,8-ij]-quinolizin-11-one] as a dopant. Finally, small molecule OLEDs with structure of ITO/2-TNATA/NPB/$Alq_3$:C545T/$Alq_3$/LiF/Al were obtained by in-situ deposition of $Alq_3$, LiF and Al as the electron transport material, electron injection material and cathode, respectively. Green OLEDs fabricated in our experiments showed the color coordinate of CIE(0.29, 0.65) and the maximum power efficiency of 7.3 lm/W at 12 V with the peak emission wavelength of 521 nm.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.23-29
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• 2006

Ultrasonic soldering of Si-wafer to FR-4 PCB at ambient temperature was investigated. The UBM of Si-substrate was Cu/ Ni/ Al from top to bottom with thickness of $0.4{\mu}m,\;0.4{\mu}m$, and $0.3{\mu}m$ respectively. The pad on FR-4 PCB comprised of Au/ Ni/ Cu from top to bottom with thickness of $0.05{\mu}m,\;5{\mu}m$, and $18{\mu}m$ respectively. Sn-3.5wt%Ag foil rolled to $100{\mu}m$ was used for solder. The ultrasonic soldering time was varied from 0.5 s to 3.0 s and the ultrasonic power was 1,400 W. The experimental results show that a reliable bond by ultrasonic soldering at ambient temperature was obtained. The shear strength increased with soldering time up to a maximum of 65 N at 2.5 s. The strength decreased to 34 N at 3.0 s because cracks were generated along the intermetallic compound between Si-wafer and Sn-3.5wt%Ag solder. The Intermetallic compound produced by ultrasonic soldering between the Si-wafer and the solder was $(Cu,Ni)_{6}Sn_{5}$.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.83-90
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• 2017

In this paper, we evaluated the solderability of thin electroless nickel-electroless palladium-immersion gold (ENEPIG) plating layer for fine-pitch package applications. Firstly, the wetting behavior, interfacial reactions, and mechanical reliability of a Sn-3.0Ag-0.5Cu (SAC305) solder alloy on a thin ENEPIG coated substrate were evaluated. In the wetting test, maximum wetting force increased with increasing immersion time, and the wetting force remained a constant value after 5 s immersion time. In the initial soldering reaction, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) and P-rich Ni layer formed at the SAC305/ENEPIG interface. After a prolonged reaction, the P-rich Ni layer was destroyed, and $(Cu,Ni)_3Sn$ IMC formed underneath the destroyed P-rich Ni layer. In the high-speed shear test, the percentage of brittle fracture increased with increasing shear speed.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.75-81
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• 2017

The effects of KOH pretreatment and annealing conditions on the interfacial adhesion and the reliability between epoxy resin and polyimide substrate in the flexible printed circuit board were quantitatively evaluated using $180^{\circ}$ peel test. The initial peel strength of the polyimide without the KOH treatment was 29.4 g/mm and decreased to 10.5 g/mm after 100hrs at $85^{\circ}C/85%$ R.H. temperature/humidity treatment. In case of the polyimide with annealing after KOH treatment, initial peel strength was 29.6 g/mm and then maintained around 27.5 g/mm after $85^{\circ}C/85%$ R.H. temperature/humidity treatment. Systematic X-ray photoelectron spectroscopy analysis results showed that the peel strength after optimum annealing after KOH treatment was maintained high not only due to effective recovery of the polyimide damage by the polyimide surface treatment process, but also effective removal of metallic ions and impurities during various wet process.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.87-92
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• 2016

The importance of heat dissipation for the electric device modules along the thickness direction is increasing. Two types of two-layered materials, metal-metal bonding and dielectric-metal bonding, have been fabricated by roll bonding process and a thermal diffusivity of the specimens was measured along the thickness direction. The thermal diffusivity of specimens with metal-metal bonding measured by light flash analysis (LFA) showed a same value independent on the direction of heat flow. However, the thermal diffusivity of specimens with dielectric-metal bonding showed a big difference of 17.5% when the direction of heat flow changed oppositely in the LFA process. The measured thermal diffusivity of specimens when the heat flows from metal to dielectric direction showed smaller value of 17.5% compared to the value when the heat flow from dielectric to metal direction. The difference in thermal diffusivity of specimens with dielectric-metal bonding dependence on direction of heat flow is due to the electron-phonon resistance that occurred transfer process of electron energy to phonon energy near the interface.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.93-99
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• 2016

In this paper, we investigated the mechanical and electrical reliability of silver nanowire (AgNW) films. In particular, the durability and reliability of AgNW films were studied when the AgNW film was subjected to the bending deformation under current flow. The electrical durability of AgNW was evaluated by observing changes in heat generation and current density occurring in AgNW through voltage and current tests. The AgNW film showed a constant resistance change up to a bending radius of 2 mm and 200,000 cycles in the bending fatigue tests. The over-coating layer has an effect of improving the durability of the AgNW film. In the case of AgNW with the over-coating layer, heat was uniformly dissipated on the surface of AgNW film, whereas in the case of AgNW film without the over-coating layer, heat was generated locally. In the bending test under the current flow, the current density of the AgNW film was continuously decreased up to 52.4%. During bending, the AgNW was deformed due to mechanical deformation such as tensile, bending and sliding of the AgNW, consequently contact resistance of the AgNW was increased, leading to a electrical breakdown of AgNW by Joule heating. It was found that the application of the over-coating layer can improve the electrical and mechanical reliability of the AgNW film.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.1-5
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• 2018

In this study, the effects of indium (In) doping in InGaN/GaN multi quantum well (MQW) on photoelectrochemical (PEC) properties were investigated. Each quantum well (QW) layer with controlled In content were grown on sapphire substrate. Before growth of MQW, GaN growth consisted of various stages in the following order: buffer GaN growth, undoped GaN growth, and Si-doped n-type GaN growth. Absorbance of InGaN/GaN MQW having different In composition was higher than that of the InGaN/GaN MQW having a constant In composition. It indicates that InGaN layer having different In composition absorbs light having a broad spectrum energy. These results are in agreement with those in photoluminescence (PL). After evaluation of PEC properties, it demonstrated that InGaN/GaN MQW having different In composition was improved InGaN/GaN MQW having constant In composition in PEC water splitting ability.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.49-53
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• 2018

Since various methods to form well-aligned nano-/micro- patterns are underlying technologies to fabricate next generation wearable electronic devices, many efforts have been made to realize finer patterns in recent years. Among lots of patterning methods, the present invention includes a nano-transfer printing (n-TP) process which is advantageous in that a processing cost is low and high-resolution patterns can be formed within a short processing time. We successfully achieved pattern formation of highly ordered Pt lines with line-width of 250 nm, 500 nm, and $1{\mu}m$ on transparent and flexible substrates. In addition, we analyzed the durability of the patterns, showing excellent stability of line-shape even after a physical and repeated bending test of 500 times using a bending machine. As a result, it is expected that a n-TP process is very useful for forming various metal patterns, and it is also expected to be applied to wiring and interconnection technology of next generation flexible electronic devices.