• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.222-225
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• 2011

Lead zirconate titanate (PZT) films were fabricated on Pt/Ti/$SiO_2$/Si substrate by the sol-gel method using a sol containing poly(N-vinylpyrrolidone) (PVP). PVP in alkoxide solutions can suppress the condensation reaction in gel films during heat treatment, and increase the viscosity of alkoxide solutions. Single-phase PZT films as thick as 1 ${\mu}m$ were deposited by repetitive coating with successive third-step heat treatments at 150$^{\circ}C$, 350$^{\circ}C$ and 650$^{\circ}C$. After heat treatment, the films were crack free, and optically transparent. As a result, we demonstrated a PZT film with a PVP molar ratio of 0.5, which has a permittivity of 734, a dielectric loss of 0.042, a $P_r$ of 40.5 ${\mu}C/cm^2$ and an $E_c$ of 156 kV/cm.

• Proceedings of the KIEE Conference
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• 2002.11d
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• pp.194-196
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• 2002

액정표시장치(LCD; Liquid Crystal Display)는 표현된 정보를 가시화하기 위해 램프의 백라이트가 필수적인데 대부분 부피가 작고 효율과 휘도특성이 좋은 냉음극 방전램프가 사용된다. 램프는 고압으로 구동되며 높은 전압을 얻기 위해 일반적으로 권선 변압기를 사용한다. 그러나 권선 변압기의 경우 자체의 철심이나 권선의 손실로 인하여 출력 효율의 한계가 있으며, 고압을 위해 감긴 코일은 부피를 크게 하며 무겁게 만든다 이를 해결하기 위해 변압기 자체 손실을 줄이고 소형화가 가능하며 높은 승압비을 가진 PAN-PZT계의 적층형 압전 변압기를 제작하였다. 또한 회로의 손실을 줄이기 위한 영전압 스위칭(ZVS; Zero Voltage Switching)과 그리고 LCD패널과 인버터의 불필요한 간섭현상(EMI; Electro-Magnetic Interference)을 줄일 수 있으며 소형화가 가능한 하프 브리지형 압전 인버터를 설계하였다.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.28 no.7
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• pp.780-788
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• 2004

This paper reports the fluid flow and heat transfer around a module cooled by forced air flow generated by a piezoelectric(PZT) cooling fan. The fluids are locally accelerated by a flexible PZT fan which deflects inside a fluid transport system of comparatively simple structure mounted on a PCB in a parallel-plate channel(450${\times}$80${\times}$700㎣). Input voltages of 20-100V and a resonance frequency of 23㎐ were used to vibrate the cooling fan. Input power to the module was 4W. The fluid flow around the module was visualized by using PIV system. The temperature distributions around a heated module were visualized by using liquid crystal film(LCF). The cooling effect using a PZT fan was independent of the vent area ratios at the channel inlet and was similar to the forced convection cooling. We found that the flow type was Y-shape and the cooling effect was increased by the wake generated by a piezoelectric cooling fan.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.341-345
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• 2002

The effect of the Pt electrode and the $Pt-IrO_2$ hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a $Pt-IrO_2$ hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized $Pt-IrO_2$ hybrid electrode significantly enhanced the fatigue properties with minimal leakage current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.117-120
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• 2004

The dielectric and piezoelectric properties of silver doped $Pb(Zr,Ti)O_3-Pb(Mn,W,Sb,Nb)O_3$ ceramics was examined. By varying the contents of silver(0.0, 0.4, 1.0 mol%), the effect of doped silver on PZT-PMWSN thin film was investigated at various sintering temperature(900, 1000, $1100^{\circ}C$). As increasing silver contents, the relative dielectric constant is increased and sinterbility is enhanced. At the specimen with 0.4 mol% Ag and sintered at $1100^{\circ}C$, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\varepsilon}r$) and dielectric loss were 0.502, 811, 991, 0.006, respectively. The results show that the PZT-PMWSN/Ag composites have enhanced piezoelectic and dielectric properties and processing condition is improved.

• Journal of the Korean Society for Nondestructive Testing
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• v.12 no.4
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• pp.9-17
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• 1993

Three types of piezoelectric sensors to detect acoustic emission signals were developed and characterized. Epicentral displacement and velocity of a plate to have infinite boundary were calculated by convolution between a Green's function and a simulated source time function to show parabolic rising characteristic. The sensor calibration system set up was composed of a steel plate, a glass capillary, an indentor and a load cell indicator The transient elastic signals were detected by the sensors. The results were compared with the theoretical results and Fast Fourier Transformed. As the results, the sensor fabricated using a disk shape of a piezoelectric PZT element showed resonant characteristics. The sensors fabricated using a conical shape PZT element and a PVDF polymer film showed the wide band characteristics for particle displacement and velocity, respectively. The calculated results showed good agreements with the transient responses in the cases of the wide band sensors and it was confirmed that the simulated source time function had been properly assumed.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.31-37
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• 2003

This paper presents a measurement system of mechanical property using dual servo system. There are many kinds of method to measure material properties such as tensile test, indention and bending test. It is highly required to measure the properties of nano-sized material and structure. However, It is need more accurate measurement system, more stable and frequency response than conventional test. In this paper, we designed the dual servo system for a measuring instrument The dual servo system consisting of a coarse stage and a fine motion stage with VCM and PZT is proposed. Mechanical mechanism is designed with the leaf spring type of flexure hinge joint. Lead compensator is applied to this control system, and is designed by PQ method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.105-108
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• 2005

The Pb(Zr,Ti)O$_3$ thin films were fabricated with Pb(La,Ti)O$_3$ buffers in-situ onto Pt/Ti/SiO$_2$/Si substrates by pulsed laser deposition method. We have observed the increase of the remanent polarization using PLT buffers. The remanent polarization value of 33.4 $\mu$C/$\textrm{cm}^2$ and the coercive field value of 66.4 kV/cm were obtained when the PLT tufter was deposited for 15 seconds. Enhancement of the polarization is resulted from the enhanced orientation of PZT thin film because of the PLT buffet layer.

• Transactions of the Society of Information Storage Systems
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• v.1 no.1
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• pp.73-77
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• 2005

In this paper, a new silicon nitride cantilever integrated with silicon heater and piezoelectric sensor has been firstly developed to improve the uniformity of the initial bending and the mechanical stability of the cantilever array for thermo-piezoelectric SPM(scanning probe microscopy) -based data storages. This nitride cantilever shows thickness uniformity less than $2\%$. Data bits of 40 nm in diameter were recorded on PMMA film. The sensitivity of the piezoelectric sensor was 0.615 fC/nm after poling the PZT layer. For high speed operation, 128${\times}$128 probe array was developed.

• Journal of the Korean Ceramic Society
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• v.34 no.10
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• pp.1060-1066
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• 1997

In this paper, the effects of La addition of PLZT thin film prepared by sol-gel method on the capacitor characteristics are investigated for gigabit generation DRAM applications. The addition of La on the PLZT capacitor results in a trade-off between charge storage density(Qc') and leakage current density(Jl). As La content increases, Qc' and permeability(εr) at 0V are reduced while Jl is significantly decreased. It is demonstrated that 5% La doping of PZT can substantially reduce Jl and also improve resistance to fatigue while incurring only minimal degradation of Qc'. Very low leakage current density (5×10-7 A/㎠ even at 125℃) and high charge storage density (100fC/㎛2) under VDD/2=1V conditions are achieved using 5% La doped PZT thin films for gigabit DRAM capacitor dielectrics. In addition, the fatigue and TDDB measurements indicate good reliability of the PLZT capacitors.