• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.52-57
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• 2010

$BiFeO_3/Pb(Zr_{0.52}Ti_{0.48})O_3$(BFO/PZT) multilayer thin films have been prepared on a Pt/Ti/$SiO_2$/Si(100) substrate by chemical solution deposition. BFO single layer, BFO/PZT bilayer and multilayer thin films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was multi-orientated perovskite phase without amorphous and impurity phase. The leakage current density at 500 kV/cm was reduced by approximately four and five orders of magnitude by bilayer and multilayer structure films, compared with BFO single layer film. The low leakage current density leads to saturated P-E hysteresis loops of bilayer and multilayer films. In BFO/PZT multlayer film, saturated remanent polarization of $44.3{\mu}C/cm^2$ was obtained at room temperature at 1 kHz with the coercive field($2E_c$) of 681.4 kV/cm.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1621-1623
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• 2004

The $Pb(Zr_{0.52}Ti_{0.48})O_3/(Ba_{0.6}Sr_{0.4})TiO_3$ [PZT(52/48)/BST(60/40)] heterolayered thin films were deposited on Pt/Ti/$SiO_2$/Si substrates by using the RF sputtering method with RF powers of 60,70,80,90[W]. All thin films showed the peaks of the tetragonal phase. Increasing the RF power, dielectric constant and loss of the PZT(52/48)/BST(60/40)] heterolayered thin films were decreased. The thickness ratio of PZT and BST thin films was 1/1. The relative dielectric constant and the dielectric loss of the PZT(52/48)/ BST(60/40) heterolayered thin films were 562 and 13%, respectively.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1988-1990
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• 2002

마이크로 바이오칩용 미세 무게 감지 소자를 개발하기 위해 통상적인 MEMS 공정에 PZT sol solution을 함침하여 binder로서 적용하는 복합적인 스크린 인쇄 방법을 적용해 $800-850^{\circ}C}$의 비교적 저온에서 높은 소결밀도와 우수한 전기적인 특성을 가지는 PZT-0.12PCW 후막 구동형 캔틸레버 소자를 Pt/$TiO_2$/YSZ/$SiO_2$/Si 기판에 제조하였다. 제조된 PZT-0.12PCW 후막 구동형 캔틸레버 소자의 공진 주파수와 변위를 레이저 미소 변위 측정 시스템을 이용하여 공기 중 및 액체 중에서 측정함으로써 캔틸레버 크기에 따른 공진 특성 변화, 액체 내에서의 댐핑 효과 등을 분석할 수 있었다. 또한 Au를 증착하거나biotin-streptoavidin 반응을 통해 단백질을 고정화시켜 무게변화를 야기시킨 후 소자의 감도를 평가함으로써 PZT-0.12PCW 후막 구동형 캔틸레버를 우수한 성능의 바이오칩용 미세 무게 감지 소자로 응용할 수 있음을 알 수 있었다.

• Journal of the Korean Ceramic Society
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• v.28 no.12
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• pp.943-952
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• 1991

Lead zirconate titanate(PZT) powders and thin films were prepared from an alkoxide-based solution by sol-gel method. Gelation of synthesized complex solutions, pyrolysis and crystallization behaviors of the dried powder were studied in accordance with a water content and a catalyst. PZT thin films were formed by spin-casting method on silicon and platinum substrates, and characterized. Ester produced from the reactions was completely removed when drying of the gel was finished. Pyrolysis property of the dried PZT gels were changed in order water content, class of catalyst, and quantity of catalyst. Crystalline Pb phase was transiently formed near 250$^{\circ}C$. Basic catalyst is good additive for a formation of perovskite phase in the films, and acidic catalyst for a densified film structure. By the analysis of RBS, Pb element in the PZT films were diffused into silicon substrate, and the pores, may be produced due to local densification around some grains in the films, make an origin of fault in microstructure when holding time goes to be longer at 700$^{\circ}C$.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.369-375
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• 1994

In this study, ferroelectric thin films of PZT with different Zr/Ti ratio were prepared by sol-get processing and annealed by rapid thermal annealing at >$500^{\circ}C$>$-700^{\circ}C$ for 10 sec. -1 min. Structures of the annealed films were examined by X-ray diffraction and SEM. Thin films of PZT with perovskite structure have been obtained by annealing at >$600^{\circ}C$ or above and for 20 seconds or longer. Maximum remnant polarization of 10.24.mu.C/cm$^{2}$ and minimum coercive field of 20.06 kV/cm were obtained from the 56/44 and 65/35 Zr/Ti composition films, respectively. Dielectric constant, .epsilon.$_{r}$ of 500-1300 and dielectric loss, tan .delta., of 0.01-0.035 were obtained from the films.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.916-919
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• 2004

This paper studied about the (100) orientation of PZT thin films coated on the LNO electrode using a different thermal annealing. The thermal annealing method is divided into two things. The one is the method transferring heat to only the lower substrate and another is transferring heat to all directions. Orientation factor of PZT in the method of transferring heat to only the lower substrate was F=99% in the thermal annealing of the LNO. Orientation factor of PZT was F=67% in the method of transferring heat to all directions.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.631-637
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• 2003

We have evaluated structural and electric, ferroelectric properties of PZT(30/70) thick film prepared by using 1,3-propanediol based sol-gel method on Pt/Ti/SiO$_2$/Si substrates. Rapid thermal annealing (RTA) is used to reduce the thermal stress and final furnace annealing is processed at $650^{\circ}C$. As the results of SEM analysis, we find that we get 350 nm in thickness for one coating and 1 $\mu$m for three times of coating. In the results of C-D analysis at 1 kHz, dielectric constant ($\varepsilon$$_{r}$) and dissipation factor were 886 and 0.03, respectively. C-V curve is shaped as a symmetrical butterfly. Leakage current density at 200 kV/cm is 1.23${\times}$10$^{-5}$ A/cm$^2$ and in the results of hysteresis loops measured at 150 kV/cm, the remnant polarization (P$_{r}$) and the coercive field (E$_{c}$) are 33.8 $\mu$C/cm$^2$ and 56.9 kV/cm, respectively. PZT(30/70) thick film exhibits relatively good ferroelectric, electric properties.s..

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.781-790
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• 2001

The effects of silicon substrate thickness on the performance of thin film PZT IR detectors are theoretically and experimentally investigated. Theoretical analyses show that the pyroelectric current responsivity of a detector without a silicon substrate is about two orders higher than that of a detector with a 450${\mu}{\textrm}{m}$ thick silicon substrate. At a fixed chopping frequency of 100Hz, the pyroelectric current responsivity decreases exponentially with increasing silicon substrate thickness up to 50${\mu}{\textrm}{m}$, and above 50${\mu}{\textrm}{m}$ the decreasing rate become slow. The thinner the silicon substrate is, the less the thermal loss by conduction is , and thus the higher responsivity is resulted. To verify the theoretical analyses, micromachined PZT thin film IR detectors with different silicon substrate thicknesses are fabricated and characterized. The theoretical and experimental results show the similar tendencies for all silicon substrates with varying thickness.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.3
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• pp.428-435
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• 2002

Pyroelectric $Pb(Zr_{0.3}Ti_{0.7})O_3$ (PZT30/70) thin film IR detectors has been fabricated and characterised. The PZT30/70 thin film was deposited onto $Pt/Ti/Si_3N_4/SiO_2/Si$ substrate by the sol-gel process. Four different substrate conditions were studied for their effects on the pyroelectric responses of the IR detectors. The substrate conditions were the combinations of the Si etching and the Pt/Ti patterning. In the Si etched substrate, the $Si_3N_4/SiO_2$ composite layer was used as silicon etch-stop, and was used as the membrane to support the PZT pyroelectric film element as well. The measured pyroelectric current and voltage responses of detectors fabricated on the micro-machined thin $Si_3N_4/SiO_2$ membrane were two orders higher than those of the detectors on the bulk-silicon. For detectors on the membrane substrate, the Pt/Ti patterned detectors showed a 2-times higher pyroelectric response than that of not-patterned detectors. On the other hand, the pyroelectric response of the detectors on the not-etched Si substrate was almost the same, regardless of the Pt/Ti patterning. It was also found that the rise time strongly depended on the substrate thickness: the thicker the substrate was, the longer the rise-time.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.193-196
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• 2011

Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.